TIP106 [ISC]
isc Silicon PNP Darlington Power Transistor; ISC的硅PNP达林顿功率晶体管![TIP106](http://pdffile.icpdf.com/pdf1/p00161/img/icpdf/TIP10_893528_icpdf.jpg)
型号: | TIP106 |
厂家: | ![]() |
描述: | isc Silicon PNP Darlington Power Transistor |
文件: | 总2页 (文件大小:108K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
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INCHANGE Semiconductor
isc Product Specification
isc Silicon PNP Darlington Power Transistor
TIP106
DESCRIPTION
·High DC Current Gain-
: hFE = 1000(Min)@ IC= -3A
·Collector-Emitter Sustaining Voltage-
: VCEO(SUS) = -80V(Min)
·Low Collector-Emitter Saturation Voltage-
: VCE(sat) = -2.0V(Max)@ IC= -3A
= -2.5V(Max)@ IC= -8A
·Complement to Type TIP101
APPLICATIONS
·Designed for general-purpose amplifier and low-speed
switching applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
VCBO
VCEO
VEBO
IC
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
VALUE
-80
UNIT
V
-80
V
-5
V
Collector Current-Continuous
Collector Current-Peak
Base Current- Continuous
-8
A
ICM
-15
A
IB
-1
A
Collector Power Dissipation
@TC=25℃
Collector Power Dissipation
@Ta=25℃
80
PC
W
2
Junction Temperature
150
-65~150
℃
℃
Tj
Storage Temperature Range
Tstg
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX
1.56
62.5
UNIT
℃/W
℃/W
Thermal Resistance,Junction to Case
Thermal Resistance,Junction to Ambient
Rth j-c
Rth j-a
isc Website:www.iscsemi.cn
INCHANGE Semiconductor
isc Product Specification
isc Silicon PNP Darlington Power Transistor
TIP106
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
VCEO(SUS)
VCE(sat)-1
VCE(sat)-2
VBE(on)
ICBO
PARAMETER
Collector-Emitter Sustaining Voltage
Collector-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
Base-Emitter On Voltage
Collector Cutoff Current
Collector Cutoff Current
Emitter Cutoff Current
CONDITIONS
MIN
MAX
UNIT
V
IC= -30mA, IB= 0
-80
IC= -3A ,IB= -6mA
IC= -8A ,IB= -80mA
IC= -8A ; VCE= -4V
VCB= -80V, IE=0
-2.0
-2.5
-2.8
-50
V
V
V
μA
μA
mA
ICEO
VCE= -40V, IB=0
-50
IEBO
VEB= -5V; IC=0
-2
hFE-1
DC Current Gain
IC= -3A; VCE= -4V
IC= -8A; VCE= -4V
IE= 0; VCB= -10V, f= 0.1MHz
1000
200
20000
hFE-2
DC Current Gain
COB
Output Capacitance
300
pF
isc Website:www.iscsemi.cn
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