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TIL194AX-G [ISOCOM]

Optocoupler - Transistor Output, 1 CHANNEL AC INPUT-TRANSISTOR OUTPUT OPTOCOUPLER, PLASTIC, DIP-4;
TIL194AX-G
型号： TIL194AX-G
厂家： ISOCOM COMPONENTS    ISOCOM COMPONENTS
描述：

Optocoupler - Transistor Output, 1 CHANNEL AC INPUT-TRANSISTOR OUTPUT OPTOCOUPLER, PLASTIC, DIP-4

晶体 光电 晶体管 光电晶体管 输出元件 输入元件
文件： 总3页 (文件大小：87K)
中文：  中文翻译
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TIL194, TIL195, TIL196, TIL194X, TIL195X, TIL196X  
TIL194A, TIL195A,TIL196A, TIL194AX, TIL195AX,TIL196AX  
TIL194B, TIL195B, TIL196B, TIL194BX, TIL195BX, TIL196BX  
HIGH DENSITY A.C. INPUT  
PHOTOTRANSISTOR OPTICALLY  
COUPLED ISOLATORS  
APPROVALS  
TIL194  
TIL194A  
TIL194B  
Dimensions in mm  
2.54  
l
ULrecognised,FileNo.E91231  
'X'SPECIFICATIONAPPROVALS  
7.0  
6.0  
1
2
4
3
l
VDE0884in3availableleadform:  
-STD  
-Gform  
1.2  
-SMDapprovedtoCECC00802  
l
TIL194X/AX/BXCertifiedtoEN60950bythe  
following Test Bodies :-  
7.62  
5.08  
4.08  
4.0  
3.0  
Nemko-CertificateNo.P01102465  
Fimko-CertificateNo.FI18162  
Semko-ReferenceNo.0202041/01-25  
Demko-CertificateNo.311161-01  
TIL194X/AX/BX:BSIapproved  
-CertificateNo.8001  
13°  
Max  
0.5  
3.0  
0.26  
TIL195  
l
3.35  
0.5  
2.54  
TIL195A  
TIL195B  
DESCRIPTION  
TheTIL194,TIL195,TIL196seriesofoptically  
coupled isolators consist of two infrared light  
emitting diodes connected in inverse parallel and  
NPN silicon photo transistors in space efficient  
dual in line plastic packages.  
1
2
8
7
7.0  
6.0  
3
4
6
5
1.2  
3.0  
10.16  
9.16  
7.62  
0.26  
FEATURES  
4.0  
3.0  
l
Options :-  
10mm lead spread - add G after part no.  
Surface mount - add SM after part no.  
Tape&reel - add SMT&R after part no.  
HighIsolationVoltage(5.3kVRMS,7.5kVPK)  
AC or polarity insensitive input  
All electrical parameters 100% tested  
Custom electrical selections available  
13°  
Max  
0.5  
l
l
l
l
3.35  
0.5  
1
2
3
4
16  
15  
TIL196  
TIL196A  
TIL196B  
APPLICATIONS  
14  
13  
l
l
l
l
Computerterminals  
Industrial systems controllers  
Telephone sets, Telephone exchangers  
Signal transmission between systems of  
different potentials and impedances  
2.54  
5
6
7
8
12  
11  
10  
9
7.0  
6.0  
OPTION G  
OPTION SM  
1.2  
SURFACEMOUNT  
7.62  
20.32  
19.32  
7.62  
4.0  
3.0  
13°  
Max  
0.6  
0.1  
0.5  
1.25  
0.75  
0.26  
0.26  
3.35  
10.46  
9.86  
3.0  
10.16  
0.5  
ISOCOM COMPONENTS LTD  
Unit 25B, Park View Road West,  
Park View Industrial Estate, Brenda Road  
Hartlepool, Cleveland, TS25 1YD  
Tel: (01429) 863609 Fax :(01429) 863581  
14/5/03  
DB92398m-AAS/A6  
ABSOLUTE MAXIMUM RATINGS  
