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TIP54 [ISC]

Silicon NPN Power Transistors; 硅NPN功率晶体管
TIP54
型号： TIP54
厂家： INCHANGE SEMICONDUCTOR COMPANY LIMITED    INCHANGE SEMICONDUCTOR COMPANY LIMITED
描述：

Silicon NPN Power Transistors
硅NPN功率晶体管

晶体 晶体管 开关 局域网
文件： 总2页 (文件大小：217K)
中文：  中文翻译
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INCHANGE Semiconductor  
isc Product Specification  
isc Silicon NPN Power Transistors  
TIP54  
DESCRIPTION  
·DC Current Gain -hFE = 30~150@ IC= 0.3A  
·Collector-Emitter Sustaining Voltage-  
: VCEO(SUS) = 400V(Min)  
APPLICATIONS  
·Designed for line operated audio output amplifier,and switching  
power supply drivers applications.  
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)  
SYMBOL  
VCBO  
VCEO  
VEBO  
IC  
PARAMETER  
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
Collector Curent-Continuous  
Collector Current-Peak  
Base Current  
VALUE  
500  
UNIT  
V
400  
V
5
V
3.0  
A
ICM  
5.0  
A
IB  
0.6  
A
Collector Power Dissipation  
TC=25℃  
PD  
100  
W
℃
℃
Tj  
Junction Temperature  
150  
Storage Temperature Range  
-65~150  
Tstg  
THERMAL CHARACTERISTICS  
SYMBOL  
PARAMETER  
MAX  
UNIT  
Thermal Resistance,Junction to Case  
1.25  
℃/W  
Rth j-c  
isc Website：www.iscsemi.cn  
INCHANGE Semiconductor  
isc Product Specification  
isc Silicon NPN Power Transistors  
TIP54  
ELECTRICAL CHARACTERISTICS  
TC=25℃ unless otherwise specified  
SYMBOL  
PARAMETER  
CONDITIONS  
MIN  
MAX  
UNIT  
V
VCEO(SUS) Collector-Emitter Sustaining Voltage  
IC= 30mA; IB= 0  
400  
Collector-Emitter Saturation Voltage  
Base-Emitter On Voltage  
Collector Cutoff Current  
Collector Cutoff Current  
Emitter Cutoff Current  
IC= 3A; IB= 0.6A  
IC= 3A; VCE= 10V  
VCE= 500V; VBE= 0  
VCE= 300V; IB= 0  
VEB= 5V; IC= 0  
1.5  
1.5  
1.0  
1.0  
1.0  
150  
V
VCE  
(sat)  
(on)  
V
VBE  
ICES  
mA  
mA  
mA  
ICEO  
IEBO  
hFE-1  
hFE-2  
fT  
DC Current Gain  
IC= 0.3A; VCE= 10V  
IC= 3A; VCE= 10V  
IC= 0.2A; VCE= 10V  
30  
10  
DC Current Gain  
Current-Gain—Bandwidth Product  
2.5  
MHz  
isc Website：www.iscsemi.cn  

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