MOC213T&R [ISOCOM]

Transistor Output Optocoupler, 1-Element, 2500V Isolation, SOIC-8;
MOC213T&R
型号: MOC213T&R
厂家: ISOCOM COMPONENTS    ISOCOM COMPONENTS
描述:

Transistor Output Optocoupler, 1-Element, 2500V Isolation, SOIC-8

输出元件 光电
文件: 总3页 (文件大小:47K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
MOC205 , MOC206 , MOC207 , MOC208,  
MOC211 , MOC212 , MOC213 ,  
MOC215 , MOC216 , MOC217  
SMALL OUTLINE OPTICALLY  
COUPLED ISOLATOR  
TRANSISTOR OUTPUT  
DESCRIPTION  
Dimensions in mm  
8
1
7
2
6
3
5
8
This series of optically coupled isolators consist of  
a Gallium Arsenide infrared emitting diode and NPN  
silicon photo transistor mounted in a standard 8 pin  
SOIC package,which makes them ideally suited for  
high density applications with limited space.  
1
7
6
5
2
3
4
4
5.25  
4.75  
FEATURES  
5.0 Max  
4.9 Max  
l
Standard SOIC-8 Footprint with 0.05" Lead Spacing  
Specifiedmin.andmax.CTRat10mAIF , 10VVCE  
MOC205,40-80%  
l
3.9 Max  
MOC206,63-125%  
MOC207,100-200%  
3.3 Max  
MOC208,160-320%  
SpecifiedminimumCTRat10mAIF ,10VVCE  
MOC211,20%  
MOC212,50%  
MOC213,100%  
SpecifiedminimumCTRat1mAIF , 5VVCE  
MOC215,20%  
l
l
0.3  
Max  
0.1Min  
6.15  
5.85  
0.35  
0.45  
1.27  
3.81  
APPLICATIONS  
MOC216,50%  
MOC217,100%  
IsolationVoltage, 2500VRMS  
HighBVCEO (70Vmin)  
All electrical parameters 100% tested  
Available in Tape and Reel - add suffix " T& R "  
Custom electrical selections available  
l
l
l
Computerterminals  
l
l
l
l
l
Industrial systems controllers  
Hybrid substrates that require  
high density mounting  
Signal transmission between systems of  
different potentials and impedances  
l
ABSOLUTE MAXIMUM RATINGS  
( 25°C unless otherwise noted)  
OUTPUT TRANSISTOR  
Storage Temperature  
-550Cto+1250C  
-550Cto+1000C  
2600C  
Collector-emitterVoltageBVCEO  
Emitter-collectorVoltageBVECO  
Collector-baseVoltageBVCBO  
CollectorCurrent  
70V  
7V  
70V  
OperatingTemperature  
Lead Soldering Temperature  
(single wave for 10 secs)  
Input to Output Isolation Voltage  
50mA  
100mA  
2500VRMS  
CollectorCurrent  
(pw 10ms , 50% duty ratio)  
INPUT DIODE  
Power Dissipation  
150mW  
1250C  
(deratelinearly2.00mW/0Cabove250C)  
Junction Temperature  
ForwardCurrent  
Reverse Voltage  
60mA  
6V  
Peak Forward Current (tp 10µs)  
3A  
100mW  
PACKAGE  
Power Dissipation  
(deratelinearly1.33mW/0Cabove250C)  
Junction Temperature  
Total Power Dissipation  
250mW  
1250C  
(deratelinearly3.3mW/0Cabove250C)  
ISOCOM INC  
1024 S.GreenvilleAve,Suite240,  
Allen, TX75002 USA  
Tel:(214)495-0755 Fax:(214)495-0901  
e-mail info@isocom.com  
ISOCOMCOMPONENTSLTD  
Unit25B, ParkViewRoadWest,  
Park View Industrial Estate, Brenda Road  
Hartlepool,Cleveland,TS251YD  
Tel:(01429)863609 Fax:(01429)863581  
