4N32 [ISOCOM]
OPTICALLY COUPLED ISOLATOR PHOTODARLINGTON OUTPUT; 光耦合隔离器PHOTODARLINGTON输出型号: | 4N32 |
厂家: | ISOCOM COMPONENTS |
描述: | OPTICALLY COUPLED ISOLATOR PHOTODARLINGTON OUTPUT |
文件: | 总3页 (文件大小:67K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
4N29, 4N30, 4N31, 4N32, 4N33
OPTICALLY COUPLED ISOLATOR
PHOTODARLINGTON OUTPUT
Dimensions in
mm
2.54
APPROVALS
6
5
4
1
2
l
ULrecognised,FileNo.E91231
6.9
6.1
3
8.9
max.
DESCRIPTION
8.3 max.
The4N29,4N30,4N31,4N32,4N33seriesof
optically coupled isolators consist of an infrared
light emitting diode and NPN silicon
photodarlington in a space efficient dual in line
plastic package.
5.3
max.
1.4
0.9
2.54
min.
15°
max.
FEATURES
0.25
0.48
l
Options :-
10mm lead spread - add G after part no.
Surface mount - add SM after part no.
Tape&reel - add SMT&R after part no.
High Current Transfer Ratio
High Isolation Voltage (5.3kV ,7.5kVPK
All electrical parameters 100R%MStested
Custom electrical selections available
ABSOLUTE MAXIMUM RATINGS
(25°C unless otherwise specified)
l
l
l
l
)
Storage Temperature
-55°C to + 150°C
-55°C to + 100°C
Operating Temperature
Lead Soldering Temperature
(1/16 inch (1.6mm) from case for 10 secs) 260°C
APPLICATIONS
l
l
l
l
Computer terminals
Industrial systems controllers
Measuring instruments
Signal transmission between systems of
different potentials and impedances
INPUT DIODE
Forward Current
Reverse Voltage
Power Dissipation
80mA
5V
100mW
OUTPUT TRANSISTOR
Collector-emitter Voltage BVCEO
Collector-base Voltage BVCBO
Emitter-collector Voltage BVECO
Power Dissipation
30V
50V
5V
150mW
OPTION G
8.3 max
OPTION SM
SURFACE MOUNT
POWER DISSIPATION
Total Power Dissipation
(derate linearly 3.3mW/°C above 25°C)
250mW
1.2
1.4
0.26
0.6
0.9
10.2
9.5
10.16
ISOCOMCOMPONENTSLTD
Unit25B, ParkViewRoadWest,
Park View Industrial Estate, Brenda Road
Hartlepool,TS251YDEnglandTel:(01429)863609
Fax:(01429)863581 e-mail sales@isocom.co.uk
http://www.isocom.com
5/2/03
DB90048-AAS/A4
ELECTRICAL CHARACTERISTICS ( TA = 25°C Unless otherwise noted )
PARAMETER
MIN TYP MAX UNITS
TEST CONDITION
Input
Forward Voltage (VF)
1.2
1.5
10
V
IF = 50mA
Reverse Current (IR)
µA
VR =6V
Output
Collector-emitter Breakdown (BVCEO
)
30
50
V
V
I = 1mA (note 2)
Collector-base Breakdown (BVCBO
Emitter-collector Breakdown (BVECO
Collector-emitter Dark Current (ICEO
)
ICC = 100µA
)
5
V
IE = 100µA
VCE = 10V
)
100 nA
Coupled Collector Output Current ( IC ) (Note 2)
4N32, 4N33
4N29, 4N30
4N31
50
10
5
mA
mA
mA
10mA IF , 10V VCE
10mA IF , 10V VCE
10mA IF , 10V VCE
Collector-emitter Saturation VoltageVCE(SAT)
4N29,4N30,4N32,4N33
4N31
1.0
1.2
V
V
8mA IF , 2mA IC
8mA IF , 2mA IC
Input to Output Isolation Voltage VISO
5300
7500
VRMS
VPK
Ω
(note 1)
(note 1)
VIO = 500V (note 1)
Input-output Isolation Resistance RISO 5x1010
Output Turn on Time
Output Turn off Time
ton
toff
5
µs
VCC = 10V, IC= 50mA,
IF = 200mA ,
Pulse Width = 1ms
fig.1
4N32, 4N33
4N29, 4N30, 4N31
100 µs
40 µs
Note 1
Note 2
Measured with input leads shorted together and output leads shorted together.
Special Selections are available on request. Please consult the factory.
FIGURE 1
VCC = 10V
Input
ton
IF = 200mA,
toff
IC = 50mA
Output
Pulse width = 1ms
tr
tf
Output
Input
10%
90%
10%
90%
DB90048-AAS/A4
5/2/03
Collector Power Dissipation vs. Ambient Temperature
Current Transfer Ratio vs.
Forward Current
200
10000
5000
1000
800
500
150
100
100
50
V
= 10V
TACE= 25°C
10
50
0
0
0.1 0.2 0.5
1
2
5
10 20 50 100
-30
0
25
50
75
100 125
Forward current IF (mA)
Ambient temperature TA ( °C )
Forward Current vs. Ambient Temperature
Collector Current vs. Collector-emitter Voltage
100
80
50mA
TA = 25°C
100
80
20
10mA
5mA
60
40
60
40
2mA
20
0
20
0
IF = 1mA
-30
0
25
50
75
100 125
0
1
2
3
4
5
Ambient temperature TA ( °C )
Collector-emitter voltage VCE ( V )
Collector-emitter Saturation
Voltage vs. Ambient Temperature
Relative Current Transfer Ratio
vs. Ambient Temperature
1.2
1.0
1.5
1.0
IF = 10mA
VCE = 10V
I = 8mA
IFC = 2mA
0.8
0.6
0.4
0.5
0
0.2
0
-30
0
25
50
75
100
-30
0
25
50
75
100
Ambient temperature TA ( °C )
Ambient temperature TA ( °C )
DB90048-AAS/A4
5/2/03
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