H11D4X [ISOCOM]

HIGH VOLTAGE OPTICALLY COUPLED ISOLATOR PHOTOTRANSISTOR OUTPUT; 高压光耦合隔离器光电晶体管输出
H11D4X
型号: H11D4X
厂家: ISOCOM COMPONENTS    ISOCOM COMPONENTS
描述:

HIGH VOLTAGE OPTICALLY COUPLED ISOLATOR PHOTOTRANSISTOR OUTPUT
高压光耦合隔离器光电晶体管输出

晶体 光电 晶体管 光电晶体管 输出元件 高压
文件: 总3页 (文件大小:72K)
中文:  中文翻译
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H11D1X, H11D2X, H11D3X, H11D4X  
H11D1, H11D2, H11D3, H11D4  
HIGH VOLTAGE OPTICALLY  
COUPLED ISOLATOR  
PHOTOTRANSISTOR OUTPUT  
Dimensions in mm  
'X'SPECIFICATIONAPPROVALS  
2.54  
z
VDE0884in3availableleadforms:-  
1
2
3
6
5
4
-STD  
-Gform  
7.0  
6.0  
-SMDapprovedtoCECC00802  
1.2  
7.62  
6.62  
7.62  
0.26  
4.0  
3.0  
DESCRIPTION  
The H11D series of optically coupled isolators  
consist of infrared light emitting diode and  
NPN silicon photo transistor in a standard 6 pin  
dual in line plastic package.  
13°  
Max  
0.5  
3.0  
3.35  
0.5  
ABSOLUTEMAXIMUMRATINGS  
(25°Cunlessotherwisespecified)  
FEATURES  
z
Options :-  
10mm lead spread - add G after part no.  
Surface mount - add SM after part no.  
Tape&reel - add SMT&R after part no.  
High Isolation Voltage (5.3kV ,7.5kV  
High BVCER ( 300V - H11DR1M,SH11D2P)K  
( 200V - H11D3, H11D4 )  
Storage Temperature  
OperatingTemperature  
Lead SolderingTemperature  
-55°Cto+150°C  
-55°Cto+100°C  
z
z
)
(1/16inch(1.6mm)fromcasefor10secs) 260°C  
INPUTDIODE  
z
z
All electrical parameters 100% tested  
Custom electrical selections available  
ForwardCurrent  
ReverseVoltage  
Power Dissipation  
60mA  
6V  
100mW  
APPLICATIONS  
z
z
z
z
DC motor controllers  
Industrial systems controllers  
Measuring instruments  
Signal transmission between systems of  
different potentials and impedances  
OUTPUTTRANSISTOR  
Collector-emitterVoltageBVCER (RBE=1MΩ)  
H11D1,H11D2  
H11D3,H11D4  
300V  
200V  
Collector-baseVoltageBVCBO  
H11D1,H11D2  
300V  
200V  
H11D3,H11D4  
OPTION G  
OPTION SM  
SURFACE MOUNT  
Emitter-collectorVoltageBVECO  
CollectorCurrent  
6V  
100mA  
7.62  
Power Dissipation  
150mW  
POWERDISSIPATION  
0.6  
0.1  
1.25  
0.75  
0.26  
Total Power Dissipation  
(deratelinearly2.67mW/°Cabove25°C)  
250mW  
10.46  
9.86  
10.16  
ISOCOMCOMPONENTS2004LTD  
Unit25B, ParkViewRoadWest,  
ParkView Industrial Estate, Brenda Road  
Hartlepool,TS251UDEngland  
Tel:(01429)863609 Fax:(01429)863581 e-mail  
sales@isocom.co.ukhttp://www.isocom.com  
14/8/08  
DB91077  
ELECTRICAL CHARACTERISTICS ( TA= 25°C Unless otherwise noted )  
PARAMETER  
MIN TYP MAX UNITS  
TEST CONDITION  
Input  
Forward Voltage (VF)  
1.2  
