IS43R32400A-6B [ISSI]
4Meg x 32 128-MBIT DDR SDRAM; 4Meg ×32 128兆位的DDR SDRAM
| 型号： | IS43R32400A-6B |
| 厂家： | 
INTEGRATED SILICON SOLUTION, INC |
| 描述： | 4Meg x 32 128-MBIT DDR SDRAM |
| 文件： | 总25页 (文件大小：1286K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
®
IS43R32400A
ISSI
PRELIMINARY INFORMATION
FEBRUARY 2006
4Meg x 32
128-MBIT DDR SDRAM
FEATURES
DEVICE OVERVIEW
ISSI’s 128-Mbit DDR SDRAM achieves high-speed
data transfer using pipeline architecture and two data
word accesses per clock cycle. The 134,217,728-bit
memory array is internally organized as four banks of
32M-bit to allow concurrent operations. The pipeline
allows Read and Write burst accesses to be virtually
continuous, with the option to concatenate or truncate
the bursts. The programmable features of burst
length, burst sequence and CAS latency enable
further advantages. The device is available in 32-bit
data word size. Input data is registered on the I/O pins
on both edges of Data Strobe signal(s), while output
data is referenced to both edges of Data Strobe and
both edges of CLK. Commands are registered on the
positive edges of CLK. Auto Refresh, Active Power
Down, and Pre-charge Power Down modes are
enabled by using clock enable (CKE) and other inputs
in an industry-standard sequence. All input and
output voltage levels are compatible with SSTL 2.
• Clock Frequency: 200, 166, 100 MHz
• Power supply (VDD and VDDQ): 2.5V
• SSTL 2 interface
• Four internal banks to hide row Pre-charge
and Active operations
• Commands and addresses register on positive
clock edges (CLK)
• Bi-directional Data Strobe signal for data cap-
ture
• Differential clock inputs (CLK and CLK) for
two data accesses per clock cycle
• Data Mask feature for Writes supported
• DLL aligns data I/O and Data Strobe transitions
with clock inputs
• Half-strength and Matched drive strength
options
IS43R32400A
1M x32x4 Banks
VDD: 2.5V
• Programmable burst length for Read and Write
operations
• Programmable CAS Latency (3, 4, 5 clocks)
VDDQ: 2.5V
• Programmable burst sequence: sequential or
144-ballBGA
interleaved
• Burst concatenation and truncation supported
for maximum data throughput
KEY TIMING PARAMETERS
• Auto Pre-charge option for each Read or Write
burst
Parameter
-5
-6
Unit
CLK Cycle Time (min.)
CAS Latency = 5
• 4096 refresh cycles every 32ms
• Auto Refresh and Self Refresh Modes
5
5
5
6
6
6
ns
ns
ns
CAS Latency = 4
• Pre-charge Power Down and Active Power
CAS Latency = 3
Down Modes
CLK Frequency (max.)
CAS Latency = 5
• Industrial Temperature Availability
• Lead-free Availability
200
200
200
166
166
166
MHz
MHz
MHz
CAS Latency = 4
CAS Latency = 3
Copyright © 2006 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time
without notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised to
obtain the latest version of this device specification before relying on any published information and before placing orders for products.
Integrated Silicon Solution, Inc. — 1-800-379-4774
1
Rev. 00D
02/15/06
®
IS43R32400A
ISSI
FUNCTIONAL BLOCK DIAGRAM (X32)
CLK
CLK
CKE
CS
RAS
CAS
COMMAND
DECODER
DM0-DM3
4
DATA IN
BUFFER
&
CLOCK
GENERATOR
32
32
I/O 0-31
REFRESH
CONTROLLER
DQS0-DQS3
WE
MODE
4
REGISTER
V
DD/VDDQ
ss/Vss
SELF
DATA OUT
BUFFER
REFRESH
V
Q
A11
A10
CONTROLLER
14
32
32
A9
A8
A7
A6
A5
A4
A3
A2
A1
A0
REFRESH
COUNTER
2
4096
4096
12
MEMORY CELL
ARRAY
4096
4096
12
BANK 0
ROW
ROW
ADDRESS
BUFFER
12
BA0
ADDRESS
BA1
LATCH
12
14
SENSE AMP I/O GATE
256
(x 32)
COLUMN
ADDRESS LATCH
BANK CONTROL LOGIC
8
BURST COUNTER
COLUMN DECODER
COLUMN
ADDRESS BUFFER
8
2
Integrated Silicon Solution, Inc. — 1-800-379-4774
Rev. 00D
02/15/06
®
IS43R32400A
ISSI
PIN CONFIGURATION
PACKAGE CODE: B 144-BALL FBGA (Top View)
(12.00 mm x 12.00 mm Body, 0.8 mm Ball Pitch)
1 2 3 4 5 6 7 8 9 10 11 12
A
B
C
D
E
F
DQS0 DM0 VSSQ DQ3 DQ2 DQ0 DQ31 DQ29 DQ28 VSSQ DM3 DQS3
DQ4 VDDQ NC VDDQ DQ1 VDDQ VDDQ DQ30 VDDQ NC VDDQ DQ27
DQ6 DQ5 VSSQ VSSQ VSSQ VDD VDD VSSQ VSSQ VSSQ DQ26 DQ25
DQ7 VDDQ VDD VSS VSSQ VSS VSS VSSQ VSS VDD VDDQ DQ24
DQ17 DQ16 VDDQ VSSQ VSS VSS VSS VSS VSSQ VDDQ DQ15 DQ14
DQ19 DQ18 VDDQ VSSQ VSS VSS VSS VSS VSSQ VDDQ DQ13 DQ12
G
H
J
DQS2 DM2
NC VSSQ VSS VSS VSS VSS VSSQ NC
DM1 DQS1
DQ21 DQ20 VDDQ VSSQ VSS VSS VSS VSS VSSQ VDDQ DQ11 DQ10
DQ22 DQ23 VDDQ VSSQ VSS VSS VSS VSS VSSQ VDDQ DQ9 DQ8
K
L
CAS
RAS
CS
WE VDD VSS A10 VDD VDD
NC VSS VDD
NC
NC
NC
NC
NC
NC
BA1
A0
A2
A1
A11
A3
A9
A5
A6
NC
A7
CK
A8
CK
M
BA0
A4
CKE VREF
Note: Vss balls inside the dotted box are optional for purposes of thermal dissipation.
