TLP321X [ISOCOM]

Transistor Output Optocoupler;


型号：	TLP321X
厂家：	ISOCOM COMPONENTS
描述：	Transistor Output Optocoupler 晶体光电晶体管光电晶体管输出元件
文件：	总3页 (文件大小：74K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

TLP321, TLP321-2, TLP321-4

HIGH DENSITY MOUNTING

PHOTOTRANSISTOR

OPTICALLY COUPLED ISOLATORS

APPROVALS

TLP321

Dimensions in mm

2.54

UL recognised, File No. E91231

DESCRIPTION

7.0

6.0

The TLP321, TLP321-2 , TLP321-4 series of

optically coupled isolators consist of infrared

light emitting diodes and NPN silicon photo

transistors in space efficient dual in line plastic

packages.

1.2

3.0

5.08

4.08

7.62

4.0

3.0

FEATURES

13°

Max

Options :-

0.5

10mm lead spread - add G after part no.

Surface mount - add SM after part no.

Tape&reel - add SMT&R after part no.

High Current Transfer Ratio ( 50% min)

High Isolation Voltage (5.3kV_RMS,7.5kV_PK

High BV_CEO( 80Vmin )

0.26

3.35

0.5

TLP321-2

2.54

)

All electrical parameters 100% tested

Custom electrical selections available

7.0

6.0

APPLICATIONS

Computer terminals

Industrial systems controllers

Measuring instruments

Signal transmission between systems of

different potentials and impedances

1.2

3.0

10.16

9.16

7.62

4.0

3.0

13°

Max

0.5

0.26

3.35

0.5

TLP321-4

2.54

7.0

6.0

OPTION SM

SURFACEMOUNT

OPTION G

7.62

1.2

20.32

19.32

7.62

4.0

3.0

0.6

0.1

13°

Max

1.25

0.75

0.5

0.26

10.46

9.86

10.16

0.26

3.35

3.0

0.5

ISOCOM COMPONENTS LTD

Unit 25B, Park View Road West,

Park View Industrial Estate, Brenda Road

Hartlepool, Cleveland, TS25 1YD

Tel: (01429) 863609 Fax :(01429) 863581

7/12/00

DB92545m-AAS/A1

ABSOLUTE MAXIMUM RATINGS

(25°C unless otherwise specified)

Storage Temperature

Operating Temperature

-55°C to + 125°C

-55°C to + 100°C

Lead Soldering Temperature

(1/16 inch (1.6mm) from case for 10 secs) 260°C

INPUT DIODE

Forward Current

Reverse Voltage

Power Dissipation

50mA

70mW

OUTPUT TRANSISTOR

Collector-emitter Voltage BV_CEO

Emitter-collector Voltage BV_ECO

Power Dissipation

80V

150mW

POWER DISSIPATION

Total Power Dissipation

200mW

(derate linearly 2.67mW/°C above 25°C)

ELECTRICAL CHARACTERISTICS ( T_A= 25°C Unless otherwise noted )

PARAMETER

MIN TYP MAX UNITS

TEST CONDITION

Input

Forward Voltage (V_F)

Reverse Voltage (V_R)

Reverse Current (I_R)

1.0

1.15 1.3

µA

I_F= 10mA

I_R= 10µA

V_R= 5V

Output

Collector-emitter Breakdown (BV

)

I_C= 0.5mA

( No^Cte^EO2 )

Emitter-collector Breakdown (BV_ECO

Collector-emitter Dark Current (I_CEO

)

I_E= 100µA

V_CE= 48V

100 nA

Coupled Current Transfer Ratio (CTR) (Note 2)

TLP321, TLP321-2, TLP321-4

600

V_RMS

V_PK

5mA I_F, 5V V_CE

CTR selection available

100

200

1mA I_F, 0.4V V_CE

8mA I_F, 2.4mA I_C

1mA I_F, 0.2mA I_C

See note 1

Collector-emitter Saturation VoltageV_{CE (SAT)}

Input to Output Isolation Voltage V_ISO5300

7500

0.4

Input-output Isolation Resistance R_ISO5x10¹⁰

Ω

V_IO= 500V (note 1)

V_CC= 10V ,

I_C= 2mA, R_L= 100Ω

Rise Time

µs

Fall Time

Turn-on Time

Turn-off Time

ton

toff

Note 1

Note 2

Measured with input leads shorted together and output leads shorted together.

Special Selections are available on request. Please consult the factory.

7/12/00

DB92545m-AAS/A1

Collector Power Dissipation vs. Ambient Temperature

Collector Current vs. Low

Collector-emitter Voltage

200

T_A= 25°C

150

100

I_F= 2mA

0.2

0.4

0.6

0.8

1.0

-30

100 125

Ambient temperature T_A( °C )

Collector-emitter voltage V_CE( V )

Forward Current vs. Ambient Temperature

Collector Current vs. Collector-emitter Voltage

T_A= 25°C

I_F= 5mA

-30

100 125

Ambient temperature T_A( °C )

Collector-emitter voltage V_CE( V )

Collector-emitter Saturation

Voltage vs. Ambient Temperature

Current Transfer Ratio vs. Forward Current

320

0.28

0.24

280

240

I = 5mA

I^F_C= 1mA

0.20

0.16

200

160

0.12

0.08

120

= 5V

T_A^CE= 25°C

0.04

-30

100

Forward current I_F(mA)

Ambient temperature T_A( °C )

DB92545m-AAS/A1

7/12/00

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