IL1G [ISOCOM]

Transistor Output Optocoupler, 1-Element, 5300V Isolation, PLASTIC, DIP-6;
IL1G
型号: IL1G
厂家: ISOCOM COMPONENTS    ISOCOM COMPONENTS
描述:

Transistor Output Optocoupler, 1-Element, 5300V Isolation, PLASTIC, DIP-6

文件: 总3页 (文件大小:81K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
IL1, IL2, IL5, IL74  
ILD1, ILD2, ILD5, ILD74  
ILQ1, ILQ2, ILQ5, ILQ74  
HIGH DENSITY  
PHOTOTRANSISTOR OPTICALLY  
COUPLED ISOLATORS  
APPROVALS  
IL1  
IL2  
IL5  
IL74  
Dimensions in mm  
2.54  
z
ULrecognised,FileNo.E91231  
IL* Package Code " GG "  
1
2
3
6
5
4
ILD*/ILQ* Package Code " FF "  
7.0  
6.0  
'X'SPECIFICATIONAPPROVALS  
Add 'X' after part number  
1.2  
3.0  
7.62  
6.62  
z
VDE 0884 in 3 available lead form : -  
7.62  
4.0  
3.0  
- STD  
- G form  
- SMD approved to CECC 00802  
13°  
Max  
0.5  
ILD1  
ILD2  
ILD5  
ILD74  
0.26  
3.35  
0.5  
2.54  
DESCRIPTION  
The IL*, ILD*, ILQ* series of optically coupled  
isolators consist of infrared light emitting diodes  
and NPN silicon photo transistors in space  
efficient dual in line plastic packages.  
1
2
3
4
8
7
6
5
7.0  
6.0  
FEATURES  
z
Options :-  
1.2  
10mm lead spread - add G after part no.  
Surface mount - add SM after part no.  
Tape&reel - add SMT&R after part no.  
Three package types  
HighCurrentTransferRatio(50%min)  
HighIsolationVoltage(5.3kVRMS,7.5kVPK)  
HighBVCEO (70Vmin)  
10.16  
9.16  
7.62  
4.0  
3.0  
z
z
z
z
13°  
Max  
0.5  
3.0  
0.26  
3.35  
0.5  
IL2,ILD2,ILQ2,IL5,ILD5,ILQ5  
ILQ1  
ILQ2  
ILQ5  
ILQ74  
1
2
3
4
16  
15  
14  
13  
APPLICATIONS  
z
z
z
z
Computerterminals  
Industrial systems controllers  
Measuring instruments  
Signal transmission between systems of  
different potentials and impedances  
2.54  
5
6
7
8
12  
11  
7.0  
6.0  
10  
9
OPTION G  
OPTION SM  
SURFACEMOUNT  
7.62  
1.2  
20.32  
19.32  
7.62  
4.0  
3.0  
13°  
Max  
0.6  
0.1  
0.5  
1.25  
0.75  
0.26  
10.46  
9.86  
0.26  
10.16  
3.0  
3.35  
0.5  
ISOCOMCOMPONENTS2004LTD  
Unit25B, ParkViewRoadWest,  
ParkView Industrial Estate, Brenda Road  
Hartlepool,Cleveland,TS251UD  
Tel:(01429)863609 Fax:(01429)863581  
17/7/08  
DB91088  
ABSOLUTEMAXIMUMRATINGS  
(25°Cunlessotherwisespecified)  
Storage Temperature  
OperatingTemperature  
-40°Cto+125°C  
-25°Cto+100°C  
Lead SolderingTemperature  
(1/16inch(1.6mm)fromcasefor10secs) 260°C  
INPUTDIODE  
ForwardCurrent  
ReverseVoltage  
Power Dissipation  
50mA  
6V  
70mW  
OUTPUTTRANSISTOR  
Collector-emitterVoltageBVCEO  
IL2,ILD2,ILQ2,IL5,ILD5,ILQ5  
IL1,ILD1,ILQ1,IL74,ILD74,ILQ74  
Emitter-collectorVoltageBVECO  
CollectorCurrent  
70V  
50V  
6V  
50mA  
