S2818A [ISC]
Silicon NPN Power Transistor; 硅NPN功率晶体管
| 型号： | S2818A |
| 厂家： | 
INCHANGE SEMICONDUCTOR COMPANY LIMITED |
| 描述： | Silicon NPN Power Transistor |
| 文件： | 总2页 (文件大小：192K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Power Transistor
S2818A
DESCRIPTION
·High Voltage
·High Switching Speed
·Low Saturation Voltage
·Built-in Damper Diode
APPLICATIONS
·Color TV horizontal output applications
ABSOLUTE MAXIMUM RATINGS (Ta=25℃)
SYMBOL
VCES
VEBO
IC
PARAMETER
Collector-Emitter Voltage
Emitter-Base Voltage
VALUE
1500
5
UNIT
V
V
Collector Current-Continuous
Collector Current-peak
Base Current-peak
5
A
ICM
7.5
A
IBM
4
A
Collector Power Dissipation
@ TC≤95℃
PC
12.5
115
W
℃
℃
Junction Temperature
Tj
Storage Temperature Range
-65~115
Tstg
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX
UNIT
Thermal Resistance,Junction to Case
1.6
℃/W
Rth j-c
isc Website：www.iscsemi.cn
INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Power Transistor
S2818A
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
VCEO(SUS)
V(BR)EBO
PARAMETER
CONDITIONS
IC= 100mA; IB= 0; L= 25mH
IE= 200mA; IC= 0
MIN
700
5
TYP
MAX UNIT
Collector-Emitter Sustaining Voltage
Emitter-Base Breakdown Voltage
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Collector Cutoff Current
V
V
IC= 4.5A; IB= 2A
1.0
1.5
1.0
V
V
VCE
VBE
(sat)
IC= 4.5A; IB= 2A
(sat)
ICES
VCE= 1500V; VBE= 0
IC= 4.5A; VCE= 5V
IE= 0; VCB= 10V; f= 1MHz
IC= 0.1A; VCE= V
F= 5A
mA
hFE
COB
fT
DC Current Gain
2.25
Output Capacitance
125
7
pF
MHz
V
Current-Gain—Bandwidth Product
C-E Diode Forward Voltage
VECF
2.0
Switching Times
Storage Time
10
μs
μs
ts
tf
IC= 4.5A; IB( )= 1.8A
end
Fall Time
0.7
isc Website：www.iscsemi.cn
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