Integrated Silicon Solution, Inc. — 1-800-379-4774
3
Rev. 00D
02/15/06
®
IS43R32400A
ISSI
PIN FUNCTIONS
Symbol
A0-A11
Type
Input Pin
Function (In Detail)
Address inputs are sampled during several commands. During an Active
command, A0-A11 select a row to open. During a Read or Write command,
A0-A7 select a starting column for a burst. During a Pre-charge command,
A8 determines whether all banks are to be pre-charged, or a single bank.
During a Load Mode Register command, the address inputs select an
operating mode.
BA0, BA1
Input Pin
Bank Address inputs are used to select a bank during Active, Pre-charge,
Read, or Write commands. During a Load Mode Register command, BA0
and BA1 are used to select between the Base or Extended Mode Register
CAS
Input Pin
Input Pin
CAS is Column Access Strobe, which is an input to the device command
along with RAS and WE. See “Command Truth Table” for details.
CKE
Clock Enable: CKE High activates and CKE Low de-activates internal clock
signals and input/output buffers. When CKE goes Low, it can allow Self
Refresh, Pre-charge Power Down, and Active Power Down. CKE must be
High during entire Read and Write accesses. Input buffers except CLK,
CLK, and CKE are disabled during Power Down. CKE uses an SSTL 2
input, but will detect a LVCMOS Low level after VDD is applied.
CLK, CLK
CS
Input Pin
Input Pin
Input Pin
All address and command inputs are sampled on the rising edge of the
clock input CLK and the falling edge of the differential clock input CLK.
Output data is referenced from the crossings of CLK and CLK.
The Chip Select input enables the Command Decoding block of the device.
When CS is disabled, a NOP occurs. See “Command Truth Table” for
details. Multiple DDR SDRAM devices can be managed with CS.
These are the Data Mask inputs. During a Write operation, the Data Mask
input allows masking of the data bus. DM is sampled on each edge of DQS.
There are four Data Mask input pins for the x32 DDR SDRAM. Each input
applies to DQ0-DQ7, DQ8-DQ15, DQ16-DQ23, or DQ24-DQ31.
DM0-DM3
DQS0-DQS3 Input/Output Pin
These are the Data Strobe inputs. The Data Strobe is used for data capture.
During a Read operation, the DQS output signal from the device is edge-
aligned with valid data on the data bus. During a Write operation, the DQS
input should be issued to the DDR SDRAM device when the input values on
DQ inputs are stable. There are four Data Strobe pins for the x32 DDR
SDRAM. Each of the four Data Strobe pins applies to DQ0-DQ7, DQ8-
DQ15, DQ16-DQ23, or DQ24-DQ31.
DQ0-DQ31
Input/Output Pin
The pins DQ0 to DQ31 represent the data bus. For Write operations, the
data bus is sampled on Data Strobe. For Read operations, the data bus is
sampled on the crossings of CK and CK.
NC
—
No Connect: This pin should be left floating. These pins could be used for
256Mbit or higher density DDR SDRAM.
RAS
WE
Input Pin
Input Pin
RAS is Row Access Strobe, which is an input to the device command
along with CAS and WE. See “Command Truth Table” for details.
WE is Write Enable, which is an input to the device command along with
RAS and CAS. See “Command Truth Table” for details.
VDDQ
VDD
VREF
VSSQ
VSS
Power Supply Pin
Power Supply Pin
Power Supply Pin
Power Supply Pin
Power Supply Pin
VDDQ is the output buffer power supply.
VDD is the device power supply.
VREF is the reference voltage for SSTL 2.
VSSQ is the output buffer ground.
VSS is the device ground.
4
Integrated Silicon Solution, Inc. — 1-800-379-4774
Rev. 00D
02/15/06
®
IS43R32400A
ISSI
COMMAND TRUTH TABLE
Function
CKE (n - 1) CKE (n)
CS
H
L
RAS
x
CAS
x
WE
x
BA1
x
BA0 Address
Device Deselect (NOP)
No Operation (NOP)
Burst Stop(2)
Read(3)
Write(3)
H
H
H
H
H
H
H
H
H
H
H
L
x
x
H
x
x
x
x
x
x
x
x
x
x
x
x
x
H
H
H
H
L
H
H
L
H
L
x
L
x
x
x
L
H
L
V
V
V
V
x
V
V
V
V
x
V
V
V
x
L
L
Bank and Row Activate
Pre-charge select bank
Pre-charge all banks
Load Mode Register (Base)
Load Extended Mode Register
Auto Refresh
L
H
H
H
L
H
L
L
L
L
L
L
x
L
L
L
L
L
H
x
V
V
x
L
L
L
L
L
L
L
L
H
H
x
Self Refresh
L
L
L
x
x
x
Notes:
1. H = VIH, L = VIL, x = VIH or VIL, V = Valid Data.
2. This command only applies to Read command with Auto Pre-charge disabled.
3. Auto Pre-charge is enabled with A8 = H (x32).
DATA MASK TRUTH TABLE
Function
CKE (n - 1) CKE (n)
DM0
DM1
DM2
DM3
Write Enable for Data Byte DQ0-DQ7
Write Disable for Data Byte DQ0-DQ7
Write Enable for Data Byte DQ8-DQ15
Write Disable for Data Byte DQ8-DQ15
Write Enable for Data Byte DQ16-DQ23
Write Disable for Data Byte DQ16-DQ23
Write Enable for Data Byte DQ24-DQ31
Write Disable for Data Byte DQ24-DQ31
H
H
H
H
H
H
H
H
x
x
x
x
x
x
x
x
L
H
x
x
x
x
x
x
x
x
L
H
x
x
x
x
x
x
x
x
L
H
x
x
x
x
x
x
x
x
L
H
Notes:
1. H = VIH, L = VIL, x = VIH or VIL, V = Valid Data.
Integrated Silicon Solution, Inc. — 1-800-379-4774
5
Rev. 00D
02/15/06
®
IS43R32400A
ISSI
DETAILED COMMAND TRUTH TABLE - SAME BANKS
Function (n)
Command (n)
Prior State (n - 1) CKE (n - 1) CKE (n) CS RAS CAS WE
NOP or Continue
previous operation
NOP or Continue
previous operation
Activate row
Deselect
Any
H
H
H
X
X
X
NOP
Any
H
H
L
H
H
H
Active
Idle
Idle
Idle
H
H
H
H
H
H
L
L
L
L
L
L
H
L
L
H
H
L
Issue Auto Refresh
Load the Base/
Auto Refresh
Load Mode Register
Extended Mode Register
Start Read Burst
Read
Row active
H
H
H
H
H
H
H
H
H
H
H
H
H
H
L
L
L
L
L
L
L
H
H
H
H
H
H
L
L
L
L
L
L
L
H
H
H
H
L
Read
Read underway
Write underway
Row active
Read
Start Write Burst
Write
Write(1)
Read underway
Write underway
Row active
L
Write
L
De-activate Row,
start Pre-charge
Pre-charge
L
Truncate Read Burst,
start Pre-charge
Pre-charge
Read underway
Write underway
Read underway
H
H
H
H
H
H
L
L
L
L
L
H
H
H
L
L
L
Truncate Write Burst,
start Pre-charge
Pre-charge
Terminate Read Burst
Burst Terminate
H
Note:
1. A Write command may be terminated only at the completion of the Read burst. However, a Burst Terminate can be transmitted
to end the Read burst early so that a Write command can be asserted.
