PMD17K100 [ISC]
Silicon PNP Darlingtion Power Transistor; 硅PNP Darlingtion功率晶体管
| 型号： | PMD17K100 |
| 厂家： | 
INCHANGE SEMICONDUCTOR COMPANY LIMITED |
| 描述： | Silicon PNP Darlingtion Power Transistor |
| 文件： | 总2页 (文件大小：193K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
INCHANGE Semiconductor
isc Product Specification
isc Silicon PNP Darlingtion Power Transistor
PMD17K100
DESCRIPTION
·High DC current gain
·Collector-Emitter Sustaining Voltage-
V
CEO(SUS)= -100V(Min)
·Complement to type PMD16K100
APPLICATIONS
·Designed for general purpose amplifier and low frequency
switching applications
ABSOLUTE MAXIMUM RATINGS(TC=25℃)
SYMBOL
VCBO
VCEO
VEBO
IC
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
VALUE
-100
-100
-5.0
UNIT
V
V
V
Collector Curren-Continuous
Collector Current-Peak
Base Current
-20
A
ICP
-40
A
IB
-0.5
A
PC
Collector Power Dissipation@TC=25℃
Junction Temperature
200
W
℃
℃
150
Tj
Storage Temperature
-65~200
Tstg
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX
UNIT
ThermalResistance, Junction to Case
0.875 ℃/W
Rth j-c
isc Website：www.iscsemi.cn
INCHANGE Semiconductor
isc Product Specification
isc Silicon PNP Darlingtion Power Transistor
PMD17K100
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
Collector-Emitter Sustaining Voltage
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Base-Emitter On Voltage
Collector Cutoff current
CONDITIONS
MIN
MAX
UNIT
V
VCEO(SUS)
IC= -100Ma; IB= 0
-100
IC= -10A; IB= -40mA
IC= -10A; IB= -40mA
IC= -10A; VCE= -3V
-2.0
-2.8
-2.8
V
VCE
(sat)
(sat)
V
VBE
V
VBE
(on)
VCE= -100V; RBE= 1KΩ
VCE= -100V; RBE= 1KΩ, TC=150℃
-1.0
-5.0
ICER
mA
mA
IEBO
hFE
fT
Emitter Cut-off current
VEB= -5V; IC= 0
-2.0
DC Current Gain
IC= -10A; VCE= -3V
800
4
20000
Current-Gain—Bandwidth Product
Output Capacitance
IC-7A; VCE= -3V, f= 1kHz
IE= 0; VCB= -10V; ftest= 1.0MHz
MHz
pF
COB
400
2
isc Website：www.iscsemi.cn
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