4N36XG [ISOCOM]
Transistor Output Optocoupler, 1-Element, 5300V Isolation, PLASTIC, DIP-6;
| 型号： | 4N36XG |
| 厂家： | 
ISOCOM COMPONENTS |
| 描述： | Transistor Output Optocoupler, 1-Element, 5300V Isolation, PLASTIC, DIP-6 输出元件 光电 |
| 文件： | 总3页 (文件大小：72K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
4N35X, 4N36X, 4N37X,
4N35, 4N36, 4N37,
OPTICALLY COUPLED
ISOLATOR
PHOTOTRANSISTOR OUTPUT
APPROVALS
Dimensions in mm
2.54
z
ULrecognised,FileNo.E91231
Package System " GG "
1
6
5
7.0
6.0
'X'SPECIFICATIONAPPROVALS
2
3
z
VDE0884in3availableleadforms:-
4
-STD
-Gform
1.2
3.0
-SMDapprovedtoCECC00802
7.62
6.62
7.62
0.26
4.0
3.0
z
13°
Max
DESCRIPTION
0.5
The 4N35, 4N36, 4N37 series of optically
coupled isolators consist of infrared light
emitting diode and NPN silicon photo transistor
in a standard 6 pin dual in line plastic package.
3.35
0.5
ABSOLUTEMAXIMUMRATINGS
(25°Cunlessotherwisespecified)
FEATURES
z
Options :-
10mm lead spread - add G after part no.
Surface mount - add SM after part no.
Tape&reel - add SMT&R after part no.
High Current Transfer Ratio (100% min.)
High Isolation Voltage (5.3kV ,7.5kVPK
All electrical parameters 100R%MStested
Custom electrical selections available
Storage Temperature
OperatingTemperature
Lead SolderingTemperature
-55°Cto+150°C
-55°Cto+100°C
z
z
z
z
(1/16inch(1.6mm)fromcasefor10secs) 260°C
)
INPUTDIODE
ForwardCurrent
ReverseVoltage
Power Dissipation
60mA
6V
105mW
APPLICATIONS
z
z
z
z
DC motor controllers
Industrial systems controllers
Measuring instruments
OUTPUTTRANSISTOR
Signal transmission between systems of
different potentials and impedances
Collector-emitterVoltageBVCEO
Collector-baseVoltageBV
Emitter-collectorVoltageBCVBOECO
CollectorCurrent
30V
70V
6V
50mA
160mW
OPTION G
OPTION SM
7.62
SURFACE MOUNT
Power Dissipation
POWERDISSIPATION
0.6
1.25
0.75
Total Power Dissipation
(deratelinearly2.67mW/°Cabove25°C)
200mW
0.26
0.1
10.46
9.86
10.16
ISOCOMCOMPONENTS2004LTD
Unit25B, ParkViewRoadWest,
ParkView Industrial Estate, Brenda Road
Hartlepool,Cleveland,TS25
17/7/08
DB90046
ELECTRICAL CHARACTERISTICS ( TA= 25°C Unless otherwise noted )
PARAMETER
MIN TYP MAX UNITS
TEST CONDITION
Input
Forward Voltage (VF)
1.2
1.5
10
V
IF = 10mA
ReverseCurrent(IR)
μA
V
VR =6V
Output
Collector-emitter Breakdown (BV
)
30
IC = 1mA
( NoteCE2O )
Collector-base Breakdown (BVCBO
Emitter-collectorBreakdown(BVECO
Collector-emitterDarkCurrent(ICEO
)
)
)
70
6
V
V
nA
IC = 100μA
IE = 10μA
VCE =10V
50
Coupled Current Transfer Ratio (CTR)
Collector-emitter Saturation VoltageVCE(SAT)
100
%
V
10mA IF , 10V VCE
10mA IF , 0.5mA IC
0.3
Input to Output Isolation Voltage VISO 5300
7500
Input-output Isolation Resistance RISO 5x1010
VRMS
V
See note 1
See note 1
VIO = 500V (note 1)
ΩPK
Output Rise Time tr
2
2
μs
μs
VCC =5V,IF=10mA
RL = 75Ω ( FIG 1)
OutputFallTime
tf
Note 1
Note 2
Measured with input leads shorted together and output leads shorted together.
Special Selections are available on request. Please consult the factory.
VCC
Input
ton
toff
RL = 75Ω
tf
tr
Output
Output
10%
10%
90%
90%
FIG 1
DB90046m-AAS/A5
17/7/08
Collector Power Dissipation vs. Ambient Temperature
Collector Current vs. Collector-emitter Voltage
200
TA = 25°C
50
50
150
100
40
30
30
20
15
20
10
50
0
10
IF = 5mA
0
-30
0
25
50
75
100 125
0
2
4
6
8
10
Ambient temperature TA ( °C )
Collector-emitter voltage VCE ( V )
Collector-emitter Saturation
Voltage vs. Ambient Temperature
Forward Current vs. Ambient Temperature
0.14
0.12
80
70
I = 10mA
ICF = 0.5mA
60
0.10
0.08
50
40
0.06
0.04
30
20
0.02
0
10
-30
0
25
50
75
100 125
-30
0
25
50
75
100
Ambient temperature TA ( °C )
Ambient temperature TA ( °C )
Relative Current Transfer Ratio
vs. Ambient Temperature
Relative Current Transfer Ratio
vs. Forward Current
1.4
1.2
1.5
1.0
IF = 10mA
VCE = 10V
1.0
0.8
0.6
0.4
0.2
0
0.5
0
V
= 10V
TACE= 25°C
-30
0
25
50
75
100
1
2
5
10
20
50
Ambient temperature TA ( °C )
Forward current IF (mA)
DB90046m-AAS/A5
17/7/08
相关型号：
4N36XSMT&R
Transistor Output Optocoupler, 1-Element, 5300V Isolation, SURFACE MOUNT, PLASTIC PACKAGE-6
ISOCOM
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