ISP817BLX-G [ISOCOM]
Transistor Output Optocoupler, 1-Element, 5300V Isolation, PLASTIC, DIP-4;
| 型号： | ISP817BLX-G |
| 厂家： | 
ISOCOM COMPONENTS |
| 描述： | Transistor Output Optocoupler, 1-Element, 5300V Isolation, PLASTIC, DIP-4 |
| 文件： | 总3页 (文件大小：77K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
ISP817X,
ISP817
HIGH DENSITY MOUNTING
PHOTOTRANSISTOR
OPTICALLY COUPLED ISOLATORS
APPROVALS
ISP817X
ISP817
Dimensions in mm
z
z
UL recognised, File No. E91231 under
Package System 'EE'
2.54
'X'SPECIFICATIONAPPROVALS
VDE 0884 in 3 available lead form : -
- STD
1
2
4
3
7.0
6.0
- G form
- SMD approved to CECC 00802
1.2
3.0
5.08
4.08
7.62
4.0
3.0
DESCRIPTION
The ISP817 series of optically coupled isolators
consist of infrared light emitting diodes and NPN
silicon photo transistors in space efficient dual in
line plastic packages.
13°
0.5
Max
0.26
3.35
0.5
FEATURES
z
Options :-
10mm lead spread - add G after part no.
Surface mount - add SM after part no.
Tape&reel - add SMT&R after part no.
High Current Transfer Ratio (50% min)
High Isolation Voltage (5.3kVRMS ,7.5kVPK
High BVCEO ( 80Vmin )
z
z
z
z
z
)
All electrical parameters 100% tested
Custom electrical selections available
APPLICATIONS
z
z
z
z
Computer terminals
Industrial systems controllers
Measuring instruments
Signal transmission between systems of
different potentials and impedances
OPTION G
7.62
OPTION SM
SURFACE MOUNT
0.6
1.25
0.75
0.1
0.26
10.46
10.16
9.86
ISOCOMCOMPONENTSLTD
Unit25B, ParkViewRoadWest,
ParkView Industrial Estate, Brenda Road
Hartlepool,Cleveland,TS251UD
Tel:(01429)863609 Fax:(01429)863581
16/2/11
DB92275
ABSOLUTEMAXIMUMRATINGS
(25°Cunlessotherwisespecified)
Storage Temperature
OperatingTemperature
Lead SolderingTemperature
-55°Cto+125°C
-30°Cto+100°C
(1/16inch(1.6mm)fromcasefor10secs) 260°C
INPUTDIODE
ForwardCurrent
ReverseVoltage
Power Dissipation
50mA
6V
70mW
OUTPUTTRANSISTOR
Collector-emitterVoltageBVCEO
Emitter-collectorVoltageBVECO
CollectorCurrent
80V
6V
50mA
Power Dissipation
150mW
POWERDISSIPATION
Total Power Dissipation
200mW
(derate linearly 2.67mW/°C above 25°C)
ELECTRICAL CHARACTERISTICS ( TA = 25°C Unless otherwise noted )
PARAMETER MIN TYP MAX UNITS
TEST CONDITION
Input
ForwardVoltage(VF)
1.2
1.4
10
V
IF =20mA
ReverseCurrent(IR)
μA
VR=4V
Output
Coupled
Collector-emitterBreakdown(BV ) 80
Emitter-collectorBreakdown(BVCEECOO) 6
V
V
nA
I =1mA
IEC =100μA
Collector-emitterDarkCurrent(ICEO
)
100
VCE =20V
CurrentTransferRatio(CTR)(Note2)
50
100
200
80
600
600
600
160
%
%
%
%
5mAIF,5VVCE
5mAI ,5VV
5mAIF,5VVCE
GB
BL
A
5mAIFF,5VVCE
CE
B
C
D
130
200
300
260
400
600
0.2
%
%
%
V
5mAIF,5VVCE
5mAIF,5VVCE
5mAIF,5VVCE
20mAIF,1mAIC
Collector-emitter Saturation VoltageVCE (SAT)
Input to Output Isolation Voltage VISO
5300
VRMS
See note 1
See note 1
7500
PK
Input-output Isolation Resistance RISO 5x1010
Output Rise Time tr
Ω
μs
μs
VIO=500V(note1)
VCE =2V,
IC =2mA, RL =100Ω
4
3
18
18
OutputFallTime tf
Note 1
Note 2
Measured with input leads shorted together and output leads shorted together.
Special Selections are available on request. Please consult the factory.
DB92275
16/2/11
Collector Power Dissipation vs. Ambient Temperature
Collector-emitter Saturation
Voltage vs. Forward Current
200
6
5
TA = 25°C
150
100
4
3
2
50
0
1
0
0
5
10
15
-30
0
25
50
75
100 125
Forward current IF (mA)
Ambient temperature TA ( °C )
Forward Current vs. Ambient Temperature
Collector Current vs. Collector-emitter Voltage
60
50
50mA
TA = 25°C
50
40
30
20
30mA
20mA
40
30
15mA
10mA
20
10
0
10
0
IF = 5mA
-30
0
25
50
75
100 125
0
2
4
6
8
10
Ambient temperature TA ( °C )
Collector-emitter voltage VCE ( V )
Collector-emitter Saturation
Voltage vs. Ambient Temperature
Current Transfer Ratio vs. Forward Current
320
0.14
0.12
280
240
I = 20mA
IFC = 1mA
0.10
0.08
200
160
0.06
0.04
120
80
V
= 5V
TACE= 25°C
0.02
0
40
0
1
2
5
10
20
50
-30
0
25
50
75
100
Forward current IF (mA)
Ambient temperature TA ( °C )
DB92275
16/2/11
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