IL74 [ISOCOM]
HIGH DENSITY PHOTOTRANSISTOR OPTICALLY; 高密度PHOTOTRANSISTOR OPTICALLY
| 型号： | IL74 |
| 厂家： | 
ISOCOM COMPONENTS |
| 描述： | HIGH DENSITY PHOTOTRANSISTOR OPTICALLY |
| 文件： | 总3页 (文件大小：87K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
IL1, IL2, IL5, IL74
ILD1, ILD2, ILD5, ILD74
ILQ1, ILQ2, ILQ5, ILQ74
HIGH DENSITY
PHOTOTRANSISTOR OPTICALLY
COUPLED ISOLATORS
APPROVALS
IL1
IL2
IL5
IL74
Dimensions in mm
2.54
z
ULrecognised,FileNo.E91231
IL* Package Code " GG "
1
2
3
6
5
4
ILD*/ILQ* Package Code " FF "
7.0
6.0
'X'SPECIFICATIONAPPROVALS
Add 'X' after part number
1.2
3.0
7.62
6.62
z
VDE 0884 in 3 available lead form : -
7.62
4.0
3.0
- STD
- G form
- SMD approved to CECC 00802
13°
Max
0.5
ILD1
ILD2
ILD5
ILD74
0.26
3.35
0.5
2.54
DESCRIPTION
The IL*, ILD*, ILQ* series of optically coupled
isolators consist of infrared light emitting diodes
and NPN silicon photo transistors in space
efficient dual in line plastic packages.
1
2
3
4
8
7
6
5
7.0
6.0
FEATURES
z
Options :-
1.2
10mm lead spread - add G after part no.
Surface mount - add SM after part no.
Tape&reel - add SMT&R after part no.
Three package types
HighCurrentTransferRatio(50%min)
HighIsolationVoltage(5.3kVRMS,7.5kVPK)
HighBVCEO (70Vmin)
10.16
9.16
7.62
4.0
3.0
z
z
z
z
13°
Max
0.5
3.0
0.26
3.35
0.5
IL2,ILD2,ILQ2,IL5,ILD5,ILQ5
ILQ1
ILQ2
ILQ5
ILQ74
1
2
3
4
16
15
14
13
APPLICATIONS
z
z
z
z
Computerterminals
Industrial systems controllers
Measuring instruments
Signal transmission between systems of
different potentials and impedances
2.54
5
6
7
8
12
11
7.0
6.0
10
9
OPTION G
OPTION SM
SURFACEMOUNT
7.62
1.2
20.32
19.32
7.62
4.0
3.0
13°
Max
0.6
0.1
0.5
1.25
0.75
0.26
10.46
9.86
0.26
10.16
3.0
3.35
0.5
ISOCOMCOMPONENTS2004LTD
Unit25B, ParkViewRoadWest,
ParkView Industrial Estate, Brenda Road
Hartlepool,Cleveland,TS251UD
Tel:(01429)863609 Fax:(01429)863581
17/7/08
DB91088
ABSOLUTEMAXIMUMRATINGS
(25°Cunlessotherwisespecified)
Storage Temperature
OperatingTemperature
-40°Cto+125°C
-25°Cto+100°C
Lead SolderingTemperature
(1/16inch(1.6mm)fromcasefor10secs) 260°C
INPUTDIODE
ForwardCurrent
ReverseVoltage
Power Dissipation
50mA
6V
70mW
OUTPUTTRANSISTOR
Collector-emitterVoltageBVCEO
IL2,ILD2,ILQ2,IL5,ILD5,ILQ5
IL1,ILD1,ILQ1,IL74,ILD74,ILQ74
Emitter-collectorVoltageBVECO
CollectorCurrent
70V
50V
6V
50mA
150mW
Power Dissipation
POWERDISSIPATION
Total Power Dissipation
170mW
(deratelinearly2.67mW/°Cabove25°C)
ELECTRICAL CHARACTERISTICS ( TA = 25°C Unless otherwise noted )
PARAMETER
MIN TYP MAX UNITS
TEST CONDITION
IF =50mA
Input
ForwardVoltage(VF)
ReverseCurrent(IR)
1.2
1.65
10
V
μA
VR =4V
Output
Collector-emitterBreakdown(BVCEO
IL2,ILD2,ILQ2,IL5,ILD5,ILQ5
)
70
V
IC = 1mA , ( Note 2 )
IL1,ILD1,ILQ1,IL74,ILD74,ILQ74
Emitter-collectorBreakdown(BVECO
50
6
V
V
nA
IC = 1mA , ( Note 2 )
IE =100μA
VCE =10V
)
Collector-emitterDarkCurrent(ICEO
)
50
Coupled CurrentTransferRatio(CTR)(Note2)
IL1,ILD1,ILQ1
20
100
50
300
500
400
%
%
%
10mAIF,10VVCE
10mAI ,10VVCE
IL2,ILD2,ILQ2
IL5,ILD5,ILQ5
10mAIFF,10VV
CE
IL74,ILD74,ILQ74
12.5
%
16mAIF,5VVCE
Saturated Current Transfer Ratio
IL1,ILD1,ILQ1
IL2,ILD2,ILQ2
IL5,ILD5,ILQ5
IL74,ILD74,ILQ74
Collector-emitterSaturation Voltage,VCE(SAT)
Input to Output Isolation Voltage VISO
Input to Output Isolation Voltage VISO
Input-output Isolation Resistance RISO
Output Rise Time tr
75
170
100
%
%
%
%
V
10mAIF,0.4VVCE
10mAIF,0.4VVCE
10mAIF,0.4VVCE
16mAIF,0.5VVCE
16mAIF,2mAIC
12.5
0.4
5300
7500
5x1010
VRMS See note 1
VPK See note 1
Ω
μs
μs
VIO =500V(note1)
IF =10mA
VCC=5V,RL =75Ω
2
2
OutputFallTime
tf
Note 1
Note 2
Measured with input leads shorted together and output leads shorted together.
Special Selections are available on request. Please consult the factory.
DB91088m-AAS/A7
17/7/08
Collector Power Dissipation vs. Ambient Temperature
Relative Current Transfer Ratio
vs. Ambient Temperature
200
1.5
1.0
IF = 10mA
VCE = 0.4V
150
100
0.5
0
50
0
-30
0
25
50
75
100
-30
0
25
50
75
100 125
Ambient temperature TA ( °C )
Ambient temperature TA ( °C )
Relative Current Transfer Ratio
vs. Forward Current
Forward Current vs. Ambient Temperature
60
50
2.8
2.4
40
30
2.0
1.6
1.2
0.8
20
10
0
V
= 0.4V
TACE= 25°C
0.4
0
-30
0
25
50
75
100 125
1
2
5
10
20
50
Forward current IF (mA)
Ambient temperature TA ( °C )
Relative Current Transfer Ratio
vs. Ambient Temperature
Relative Current Transfer Ratio
vs. Forward Current
1.4
1.2
1.5
1.0
IF = 10mA
V
CE = 10V
1.0
0.8
0.6
0.4
0.5
0
V
= 10V
TACE= 25°C
0.2
0
1
2
5
10
20
50
-30
0
25
50
75
100
Forward current IF (mA)
Ambient temperature TA ( °C )
DB91088m-AAS/A7
17/7/08
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