H11C2-SMT&R [ISOCOM]
Optocoupler - Trigger Device Output, 1 CHANNEL SCR OUTPUT OPTOCOUPLER, SURFACE MOUNT, PLASTIC, DIP-6;型号: | H11C2-SMT&R |
厂家: | ISOCOM COMPONENTS |
描述: | Optocoupler - Trigger Device Output, 1 CHANNEL SCR OUTPUT OPTOCOUPLER, SURFACE MOUNT, PLASTIC, DIP-6 输出元件 光电 |
文件: | 总4页 (文件大小:76K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
H11C1X, H11C2X, H11C3X, H11C4X, H11C5X, H11C6X
H11C1, H11C2, H11C3, H11C4, H11C5, H11C6
PHOTON COUPLED ISOLATOR Ga As
INFRARED EMITTING DIODE &
LIGHT ACTIVATED SCR
Dimensions in mm
APPROVALS
2.54
l
UL recognised, File No. E91231
1
2
6
7.0
6.0
'X' SPECIFICATION APPROVALS
l
5
4
VDE 0884 in 2 available lead forms : -
- STD
- G form
3
7.62
max.
8.3 max.
5.1
DESCRIPTION
max.
0.5
min.
The H11C_ series are optically coupled isolators
consisting of infrared light emitting diode and a
light activated silicon controlled rectifier in a
standard 6pin dual in line plastic package.
3.9
3.1
15°
Max
0.25
0.48
ABSOLUTE MAXIMUM RATINGS
(25°C unless otherwise specified)
FEATURES
l
Options :-
Storage Temperature
Operating Temperature
Lead Soldering Temperature
(1/16 inch (1.6mm) from case for 10 secs) 260°C
-55°C to + 150°C
-55°C to + 100°C
10mm lead spread - add G after part no.
Surface mount - add SM after part no.
Tape&reel - add SMT&R after part no.
High Isolation Voltage (5.3kVRMS ,7.5kVPK
High Surge Anode Current (5.0 A)
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)
High Blocking Voltage (200V*1, 400V*1)
Low Turn on Current (5mA typical)
All electrical parameters 100% tested
Custom electrical selections available
INPUT DIODE
Forward Current
60mA
Forward Current (Peak)
(1µs pulse, 300 pps)
Reverse Voltage
3A
6V
Power Dissipation
100mW
DETECTOR
APPLICATIONS
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10A, T2L compatible, Solid State Relay
Peak Forward Voltage
H11C1, H11C2, H11C3
H11C4, H11C5, H11C6
Peak Reverse Gate Voltage
RMS On-state Current
Peak On-state Current
(100µs, 1% duty cycle)
Surge Current (10ms)
Power Dissipation
25W Logic Indicator Lamp Driver
400V Symmetrical transistor coupler
200V*1
400V*1
6V
300mA
OPTION G
8.3 max
OPTION SM
SURFACEMOUNT
10A
5A
300mW
1.2
0.6
1.4
0.9
0.26
*1 IMPORTANT : A resistor must be connected
between gate and cathode (pins 4 & 6) to prevent false
firing (RGK < 56kΩ)
10.2
9.5
10.16
ISOCOM INC
1024 S.GreenvilleAve,Suite240,
Allen, TX75002 USA
Tel:(214)495-0755 Fax:(214)495-0901
e-mail info@isocom.com
ISOCOM COMPONENTS LTD
Unit 25B, Park View Road West,
Park View Industrial Estate, Brenda Road
Hartlepool, Cleveland, TS25 1YD
Tel: (01429) 863609 Fax :(01429) 863581
http://www.isocom.com
5/12/00
DB92010-AAS/A4
ELECTRICAL CHARACTERISTICS ( TA= 25°C Unless otherwise noted )
PARAMETER
MIN TYP MAX UNITS
TEST CONDITION
Input
Forward Voltage (VF)
Reverse Voltage (VR)
1.2
1.5
V
V
IF = 10mA
IR = 10µA
3
Output
(note 2)
Peak Off-state Voltage (VDM
H11C1, H11C2, H11C3
)
200
400
V
V
R =10kΩ, ID= 50µA,
TAG=K 100°C
H11C4, H11C5, H11C6
R =10kΩ,ID=150µA,
TAG=K 100°C
Peak Reverse Voltage (VRM
H11C1, H11C2, H11C3
)
200
400
V
V
R =10kΩ, ID= 50µA,
TAG=K 100°C
H11C4, H11C5, H11C6
R =10kΩ,ID=150µA,
TAG=K 100°C
On-state Voltage (VTM
Off-state Current (IDM
)
1.1
1.3
V
ITM = 300mA
)
H11C1, H11C2, H11C3
50
µA
RGK=10kΩ, IF= 0,
VDM=200V, TA=100°C
H11C4, H11C5, H11C6
150 µA
RGK=10kΩ, IF= 0,
VDM=400V, TA=100°C
Reverse Current (IR )
H11C1, H11C2, H11C3
50
µA
RGK=10kΩ, IF= 0,
VDM=200V, TA=100°C
H11C4, H11C5, H11C6
150 µA
RGK=10kΩ, IF= 0,
VDM=400V, TA=100°C
Coupled Input Current to Trigger ( IFT ) (note 2)
H11C1, H11C2, H11C4, H11C5
H11C3, H11C6
20
30
11
14
mA
mA
mA
mA
V/µs
V
VAK =50V, RGK=10kΩ
VAK =50V, RGK=10kΩ
VAK=100V, RGK=27kΩ
VAK=100V, RGK=27kΩ
H11C1, H11C2, H11C4, H11C5
H11C3, H11C6
Coupled dv/dt, Input to Output (dv/dt) 500
Input to Output Isolation Voltage VISO 5300
7500
See note 1
See note 1
VRMS
ΩPK
pF
Input-output Isolation Resistance R
1011
V = 500V (note 1)
Input-output Capacitance
CIfSO
2
VIO= 0, f =1MHz
Note 1
Note 2
Measured with input leads shorted together and output leads shorted together.