6
Integrated Silicon Solution, Inc. — 1-800-379-4774
Rev. 00D
02/15/06
®
IS43R32400A
ISSI
DETAILED COMMAND TRUTH TABLE - DIFFERENT BANKS (bank b, then bank g)
Function (n)
Command (n)
Prior State (n - 1) CKE (n - 1) CKE (n) CS RAS CAS WE
NOP or Continue
previous operation
NOP or Continue
previous operation
Issue any command to
bank g otherwise valid
Start Read Burst in
bank g
Deselect
Any
Any
Idle
H
H
H
H
H
H
H
H
H
X
H
X
H
X
H
X
L
X
H
X
H
NOP
L
Any command
Read
X
L
Row in bank b
active, activating,
or pre-charging
Read
Read
Read
Read
Write
Read underway in
bank b (Auto Pre-
charge disabled)
Write underway in
bank b (Auto Pre-
charge disabled)
Read underway in
bank b (Auto Pre-
charge enabled)
Write underway in
bank b (Auto Pre-
charge enabled)
Row in bank b active,
activating, or
H
H
H
H
H
H
H
H
H
H
H
H
H
H
H
H
H
H
L
L
L
L
L
L
L
L
L
H
H
H
H
H
H
H
H
H
L
L
L
L
L
L
L
L
L
H
H
H
H
L
Start Write Burst in bank g
pre-charging
Write(1)
Write
Read underway in
bank b (Auto Pre-
charge disabled)
Write underway in
bank b (Auto Pre-
charge disabled)
Read underway in
bank b (Auto Pre-
charge enabled)
Write underway in
bank b (Auto Pre-
charge enabled)
L
L
Write(1)
Write
L
L
Integrated Silicon Solution, Inc. — 1-800-379-4774
7
Rev. 00D
02/15/06
®
IS43R32400A
ISSI
DETAILED COMMAND TRUTH TABLE - DIFFERENT BANKS (bank b, then bank g) -cont.
Function (n)
Command (n)
Prior State (n - 1) CKE (n - 1) CKE (n) CS RAS CAS WE
Start Pre-charge
Pre-charge
Row in bank b active,
activating, or
pre-charging
H
H
H
H
H
H
H
H
H
H
L
L
L
L
L
L
L
L
L
L
H
H
H
H
H
L
L
L
L
L
Pre-charge
Pre-charge
Pre-charge
Pre-charge
Read underway in
bank b (Auto Pre-
charge disabled)
Write underway in
bank b (Auto Pre-
charge disabled)
Read underway in
bank b (Auto Pre-
charge enabled)
Write underway in
bank b (Auto Pre-
charge enabled)
Note:
1. A Write command may be terminated only at the completion of the Read burst. However, a Burst Terminate can be transmitted
to end the Read burst early so that a Write command can be asserted.
DETAILED COMMAND TRUTH TABLE - LOW POWER MODES
Function (n)
Command (n)
Prior State (n - 1) CKE (n - 1) CKE (n) CS
RAS CAS WE
Maintain Power Down don’t care
Power Down Mode
Self Refresh Mode
L
L
L
L
H
L
L
H
H
L
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
Maintain Self Refresh
Exit Power Down
don’t care
Deselect or NOP Power Down
Exit Self Refresh Mode Deselect or NOP Self Refresh Mode
Enter Pre-Charge
Power Down Mode
Enter Active Power
Down Mode
Deselect or NOP All Banks Idle
Deselect or NOP Bank(s) Active
H
H
L
L
X
L
X
L
X
L
X
H
Enter Self Refresh
Mode
Auto Refresh
All Banks Idle
8
Integrated Silicon Solution, Inc. — 1-800-379-4774
Rev. 00D
02/15/06
®
IS43R32400A
ISSI
ABSOLUTE MAXIMUM RATINGS(1)
Symbol
Parameters
Rating
Unit
VDD MAX
VDDQ MAX
VIN, VREF
VOUT
Maximum Supply Voltage
–0.3 to +3.6
0.3 to +3.6
–0.3 to VDDQ + 0.3
–0.3 to VDDQ + 0.3
2
V
V
V
Maximum Supply Voltage for Output Buffer
Input Voltage, Reference Voltage
Output Voltage
Allowable Power Dissipation
Output Shorted Current
V
PD MAX
ICS
W
mA
°C
50
0 to +70
–40 to +85
TOPR
Operating Temperature
Com.
Ind.
TSTG
Storage Temperature
–55 to +150
°C
Notes:
1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the device. This
is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the
operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods
may affect reliability.
2. All voltages are referenced to Vss.
RECOMMENDED DC OPERATING CONDITIONS (SSTL_2 Input/Output, TA = 0oC to +70oC)
Symbol Parameter
Test Condition
Min
2.375
2.375
Typ.
2.500
2.500
VREF
—
Max
2.625
2.625
Unit
V
V
VDD
VDDQ
VTT
VIH
Supply Voltage
I/O Supply Voltage
I/O Termination Voltage
Input High Voltage
VREF - 0.04
VREF + 0.15
VSSQ - 0.3
0.49 x VDDQ
-5
VREF + 0.04
VDDQ + 0.3
VDDQ - 0.15
V
V
VIL
Input Low Voltage
—
V
VREF
IIL
I/O Reference Voltage
Input Leakage Current
0.5 x VDDQ 0.51 x VDDQ
V
µA
0
≤
VREF
≤
VDD, with all inputs
at VSS, except tested input
Output Leakage Current Output disabled;
0V
—
—
—
—
5
IOL
-5
VTT + 0.76
—
5
—
µA
V
≤
VOUT ≤ VDDQ
VOH
Output High Voltage
Level
IOH = -15.2mA
VOL
Output Low Voltage
Level
IOL = +15.2mA
VREF - 0.76
V
Note:
1. VDDQ must always be less than or equal to VDD.
CAPACITANCE CHARACTERISTICS (At TA = 0 to +25°C, VDD = VDDQ = 2.5V, f = 1 MHz)
Symbol
Parameter
Min.
