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H11G2-SMT&R [ISOCOM]

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H11G2-SMT&R
型号： H11G2-SMT&R
厂家： ISOCOM COMPONENTS    ISOCOM COMPONENTS
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输出元件 高压
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H11G1X, H11G2X, H11G3X  
H11G1, H11G2, H11G3  
HIGH VOLTAGE DARLINGTON  
OUTPUT OPTICALLY COUPLED  
ISOLATOR  
Dimensions in  
mm  
APPROVALS  
2.54  
l
UL recognised, File No. E91231  
1
6
7.0  
6.0  
'X' SPECIFICATION APPROVALS  
2
3
5
4
l
VDE 0884 in 2 available lead forms : -  
- STD  
- G form  
1.2  
7.62  
6.62  
7.62  
4.0  
3.0  
DESCRIPTION  
The H11G_ series are optically coupled isolators  
consisting of an infrared light emitting diode and  
a high voltage NPN silicon photo darlington  
which has an integral base-emitter resistor to  
optimise switching speed and elevated  
temperature characteristics in a standard 6pin  
dual in line plastic package.  
13°  
Max  
0.5  
3.0  
0.26  
3.35  
0.5  
ABSOLUTE MAXIMUM RATINGS  
(25°C unless otherwise specified)  
FEATURES  
Storage Temperature  
Operating Temperature  
Lead Soldering Temperature  
-55°C to + 150°C  
-55°C to + 100°C  
l
Options :-  
10mm lead spread - add G after part no.  
Surface mount - add SM after part no.  
Tape&reel - add SMT&R after part no.  
High Isolation Voltage (5.3kV ,7.5kV  
(1/16 inch (1.6mm) from case for 10 secs) 260°C  
l
l
l
l
)
High Current Transfer Ratio (R1M0S00% mPiKn)  
High BV (H11G1 - 100V min.)  
Low collCeEcOtor dark current :-  
100nA max. at 80V VCE  
INPUT DIODE  
Forward Current  
60mA  
3A  
Peak Forward Current  
(1µs pulse, 300pps)  
Reverse Voltage  
l
Low input current 1mA IF  
3V  
Power Dissipation  
100mW  
APPLICATIONS  
l
l
l
l
Modems  
Copiers, facsimiles  
Numerical control machines  
Signal transmission between systems of  
different potentials and impedances  
OUTPUT TRANSISTOR  
Collector-emitter Voltage BVCEO  
H11G3, H11G2, H11G1  
Collector-base Voltage BVCBO  
H11G3, H11G2, H11G1  
Emitter-baseVoltage BVECO  
Power Dissipation  
55, 80, 100V  
55, 80, 100V  
6V  
200mW  
OPTION G  
7.62  
OPTION SM  
SURFACE MOUNT  
POWER DISSIPATION  
0.6  
0.1  
1.25  
0.75  
0.26  
Total Power Dissipation  
260mW  
10.46  
9.86  
10.16  
ISOCOMCOMPONENTSLTD  
Unit25B, ParkViewRoadWest,  
Park View Industrial Estate, Brenda Road  
Hartlepool,TS251YDEnglandTel:(01429)863609  
Fax:(01429)863581 e-mail sales@isocom.co.uk  
http://www.isocom.com  
7/12/00  
DB92008m-AAS/a1  
ELECTRICAL CHARACTERISTICS ( TA= 25°C Unless otherwise noted )  
PARAMETER  
MIN TYP MAX UNITS  
TEST CONDITION  
Input  
Forward Voltage (VF)  
ReverseVoltage(VR)  
Reverse Current (IR)  
1.2  
1.5  
10  
V
V
µA  
IF = 10mA  
IR =10µA  
VR =6V  
3
Output  
Collector-emitter Breakdown (BVCEO )  
H11G1  
H11G2  
H11G3  
100  
80  
55  
V
V
V
I = 1mA  
IC = 1mA  
ICC = 1mA  
Collector-base Breakdown (BVCBO  
)
H11G1  
H11G2  
H11G3  
100  
80  
55  
6
V
V
V
V
I = 100µA  
IC = 100µA  
IC = 100µA  
IEC = 0.1mA  
Emitter-base Breakdown (BVEBO  
)
Collector-emitter Dark Current (ICEO  
)
H11G1  
H11G2  
H11G3  
100 nA  
100 nA  
100 nA  
VCE = 80V  
VCE = 60V  
VCE = 30V  
Coupled Collector Output Current ( IC )  
H11G1,H11G2  
H11G1,H11G2  
H11G3  
100  
5
2
mA  
mA  
mA  
10mAIF,1.2VVCE  
1mAIF,5VVCE  
1mAIF,5VVCE  
Collector-emitterSaturationVoltageVCE(SAT)  
H11G1,H11G2  
H11G1,H11G2  
H11G3  
1.0  
1.2  
1.2  
V
V
V
VRMS  
VPK  
Ω
pF  
µs  
µs  
1mAI , 1mAIC  
16mAFI ,50mAI  
20mAIF,50mAICC  
See notFe 1  
Input to Output Isolation Voltage VISO 5300  
7500  
See note 1  
Input-output Isolation Resistance RISO 1011  
V =500V(note1)  
Input-output Capacitance  
Turn-onTime  
Turn-offTime  
Cf  
ton  
toff  
0.5  
5
100  
VI=O 0,f=1MHz  
IF=10mA,V =5V,  
RL =100Ω,fC=C30Hz,  
pulse width equal to  
or less than 300µs  
Note 1  
Note 2  
Measured with input leads shorted together and output leads shorted together.  
Special Selections are available on request. Please consult the factory.  
FIGURE 1  
VCC  
Input  
ton  
toff  
tf  
IF = 10mA  
100Ω  
tr  
Output  
Input  
Output  
10%  
90%  
10%  
90%  
DB92008m-AAS/a1  
7/12/00  
Collector Power Dissipation vs. Ambient Temperature  
Normalized Output Current vs.  
Collector-emitter Voltage  
250  
100  
10  
50mA  
10mA  
200  
150  
100  
50  
1.0  
0.1  
IF = 1mA  
Normalized to  
I = 1mA  
(F300µs pulse),  
VCE = 5V  
0
0.01  
0
1
2
3
4
5
6
-30  
0
25  
50  
75  
100 125  
Collector-emitter voltage VCE ( V )  
Ambient temperature TA ( °C )  
Forward Current vs. Ambient Temperature  
Normalized Output Current vs.  
Ambient Temperature  
80  
70  
60  
50  
100  
10  
50mA  
10mA  
1.0  
0.1  
40  
30  
IF = 1mA  
Normalized to  
I = 1mA  
20  
(F300µs pulse),  
V
= 5V  
10  
0
TACE= 25 °C  
0.01  
-30  
0
25  
50  
75  
100 125  
-50  
-25  
0
25  
50  
75 100  
Ambient temperature TA ( °C )  
Ambient temperature TA ( °C )  
Collector Dark Current vs.  
Ambient Temperature  
Normalized Output Current vs.  
Input Current  
100k  
10k  
100  
VCE = 80V  
10  
1k  
50V  
VCE  
1.0  
100  
Normalized to  
I = 1mA  
(F300µs pulse),  
0.1  
10  
1
VCE = 10V  
V
= 5V  
TACE= 25 °C  
0.01  
0.1  
1.0  
10 100  
-30  
0
25  
50  
75  
100  
Input current IF (mA)  
Ambient temperature TA ( °C )  
DB92008m-AAS/a1  
7/12/00  

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