TIP120 [ISC]

Silicon NPN Darlington Power Transistors; 硅NPN达林顿功率晶体管
TIP120
型号: TIP120
厂家: INCHANGE SEMICONDUCTOR COMPANY LIMITED    INCHANGE SEMICONDUCTOR COMPANY LIMITED
描述:

Silicon NPN Darlington Power Transistors
硅NPN达林顿功率晶体管

晶体 晶体管
文件: 总4页 (文件大小:173K)
中文:  中文翻译
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Inchange Semiconductor  
Product Specification  
Silicon NPN Darlington Power Transistors  
TIP120/121/122  
DESCRIPTION  
·With TO-220C package  
·DARLINGTON  
·High DC current gain  
·Low collector saturation voltage  
·Complement to type TIP125/126/127  
APPLICATIONS  
·Designed for general–purpose amplifier  
and low–speed switching applications.  
PINNING  
PIN  
1
DESCRIPTION  
Base  
Collector;connected to  
mounting base  
2
3
Emitter  
Absolute maximum ratings(Tc=25)  
SYMBOL  
PARAMETER  
CONDITIONS  
VALUE  
UNIT  
TIP120  
TIP121  
TIP122  
TIP120  
TIP121  
TIP122  
60  
80  
VCBO  
Collector-base voltage  
Open emitter  
V
100  
60  
VCEO  
Collector-emitter voltage  
Open base  
V
80  
100  
5
VEBO  
IC  
ICM  
IB  
Emitter-base voltage  
Collector current-DC  
Collector current-Pulse  
Base current-DC  
Open collector  
V
A
5
8
A
120  
65  
mA  
TC=25  
Ta=25℃  
PC  
Collector power dissipation  
W
2
Tj  
Junction temperature  
Storage temperature  
150  
-65~150  
Tstg  
Inchange Semiconductor  
Product Specification  
Silicon NPN Darlington Power Transistors  
TIP120/121/122  
CHARACTERISTICS  
Tj=25unless otherwise specified  
SYMBOL  
PARAMETER  
CONDITIONS  
MIN  
60  
TYP.  
MAX  
UNIT  
TIP120  
TIP121  
TIP122  
Collector-emitter  
sustaining voltage  
VCEO(SUS)  
IC=0.1A, IB=0  
V
80  
100  
VCEsat-1  
VCEsat-2  
VBE  
Collector-emitter saturation voltage IC=3A ,IB=12mA  
Collector-emitter saturation voltage IC=5A ,IB=20mA  
2.0  
4.0  
2.5  
V
V
V
Base-emitter on voltage  
IC=3.0A ; VCE=3V  
VCB=60V, IE=0  
VCB=80V, IE=0  
TIP120  
TIP121  
TIP122  
TIP120  
TIP121  
TIP122  
Collector  
cut-off current  
ICBO  
0.2  
mA  
VCB=100V, IE=0  
VCE=30V, IB=0  
VCE=40V, IB=0  
Collector  
cut-off current  
ICEO  
0.5  
2
mA  
mA  
VCE=50V, IB=0  
IEBO  
hFE-1  
hFE-2  
Cob  
Emitter cut-off current  
DC current gain  
VEB=5V; IC=0  
IC=0.5A ; VCE=3V  
IC=3.0A ; VCE=3V  
IE=0 ; VCB=10V,f=0.1MHz  
1000  
1000  
DC current gain  
Output capacitance  
200  
pF  
2
Inchange Semiconductor  
Product Specification  
Silicon NPN Darlington Power Transistors  
TIP120/121/122  
PACKAGE OUTLINE  
Fig.2 Outline dimensions  
3
Inchange Semiconductor  
Product Specification  
Silicon NPN Darlington Power Transistors  
TIP120/121/122  
4

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