TIP120 [ISC]
Silicon NPN Darlington Power Transistors; 硅NPN达林顿功率晶体管型号: | TIP120 |
厂家: | INCHANGE SEMICONDUCTOR COMPANY LIMITED |
描述: | Silicon NPN Darlington Power Transistors |
文件: | 总4页 (文件大小:173K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
Inchange Semiconductor
Product Specification
Silicon NPN Darlington Power Transistors
TIP120/121/122
DESCRIPTION
·With TO-220C package
·DARLINGTON
·High DC current gain
·Low collector saturation voltage
·Complement to type TIP125/126/127
APPLICATIONS
·Designed for general–purpose amplifier
and low–speed switching applications.
PINNING
PIN
1
DESCRIPTION
Base
Collector;connected to
mounting base
2
3
Emitter
Absolute maximum ratings(Tc=25℃)
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
TIP120
TIP121
TIP122
TIP120
TIP121
TIP122
60
80
VCBO
Collector-base voltage
Open emitter
V
100
60
VCEO
Collector-emitter voltage
Open base
V
80
100
5
VEBO
IC
ICM
IB
Emitter-base voltage
Collector current-DC
Collector current-Pulse
Base current-DC
Open collector
V
A
5
8
A
120
65
mA
TC=25℃
Ta=25℃
PC
Collector power dissipation
W
2
Tj
Junction temperature
Storage temperature
150
-65~150
℃
℃
Tstg
Inchange Semiconductor
Product Specification
Silicon NPN Darlington Power Transistors
TIP120/121/122
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
60
TYP.
MAX
UNIT
TIP120
TIP121
TIP122
Collector-emitter
sustaining voltage
VCEO(SUS)
IC=0.1A, IB=0
V
80
100
VCEsat-1
VCEsat-2
VBE
Collector-emitter saturation voltage IC=3A ,IB=12mA
Collector-emitter saturation voltage IC=5A ,IB=20mA
2.0
4.0
2.5
V
V
V
Base-emitter on voltage
IC=3.0A ; VCE=3V
VCB=60V, IE=0
VCB=80V, IE=0
TIP120
TIP121
TIP122
TIP120
TIP121
TIP122
Collector
cut-off current
ICBO
0.2
mA
VCB=100V, IE=0
VCE=30V, IB=0
VCE=40V, IB=0
Collector
cut-off current
ICEO
0.5
2
mA
mA
VCE=50V, IB=0
IEBO
hFE-1
hFE-2
Cob
Emitter cut-off current
DC current gain
VEB=5V; IC=0
IC=0.5A ; VCE=3V
IC=3.0A ; VCE=3V
IE=0 ; VCB=10V,f=0.1MHz
1000
1000
DC current gain
Output capacitance
200
pF
2
Inchange Semiconductor
Product Specification
Silicon NPN Darlington Power Transistors
TIP120/121/122
PACKAGE OUTLINE
Fig.2 Outline dimensions
3
Inchange Semiconductor
Product Specification
Silicon NPN Darlington Power Transistors
TIP120/121/122
4
相关型号:
TIP120-6261
Power Bipolar Transistor, 8A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin
RENESAS
TIP120-6265
Power Bipolar Transistor, 8A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin
RENESAS
TIP120-DR6269
Power Bipolar Transistor, 8A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin
RENESAS
TIP120-DR6280
Power Bipolar Transistor, 8A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin
RENESAS
TIP120A
Power Bipolar Transistor, 5A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin
MOTOROLA
©2020 ICPDF网 联系我们和版权申明