Max.
Unit
CIN1
CIN2
CIN3
COUT
Input Capacitance: Address, B0, B1
Input Capacitance:All other input pins
Data Mask Input/Output Capacitance: DM0
4
3
6
6
5
5
8
8
pF
pF
pF
pF
-
DM3
Data Input/Output Capacitance: DQ and DQS
Integrated Silicon Solution, Inc. — 1-800-379-4774
9
Rev. 00D
02/15/06
®
IS43R32400A
ISSI
DC ELECTRICAL CHARACTERISTICS (VDD = 2.5V +/- 5%, TA = 0oC to +70oC)
SymbolParameter
Test Condition
Unit
IDD0
Operating Current
One bank operation; Active-Precharge; DQ, DM and DQS
inputs change once per clock cycle; Address and Control
inputs change once per two clock cycles; tRC = tRC (min);
tCK = tCK (min)
160 mA
IDD1
Operating Current
One bank operation; Active-Read-Precharge; BL = 4; CL = 4;
Address and Control inputs change once per clock cycle;
tRCDRD = 4 x tCK; tRC = tRC (min); tCK = tCK (min);
IOUT = 0mA;
240 mA
40 mA
IDD2P
IDD2N
Precharge Power-Down
Standby Current
All banks Idle; tCK = tCK (min); CKE = Low
Idle Standby Current
All banks idle; Address and control inputs change once per
clock cycle; CKE = High; CS = High (Deselect); VIN = VREF
for DQ, DQS, and DM; tCK = tCK (min)
80 mA
40 mA
IDD3P
IDD3N
Active Power-Down
Standby Current
One bank Active; CKE = Low; tCK = tCK (min)
Active Standby Current
One bank Active; CS = High; CKE = High; Address and
Control inputs change once per clock cycle; DQ, DQS, and
DM change twice per clock cycle; tRC = tRC (max);
tCK = tCK (min)
100 mA
420 mA
IDD4R
IDD4W
Operating Current
Burst Read
One bank Active; BL = 2; Address and Control inputs
change once per clock cycle; tCK = tCK (min); IOUT = 0mA
One bank Active; BL = 2; Address and Control inputs change
once per clock cycle; DQ, DQS, DM change twice per clock
cycle; tCK = tCK (min)
Operating Current
Burst Write
270 mA
280 mA
IDD5
IDD6
IDD7
Auto Refresh Current
Self Refresh Current
Operating Current
tRC = tRFC (min); tCK = tCK (min)
CKE
≤
0.2V; tCK = tCK (min)
3
mA
Four bank interleaved Reads with Auto Precharge; BL = 4;
Address and Controls inputs change per Read, Write, or
Active command; tRC = tRC (min); tCK = tCK (min)
550 mA
Notes:
1.Operating outside the “Absolute Maximum Ratings” may lead to temporary or permanent device failure.
2.Power up sequence describe in “Initialization” section.
3. All voltages are referenced to VSS.
10
Integrated Silicon Solution, Inc. — 1-800-379-4774
Rev. 00D
02/15/06
®
IS43R32400A
ISSI
AC ELECTRICAL CHARACTERISTICS (VDD = 2.5V +/- 5%, TA = 0oC to +70oC)
-5
-6
Min. Max.
Symbol Parameter
TestCondition
CL = 3
Min.
5
Max.
10
10
Unit
ns
tCK
Clock Cycle Time
6
6
10
10
CL = 4
5
ns
CL = 5
5
10
6
10
ns
tCH
Clock High Level Width
Clock Low Level Width
0.45
0.45
0.55
0.55
0.7
0.85
0.45
1.1
0.6
1.15
—
0.45
0.45
-0.7
-0.85
—
0.9
0.4
0.85
0
0.55
0.55
0.7
0.85
0.45
1.1
0.6
1.15
—
tCK
tCK
ns
tCL
tDQSCK
tAC
DQS-Out Access Time from CLK, CLK
Output Access Time from CLK, CLK
DQS-DQSkew
ReadPreamble
ReadPostamble
CLK to Valid DQS-In
DQS-In Setup Time
DQS-In Hold Time
DQS Write Post Postamble
DQS-In High Level Pulse Width
DQS-In Low Level Pulse Width
Address and Control Input Setup Time
DQ and DM Setup Time to DQS
DQ and DM Hold Time to DQS
Clock Half Period
Output DQS Valid Window
Row Cycle Time
Refresh Row Cycle Time
Row Active Time
-0.7
-0.85
—
0.9
0.4
0.85
0
0.35
0.4
0.4
0.4
0.9
0.5
ns
ns
tDQSQ
tRPRE
tRPST
tDQSS
tWPRES
tWPREH
tWPST
tDQSH
tDQSL
tIS
tCK
tCK
tCK
ns
—
0.35
0.4
0.4
0.4
0.9
0.5
0.7
tCH or tCL
tHP - 0.55
11
—
ns
0.6
0.6
0.6
—
—
—
—
—
—
—
0.6
0.6
0.6
—
—
—
—
—
—
—
tCK
tCK
tCK
ns
tDS
ns
ns
ns
ns
tDH
0.7
tHP
tCH or tCL
tQH
tHP - 0.5
tRC
12
14
8
tCK
tCK
tCK
tCK
tCK
tCK
tCK
tCK
tCK
tCK
tCK
tCK
tCK
ns
tRFC
12
7
tRAS
tRCDRD
tRCDWR
tRP
100K
—
120K
—
RAS to CAS Delay in Read
RAS to CAS Delay in Write
RowPre-chargeTime
Row Active to Row Active Delay
Write Recovery Time
Last Data-In to Read Command
Column Address to Column Address Delay
ModeRegisterLoadDelay
4
4
2
3
2
2
2
1
2
7
200
—
—
—
—
—
—
—
—
2
3
2
2
2
1
2
7
—
—
—
—
—
—
—
—
tRRD
tWR
tCDLR
tCCD
tMRD
tDAL
Auto Pre-charge Write Recovery + Pre-charge
Self Refresh Exit to Read Command Delay
Power Down Exit Time
tXSA
tPDEX
tREF
—
—
7.8
200
—
tIS + 2 x tCK
—
tIS + 2 x tCK —
Refresh Interval Time
—
7.8
µs
Notes:
