TIP48 [ISC]
isc Silicon NPN Power Transistors; ISC的硅NPN功率晶体管
| 型号： | TIP48 |
| 厂家： | 
INCHANGE SEMICONDUCTOR COMPANY LIMITED |
| 描述： | isc Silicon NPN Power Transistors |
| 文件： | 总2页 (文件大小：104K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Power Transistors
TIP48
DESCRIPTION
·DC Current Gain -hFE = 30~150@ IC= 0.3A
·Collector-Emitter Sustaining Voltage-
: VCEO(SUS) = 300V(Min)
APPLICATIONS
·Designed for line operated audio output amplifier,switchmode
power supply drivers and other switching applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
VCBO
VCEO
VEBO
IC
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current-Continuous
Collector Current-Peak
Base Current
VALUE
400
300
5
UNIT
V
V
V
1.0
A
ICM
2.0
A
IB
0.6
A
Collector Power Dissipation
TC=25℃
40
PD
W
Collector Power Dissipation
Ta=25℃
2
Tj
Junction Temperature
150
-65~150
℃
℃
Storage Temperature Range
Tstg
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX
3.125
62.5
UNIT
℃/W
℃/W
Thermal Resistance,Junction to Case
Thermal Resistance,Junction to Ambient
Rth j-c
Rth j-a
isc Website：www.iscsemi.cn
INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Power Transistors
TIP48
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
MAX
UNIT
V
VCEO(SUS) Collector-Emitter Sustaining Voltage
IC= 30mA; IB= 0
300
Collector-Emitter Saturation Voltage
Base-Emitter On Voltage
Collector Cutoff Current
Collector Cutoff Current
Emitter Cutoff Current
IC= 1A; IB= 0.2A
IC= 1A; VCE= 10V
VCE= 400V; VBE= 0
VCE= 200V; IB= 0
VEB= 5V; IC= 0
1.0
1.5
1.0
1.0
1.0
150
V
VCE
(sat)
(on)
V
VBE
ICES
mA
mA
mA
ICEO
IEBO
hFE-1
hFE-2
fT
DC Current Gain
IC= 0.3A; VCE= 10V
IC= 1A; VCE= 10V
IC= 0.1A; VCE= 10V
30
10
10
DC Current Gain
Current-Gain—Bandwidth Product
MHz
isc Website：www.iscsemi.cn
相关型号：
TIP48-6200
Power Bipolar Transistor, 1A I(C), 300V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin
RENESAS
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