TLP521-4X-SMT&R [ISOCOM]
Optocoupler - Transistor Output, 4 CHANNEL TRANSISTOR OUTPUT OPTOCOUPLER, SURFACE MOUNT, PLASTIC, DIP-16;型号: | TLP521-4X-SMT&R |
厂家: | ISOCOM COMPONENTS |
描述: | Optocoupler - Transistor Output, 4 CHANNEL TRANSISTOR OUTPUT OPTOCOUPLER, SURFACE MOUNT, PLASTIC, DIP-16 输出元件 光电 |
文件: | 总3页 (文件大小:93K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
TLP521GB, TLP521-2GB, TLP521-4GB, TLP521, TLP521-2, TLP521-4
TLP521XGB, TLP521-2XGB, TLP521-4XGB
TLP521X, TLP521-2X, TLP521-4X
HIGH DENSITY MOUNTING
PHOTOTRANSISTOR
OPTICALLY COUPLED ISOLATORS
APPROVALS
Dimensions in mm
2.54
TLP521
l
ULrecognised,FileNo.E91231
1
2
4
3
7.0
6.0
'X'SPECIFICATIONAPPROVALS
l
VDE0884in3availableleadform:-
-STD
-Gform
1.2
3.0
-SMDapprovedtoCECC00802
5.08
4.08
7.62
l
BSI approved - Certificate No. 8001
4.0
3.0
13°
Max
DESCRIPTION
0.5
TheTLP521,TLP521-2,TLP521-4seriesof
optically coupled isolators consist of infrared
light emitting diodes and NPN silicon photo
transistors in space efficient dual in line plastic
packages.
0.26
3.35
TLP521-2
0.5
2.54
1
8
7
6
5
2
3
7.0
6.0
FEATURES
l
Options :-
4
10mm lead spread - add G after part no.
Surface mount - add SM after part no.
Tape&reel - add SMT&R after part no.
High Current Transfer Ratio ( 50% min)
High Isolation Voltage (5.3kVRMS ,7.5kVPK
High BVCEO ( 55Vmin )
1.2
3.0
10.16
9.16
7.62
4.0
3.0
l
l
l
l
l
)
13°
0.5
Max
All electrical parameters 100% tested
Custom electrical selections available
0.26
3.35
0.5
1
2
3
4
16
15
14
APPLICATIONS
TLP521-4
l
l
l
l
Computerterminals
Industrial systems controllers
Measuring instruments
Signal transmission between systems of
different potentials and impedances
13
2.54
5
6
12
11
7.0
6.0
10
9
7
8
OPTION G
7.62
OPTION SM
SURFACE MOUNT
1.2
20.32
19.32
7.62
4.0
3.0
0.6
0.1
13°
Max
1.25
0.75
0.5
0.26
10.46
9.86
0.26
3.35
10.16
0.5
ISOCOM COMPONENTS LTD
Unit 25B, Park View Road West,
Park View Industrial Estate, Brenda Road
Hartlepool, Cleveland, TS25 1YD
Tel: (01429) 863609 Fax :(01429) 863581
7/4/03
DB92546m-AAS/A3
ABSOLUTE MAXIMUM RATINGS
(25°C unless otherwise specified)
Storage Temperature
OperatingTemperature
-55°C to + 125°C
-30°Cto+100°C
Lead Soldering Temperature
(1/16 inch (1.6mm) from case for 10 secs) 260°C
INPUT DIODE
Forward Current
Reverse Voltage
Power Dissipation
50mA
6V
70mW
OUTPUT TRANSISTOR
Collector-emitter Voltage BVCEO
Emitter-collector Voltage BVECO
Power Dissipation
55V
6V
150mW
POWER DISSIPATION
Total Power Dissipation
200mW
(derate linearly 2.67mW/°C above 25°C)
ELECTRICAL CHARACTERISTICS ( TA = 25°C Unless otherwise noted )
PARAMETER
MIN TYP MAX UNITS
TEST CONDITION
Input
Forward Voltage (VF)
1.0
1.15 1.3
10
V
IF = 10mA
Reverse Current (IR)
µA
V
VR =4V
Output
Collector-emitter Breakdown (BV
)
55
6
IC = 0.5mA
( NoCteEO2 )
Emitter-collector Breakdown (BVECO
)
V
IE = 100µA
Collector-emitterDarkCurrent(ICEO
)
100 nA
VCE =20V
Coupled Current Transfer Ratio (CTR) (Note 2)
TLP521, TLP521-2, TLP521-4
50
600
600
600
%
%
%
%
5mA IF , 5V VCE
CTR selection available
BL
GB
GB
200
100
30
1mA IF , 0.4V VCE
Collector-emitter Saturation VoltageVCE (SAT)
-GB
0.4
0.4
V
V
8mA IF , 2.4mA IC
1mA IF , 0.2mA IC
Input to Output Isolation Voltage VISO
5300
7500
VRMS
VPK
Ω
µs
µs
See note 1
See note 1
VIO=500V(note1)
VCE =2V,
IC =2mA, RL =100Ω
Input-output Isolation Resistance RISO 5x1010
Response Time (Rise), tr
Response Time(Fall), tf
4
3
Note 1
Note 2
Measured with input leads shorted together and output leads shorted together.
Special Selections are available on request. Please consult the factory.
7/4/03
DB92546m-AAS/A3
Collector Power Dissipation vs. Ambient Temperature
Collector Current vs. Low
Collector-emitter Voltage
200
TA = 25°C
25
20
15
50
150
100
40
30
20
10
5
10
50
0
5
0
IF = 2mA
0
0.2
0.4
0.6
0.8
1.0
-30
0
25
50
75
100 125
Ambient temperature TA ( °C )
Collector-emitter voltage VCE ( V )
Forward Current vs. Ambient Temperature
Collector Current vs. Collector-emitter Voltage
60
50
50
TA = 25°C
50
30
20
40
30
40
30
15
10
20
20
10
0
10
IF = 5mA
0
-30
0
25
50
75
100 125
0
2
4
6
8
10
Ambient temperature TA ( °C )
Collector-emitter voltage VCE ( V )
Collector-emitter Saturation
Voltage vs. Ambient Temperature
Current Transfer Ratio vs. Forward Current
320
0.28
0.24
280
240
I = 5mA
IFC = 1mA
0.20
0.16
200
160
0.12
0.08
120
80
V
= 5V
TACE= 25°C
0.04
0
40
0
1
2
5
10
20
50
-30
0
25
50
75
100
Forward current IF (mA)
Ambient temperature TA ( °C )
DB92546m-AAS/A3
7/4/03
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