1. Operating outside the “Absolute Maximum Ratings” may lead to temporary or permanent device failure.
2. Power up sequence describe in “Initialization” section.
3. All voltages are referenced to Vss.
Integrated Silicon Solution, Inc. — 1-800-379-4774
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Rev. 00D
02/15/06
®
IS43R32400A
ISSI
AC TEST CONDITIONS
OutputLoad
V
TT = 0.5 x VDDQ
25Ω
Z = 25Ω
Output
30 pF
VREF = 0.5 x VDDQ
AC TEST CONDITIONS
Parameter
Unit
Input Signal Levels
Input Signal Slew Rate
Input Timing Reference Level
Output Timing Measurement Reference Level
CLK and CLK Signal Maximum Peak Swing
Reference Level of Input/Ouput Signals
VREF + 0.4V / VREF - 0.4V
1V / ns
VREF
VTT
1.5V
0.5 x VDDQ
12
Integrated Silicon Solution, Inc. — 1-800-379-4774
Rev. 00D
02/15/06
®
IS43R32400A
ISSI
INITIALIZATION
FUNCTIONAL DESCRIPTION
The DDR SDRAM must be powered-on and initial-
The 128Mbit DDR SDRAM is a high-speed CMOS
device with four banks that operate at 2.5V. Each
32Mbit bank is organized as 4,096 rows of 256
columns for the x32 options. Pre-fetch architecture
allows Read and Write accesses to be double-data
rate and burst oriented. Accesses start at a selected
column location and continue every half-clock cycle
for a programmed number of times. The Read or
Write operation begins with an Active command to
transmit the selected bank and row (A0-A11 bits are
sampled). This is followed by a Read or Write
command to sample the address bits again to
determine the first column to access. When access
to the memory is not necessary, the device can be
put into a Power Down mode in which current con-
sumption is minimized. Prior to normal operation, the
device must be initialized in a defined procedure to
function properly. The following sections describe
the steps of initialization, the mode register defini-
ized in a series of defined steps for proper operation.
First, power is applied simultaneously to VDD and
VDDQ. After these reaching stable values, a VREF
is ramped up. If this sequence is not followed, latch-
up could occur and cause damage to the device.
The input CKE must be asserted and held to a
LVCMOS Low level during this time to prevent
unwanted commands from being executed. The
outputs I/O and DQS remain in high impedance until
driven during a normal operation. Once VDD, VDDQ,
VREF, and CKE are stable values, the clock inputs
can begin to be applied. For a time period of at least
200µs, valid CLK and CLK cycles must be applied
prior to any command being issued to the device.
CKE needs to then be raised to SSTL 2 logic High
and issue a NOP or Deselect command to initialize
the internal logic of the DRAM. Next, a Pre-charge
All command is given to the device, followed by a
NOP/Deselect command on each clock cycle for at
least tRP. The Load Extended Mode Register
should be issued to enable DLL, followed by another
series of NOP/Deselect commands for at least tMRD.
After this time, the Load Mode Register command
should be issued to reset the DLL, again followed by
a series of NOP or Deselect commands for at least
tMRD. (Note: whenever the DLL is reset, 200 clock
cycles must occur prior to any Read command.) The
Pre-charge command is then issued, with NOP/
Deselect commands for at least tRP. Next, two Auto-
Refresh commands are issued, each followed by
NOP/Deselect commands for at least tRFC. At this
point, the JEDEC specification recommends that a
DDR SDRAM receive another Load Mode Register
command to clear the DLL, with NOP/Deselect
commands for at least tMRD. The device is now
ready to receive a valid command for normal opera-
tions, command descriptions, and device operation.
tion.
Integrated Silicon Solution, Inc. — 1-800-379-4774
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Rev. 00D
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®
IS43R32400A
ISSI
loaded only if all banks are idle. After the Load
MODE REGISTER DEFINITION
Mode Register command, a minimum time of tMRD
must pass before the subsequent command is
issued.
The mode register allows configuration of the operat-
ing mode of the DDR SDRAM. This register is loaded
as a step in the normal initialization of the device.
The Load Mode Register command samples the
values on inputs A0-A11, BA0 (Low) and BA1 (Low)
and stores them as register values M0-M13. The
values in the register determine the burst length,
burst type, CAS latency timing, and DLL Reset/Clear.
It should be noted that some bit values are reserved
and should not be loaded into the register. The data
in the mode register is retained until it is re-loaded or
the DDR SDRAM loses its power (except for bit M8,
which is cleared automatically). The register can be
CAS LATENCY
After a Read command is issued to the device, a
latency of several clock cycles is necessary prior to
the validity of data on the data bus. Also known as
CAS Latency (CL), the value can be configured as 3,
4, or 5 depending on the bits M4-M6 loaded into the
register. Some CL values are not defined for certain
speed ratings, and if they are used, the device may
not function properly.
MODE REGISTER DEFINITION
Address Bus (Ax)
BA1 BA0 A11 A10 A9
A8
A7
A6
A5
A4
A3
A2
A1
A0
Mode Register (Mx)
Burst Length
M2 M1 M0
M3=0
M3=1
0
0
0
0
1
1
1
1
0
0
1
1
0
0
1
1
0
1
0
1
0
1
0
1
Reserved Reserved
2
4
8
2
4
8
Reserved Reserved
Reserved Reserved
Reserved Reserved
Full Page Reserved
Burst Type
M3
Type
0
1
Sequential
Interleaved
Latency Mode
M6 M5 M4
CAS Latency
0
0
0
0
1
1
1
1
0
0
1
1
0
0
1
1
0
1
0
1
0
1
0
1
Reserved
Reserved
Reserved
3
4
5
Reserved
Reserved
Operating Mode
M8 M7 M6-M0 Mode
0
0
Defined Standard Operation
1
0
Defined Standard Operation w/DLL Reset
—
—
—
All Other States Reserved
Operating Mode
M13 M12
M11
0
M10
0
M9
Mode
0
0
0
Standard operation
—
—
—
—
—
All Other States Reserved
14
Integrated Silicon Solution, Inc. — 1-800-379-4774
Rev. 00D
02/15/06
®
IS43R32400A
ISSI
BURST LENGTH
BURST TYPE
The highest access throughput of this device can be
achieved by using a burst of either Read or Write
accesses. The number of accesses in each burst
would be pre-configured to be 2, 4, 8, or full page as
shown in Mode Register Definition (bits M0-M2).
