CNY17-1G [ISOCOM]
Transistor Output Optocoupler, 1-Element, 5300V Isolation, ROHS COMPLIANT, PLASTIC, DIP-6;
| 型号： | CNY17-1G |
| 厂家： | 
ISOCOM COMPONENTS |
| 描述： | Transistor Output Optocoupler, 1-Element, 5300V Isolation, ROHS COMPLIANT, PLASTIC, DIP-6 输出元件 光电 |
| 文件： | 总3页 (文件大小：50K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
CNY17-1X, CNY17-2X, CNY17-3X, CNY17-4X, CNY17-5X
CNY17-1, CNY17-2, CNY17-3, CNY17-4, CNY17-5
OPTICALLY COUPLED
ISOLATOR
PHOTOTRANSISTOR OUTPUT
APPROVALS
Dimensions in mm
2.54
l
UL recognised, File No. E91231
'X' SPECIFICATION APPROVALS
1
6
5
4
7.0
6.0
l
VDE 0884 in 3 available lead forms : -
- STD
2
3
- G form
1.2
3.0
- SMD approved to CECC 00802
Certified to EN60950 by the following
Test Bodies :-
l
7.62
6.62
7.62
0.26
4.0
3.0
Nemko - Certificate No. P96101299
Fimko - Registration No. 190469-01..22
Semko - Reference No. 9620076 01
Demko - Reference No. 305567
13°
Max
0.5
3.35
0.5
DESCRIPTION
The CNY17-1, CNY17-2, CNY17-3, CNY17-4,
CNY17-5 series of optically coupled isolators
consist of an infrared light emitting diode and a
NPN silicon photo transistor in a standard 6 pin
dual in line plastic package.
ABSOLUTE MAXIMUM RATINGS
(25°C unless otherwise specified)
Storage Temperature
Operating Temperature
-55°C to + 150°C
-55°C to + 100°C
FEATURES
Lead Soldering Temperature
(1/16 inch (1.6mm) from case for 10 secs) 260°C
l
Options :-
10mm lead spread - add G after part no.
Surface mount - add SM after part no.
Tape&reel - add SMT&R after part no.
High BVCEO (70V min)
High Isolation Voltage (5.3kV ,7.5kVPK
All electrical parameters 100R%MStested
Custom electrical selections available
INPUT DIODE
l
l
l
l
Forward Current
Reverse Voltage
Power Dissipation
60mA
6V
105mW
)
APPLICATIONS
l
l
l
l
DC motor controllers
Industrial systems controllers
Measuring instruments
Signal transmission between systems of
different potentials and impedances
OUTPUT TRANSISTOR
Collector-emitter Voltage BVCEO
Collector-base Voltage BVCBO
Emitter-collector Voltage BVECO
Power Dissipation
70V
70V
6V
160mW
OPTION G
7.62
OPTION SM
SURFACE MOUNT
POWER DISSIPATION
Total Power Dissipation
(derate linearly 2.67mW/°C above 25°C)
200mW
0.6
0.1
1.25
0.75
0.26
10.46
9.86
10.16
ISOCOM INC
1024 S.GreenvilleAve,Suite240,
Allen, TX75002 USA
ISOCOMCOMPONENTSLTD
Unit25B, ParkViewRoadWest,
Park View Industrial Estate, Brenda Road
Tel:(214)495-0755 Fax:(214)495-0901
e-mail info@isocom.com
Hartlepool,TS251YDEnglandTel:(01429)863609
Fax:(01429)863581 e-mail sales@isocom.co.uk
http://www.isocom.com
http://www.isocom.com
17/11/00
DB91081-AAS/A1
ELECTRICAL CHARACTERISTICS ( TA= 25°C Unless otherwise noted )
PARAMETER
MIN TYP MAX UNITS
TEST CONDITION
