STK730-010 [ISC]
Self-excitation Type Semi-Regulated; 自激式半调整
| 型号： | STK730-010 |
| 厂家： | 
INCHANGE SEMICONDUCTOR COMPANY LIMITED |
| 描述： | Self-excitation Type Semi-Regulated |
| 文件： | 总3页 (文件大小：118K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Thick Film Hybrid IC
INCHANGE
STK730-010
Self-excitation Type Semi-Regulated
Switching Regulator
Features
Package Dimensions
﹒Power MOSFET devices
unit:mm
﹒Ideal for semi-regulated control switching supplies
﹒Error detection circuit on-chip (40.5±0.5V
set reference voltage)
﹒Pin compatible with all other devices in the same
series of devices with 110 to 280W power ratings
﹒Higher oscillator frequency allows the use of
smaller pulse transformers
Applications
﹒CRT/CTV power supplies
﹒Office automation equipment power supplies
Block Diagram
Pin Functions
(1)
(2)
(3)
(4)
(5)
(6)
(7)
(8)
(9)
Vref(40.5V typ) input
Error detection level
Ground
Drive voltage input
TR1 gate
Amplifier circuit control
OCP setting level input
TR1 source
TR1 source
(11) TR1 drain
(12) TR1 drain
Thick Film Hybrid IC
INCHANGE
Specifications
Maximum Ratings at Ta=25℃, Tc=25℃ unless otherwise specified
Parameter
Operating substrate temperature
AC input voltage
Symbol
TC max
VAC
Conditions
Recommended value is 105℃
Specified test circuit
Ratings
115
UNIT
℃
140
Vrms
℃
Operating temperature
Storage temperature
Maximum output power
(TR1)
Topr
-10 to+85
-30 to+115
110
Tstg
℃
Wo max
Specified test circuit VO=135V
W
Drain current
6
20
A
A
ID
ID(Pulse)
IDR
Pulse drain current
Drain reverse current
Gate-source voltage
Allowable power dissipation
Chip junction temperature
Thermal resistance
(ZD1)
6
A
±30
78.1
150
1.6
V
VGSS
PD
W
Tj max
θj-c
℃
℃/W
Allowable power dissipation
Chip junction temperature
Thermal resistance
500
125
0.2
mW
℃
PZD1
Tj(ZD1)max
θj-c(ZD1)
℃/mW
Allowable operating ranges at Ta=25℃
Parameter
Pin 4 input voltage
Oscillator frequency
Symbol
V4
Conditions
Ratings
±8 to±24
20 to 120
UNIT
V
fOSC
kHz
Operating characteristics at Ta=25℃Tc=25℃
( unless otherwise specified,specified test circuits)
Parameter
Output voltage setting
Symbol
Conditions
IIN=8mA
min
Typ
max
UNIT
V
40.0
40.5
7
41.0
Output voltage temperature coefficient
(TR1)
mV/℃
TC=0 to 105℃, IIN=8mA
Drain-source breakdown voltage
Gate-source cutoff voltage
ON resistance
500
2.0
V
V
V(BR)DSS
VGS(off)
RDS(on)
Ciss
ID=10mA,VGS=0V
3.0
1.8
ID=1mA,VDS=10V
1.4
Ω
pF
ID=2.5A,VGS=10V
Input capacitance
(ZD1)
800
VDS=10V,VGS=0V,f=1MHz
Zener voltage
23.7
26.3
V
VZ
IZ=5mA
Thick Film Hybrid IC
INCHANGE
Series organization
These devices form a series with varying output power ratings
Maximum ratings
Operating characteristics
Device
Tstg
[℃]
TC max Tj max
[℃] [℃]
ON resistance
ID
[A]
Input voltage Output power
VDSS
[V]
[V]
[W]
[Ω]
STK730-010
STK730-020
STK730-030
STK730-040
STK730-050
STK730-060
STK730-070
STK730-080
STJ730-090
6.0
8.0
110
1.4
0.8
0.7
0.55
0.3
5.0
3.0
2.0
1.2
145
180
210
280
110
180
210
280
500
85 to 132
10.0
12.0
15.0
3.0
-30 to
+115
+115
+150
5.0
900
170 to 264
6.0
8.0
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