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TLP620-4X [ISOCOM]

HIGH DENSITY A.C. INPUT PHOTOTRANSISTOR OPTICALLY COUPLED ISOLATORS; 高密度AC输入光电晶体管光耦合隔离器
TLP620-4X
型号： TLP620-4X
厂家： ISOCOM COMPONENTS    ISOCOM COMPONENTS
描述：

HIGH DENSITY A.C. INPUT PHOTOTRANSISTOR OPTICALLY COUPLED ISOLATORS
高密度AC输入光电晶体管光耦合隔离器

晶体 光电 晶体管 光电晶体管 输出元件 输入元件
文件： 总3页 (文件大小：75K)
中文：  中文翻译
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TLP620X, TLP620-2X, TLP620-4X  
TLP620, TLP620-2, TLP620-4  
HIGH DENSITY A.C. INPUT  
PHOTOTRANSISTOR OPTICALLY  
COUPLED ISOLATORS  
APPROVALS  
TLP620  
Dimensions in mm  
2.54  
l
ULrecognised,FileNo.E91231  
7.0  
6.0  
1
2
4
3
'X'SPECIFICATIONAPPROVALS  
l
VDE0884in3availableleadforms:-  
-STD  
-Gform  
1.2  
-SMDapprovedtoCECC00802  
7.62  
5.08  
4.08  
4.0  
3.0  
DESCRIPTION  
The TLP620, TLP620-2, TLP620-4 series of  
optically coupled isolators consist of two  
infrared light emitting diodes connected in  
inverse parallel and NPN silicon photo  
transistors in space efficient dual in line plastic  
packages.  
13°  
Max  
0.5  
3.0  
0.26  
3.35  
0.5  
2.54  
TLP620-2  
1
2
8
7
7.0  
6.0  
FEATURES  
3
4
6
5
l
Options :-  
10mm lead spread - add G after part no.  
Surface mount - add SM after part no.  
Tape&reel - add SMT&R after part no.  
High Isolation Voltage (5.3kVRMS ,7.5kVPK  
AC or polarity insensitive input  
All electrical parameters 100% tested  
Custom electrical selections available  
1.2  
10.16  
9.16  
7.62  
0.26  
4.0  
3.0  
l
l
l
l
)
13°  
Max  
0.5  
3.0  
3.35  
0.5  
APPLICATIONS  
1
2
3
4
16  
15  
l
l
l
l
Computer terminals  
Industrial systems controllers  
Telephone sets, Telephone exchangers  
Signal transmission between systems of  
different potentials and impedances  
TLP620-4  
14  
13  
2.54  
5
6
7
8
12  
11  
10  
9
7.0  
6.0  
OPTION G  
OPTION SM  
SURFACEMOUNT  
7.62  
1.2  
20.32  
19.32  
7.62  
4.0  
3.0  
0.6  
0.1  
13°  
Max  
1.25  
0.75  
0.5  
0.26  
10.46  
9.86  
10.16  
0.26  
3.35  
3.0  
0.5  
ISOCOM COMPONENTS LTD  
Unit 25B, Park View Road West,  
Park View Industrial Estate, Brenda Road  
Hartlepool, Cleveland, TS25 1YD  
Tel: (01429) 863609 Fax :(01429) 863581  
7/12/00  
DB92548m-AAS/A1  
ABSOLUTE MAXIMUM RATINGS  
(25°C unless otherwise specified)  
Storage Temperature  
Operating Temperature  
Lead Soldering Temperature  
-55°C to + 125°C  
-55°C to + 100°C  
(1/16 inch (1.6mm) from case for 10 secs) 260°C  
INPUT DIODE  
Forward Current  
Power Dissipation  
± 50mA  
70mW  
OUTPUT TRANSISTOR  
Collector-emitter Voltage BVCEO  
Emitter-collector Voltage BVECO  
Power Dissipation  
55V  
6V  
150mW  
POWER DISSIPATION  
Total Power Dissipation  
200mW  
(derate linearly 2.67mW/°C above 25°C)  
ELECTRICAL CHARACTERISTICS ( TA = 25°C Unless otherwise noted )  
PARAMETER  
MIN TYP MAX UNITS  
TEST CONDITION  
Input  
Forward Voltage (VF)  
1.0  
1.15 1.3  
V
IF = ± 10mA  
Output  
Collector-emitter Breakdown (BVCEO  
( Note 2 )  
)
55  
6
V
V
IC = 0.5mA  
Emitter-collector Breakdown (BVECO  
Collector-emitter Dark Current (ICEO  
)
IE = 100µA  
VCE = 20V  
)
100 nA  
Coupled Current Transfer Ratio (CTR) (Note 2)  
TLP620, TLP620-2, TLP620-4  
50  
600  
600  
%
± 5mAIF , 5V VCE  
CTR selection available  
GB  
100  
30  
%
%
± 5mAIF , 5V VCE  
± 1mAIF , 0.4V VCE  
Collector-emitter Saturation VoltageVCE (SAT)  
GB  
Input to Output Isolation Voltage VISO 5300  
7500  
Input-output Isolation Resistance RISO 5x1010  
0.4  
0.4  
V
V
VRMS  
VPK  
Ω
± 8mAIF , 2.4mAIC  
± 1mAIF , 0.2mAIC  
See note 1  
See note 1  
VIO = 500V (note 1)  
Rise Time  
Fall Time  
tr  
tf  
2
3
µs  
µs  
VCC = 10V ,  
IC= 2mA, RL= 100Ω  
Turn-on Time  
Turn-off Time  
ton  
toff  
3
3
µs  
µs  
Note 1  
Note 2  
Measured with input leads shorted together and output leads shorted together.  
Special Selections are available on request. Please consult the factory.  
7/12/00  
DB92548m-AAS/A1  
Collector Current vs. Low  
Collector-emitter Voltage  
Collector Power Dissipation vs. Ambient Temperature  
200  
TA = 25°C  
25  
20  
15  
±50  
150  
100  
±40  
±30  
±20  
±10  
10  
50  
0
±5  
5
0
IF = ±2mA  
0
0.2  
0.4  
0.6  
0.8  
1.0  
-30  
0
25  
50  
75  
100 125  
Collector-emitter voltage VCE ( V )  
Ambient temperature TA ( °C )  
Forward Current vs. Ambient Temperature  
Collector Current vs. Collector-emitter Voltage  
60  
50  
TA = 25°C  
50  
±50  
40  
30  
±30  
40  
30  
±20  
±15  
20  
20  
10  
0
±10  
10  
IF = ±5mA  
0
-30  
0
25  
50  
75  
100 125  
0
2
4
6
8
10  
Ambient temperature TA ( °C )  
Collector-emitter voltage VCE ( V )  
Collector-emitter Saturation  
Voltage vs. Ambient Temperature  
Current Transfer Ratio vs. Forward Current  
320  
0.28  
0.24  
280  
240  
I = ±5mA  
IFC = 1mA  
0.20  
0.16  
200  
160  
0.12  
0.08  
120  
80  
V
= 5V  
TACE= 25°C  
0.04  
0
40  
0
1
2
5
10  
20  
50  
-30  
0
25  
50  
75  
100  
Forward current IF (±mA)  
Ambient temperature TA ( °C )  
DB92548m-AAS/A1  
7/12/00  

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