(25°C unless otherwise specified)  
Storage Temperature  
OperatingTemperature  
Lead Soldering Temperature  
-55°C to + 125°C  
-30°Cto+100°C  
(1/16 inch (1.6mm) from case for 10 secs) 260°C  
INPUT DIODE  
Forward Current  
Power Dissipation  
± 50mA  
70mW  
OUTPUT TRANSISTOR  
Collector-emitter Voltage BVCEO  
Emitter-collector Voltage BVECO  
Power Dissipation  
35V  
6V  
150mW  
POWER DISSIPATION  
Total Power Dissipation  
200mW  
(derate linearly 2.67mW/°C above 25°C)  
ELECTRICAL CHARACTERISTICS ( TA = 25°C Unless otherwise noted )  
PARAMETER  
MIN TYP MAX UNITS  
TEST CONDITION  
Input  
Forward Voltage (VF)  
1.2  
1.4  
V
IF = ± 20mA  
Output  
Collector-emitter Breakdown (BVCEO  
( Note 2 )  
)
35  
6
V
V
IC = 0.5mA  
Emitter-collector Breakdown (BVECO  
)
IE = 100µA  
Collector-emitterDarkCurrent(ICEO  
)
100 nA  
VCE =20V  
Coupled Current Transfer Ratio (CTR) (Note 2)  
TIL194, TIL195, TIL196  
20  
50  
100  
%
%
%
± 5mAIF , 5V VCE  
TIL194A, TIL195A, TIL196A  
TIL194B, TIL195B, TIL196B  
Collector-Emitter Saturation VoltageVCE (SAT)  
0.4  
V
± 5mAIF , 1mAIC  
Input to Output Isolation Voltage VISO 5300  
7500  
VRMS  
VPK  
See note 1  
See note 1  
Input-output Isolation Resistance RISO 5x1010  
Ω
VIO = 500V (note 1)  
Response Time (Rise), tr  
Response Time (Fall), tf  
4
3
µs  
µs  
VCE =2V,  
IC=2mA,RL=100Ω  
Note 1  
Note 2  
Measured with input leads shorted together and output leads shorted together.  
Special Selections are available on request. Please consult the factory.  
14/5/03  
DB92398m-AAS/A6  
Collector Current vs. Low  
Collector-emitter Voltage  
Collector Power Dissipation vs. Ambient Temperature  
200  
TA = 25°C  
25  
20  
15  
±50  
150  
100  
±40  
±30  
±20  
±10  
10  
50  
0
±5  
5
0
IF = ±2mA  
0
0.2  
0.4  
0.6  
0.8  
1.0  
-30  
0
25  
50  
75  
100 125  
Collector-emitter voltage VCE ( V )  
Ambient temperature TA ( °C )  
Forward Current vs. Ambient Temperature  
Collector Current vs. Collector-emitter Voltage  
60  
50  
TA = 25°C  
50  
±50  
40  
30  
±30  
40  
30  
±20  
±15  
20  
20  
10  
0
±10  
10  
IF = ±5mA  
0
-30  
0
25  
50  
75  
100 125  
0
2
4
6
8
10  
Ambient temperature TA ( °C )  
Collector-emitter voltage VCE ( V )  
Collector-emitter Saturation  
Voltage vs. Ambient Temperature  
Current Transfer Ratio vs. Forward Current  
320  
0.28  
0.24  
280  
240  
I = ±5mA  
IFC = 1mA  
0.20  
0.16  
200  
160  
0.12  
0.08  
120  
80  
V
= 5V  
TACE= 25°C  
0.04  
0
40  
0
1
2
5
10  
20  
50  
-30  
0
25  
50  
75  
100  
Forward current IF (±mA)  
Ambient temperature TA ( °C )  
DB92398m-AAS/A6  
14/5/03  

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