TIP29 [ISC]
isc Silicon NPN Power Transistors; ISC的硅NPN功率晶体管
| 型号： | TIP29 |
| 厂家： | 
INCHANGE SEMICONDUCTOR COMPANY LIMITED |
| 描述： | isc Silicon NPN Power Transistors |
| 文件： | 总2页 (文件大小：82K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Power Transistors
TIP29
DESCRIPTION
·Collector-Emitter Sustaining Voltage-
: VCEO(SUS) = 40V(Min)
·Collector-Emitter Saturation Voltage-
: VCE(sat) = 0.7V(Max.)@IC= 1.0A
·Complement to Type TIP30
APPLICATIONS
·Designed for use in general purpose amplifier and switching
applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
VCBO
VCEO
VEBO
IC
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current-Continuous
Collector Current-Pulse
Base Current
VALUE
UNIT
V
40
40
V
5
1
V
A
ICM
3
A
IB
0.4
A
Collector Power Dissipation
TC=25℃
PC
30
W
℃
℃
Tj
Junction Temperature
150
-65~150
Storage Ttemperature Range
Tstg
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX
4.17
62.5
UNIT
℃/W
℃/W
Thermal Resistance,Junction to Case
Thermal Resistance,Junction to Ambient
Rth j-c
Rth j-a
isc Website：www.iscsemi.cn
INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Power Transistors
TIP29
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
Collector-Emitter Sustaining Voltage
Collector-Emitter Saturation Voltage
Base-Emitter On Voltage
Collector Cutoff Current
Collector Cutoff Current
Emitter Cutoff Current
CONDITIONS
MIN
MAX
UNIT
V
VCEO(SUS)
IC= 30mA; IB= 0
40
IC= 1A; IB= 0.125A
IC= 1A; VCE= 4V
0.7
1.3
0.2
0.3
1.0
V
VCE
(sat)
(on)
V
VBE
ICES
VCE= 40V; VEB= 0
VCE= 30V; IB= 0
mA
mA
mA
ICEO
IEBO
hFE-1
hFE-2
fT
VEB= 5V; IC= 0
DC Current Gain
IC= 0.2A; VCE= 4V
IC= 1A; VCE= 4V
40
15
3
DC Current Gain
75
Current-Gain—Bandwidth Product
IC= 0.2A ; VCE= 10V; f= 1MHz
MHz
isc Website：www.iscsemi.cn
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