Input
Forward Voltage (VF)
Reverse Voltage (VR)
Reverse Current (IR)
1.2
1.65
10
V
V
µA
IF = 60mA
IR = 10µA
VR = 6V
6
Output
Collector-emitter Breakdown (BVCEO
)
70
70
V
V
I = 1mA ( Note 2 )
Collector-base Breakdown (BVCBO
Emitter-collector Breakdown (BVECO
Collector-emitter Dark Current (ICEO
)
ICC = 100µA
)
6
V
nA
IE = 100µA
VCE = 10V
)
50
Coupled Current Transfer Ratio (CTR) (Note 2)
CNY17-1
CNY17-2
CNY17-3
40
63
100
80
125
200
%
%
%
10mA IF , 5V VCE
10mA I , 5V VCE
10mA IFF , 5V V
CE
CNY17-4
CNY17-5
CNY17-1
CNY17-2
CNY17-3
160
200
13
22
34
320
400
%
%
%
%
%
10mA IF , 5V VCE
10mA IF , 5V VCE
1mA IF , 5V VCE
1mA I , 5V V
1mA IFF , 5V VCE
CE
CNY17-4
CNY17-5
56
68
%
%
V
VRMS
1mA IF , 5V VCE
1mA IF , 5V VCE
10mA IF , 2.5mA
See note 1
Collector-emitter Saturation VoltageVCE(SAT)
Input to Output Isolation Voltage VISO 5300
0.4
7500
VPK
See note 1
Input-output Isolation Resistance RISO 5x1010
Ω
VIO = 500V (note 1)
Note 1
Note 2
Measured with input leads shorted together and output leads shorted together.
Special Selections are available on request. Please consult the factory.
SWITCHING CHARACTERISTICS
1. Linear Operation (without saturation) Fig 1.
2. Switching Operation (with saturation) Fig 2
IF = 10mA, VCC = 5V, RL = 75Ω
VCC = 5V, RL = 1kΩ
-1
- 4
(IF=5mA)
-2 and -3
(IF=10mA)
UNITS
GROUP
UNITS
(I =20mA)
ton
tr
toff
tf
Turn-on Time
Rise Time
Turn-off Time
Fall Time
F
µs
3.0
2.0
2.3
2.0
250
µs
µs
µs
kHz
ton
tr
toff
tf
6.0
4.6
25
µs
µs
µs
µs
V
4.2
3.0
23
14
< 0.4
Turn-on Time
Rise Time
Turn-off Time
Fall Time
3.0
2.0
18
FCO
Cut-off Frequency
15
11
VCESAT
INPUT
VCC = 5.0V
VCC = 5.0V
toff
ton
RL = 75Ω
RL = 1kΩ
tr
tf
OUTPUT
OUTPUT
OUTPUT
10%
90%
10%
90%
FIG 1
FIG 2
17/11/00
DB91081-AAS/A1
Collector Power Dissipation vs. Ambient Temperature
Collector Current vs. Collector-emitter Voltage
( normalised to CNY17-3 )
200
TA = 25°C
50
150
100
40
30
50
30
20
15
20
10
50
0
10
IF = 5mA
0
0
2
4
6
8
10
-30
0
25
50
75
100 125
Collector-emitter voltage VCE ( V )
Ambient temperature TA ( °C )
Forward Current vs. Ambient Temperature
Current Transfer Ratio vs. Forward Current
320
280
240
80
70
V
= 5V
TACE= 25°C
CNY17-5
CNY17-4
60
200
160
50
40
CNY17-3
CNY17-2
30
20
120
80
40
0
10
0
CNY17-1
1
2
5
10
20
50
-30
0
25
50
75
100 125
Ambient temperature TA ( °C )
Forward current IF (mA)
Collector-emitter Saturation
Voltage vs. Ambient Temperature
Relative Current Transfer Ratio
vs. Ambient Temperature
0.28
0.24
1.5
1.0
IF = 10mA
VCE = 5V
I = 10mA
ICF = 2.5mA
0.20
0.16
0.12
0.08
0.5
0
0.04
0
-30
0
25
50
75
100
-30
0
25
50
75
100
Ambient temperature TA ( °C )
Ambient temperature TA ( °C )
17/11/00
DB91081-AAS/A1
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