MCT271X [ISOCOM]

暂无描述;


型号：	MCT271X
厂家：	ISOCOM COMPONENTS
描述：	暂无描述晶体光电晶体管光电晶体管输出元件
文件：	总3页 (文件大小：803K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

MCT270, MCT271, MCT272, MCT273,

MCT274, MCT275, MCT276, MCT277

OPTICALLY COUPLED

ISOLATOR

PHOTOTRANSISTOR OUTPUT

Dimensions in mm

APPROVALS

2.54

UL recognised, File No. E91231

7.0

6.0

DESCRIPTION

The MCT27_ series of optically coupled

isolators consist of an infrared light emitting

diode and NPN silicon photo transistor in a

standard 6 pin dual in line plastic package.

1.2

3.0

7.62

6.62

7.62

0.26

4.0

3.0

FEATURES

13°

Max

0.5

Options :-

10mm lead spread - add G after part no.

Surface mount - add SM after part no.

Tape&reel - add SMT&R after part no.

High Isolation Voltage (5.3kV ,7.5kV_PK

All electrical parameters 100^R%^MStested

Custom electrical selections available

3.35

0.5

)

ABSOLUTE MAXIMUM RATINGS

(25°C unless otherwise specified)

APPLICATIONS

Storage Temperature

Operating Temperature

Lead Soldering Temperature

(1/16 inch (1.6mm) from case for 10 secs) 260°C

-55°C to + 150°C

-55°C to + 100°C

DC motor controllers

Industrial systems controllers

Measuring instruments

Signal transmission between systems of

different potentials and impedances

INPUT DIODE

Forward Current

Reverse Voltage

Power Dissipation

60mA

105mW

OUTPUT TRANSISTOR

Collector-emitterVoltage BV_CEO

30V

(MCT275only)

BV_CEO

80V

Collector-baseVoltage BV_CBO

70V

160mW

Emitter-baseVoltage

Power Dissipation

BV_EBO

OPTION G

OPTION SM

SURFACEMOUNT

7.62

POWER DISSIPATION

Total Power Dissipation

(derate linearly 2.67mW/°C above 25°C)

200mW

0.6

0.1

1.25

0.75

0.26

10.46

9.86

10.16

ISOCOM COMPONENTS LTD

Unit 25B, Park View Road West,

Park View Industrial Estate, Brenda Road

Hartlepool, Cleveland, TS25 1YD

Tel: (01429) 863609 Fax :(01429) 863581

7/12/00

DB92544m-AAS/A1

ELECTRICAL CHARACTERISTICS ( T_A= 25°C Unless otherwise noted )

PARAMETER

MIN TYP MAX UNITS

TEST CONDITION

Input

Forward Voltage (V_F)

ReverseVoltage(V_R)

Reverse Current (I_R)

1.2

1.5

µA

I_F= 20mA

I_R=10µA

V_R=3V

Output

Collector-emitterBreakdown(BV_CEO

)

MCT27x(exceptMCT275)

I_C=1mA

MCT275

( note 2 )

Collector-baseBreakdown(BV_CBO

)

I_C=100µA

Emitter-baseBreakdown(BV_EBO

)

I_E=100µA

Collector-emitterDarkCurrent(I_CEO

)

V_CE=10V

Coupled Current Transfer Ratio (CTR)

MCT270

MCT271

MCT272

10mA I_F, 10V V_CE

150

MCT273

MCT274

MCT275

MCT276

MCT277

125

225

100

250

400

210

Collector-emitter Saturation VoltageV_CE(SAT)

0.4

16mA I_F, 2mA I_C

Input to Output Isolation Voltage V_ISO5300

V_RMS

V_PK

Ω

See note 1

V_IO= 500V (note 1)

7500

Input-output Isolation Resistance R_ISO5x10¹⁰

Switching Time t_ON, t_OFF

MCT270,272

MCT271

3.5

µs

V_CC=5V,R_L=100Ω,

I_C= 2mA, (fig 1)

MCT273

MCT274

MCT275,277

MCT276

Note 1

Note 2

Measured with input leads shorted together and output leads shorted together.

Special Selections are available on request. Please consult the factory.

V_CC

Input

t_on

t_off

R_L= 100Ω

t_f

t_r

Output

10%

90%

FIG 1

DB92544m-AAS/A2

7/12/00

Relative Current Transfer Ratio

vs. Ambient Temperature

Collector Power Dissipation vs. Ambient Temperature

200

1.5

1.0

I_F= 10mA

V_CE= 10V

150

100

0.5

-30

100 125

-30

100

Ambient temperature T_A( °C )

Forward Current vs. Ambient Temperature

Relative Current Transfer Ratio

vs. Forward Current

1.4

1.2

1.0

0.8

0.6

0.4

= 10V

T_A^CE= 25°C

0.2

-30

100 125

Forward current I_F(mA)

Ambient temperature T_A( °C )

Collector-emitter Saturation

Voltage vs. Ambient Temperature

Collector Current vs. Collector-emitter Voltage

(Normalised to MCT270,273,275,277)

0.28

T_A= 25°C

0.24

0.20

I = 16mA

I^F_C= 2mA

0.16

0.12

0.08

I_F= 5mA

0.04

-30

100

Ambient temperature T_A( °C )

Collector-emitter voltage V_CE( V )

7/12/00

DB92544m-AAS/A2

相关型号：