ISP321-4SM [ISOCOM]
Transistor Output Optocoupler, 4-Element, 5300V Isolation, ROHS COMPLIANT, SURFACE MOUNT, PLASTIC PACKAGE-16;
| 型号： | ISP321-4SM |
| 厂家： | 
ISOCOM COMPONENTS |
| 描述： | Transistor Output Optocoupler, 4-Element, 5300V Isolation, ROHS COMPLIANT, SURFACE MOUNT, PLASTIC PACKAGE-16 晶体 光电 晶体管 光电晶体管 输出元件 |
| 文件： | 总3页 (文件大小：86K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
ISP321-1X, ISP321-2X, ISP321-4X
ISP321-1, ISP321-2, ISP321-4
HIGH DENSITY MOUNTING
PHOTOTRANSISTOR
OPTICALLY COUPLED ISOLATORS
APPROVALS
ISP321-1X
ISP321-1
Dimensions in mm
2.54
l
ULrecognised,FileNo.E91231
'X'SPECIFICATIONAPPROVALS
l
VDE0884in3availableleadform:-
-STD
1
2
4
3
7.0
6.0
-Gform
1.2
-SMDapprovedtoCECC00802
l
CertifiedtoEN60950bythefollowing
Test Bodies :-
5.08
4.08
7.62
4.0
3.0
Nemko-CertificateNo.P01102465
Fimko-CertificateNo.FI18162
Semko-ReferenceNo.0202041/01-25
Demko-CertificateNo.311161-01
BSIapproved-CertificateNo. 8001
13°
Max
0.5
3.0
0.26
3.35
l
0.5
ISP321-2X
DESCRIPTION
ISP321-2
2.54
The ISP321-1 , ISP321-2 , ISP321-4 series of
optically coupled isolators consist of infrared
light emitting diodes and NPN silicon photo
transistors in space efficient dual in line plastic
packages.
1
8
7
6
5
2
3
7.0
6.0
4
1.2
3.0
FEATURES
10.16
9.16
l
Options :-
7.62
10mm lead spread - add G after part no.
Surface mount - add SM after part no.
Tape&reel - add SMT&R after part no.
High Current Transfer Ratio ( 50% min)
High Isolation Voltage (5.3kVRMS ,7.5kVPK
High BVCEO ( 80Vmin )
4.0
3.0
13°
0.5
l
l
l
l
l
Max
0.26
)
3.35
0.5
1
2
3
4
All electrical parameters 100% tested
Custom electrical selections available
16
15
14
ISP321-4X
ISP321-4
APPLICATIONS
l
l
l
l
Computer terminals
Industrial systems controllers
Measuring instruments
Signal transmission between systems of
different potentials and impedances
13
2.54
5
6
12
11
7.0
6.0
10
9
7
8
OPTION G
7.62
OPTION SM
SURFACE MOUNT
1.2
20.32
19.32
7.62
4.0
3.0
0.6
0.1
1.25
0.75
13°
Max
0.5
0.26
10.46
9.86
0.26
3.35
10.16
3.0
0.5
ISOCOMCOMPONENTSLTD
Unit25B, ParkViewRoadWest,
Park View Industrial Estate, Brenda Road
Hartlepool,TS251YDEnglandTel:(01429)863609
Fax:(01429)863581 e-mail sales@isocom.co.uk
http://www.isocom.com
24/3/03
DB91075m-AAS/A3
ABSOLUTE MAXIMUM RATINGS
(25°C unless otherwise specified)
Storage Temperature
OperatingTemperature
-55°C to + 125°C
-30°Cto+100°C
Lead Soldering Temperature
(1/16 inch (1.6mm) from case for 10 secs) 260°C
INPUT DIODE
Forward Current
Reverse Voltage
Power Dissipation
50mA
6V
70mW
OUTPUT TRANSISTOR
Collector-emitter Voltage BVCEO
Emitter-collector Voltage BVECO
Power Dissipation
80V
6V
150mW
POWER DISSIPATION
Total Power Dissipation
200mW
(derate linearly 2.67mW/°C above 25°C)
ELECTRICAL CHARACTERISTICS ( TA = 25°C Unless otherwise noted )
PARAMETER
MIN TYP MAX UNITS
TEST CONDITION
Input
Forward Voltage (VF)
1.0
1.15 1.3
10
V
IF = 10mA
Reverse Current (IR)
µA
V
VR =4V
Output
Collector-emitter Breakdown (BV
)
80
6
IC = 0.5mA
( NoCteEO2 )
Emitter-collector Breakdown (BVECO
)
V
IE = 100µA
Collector-emitter Dark Current (ICEO
)
100 nA
VCE = 48V
Coupled Current Transfer Ratio (CTR) (Note 2)
ISP321-1, ISP321-2, ISP321-4
50
600
600
600
%
%
%
%
V
V
VRMS
VPK
5mA IF , 5V VCE
CTR selection available
GB
BL
GB
100
200
30
1mA IF , 0.4V VCE
8mA IF , 2.4mA IC
1mA IF , 0.2mA IC
See note 1
Collector-emitter Saturation VoltageVCE (SAT)
GB
Input to Output Isolation Voltage VISO 5300
7500
0.4
0.4
Input-output Isolation Resistance RISO 5x1010
Response Time (Rise, tr)
ResponseTime(Fall, tf)
Ω
µs
µs
VIO = 500V (note 1)
VCE =2V,
IC =2mA, RL =100Ω
4
3
Note 1
Note 2
Measured with input leads shorted together and output leads shorted together.
Special Selections are available on request. Please consult the factory.
24/3/03
DB91075m-AAS/A3
Collector Power Dissipation vs. Ambient Temperature
Collector Current vs. Low
Collector-emitter Voltage
200
TA = 25°C
25
20
15
50
150
100
40
30
20
10
5
10
50
0
5
0
IF = 2mA
0
0.2
0.4
0.6
0.8
1.0
-30
0
25
50
75
100 125
Ambient temperature TA ( °C )
Collector-emitter voltage VCE ( V )
Forward Current vs. Ambient Temperature
Collector Current vs. Collector-emitter Voltage
60
50
50
TA = 25°C
50
30
20
40
30
40
30
15
10
20
20
10
0
10
IF = 5mA
0
-30
0
25
50
75
100 125
0
2
4
6
8
10
Ambient temperature TA ( °C )
Collector-emitter voltage VCE ( V )
Collector-emitter Saturation
Voltage vs. Ambient Temperature
Current Transfer Ratio vs. Forward Current
320
0.28
0.24
280
240
I = 5mA
IFC = 1mA
0.20
0.16
200
160
0.12
0.08
120
80
V
= 5V
TACE= 25°C
0.04
0
40
0
1
2
5
10
20
50
-30
0
25
50
75
100
Forward current IF (mA)
Ambient temperature TA ( °C )
DB91075m-AAS/A3
24/3/03
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