TIP130 [ISC]
isc Silicon NPN Darlington Power Transistor; ISC的硅NPN达林顿功率晶体管
| 型号： | TIP130 |
| 厂家： | 
INCHANGE SEMICONDUCTOR COMPANY LIMITED |
| 描述： | isc Silicon NPN Darlington Power Transistor |
| 文件： | 总2页 (文件大小：106K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Darlington Power Transistor
TIP130
DESCRIPTION
·High DC Current Gain-
: hFE = 1000(Min)@ IC= 4A
·Collector-Emitter Sustaining Voltage-
: VCEO(SUS) = 60V(Min)
·Low Collector-Emitter Saturation Voltage-
: VCE(sat) = 2.0V(Max)@ IC= 4A
·Complement to Type TIP135
APPLICATIONS
·Designed for general-purpose amplifier and low-speed
switching applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
VCBO
VCEO
VEBO
IC
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
VALUE
UNIT
V
60
60
V
5
8
V
Collector Current-Continuous
Collector Current-Peak
Base Current- Continuous
A
ICM
12
A
IB
0.3
70
A
Collector Power Dissipation
@TC=25℃
PC
W
Collector Power Dissipation
@Ta=25℃
2
Junction Temperature
150
-65~150
℃
℃
Tj
Storage Temperature Range
Tstg
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX
1.785
63.5
UNIT
℃/W
℃/W
Thermal Resistance,Junction to Case
Thermal Resistance,Junction to Ambient
Rth j-c
Rth j-a
isc Website：www.iscsemi.cn
INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Darlington Power Transistor
TIP130
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
VCEO(SUS)
VCE(sat)-1
VCE(sat)-2
VBE(on)
ICBO
PARAMETER
Collector-Emitter Sustaining Voltage
Collector-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
Base-Emitter On Voltage
Collector Cutoff Current
CONDITIONS
MIN
MAX
UNIT
V
IC= 30mA, IB= 0
60
IC= 4A; IB= 16mA
IC= 6A, IB= 30mA
IC= 4A; VCE= 4V
VCB= 60V, IE= 0
VCE= 30V, IB= 0
VEB= 5V; IC= 0
2.0
3.0
2.5
0.2
0.5
5
V
V
V
mA
mA
mA
ICEO
Collector Cutoff Current
IEBO
Emitter Cutoff Current
hFE-1
DC Current Gain
IC= 1A; VCE= 4V
IC= 4A; VCE= 4V
500
hFE-2
DC Current Gain
1000
15000
isc Website：www.iscsemi.cn
相关型号：
TIP130LEADFREE
Power Bipolar Transistor, 8A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, TO-220, 3 PIN
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