150mW  
Power Dissipation  
POWERDISSIPATION  
Total Power Dissipation  
170mW  
(deratelinearly2.67mW/°Cabove25°C)  
ELECTRICAL CHARACTERISTICS ( TA = 25°C Unless otherwise noted )  
PARAMETER  
MIN TYP MAX UNITS  
TEST CONDITION  
IF =50mA  
Input  
ForwardVoltage(VF)  
ReverseCurrent(IR)  
1.2  
1.65  
10  
V
μA  
VR =4V  
Output  
Collector-emitterBreakdown(BVCEO  
IL2,ILD2,ILQ2,IL5,ILD5,ILQ5  
)
70  
V
IC = 1mA , ( Note 2 )  
IL1,ILD1,ILQ1,IL74,ILD74,ILQ74  
Emitter-collectorBreakdown(BVECO  
50  
6
V
V
nA  
IC = 1mA , ( Note 2 )  
IE =100μA  
VCE =10V  
)
Collector-emitterDarkCurrent(ICEO  
)
50  
Coupled CurrentTransferRatio(CTR)(Note2)  
IL1,ILD1,ILQ1  
20  
100  
50  
300  
500  
400  
%
%
%
10mAIF,10VVCE  
10mAI ,10VVCE  
IL2,ILD2,ILQ2  
IL5,ILD5,ILQ5  
10mAIFF,10VV  
CE  
IL74,ILD74,ILQ74  
12.5  
%
16mAIF,5VVCE  
Saturated Current Transfer Ratio  
IL1,ILD1,ILQ1  
IL2,ILD2,ILQ2  
IL5,ILD5,ILQ5  
IL74,ILD74,ILQ74  
Collector-emitterSaturation Voltage,VCE(SAT)  
Input to Output Isolation Voltage VISO  
Input to Output Isolation Voltage VISO  
Input-output Isolation Resistance RISO  
Output Rise Time tr  
75  
170  
100  
%
%
%
%
V
10mAIF,0.4VVCE  
10mAIF,0.4VVCE  
10mAIF,0.4VVCE  
16mAIF,0.5VVCE  
16mAIF,2mAIC  
12.5  
0.4  
5300  
7500  
5x1010  
VRMS See note 1  
VPK See note 1  
Ω
μs  
μs  
VIO =500V(note1)  
IF =10mA  
VCC=5V,RL =75Ω  
2
2
OutputFallTime  
tf  
Note 1  
Note 2  
Measured with input leads shorted together and output leads shorted together.  
Special Selections are available on request. Please consult the factory.  
DB91088m-AAS/A7  
17/7/08  
Collector Power Dissipation vs. Ambient Temperature  
Relative Current Transfer Ratio  
vs. Ambient Temperature  
200  
1.5  
1.0  
IF = 10mA  
VCE = 0.4V  
150  
100  
0.5  
0
50  
0
-30  
0
25  
50  
75  
100  
-30  
0
25  
50  
75  
100 125  
Ambient temperature TA ( °C )  
Ambient temperature TA ( °C )  
Relative Current Transfer Ratio  
vs. Forward Current  
Forward Current vs. Ambient Temperature  
60  
50  
2.8  
2.4  
40  
30  
2.0  
1.6  
1.2  
0.8  
20  
10  
0
V
= 0.4V  
TACE= 25°C  
0.4  
0
-30  
0
25  
50  
75  
100 125  
1
2
5
10  
20  
50  
Forward current IF (mA)  
Ambient temperature TA ( °C )  
Relative Current Transfer Ratio  
vs. Ambient Temperature  
Relative Current Transfer Ratio  
vs. Forward Current  
1.4  
1.2  
1.5  
1.0  
IF = 10mA  
V
CE = 10V  
1.0  
0.8  
0.6  
0.4  
0.5  
0
V
= 10V  
TACE= 25°C  
0.2  
0
1
2
5
10  
20  
50  
-30  
0
25  
50  
75  
100  
Forward current IF (mA)  
Ambient temperature TA ( °C )  
DB91088m-AAS/A7  
17/7/08  

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