TIP32D [ISC]
Silicon PNP Power Transistors; 硅PNP功率晶体管
| 型号： | TIP32D |
| 厂家： | 
INCHANGE SEMICONDUCTOR COMPANY LIMITED |
| 描述： | Silicon PNP Power Transistors |
| 文件： | 总2页 (文件大小：226K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
INCHANGE Semiconductor
isc Product Specification
isc Silicon PNP Power Transistors
TIP32F
DESCRIPTION
·DC Current Gain -hFE = 25(Min)@ IC= -1A
·Collector-Emitter Breakdown Voltage-
: V(BR) CEO= -160V(Min)
·Complement to Type TIP31F
APPLICATIONS
·Designed for use in general purpose amplifier and switching
applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
VCBO
VCEO
VEBO
IC
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current-Continuous
Collector Current-Pulse
Base Current
VALUE
-200
-160
-5
UNIT
V
V
V
-3
A
ICM
-5
A
IB
-1
A
Collector Power Dissipation
TC=25℃
PC
40
W
℃
℃
Tj
Junction Temperature
150
-65~150
Storage Ttemperature Range
Tstg
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX
UNIT
Thermal Resistance,Junction to Case
3.125 ℃/W
Rth j-c
isc Website：www.iscsemi.cn
INCHANGE Semiconductor
isc Product Specification
isc Silicon PNP Power Transistors
TIP32F
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
Collector-Emitter Breakdown Voltage
Collector-Emitter Saturation Voltage
Base-Emitter On Voltage
Collector Cutoff Current
CONDITIONS
MIN
MAX
UNIT
V
V(BR)CEO
IC= -30mA; IB= 0
-160
IC= -3A; IB= -0.75A
IC= -3A; VCE= -4V
VCE= -200V; VEB= 0
VCE= -90V; IB= 0
VEB= -5V; IC= 0
-2.5
-1.8
-0.2
-0.3
-1.0
V
VCE
(sat)
(on)
V
VBE
ICES
mA
mA
mA
ICEO
IEBO
hFE-1
hFE-2
fT
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
IC= -1A; VCE= -4V
IC= -3A; VCE= -4V
IC= -0.5A; VCE= -10V
25
5
DC Current Gain
Current-Gain—Bandwidth Product
3
MHz
isc Website：www.iscsemi.cn
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