When a Read or Write command is given to the
device, the address bits A0-A7 (x32) select the block
of columns and the starting column for the subsequent
burst. The accesses in this burst can only reference
the selected block, and may wrap-around if a bound-
ary is reached. The Burst Definition table indicates
the relationship between the least significant address
bits and the starting column. The most significant
address bits can select any unique block of columns
in the currently activated row. (Note: Full page bursts
are possible only in Sequential Mode, with the starting
address even.)
Bursts can be made in either of two types: sequential
or interleaved. The burst type is programmed during a
Load Mode Register command (bit M3). During a
Read or Write burst, the order of accesses is deter-
mined by burst length, starting column, and burst type,
as indicated in the Burst Definition table.
DLL RESET/CLEAR
To cause a DLL reset, the bit M8 is set to 1 in the
Load Mode Register command. When the DLL is
reset, 200 clock cycles are required to occur prior to
any Read operation. To clear the DLL for normal
operation, the bit M8 is set to 0. This device does not
require it, but JEDEC specifications require that any
time that the DLL is reset, it later be cleared prior for
normal operation.
BURST DEFINITION
Burst
Starting Column
Address
Order of Accesses in a Burst
Length
Sequential
Interleaved
A2
A1
A0
2
4
0
1
0
1
0
1
0
1
0-1
0-1
1-0
1-0
0
0
1
1
0
0
1
1
0
0
1
1
0-1-2-3
0-1-2-3
1-2-3-0
1-0-3-2
2-3-0-1
2-3-0-1
3-0-1-2
3-2-1-0
0
0
0
0
1
1
1
1
0-1-2-3-4-5-6-7
1-2-3-4-5-6-7-0
2-3-4-5-6-7-0-1
3-4-5-6-7-0-1-2
4-5-6-7-0-1-2-3
5-6-7-0-1-2-3-4
6-7-0-1-2-3-4-5
7-0-1-2-3-4-5-6
0-1-2-3-4-5-6-7
1-0-3-2-5-4-7-6
2-3-0-1-6-7-4-5
3-2-1-0-7-6-5-4
4-5-6-7-0-1-2-3
5-4-7-6-1-0-3-2
6-7-4-5-2-3-0-1
7-6-5-4-3-2-1-0
Not Supported
0
8
1
0
1
0
1
Full
Page
Starting
address
Cn, Cn + 1, Cn + 2
…Cn - 1,
0
(up to 256) n = A0-A7
Cn…
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Rev. 00D
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®
IS43R32400A
ISSI
EXTENDED MODE REGISTER DEFINITION
DLL Enable/Disable
The Extended Mode Register is a second register to
enable additional functions of the DDR SDRAM. This
register is loaded as a step in the normal initialization
of the device. The Load Extended Mode Register
command samples the values on inputs A0-A11, BA0
(High) and BA1 (Low) and stores them as register
values E0-E13. The additional functions are DLL
enable/disable and output drive strength. Similarly to
the Load Mode Register, the Load Extended Mode
Register has reserved bit values, a bank idle pre-
requisite, and a tMRD time requirement. The data in
the mode register is retained until it is reloaded or the
device loses its power.
When the Load Extended Mode Register command is
issued, DLL should be enabled (E0 = 0). Normal
operation of the device requires this, but DLL can be
disabled for debugging or evaluation, if necessary.
Output Drive Strength
Normal drive strength for the outputs is specified as
SSTL 2. However, there are options for reduced drive
strength included.
EXTENDED MODE REGISTER DEFINITION
Address Bus (Ax)
Mode Register (Ex)
BA1 BA0 A11 A10 A9 A8 A7 A6 A5 A4 A3 A2 A1 A0
Operating Mode
DLL
E13 E12 E11 E10 E9
E8
0
—
E7 Mode
E0
0
Status
Enable
Disable
0
1
0
0
—
0
—
0
Standard Operation
All Other States Reserved
—
—
—
—
1
Drive Strength
E6
0
E5
0
E4
0
E3
0
E2
0
E1
0
Type
Full Strength
0
0
0
0
0
1
Weak-60%
1
0
0
0
0
1
Matched Impedence
All Other States Reserved
—
—
—
—
—
—
16
Integrated Silicon Solution, Inc. — 1-800-379-4774
Rev. 00D
02/15/06
®
IS43R32400A
ISSI
Write
COMMANDS
The Write command is used to begin a burst write
access. When the command is given to the device,
All commands described in this section should be
issued only when the initialization sequence is
obeyed.
the BA0 and BA1 inputs select the bank, and address
bits A0-A7 (x32) select the block of columns and the
starting column for the subsequent burst. The rising
edge on the Data Strobe input(s) will cause the input
values on the Data Mask pin(s) and I/O pins to be
sampled for the write operation. The Auto Pre-charge
function is one option in the Write command. If the
Auto Pre-charge is enabled, the currently selected row
will be Pre-charged following the Write burst. If the
function is not enabled, the selected row will remain
open for further accesses at the end of the Write
burst.
Deselect
This feature blocks unwanted commands from being
executed. Chip select (CS) must be taken High to
cause Deselect. Operations that are underway are
not affected.
No Operation (NOP)
NOP is a command that prevents new commands from
being executed. CS must be Low, while RAS, CAS,
and WE must be High to issue NOP. NOP or Deselect
commands must be issued during wait states to allow
operations that are underway to continue uninter-
rupted.
Pre-charge
A Pre-charge command will de-activate an open row in
a bank. The input A8 (x32) is sampled at this time to
determine whether Pre-charge is applied to a single
bank or all banks. After tRP, the bank has been pre-
charged. It is de-activated, and goes into the idle
state and must be activated before any Read or Write
command can be issued to it. A Pre-charge command
is treated as a NOP if either (a) the specified bank is
already undergoing Pre-charge, or (b) the specified
bank has no open row.
Load Mode Register
The Base Mode Register is loaded during a step of
initialization to configure the DDR SDRAM. Load
Mode Register (LMR) is issued when BA0 and BA1
are Low, and A0-A11 are selected according to the
Mode Register Definition.
Load Extended Mode Register
The Extended Mode Register is loaded during a step
of initialization to enable the DLL of the device. Load
Extended Mode Register (LMR) is issued when BA0 is
High, BA1 is Low, and A0-A11 are selected according
to the Extended Mode Register Definition.
Auto Pre-charge
Auto Pre-charge is a feature that can be enabled as
an option in a Read or Write command. If the input
value on A8 (x32) is High during a Read or Write
command, an automatic Pre-charge will occur just
after the memory burst is completed. If the input value
on A8 (x32) is Low, no Pre-charge will occur. With
Auto Pre-charge, a minimum time of tRP must pass
before the next command is issued to the same bank.
