ISP827-3G [ISOCOM]
Transistor Output Optocoupler, 2-Element, 5300V Isolation, ROHS COMPLIANT, PLASTIC, DIP-8;
| 型号： | ISP827-3G |
| 厂家： | 
ISOCOM COMPONENTS |
| 描述： | Transistor Output Optocoupler, 2-Element, 5300V Isolation, ROHS COMPLIANT, PLASTIC, DIP-8 输出元件 光电 |
| 文件： | 总3页 (文件大小：90K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
ISP817X,ISP827X,ISP847X3,2,1
ISP817,ISP827,ISP847-3,-2,-1
LOW INPUT CURRENT
PHOTOTRANSISTOR
OPTICALLY COUPLED ISOLATORS
APPROVALS
ISP817X3,2,1
ISP817-3,2,1
Dimensions in mm
2.54
l
l
ULrecognised,FileNo.E91231
'X'SPECIFICATIONAPPROVALS
VDE0884in3availableleadform:-
-STD
1
2
4
3
7.0
6.0
-Gform
1.2
-SMDapprovedtoCECC00802
CertifiedtoEN60950by
Nemko-CertificateNo.P01102465
l
5.08
4.08
7.62
4.0
3.0
DESCRIPTION
TheISP817-3,-2,-1,ISP827-3,-2,-1,ISP847-3,-2,-1
series of optically coupled isolators consist of
infrared light emitting diodes and NPN silicon
photo transistors in space efficient dual in line
13°
0.5
Max
3.0
0.26
3.35
0.5
ISP827X3,2,1
ISP827-3,2,1
plastic packages.
FEATURES
2.54
1
8
7
6
5
l
Options :-
2
3
10mm lead spread - add G after part no.
Surface mount - add SM after part no.
Tape&reel - add SMT&R after part no.
Low input current 0.5mA IF
HighCurrentTransferRatio(50%min)
HighIsolationVoltage(5.3kVRMS,7.5kVPK)
HighBVCEO (70Vmin)
All electrical parameters 100% tested
Custom electrical selections available
APPLICATIONS
7.0
6.0
4
1.2
l
l
l
l
l
l
10.16
9.16
7.62
4.0
3.0
13°
Max
0.5
3.0
0.26
3.35
l
l
l
l
Computerterminals
Industrial systems controllers
Measuring instruments
Signal transmission between systems of
different potentials and
0.5
1
2
3
4
16
15
14
ISP847X3,2,1
ISP847-3,2,1
13
2.54
impedances
5
6
12
11
7.0
6.0
10
9
7
8
OPTION SM
OPTION G
SURFACE MOUNT
7.62
1.2
20.32
19.32
7.62
4.0
3.0
0.6
0.1
13°
Max
1.25
0.75
0.5
0.26
10.46
9.86
10.16
0.26
3.35
3.0
0.5
ISOCOM COMPONENTS LTD
Unit 25B, Park View Road West,
Park View Industrial Estate, Brenda Road
Hartlepool, Cleveland, TS25 1YD
Tel: (01429) 863609 Fax :(01429) 863581
7/4/08
DB92239
ABSOLUTEMAXIMUMRATINGS
(25°C unless otherwise specified)
Storage Temperature
OperatingTemperature
-55°Cto+125°C
-30°Cto+100°C
Lead Soldering Temperature
(1/16inch(1.6mm)fromcasefor10secs) 260°C
INPUTDIODE
ForwardCurrent
Reverse Voltage
Power Dissipation
50mA
6V
70mW
OUTPUTTRANSISTOR
Collector-emitterVoltageBVCEO
Emitter-collectorVoltageBVECO
CollectorCurrent
70V
6V
50mA
150mW
Power Dissipation
POWERDISSIPATION
Total Power Dissipation
200mW
(derate linearly 2.67mW/°C above 25°C)
ELECTRICAL CHARACTERISTICS ( TA = 25°C Unless otherwise noted )
PARAMETER
MIN TYP MAX UNITS
TEST CONDITION
Input
Forward Voltage (VF)
1.2
1.4
10
V
IF = 20mA
Reverse Current (IR)
µA
V
VR =4V
Output
Collector-emitter Breakdown (BV
)
70
6
IC = 1mA
( NoCteEO2 )
Emitter-collectorBreakdown(BVECO
Collector-emitterDarkCurrent(ICEO
)
)
V
IE =10µA
VCE =20V
100 nA
Coupled Current Transfer Ratio (CTR) (Note 2)
ISP817-3, ISP827-3, ISP847-3
70
100
50
%
%
%
%
0.5mA IF , 0.4V VCE
1.0mA IF , 0.4V VCE
0.5mA IF , 0.4V VCE
1.0mA IF , 0.4V VCE
ISP817-2, ISP827-2, ISP847-2
ISP817-1, ISP827-1, ISP847-1
50
Collector-emitter Saturation Voltage -3
0.4
0.4
0.4
V
V
V
0.5mA IF , 0.35mA IC
0.5mA IF , 0.25mA IC
1.0mA IF , 0.5mA IC
-2
-1
Input to Output Isolation Voltage VISO 5300
7500
VRMS
VPK
Ω
µs
µs
See note 1
See note 1
VIO = 500V (note 1)
VCE = 2V ,
IC =2mA,RL=100Ω
Input-output Isolation Resistance RISO 5x1010
Output Rise Time tr
4
3
18
18
Output Fall Time
tf
Note 1
Note 2
Measured with input leads shorted together and output leads shorted together.
Special Selections are available on request. Please consult the factory.
DB92239
7/4/08
Collector Power Dissipation vs. Ambient Temperature
Collector Current vs. Low
Collector-emitter Voltage
200
TA = 25°C
2.0
1.6
1.2
150
100
IF = 1mA
0.8
0.4
0
IF = 0.5mA
50
0
0
0.2
0.4
0.6
0.8
1.0
-30
0
25
50
75
100 125
Ambient temperature TA ( °C )
Collector-emitter voltage VCE ( V )
Relative Current Transfer Ratio
vs. Ambient Temperature
Forward Current vs. Ambient Temperature
60
50
1.5
IF = 1mA
VCE = 0.4V
40
30
1.0
0.5
0
20
10
0
-30
0
25
50
75
100
-30
0
25
50
75
100 125
Ambient temperature TA ( °C )
Ambient temperature TA ( °C )
Collector-emitter Saturation
Voltage vs. Ambient Temperature
Current Transfer Ratio vs. Forward Current
120
0.28
0.24
100
I = 1mA
ICF = 0.5mA
0.20
0.16
80
60
40
0.12
0.08
V
= 0.4V
TACE= 25 °C
20
0
0.04
0
0.1
0.2
0.5
1
2
5
-30
0
25
50
75
100
Forward current IF (mA)
Ambient temperature TA ( °C )
DB92239
7/4/08
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