ST180S [ISC]

Phase Control Thyristors;
ST180S
型号: ST180S
厂家: INCHANGE SEMICONDUCTOR COMPANY LIMITED    INCHANGE SEMICONDUCTOR COMPANY LIMITED
描述:

Phase Control Thyristors

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中文:  中文翻译
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ST180S  
Phase Control Thyristors  
FEATURES  
·Center amplifying gate  
·Hermetic metal case with ceramic insulator  
(Also available with glass-metal seal up to 1200 V)  
·International standard case TO-209AB (TO-93)  
·Compression Bonded Encapsulation for heavy duty  
operations such as severe thermal cycling  
·Minimum Lot-to-Lot variations for robust device  
performance and reliable operation  
APPLICATIONS  
·DC motor controls  
·Controlled DC power supplies  
·AC controllers  
ABSOLUTE MAXIMUM RATINGS  
RATINGS  
SYMBOL  
PARAMETER  
UNIT  
ST180S04  
400  
ST180S08  
800  
ST180S12  
1200  
ST180S16  
1600  
Repetitive Peak Reverse Voltage  
VRRM  
VRSM  
V
V
Non-Repetitive Peak Reverse Voltage  
400  
800  
1200  
1600  
SYMBOL  
PARAMETER  
CONDITIONS  
VALUE  
UNIT  
TC=85℃,180° conduction, half sine  
wave  
Average Forward Current  
200  
360  
A
A
IT(AV)  
Maximum RMS on-state current  
DC at 76case temperature  
IT(RMS)  
t = 10ms  
t = 8.3ms  
t = 10ms  
t = 8.3ms  
5700  
5970  
4800  
5000  
No voltage  
reapplied  
Max. peak, one-cycle forward,  
non-repetitive surge current  
ITSM  
A
100% VRRM  
reapplied  
TJ  
Junction Temperature  
-40~125  
-40~150  
Storage Temperature Range  
Tstg  
1
isc websitewww.iscsemi.cn  
isc & iscsemi is registered trademark  
ST180S  
Phase Control Thyristors  
THERMAL CHARACTERISTICS  
SYMBOL  
PARAMETER  
MAX  
UNIT  
Thermal Resistance, Junction to Case  
0.105  
/W  
Rth j-c  
ELECTRICAL CHARACTERISTICS  
SYMBOL  
PARAMETER  
CONDITIONS  
TYPE  
MAX  
UNIT  
Ipk = 570 A, TJ = 125 , tp = 10 ms sine  
pulse  
VTM  
Forward Voltage Drop  
1.75  
30  
V
IDRM  
IRRM  
Max. peak reverse and off-state  
leakage current  
TJ = TJ maximum, rated VDRM/VRRM  
applied  
mA  
TJ = -40 ℃  
TJ = 25 ℃  
TJ = 125 ℃  
TJ = -40 ℃  
TJ = 25 ℃  
TJ = 125 ℃  
180  
90  
IGT  
DC gate current required to trigger  
150  
mA  
40  
2.9  
1.8  
1.2  
VGT  
DC gate voltage required to trigger  
Typical turn-off time  
3
V
ITM = 300A, TJ = TJ max, di/dt = 20A/µs,  
VR = 50V, dv/dt = 20V/µs, Gate 0V 100  
Ω, tp = 500μs  
tq  
100  
µs  
PACKAGE OUTLINE  
Dimensions in mm (1mm = 0.0394“)  
2
isc websitewww.iscsemi.cn  
isc & iscsemi is registered trademark  

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