Read
The Read command is used to begin a burst read
access. When the command is given to the device,
the BA0 and BA1 inputs select the bank, and address
bits A0-A7 (x32) select the block of columns and the
starting column for the subsequent burst. The cross-
ing of the CLK and CLK signals will cause the output
values on the I/O pins to be valid. The Auto Pre-
charge function is one option in the Read command. If
the Auto Pre-charge is enabled, the currently selected
row will be pre-charged following the Read burst. If
the function is not enabled, the selected row will
remain open for further accesses at the end of the
Read burst.
Active
The Active command opens a row in preparation for a
Read or Write burst. The row stays open for accesses
until the bank receives a Pre-charge command. Other
rows in the bank cannot be opened until the bank is
de-activated with a Pre-charge command and another
Active command is issued.
Burst Terminate
The Burst Terminate command truncates the burst of
the most recently issued Read command (with Auto
Pre-charge disabled). The open row being accessed
in the Read burst remains open.
Integrated Silicon Solution, Inc. — 1-800-379-4774
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Rev. 00D
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®
IS43R32400A
ISSI
open row will be pre-charged after completion of the
Read burst. Unless stated otherwise, all timing dia-
grams for Read operations have disabled Auto Pre-
charge.
Auto Refresh
The DDR SDRAM is issued the Auto Refresh com-
mand during normal operation to maintain data in the
memory array. All the banks must be idle for the
command to be executed. The device has 4096
refresh cycles every 32ms.
The Read command causes data to be retrieved and
placed in the pipeline. The subsequent command can
be NOP, Read, or Terminate Burst. The data from the
starting column specified in the Read command
appears on I/O pins following a CAS latency of after
the Read command. On each CLK and CLK crossing,
the data from the next column in the burst sequence is
output from the pipeline until the burst is completed
(see Read Burst, Non-consecutive Read Burst, and
Consecutive Read Burst). There are two cases in
which a full Read burst length is not completed. The
first is when the data retrieved from a subsequent
Read burst interrupts the previous burst (see Random
Read Accesses). The second is when a subsequent
Burst Terminate command truncates the burst (see
Terminating a Read Burst and Read to Write). The
Burst Terminate and Read commands obey the same
CAS latency timing such that they should be issued x
cycles after a previous Read command, where x is the
number of pairs of columns to output. By following a
desired command sequence, continuous data can be
output with either whole Read bursts or truncated
Read bursts. Whenever a Read burst finishes and no
other commands have been initiated, the I/O returns to
High-Z.
Self Refresh
To issue the Self Refresh command, CKE must be
Low. When the DDR SDRAM is in Self Refresh mode,
it retains the data contents without external clocking,
and ignores other input signals. The DLL is disabled
upon entering the Self Refresh mode, and is enabled
again upon leaving the mode. To exit Self Refresh, all
inputs must be stable prior to CKE going High. Next,
a NOP command command must be issued on each
clock cycle for at least tXSNR to ensure that internal
refresh operations are completed. To prepare for a
memory access, the DDR SDRAM must receive a DLL
reset followed by a NOP command for 200 clock
cycles.
DEVICE OPERATION
Bank and Row Activation
An Active command must be issued to the DDR
SDRAM to open a bank and row prior to an access.
The row will be available for a Read or Write com-
mand once a time tRCD has occurred. The Active
command is depicted in the figure. As CLK goes
High, CS and RAS are Low, while CKE, WE, and CAS
are High. Upon issuing the Active command, the
values on the address inputs specify the row, and BA0
and BA1 specify the bank. When an Active command
is issued for a bank and row, another row in that same
bank may be activated after a time tRC. When an
Active command is issued for a bank and row, a row in
a different bank may be activated after a time tRRD.
(Note: to ensure that time requirement tRCD, tRC, or
tRRD is met, NOP commands should be issued for a
whole number of clock cycles that is greater than the
time requirement (ie. tRCD) divided by the clock
period.)
If Auto Pre-charge is not enabled in the Read burst,
the Pre-charge command can be issued separately
following the Read command. The Pre-charge com-
mand should be received by the device x cycles after
the Read command, where x is the desired number of
pairs of columns to output during the Read burst.
After the Pre-charge command, it is necessary to wait
until both tRAS and tRP have been met before issuing
a new command to the same bank.
Data Strobe output is driven synchronously with the
output data on the I/O pins. The Low portion of the
Data Strobe just prior to the first output data is the
Read Pre-amble; and the Low portion coinciding with
the last output data is the Read Post-amble. Before
any Write command can be executed, any previous
Read burst must have been completed normally or
truncated by a Burst Terminate command. In the
diagram Read to Write, a Burst Terminate command is
issued to truncate a Read Burst early, and begin a
Write operation. After the Write command, a time
tDQSS is required prior to latching the data on the I/O.
Read Operation
A Read command starts a burst from an activated row.
The Read command is depicted in the figure. As CLK
goes High, CS and CAS are Low, while RAS, CKE,
and WE are High. The values on the inputs BA0 and
BA1 specify the bank to access, and the address
inputs specify the starting column in the open row. If
Auto Pre-charge is enabled in the Read command, the
18
Integrated Silicon Solution, Inc. — 1-800-379-4774
Rev. 00D
02/15/06
®
IS43R32400A
ISSI
truncating the input data, the timing parameter tWR
should be obeyed before issuing the Pre-charge
command (see Write to Pre-charge, Non-truncated).
Write Operation
A Write command starts a burst from an activated row.
The Write command is depicted in the figure. As CLK
goes High, CS, WE, and CAS are Low, while CKE and
RAS are High. The values on the inputs BA0 and BA1
specify the bank to access, and the address inputs
specify the starting column in the open row. If Auto
Pre-charge is enabled in the Write command, the
open row will be pre-charged after completion of the
Write burst and time tWR. Unless stated otherwise, all
timing diagrams for Write operations have disabled
Auto Pre-charge.
The period tWR begins on the first positive clock edge
after the last data input has been latched. The Write
burst can be truncated deliberately by using the Data
Mask feature and a Pre-charge command with an
earlier timing (see Write to Pre-charge, Truncated).
After the Pre-charge command, it is necessary to wait
until tRP has been met before issuing a new command
to the same bank.
Power Down Operation
The Write command in conjunction with Data Strobe
inputs causes data to be latched and placed in the
pipeline. The Low portion of the Data Strobe between
the Write command and the first rising edge of the
strobe is the Write Pre-amble; and the Low portion
following the last input data is the Write Post-amble.