Special Selections are available on request. Please consult the factory.
DB92010-AAS/A4
5/12/00
Input Current to Trigger vs.
Anode to Cathode Voltage
Input Current to Trigger vs.
Ambient Temperature
100
12
10
Normalized to
VAK = 50V
=10kΩ
TAGK= 25 °C
RGK =300Ω
40
20
10
R
1kΩ
RGK =300Ω
1kΩ
4
2
4
2
10kΩ
27kΩ
1.0
10kΩ
27kΩ
56kΩ
1.0
0.4
0.4
56kΩ
Normalized to VAK = 50V,
0.2
0.1
0.2
0.1
RGK =10kΩ, TA = 25 °C
1
5
10
50 100 200
-60 -40 -20
0
20 40 60 80 100 120
Anode to cathode voltage VAK ( V )
Ambient temperature TA ( °C )
Input Current to Trigger Distribution
vs. Ambient Temperature
Input Current to Trigger vs.
Pulse Width
100
10
Normalized to
VAK = 50V
=10kΩ
TAGK= 25 °C
Normalized to
RGK =300Ω
V
= 50V
40
20
RAK =10kΩ
R
4
2
TAGK= 25 °C
1kΩ
10
4
90th percentile
10th percentile
10kΩ
27kΩ
1
2
1
56kΩ
0.4
0.4
0.2
0.2
0.1
0.1
-40 -20
0
20 40 60 80 100
1
2
4 6 10 20 40 60 100 200 400 1000
Ambient temperature TA ( °C )
Pulse width ( µs )
Input Characteristics IF vs. VF
Turn on Time vs. Input Current
24
22
100
VAK = 50V
10kΩ RGK=1kΩ
t = td + tr
40
20
tr o=n 1µs
20
18
25°C
10
100°C
-55°C
16
14
4
2
1
12
10
8
6
4
56kΩ
0.4
0.2
0.1
2
0
0 10 20 30 40 50 60 70 80 90 100
Input current IF (mA)
0
0.5
1
1.5
2
2.5
3
Forward voltage VF ( V )
5/12/00
DB92010-AAS/A4
Holding Current vs. Ambient
Temperature
Maximum Transient Thermal Impedence
10000
1000
1. Lead temperature measured at the
widest portion of the SCR anode lead.
2. Ambient temperature measured at
a point 1/2" from the device.
Normalized to
VAK = 50V
=10kΩ
TAGK= 25 °C
400
200
4000
2000
RGK =300Ω
1kΩ
R
Junction to ambient
100
1000
40
400
200
100
10kΩ
27kΩ
20
10
4
40
20
10
56kΩ
2
1
-60 -40 -20
0
20 40 60 80 100 120
0.001 0.01
0.1
1 2 4 10
100
Ambient temperature TA ( °C )
Time (seconds)
Off State Forward Current vs.
Ambient Temperature
On State Current vs. Maximum
Allowable Temperature
10000
4000
2000
1000
100
90
1. Ambient temp. half-sine wave avg
2. Ambient temp. DC current
3. Anode lead temp. half-sine wave avg
4. Anode lead temp. DC current
Normalized to
V
= 50V
TAAK= 25 °C
80
70
400
200
100
60
50
VAK = 400V
VAK = 200V
40
30
20
VAK = 50V
40
20
10
4
2
1
10
0
1. 2.
0.4
3.
4.
0.8
0
25
50
75
100
0
0.2
0.6
1.0
Ambient temperature TA ( °C )
On state current ( Α )
On State Characteristics
dV/dt vs. Ambient temperature
2
1000
400
RGK =300Ω
1
0.4
0.2
0.1
100
40
1kΩ
10kΩ
27kΩ
10
4
0.04
0.02
0.01
1
0.4
Increases to forward
breakover voltage
56kΩ
0.1
25
50
75
100
0
1
2
3
4
Ambient temperature TA ( °C )
On state voltage VT ( V )
5/12/00
DB92010-AAS/A4
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