TIP106 [ISC]

isc Silicon PNP Darlington Power Transistor; ISC的硅PNP达林顿功率晶体管
TIP106
型号: TIP106
厂家: INCHANGE SEMICONDUCTOR COMPANY LIMITED    INCHANGE SEMICONDUCTOR COMPANY LIMITED
描述:

isc Silicon PNP Darlington Power Transistor
ISC的硅PNP达林顿功率晶体管

晶体 晶体管 局域网
文件: 总2页 (文件大小:108K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
INCHANGE Semiconductor  
isc Product Specification  
isc Silicon PNP Darlington Power Transistor  
TIP106  
DESCRIPTION  
·High DC Current Gain-  
: hFE = 1000(Min)@ IC= -3A  
·Collector-Emitter Sustaining Voltage-  
: VCEO(SUS) = -80V(Min)  
·Low Collector-Emitter Saturation Voltage-  
: VCE(sat) = -2.0V(Max)@ IC= -3A  
= -2.5V(Max)@ IC= -8A  
·Complement to Type TIP101  
APPLICATIONS  
·Designed for general-purpose amplifier and low-speed  
switching applications  
ABSOLUTE MAXIMUM RATINGS(Ta=25)  
SYMBOL  
VCBO  
VCEO  
VEBO  
IC  
PARAMETER  
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
VALUE  
-80  
UNIT  
V
-80  
V
-5  
V
Collector Current-Continuous  
Collector Current-Peak  
Base Current- Continuous  
-8  
A
ICM  
-15  
A
IB  
-1  
A
Collector Power Dissipation  
@TC=25  
Collector Power Dissipation  
@Ta=25℃  
80  
PC  
W
2
Junction Temperature  
150  
-65~150  
Tj  
Storage Temperature Range  
Tstg  
THERMAL CHARACTERISTICS  
SYMBOL  
PARAMETER  
MAX  
1.56  
62.5  
UNIT  
/W  
/W  
Thermal Resistance,Junction to Case  
Thermal Resistance,Junction to Ambient  
Rth j-c  
Rth j-a  
isc Websitewww.iscsemi.cn  
INCHANGE Semiconductor  
isc Product Specification  
isc Silicon PNP Darlington Power Transistor  
TIP106  
ELECTRICAL CHARACTERISTICS  
TC=25unless otherwise specified  
SYMBOL  
VCEO(SUS)  
VCE(sat)-1  
VCE(sat)-2  
VBE(on)  
ICBO  
PARAMETER  
Collector-Emitter Sustaining Voltage  
Collector-Emitter Saturation Voltage  
Collector-Emitter Saturation Voltage  
Base-Emitter On Voltage  
Collector Cutoff Current  
Collector Cutoff Current  
Emitter Cutoff Current  
CONDITIONS  
MIN  
MAX  
UNIT  
V
IC= -30mA, IB= 0  
-80  
IC= -3A ,IB= -6mA  
IC= -8A ,IB= -80mA  
IC= -8A ; VCE= -4V  
VCB= -80V, IE=0  
-2.0  
-2.5  
-2.8  
-50  
V
V
V
μA  
μA  
mA  
ICEO  
VCE= -40V, IB=0  
-50  
IEBO  
VEB= -5V; IC=0  
-2  
hFE-1  
DC Current Gain  
IC= -3A; VCE= -4V  
IC= -8A; VCE= -4V  
IE= 0; VCB= -10V, f= 0.1MHz  
1000  
200  
20000  
hFE-2  
DC Current Gain  
COB  
Output Capacitance  
300  
pF  
isc Websitewww.iscsemi.cn  

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