1.5  
10  
V
IF = 10mA  
ReverseCurrent(IR)  
μA  
VR =6V  
Output  
Collector-emitter Breakdown (BVCER  
H11D1, H11D2  
)
)
300  
200  
V
V
I = 1mA, RBE = 1MΩ  
H11D3, H11D4  
(Cnote 2 )  
Collector-base Breakdown (BVCBO  
)
H11D1, H11D2  
H11D3, H11D4  
300  
200  
6
V
V
V
IC = 100μA  
IE = 100μA  
Emitter-collector Breakdown (BVECO  
Collector-emitter Dark Current (ICER  
H11D1, H11D2  
)
100 nA  
250 μA  
VCE = 200V,RBE=1MΩ  
V = 200V,RBE=1MΩ,  
TAC=E 100°C  
H11D3, H11D4  
100 nA  
250 μA  
VCE = 100V,RBE=1MΩ  
V = 100V,RBE=1MΩ,  
TAC=E 100°C  
Coupled Current Transfer Ratio (CTR)  
Collector-emitter Saturation VoltageVCE(SAT)  
20  
%
10mA IF , 10V VCE ,  
RBE = 1MΩ  
10mA IF , 0.5mA IC ,  
RBE = 1MΩ  
See note 1  
See note 1  
VIO = 500V (note 1)  
VCC = 10V, I = 2mA,  
RL = 100Ω ,Cfig 1  
0.4  
V
Input to Output Isolation Voltage VISO 5300  
7500  
Input-output Isolation Resistance RISO 5x1010  
VRMS  
V
ΩPK  
μs  
Turn-on Time  
Turn-off Time  
ton  
toff  
5
5
μs  
Note 1  
Note 2  
Measured with input leads shorted together and output leads shorted together.  
Special Selections are available on request. Please consult the factory.  
VCC  
Input  
ton  
toff  
RL = 100Ω  
tf  
tr  
Output  
Output  
10%  
10%  
90%  
90%  
FIG 1  
DB91077m-AAS/A3  
14/8/08  
Collector Power Dissipation vs. Ambient Temperature  
Relative Current Transfer Ratio vs.  
Forward Current ( normalised to 10mA IF )  
400  
10  
300  
200  
1.0  
0.1  
100  
0
VCE = 10V  
TABE= 25°C  
R
= 1MΩ  
0.01  
1
2
5
10  
20  
50  
-30  
0
25  
50  
75  
100 125  
Forward current IF (mA)  
Ambient temperature TA ( °C )  
Forward Current vs. Ambient Temperature  
Relative Current Transfer Ratio  
vs. Ambient Temperature  
80  
70  
2.4  
2.2  
Normalised to VCE = 10V ,  
IF = 10mA , RBE = 1MΩ ,  
TA = 25°C  
2.0  
1.8  
60  
IF = 20mA  
IF = 10mA  
IF = 5mA  
1.6  
50  
40  
1.4  
1.2  
1.0  
0.8  
0.6  
0.4  
0.2  
30  
20  
10  
0
-30  
0
25  
50  
75  
100 125  
-30  
0
25  
50  
75  
100  
Ambient temperature TA ( °C )  
Ambient temperature TA ( °C )  
Collector-base Current vs.  
Ambient Temperature  
Forward Voltage vs. Forward Current  
800  
700  
600  
500  
1.4  
1.3  
VCB= 10V  
IF = 50mA  
TA = -55°C  
TA = +25°C  
1.2  
1.1  
400  
300  
200  
V = 200V VCB= 10V VCB= 10V  
IFCB= 10mA IF = 10mA IF = 5mA  
1.0  
TA= +100°C  
0.9  
0.8  
100  
0
0.1 0.2 0.5  
1
2
5 10 20  
50  
-30  
0
25  
50  
75  
100  
Forward current IF (mA)  
Ambient temperature TA ( °C )  
DB91077m-AAS/A3  
14/8/08  

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