TIP31D [ISC]

Silicon NPN Power Transistors; 硅NPN功率晶体管


型号：	TIP31D
厂家：	INCHANGE SEMICONDUCTOR COMPANY LIMITED
描述：	Silicon NPN Power Transistors 硅NPN功率晶体管晶体晶体管开关局域网
文件：	总2页 (文件大小：225K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

INCHANGE Semiconductor

isc Product Specification

isc Silicon NPN Power Transistors

TIP31D

DESCRIPTION

·DC Current Gain -h_FE= 25(Min)@ I_C= 1A

·Collector-Emitter Breakdown Voltage-

: V_{(BR) CEO}= 120V(Min)

·Complement to Type TIP32D

APPLICATIONS

·Designed for use in general purpose amplifier and switching

applications.

ABSOLUTE MAXIMUM RATINGS(T_a=25℃)

SYMBOL

V_CBO

V_CEO

V_EBO

I_C

PARAMETER

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current-Continuous

Collector Current-Pulse

Base Current

VALUE

UNIT

160

120

I_CM

I_B

Collector Power Dissipation

T_C=25℃

P_C

℃

T_j

Junction Temperature

150

Storage Ttemperature Range

-65~150

T_stg

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

MAX

UNIT

Thermal Resistance,Junction to Case

3.125 ℃/W

R_{th j-c}

isc Website：www.iscsemi.cn

INCHANGE Semiconductor

isc Product Specification

isc Silicon NPN Power Transistors

TIP31D

ELECTRICAL CHARACTERISTICS

T_C=25℃ unless otherwise specified

SYMBOL

PARAMETER

Collector-Emitter Breakdown Voltage

Collector-Emitter Saturation Voltage

Base-Emitter On Voltage

Collector Cutoff Current

CONDITIONS

MIN

MAX

UNIT

V_(BR)CEO

I_C= 30mA; I_B= 0

120

I_C= 3A; I_B= 0.75A

I_C= 3A; V_CE= 4V

V_CE= 160V; V_EB= 0

V_CE= 90V; I_B= 0

V_EB= 5V; I_C= 0

2.5

1.8

0.2

0.3

1.0

V_CE

(sat)

(on)

V_BE

I_CES

I_CEO

I_EBO

h_FE-1

h_FE-2

f_T

Collector Cutoff Current

Emitter Cutoff Current

DC Current Gain

I_C= 1A ; V_CE= 4V

I_C= 3A ; V_CE= 4V

I_C= 0.5A ; V_CE= 10V

DC Current Gain

Current-Gain—Bandwidth Product

MHz

isc Website：www.iscsemi.cn

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