http://www.isocom.com  
7/12/00  
DB92245-AAS/A3  
ELECTRICAL CHARACTERISTICS (250C unless otherwise noted)  
TYP MAX UNITS  
PARAMETER  
ForwardVoltage(VF)  
Capacitance  
Reverse Current (IR)  
MIN  
TESTCONDITIONS  
1.2  
50  
1.5  
Volt  
pF  
Input  
IF =10mA  
V = 0 ,f = 1 MHz  
VRR=6V  
100 µA  
I =100µA  
IC = 100 µA  
ICE = 100 µA  
VCE =10V  
Collector-emitterVoltage(BVCEO  
)
70  
7
70  
Volt  
Volt  
Volt  
Emitter-collectorVoltage(BVECO  
Collector-baseVoltage(BVCBO  
Collector-emitterDarkCurrent(ICEO  
)
Output  
)
)
50  
nA  
CurrentTransferRatio(CTR) MOC205  
40  
63  
100  
160  
20  
80  
%
%
%
%
%
%
%
IF =10mA, VCE =10V  
MOC206  
MOC207  
MOC208  
MOC211  
MOC212  
MOC213  
125  
200  
320  
50  
100  
Coupled  
MOC205  
MOC206  
MOC207  
MOC208  
MOC215  
MOC216  
MOC217  
13  
22  
34  
56  
20  
50  
100  
%
%
%
%
%
%
%
IF =1mA, VCE =10V  
IF = 1 mA, VCE = 5V  
Collector-emitterSaturationVoltageVCE(SAT)  
(MOC205toMOC213)  
Collector-emitterSaturationVoltageVCE(SAT)  
(MOC215toMOC217)  
0.4  
0.4  
Volt  
Volt  
IF = 10 mA, IC = 2 mA  
IF = 1 mA, IC = 0.1 mA  
Capacitance Input to Output (CISO  
Input to Output Isolation Resistance (RISO  
Input to Output Isolation Voltage (VISO  
Output Turn on Time (ton)  
Output Turn off Time (toff)  
Output Rise Time (tr)  
)
0.3  
pF  
VRMS  
µs  
µs  
µs  
f = 1MHz (note 1)  
VIO =500V(note1)  
Note 1  
)
1011  
)
2500  
3.0  
3.0  
1.6  
2.2  
IC =2mA,  
VCC =10V,RL =100Ω  
Output Fall Time (tf)  
µs  
Note 1. Measured with input leads shorted together and output leads shorted together.  
VCC = 10V  
INPUT  
ton  
toff  
tr  
RL = 100Ω  
tf  
OUTPUT  
OUTPUT  
10%  
10%  
FIG 1  
90%  
90%  
DB92245-AAS/A3  
7/12/00  
CurrentTransferRatiovs.ForwardCurrent  
CollectorPowerDissipationvs.AmbientTemperature  
200  
320  
280  
240  
V =10V  
TACE= 25°C  
150  
100  
MOC208  
MOC207  
200  
160  
120  
80  
40  
0
MOC206  
MOC205  
50  
0
-30  
0
25  
50  
75  
100 125  
1
2
5
10  
20  
50  
Forward current IF (mA)  
Ambient temperature TA ( °C )  
ForwardCurrentvs.AmbientTemperature  
CurrentTransferRatiovs.ForwardCurrent  
320  
280  
240  
80  
70  
V =10V  
TACE= 25°C  
60  
200  
160  
50  
40  
MOC213  
30  
20  
120  
80  
MOC212  
MOC211  
40  
0
10  
0
-30  
0
25  
50  
75  
100 125  
1
2
5
10  
20  
50  
Ambient temperature TA ( °C )  
Forward current IF (mA)  
RelativeCurrentTransferRatio  
vs.AmbientTemperature  
CurrentTransferRatiovs.ForwardCurrent  
320  
280  
240  
V =5V  
TACE= 25°C  
1.5  
1.0  
IF = 10mA  
VCE =10V  
MOC217  
MOC216  
200  
160  
120  
80  
40  
0
0.5  
0
MOC215  
1
2
5
10  
20  
50  
-30  
0
25  
50  
75  
100  
Forward current IF (mA)  
Ambient temperature TA ( °C )  
DB92245-AAS/A3  
7/12/00  

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