A minimum time of tDQSS after the Write, the next
command can be NOP or Write. The data that is to be
written to the starting column specified in the Write
command will be latched upon the first rising edge of
Data Strobe input(s) DQS0-DQS3 (x32) after that
Write command. On each Data Strobe transition from
Low-to-High or High-to-Low, the input values on the I/
O are sampled, and enter pipeline to be written in the
pre-determined burst sequence (see Write Burst,
Consecutive Write to Write, and Non-consecutive
Write to Write). A new Write command can be issued
x cycles after a previous Write command, where x is
the number of pairs of columns to input. By following a
desired command sequence, continuous data can be
input with either whole Write bursts or truncated Write
bursts. Whenever a Write burst finishes and no other
commands have been initiated, the I/O returns to
High-Z.
When the DDR SDRAM enters Power Down mode,
power consumption is greatly reduced. To enter the
mode, several conditions must be met. There must be
neither a Read operation, nor a Write operation
underway in the device at CLK positive edge n – 1,
with CKE stable High. Prior to CLK positive edge n,
CKE should go Low. A Power Down mode is entered
if the appropriate command is issued as CLK n goes
High. (If the command at CLK n is Auto Refresh, the
SDRAM enters Self Refresh mode.) If the command at
CLK n is NOP or Deselect, the device will enter Pre-
charge Power Down mode or Active Power Down
mode. While in a Power Down mode, CKE must be
stable Low, and CLK and CLK signals maintained,
while other inputs are ignored. Pre-charge Power
Down mode conserves additional power by freezing
the DLL. To exit the Power Down mode, normal
voltages and clock frequency are applied. Prior to
CLK positive edge n, CKE should go High. A NOP or
Deselect command at CLK n, allows a valid command
to be issued at CLK positive edge n + 1. (If exiting
Self Refresh mode, the DLL is automatically enabled,
and the device must be prepared according to the
section describing Self Refresh.)
A Write burst may be followed by Read command, with
or without truncating the Write burst. To avoid truncat-
ing the input data, the timing parameter tWTR should
be obeyed before issuing the Read command (see
Write to Read, Non-truncated). The period tWTR
begins on the first positive clock edge after the last
data input has been latched. The Write burst can be
truncated deliberately by using the Data Mask feature
and a Read command with an earlier timing (see Write
to Read, Truncated).
Pre-charge Operation
When this command is issued, either a particular
bank, or all four banks will be de-activated after a time
period of tRP. The bank(s) will be available for a row
access until that time has occurred. The Pre-charge
command is depicted in the figure. As CLK goes
High, CS, RAS, and WE are Low, while CKE and CAS
are High. The values on the address inputs are Don’t
Care, except for the input A8 (x32), which determines
whether a single bank is selected for Pre-charge, or
all four banks. If A8 is Low, the inputs BA0 and BA1
select the single bank; however, if A8 is High, BA0
and BA1 are Don’t Care. Once any bank has been
pre-charged, it becomes idle. Before any row can
have a Read or Write access, it must be activated.
If Auto Pre-charge is not enabled in the Write burst,
the Pre-charge command can be issued separately
some time following the Write command. The proce-
dure to execute it is similar to the procedure to transi-
tion from a Write burst to a Read burst. To avoid
Integrated Silicon Solution, Inc. — 1-800-379-4774
19
Rev. 00D
02/15/06
®
IS43R32400A
ISSI
Timing Waveforms
Figure 1. AC Parameters for Read Timing ( Burst Length =4)
Figure 2. AC Parameters for Write Timing (Burst Length=4 )
CK#
CK
CMD
A0-11,
DQS
DM
DQ
20
Integrated Silicon Solution, Inc. — 1-800-379-4774
Rev. 00D
02/15/06
®
IS43R32400A
ISSI
Integrated Silicon Solution, Inc. — 1-800-379-4774
21
Rev. 00D
02/15/06
®
IS43R32400A
ISSI
Figure 6. Write with Auto Precharge (Burst Length = 4)
Figure 7. Read Burst Interrupt by Read (CAS Letancy =5, Burst Length = 4 )
Figure 8. Write Interrupted by Write (Burst Length =4)
Figure 9. Auto Refresh Timing
22
Integrated Silicon Solution, Inc. — 1-800-379-4774
Rev. 00D
02/15/06
®
IS43R32400A
ISSI
Figure 11. Precharge Command
tMRD
Integrated Silicon Solution, Inc. — 1-800-379-4774
23
Rev. 00D
02/15/06
®
IS43R32400A
ISSI
ORDERING INFORMATION
Commercial Range: 0°C to +70°C
Frequency
Speed(ns)
Order Part No.
Package
200 MHz
200 MHz
5
5
IS43R32400A-5B
IS43R32400A-5BL
144-ballFBGA
144-ballFBGA,Lead-free
166 MHz
166 MHz
6
6
IS43R32400A-6B
IS43R32400A-6BL
144-ballFBGA
144-ballFBGA,Lead-free
Industrial Range: -40°C to +85°C
Frequency
Speed(ns)
Order Part No.
Package
166 MHz
166 MHz
6
6
IS43R32400A-6BI
IS43R32400A-6BLI
144-ballFBGA
144-ballFBGA,Lead-free
24
Integrated Silicon Solution, Inc. — 1-800-379-4774
Rev. 00D
02/15/06
®
PACKAGING INFORMATION
ISSI
Mini Ball Grid Array
Package Code: B (144-Ball)
ø 0.45 +/− 0.05 (144X)
12 11 10 9 8 7 6 5 4 3 2 1
1
2 3 4 5 6 7 8 9 10 11 12
A
B
C
D
E
F
A
B
C
D
E
F
e
G
H
J
G
H
J
D1
K
L
D
K
L
M
M
e
E1
E
A1
A
Notes:
1. Controlling dimensions are in millimeters.
2. 0.8 mm Ball Pitch
SEATING PLANE
mBGA - 12mm x 12mm
MILLIMETERS
INCHES
Sym. Min. Typ. Max.
Min.
Typ. Max.
N0.
Leads
144
A
1.17
0.32
1.25 1.40
0.35 0.38
0.046
0.013
0.049 0.055
0.014 0.015
A1
D
11.95 12.00 12.05
8.80
11.95 12.00 12.05
0.470 0.472 0.474
0.346
0.470 0.472 0.474
D1
E
—
—
—
—
E1
e
—
—
8.80
0.80
—
—
—
—
0.346
0.031
—
—
Copyright © 2005 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time
without notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised to
obtain the latest version of this device specification before relying on any published information and before placing orders for products.
Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774
Rev. A
05/23/05
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