ISP844-2-SMT&R [ISOCOM]
Optocoupler - Transistor Output, 4 CHANNEL AC INPUT-TRANSISTOR OUTPUT OPTOCOUPLER, SURFACE MOUNT, PLASTIC, DIP-16;
| 型号： | ISP844-2-SMT&R |
| 厂家： | 
ISOCOM COMPONENTS |
| 描述： | Optocoupler - Transistor Output, 4 CHANNEL AC INPUT-TRANSISTOR OUTPUT OPTOCOUPLER, SURFACE MOUNT, PLASTIC, DIP-16 输入元件 输出元件 |
| 文件： | 总3页 (文件大小：1346K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
ISP814X,ISP824X,ISP844X3,2,1
ISP814,ISP824,ISP844-3,-2,-1
LOW INPUT CURRENT A.C. INPUT
PHOTOTRANSISTOR OPTICALLY
COUPLED ISOLATORS
APPROVALS
ISP814X3,2,1
ISP814-3,2,1
Dimensions in mm
2.54
l
ULrecognised,FileNo.E91231
7.0
6.0
1
2
4
3
'X'SPECIFICATIONAPPROVALS
l
l
VDE0884in3availableleadform:-
-STD
-Gform
-SMDapprovedtoCECC00802
CertifiedtoEN60950bythefollowing
Test Bodies :-
1.2
7.62
5.08
4.08
4.0
3.0
Nemko-CertificateNo.P96102022
Fimko-RegistrationNo.192313-01..25
Semko-ReferenceNo.963905201
Demko-ReferenceNo.305969
13°
Max
0.5
3.0
0.26
3.35
0.5
ISP824X3,2,1
ISP824-3,2,1
2.54
DESCRIPTION
1
2
8
7
TheISP814-3,-2,-1,ISP824-3,-2,-1,ISP844-3,-2,-1
series of optically coupled isolators consist of two
infrared light emitting diodes connected in inverse
parallel and NPN silicon photo transistors in space
efficient dual in line plastic packages.
7.0
6.0
3
4
6
5
1.2
10.16
9.16
7.62
0.26
FEATURES
4.0
3.0
l
Options :-
10mm lead spread - add G after part no.
Surface mount - add SM after part no.
Tape&reel - add SMT&R after part no.
Low input current ± 0.25mA I
13°
Max
0.5
3.0
l
l
l
l
3.35
High Isolation Voltage (5.3kV F ,7.5kVPK
All electrical parameters 100R%MStested
Custom electrical selections available
)
0.5
1
2
3
4
16
15
ISP844X3,2,1
ISP844-3,2,1
APPLICATIONS
14
13
l
Industrial systems controllers
2.54
l
Signal transmission between systems of
5
6
7
8
12
11
10
9
different potentials and impedances
7.0
6.0
OPTION G
OPTION SM
SURFACEMOUNT
7.62
1.2
20.32
19.32
7.62
4.0
3.0
0.6
0.1
13°
Max
1.25
0.75
0.5
0.26
10.46
9.86
10.16
0.26
3.35
3.0
0.5
ISOCOM COMPONENTS LTD
Unit 25B, Park View Road West,
Park View Industrial Estate, Brenda Road
Hartlepool, Cleveland, TS25 1YD
Tel: (01429) 863609 Fax :(01429) 863581
7/12/00
DB92449m-AAS/A4
ABSOLUTE MAXIMUM RATINGS
(25°C unless otherwise specified)
Storage Temperature
Operating Temperature
Lead Soldering Temperature
-55°C to + 125°C
-55°C to + 100°C
(1/16 inch (1.6mm) from case for 10 secs) 260°C
INPUT DIODE
Forward Current
Power Dissipation
± 50mA
70mW
OUTPUT TRANSISTOR
Collector-emitter Voltage BVCEO
Emitter-collector Voltage BVECO
Power Dissipation
70V
6V
150mW
POWER DISSIPATION
Total Power Dissipation
200mW
(derate linearly 2.67mW/°C above 25°C)
ELECTRICAL CHARACTERISTICS ( TA = 25°C Unless otherwise noted )
PARAMETER
MIN TYP MAX UNITS
TEST CONDITION
Input
Forward Voltage (VF)
1.2
1.4
V
IF = ± 20mA
Output
Collector-emitter Breakdown (BVCEO
( Note 2 )
)
70
6
V
V
IC = 1mA
Emitter-collector Breakdown (BVECO
Collector-emitter Dark Current (ICEO
)
IE = 100µA
VCE = 20V
)
100 nA
Coupled Current Transfer Ratio (CTR) (Note 2)
ISP814-3, ISP824-3, ISP844-3
20
40
80
%
%
%
± 0.25mAIF ,0.4V VCE
± 0.5mA IF , 0.4V VCE
± 1.0mA IF , 0.4V VCE.
ISP814-2, ISP824-2, ISP844-2
40
80
%
%
± 0.5mA IF , 0.4V VCE
± 1.0mA IF , 0.4V VCE
ISP814-1, ISP824-1, ISP844-1
Collector-Emitter Saturation Voltage-3
80
%
V
V
V
VRMS
VPK
Ω
µs
µs
± 1.0mA IF , 0.4V VCE
± 0.25mAIF,0.05mAIC
± 0.5mA IF , 0.2mA IC
± 1.0mA IF , 0.8mA IC
See note 1
See note 1
VIO = 500V (note 1)
VCE = 2V ,
0.4
0.4
0.4
-2
-1
Input to Output Isolation Voltage VISO 5300
7500
Input-output Isolation Resistance RISO 5x1010
Output Rise Time tr
4
3
18
18
Output Fall Time tf
IC=0.05mA,RL=100Ω
Note 1
Note 2
Measured with input leads shorted together and output leads shorted together.
Special Selections are available on request. Please consult the factory.
7/12/00
DB92449m-AAS/A4
Collector Power Dissipation vs. Ambient Temperature
Collector Current vs. Low
Collector-emitter Voltage
200
TA = 25°C
1.0
0.8
150
100
IF = ±1.0mA
0.6
0.4
IF = ±0.5mA
50
0
0.2
0
IF = ±0.25mA
-30
0
25
50
75
100 125
0
0.2
0.4
0.6
0.8
1.0
Ambient temperature TA ( °C )
Collector-emitter voltage VCE ( V )
Forward Current vs. Ambient Temperature
Relative Current Transfer Ratio
vs. Ambient Temperature
60
50
1.5
IF = ±1mA
VCE = 0.4V
40
30
1.0
0.5
0
20
10
0
-30
0
25
50
75
100 125
-30
0
25
50
75
100
Ambient temperature TA ( °C )
Ambient temperature TA ( °C )
Current Transfer Ratio vs. Forward Current
Collector-emitter Saturation
Voltage vs. Ambient Temperature
0.42
0.36
120
100
I = ±1mA
ICF = 0.8mA
0.30
0.24
80
60
40
0.18
0.12
V
= 0.4V
TACE= 25 °C
0.06
0
20
0
-30
0
25
50
75
100
0.1
0.2
0.5
1
2
5
Forward current IF (±mA)
Ambient temperature TA ( °C )
DB92449m-AAS/A4
7/12/00
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