IS46DR16320-37CBLA1 [ISSI]
DDR DRAM, 32MX16, CMOS, PBGA84, 13 X 10.50 MM, 0.80 MM PITCH, LEAD FREE, MO-207, FBGA-84;
| 型号： | IS46DR16320-37CBLA1 |
| 厂家： | 
INTEGRATED SILICON SOLUTION, INC |
| 描述： | DDR DRAM, 32MX16, CMOS, PBGA84, 13 X 10.50 MM, 0.80 MM PITCH, LEAD FREE, MO-207, FBGA-84 动态存储器 双倍数据速率 内存集成电路 |
| 文件： | 总29页 (文件大小：860K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
IS43DR86400, IS43/46DR16320
PRELIMINARY INFORMATION
NOVEMBER 2009
512Mb (x8, x16) DDR2 SDRAM
FEATURES
•
•
•
•
•
•
Clock frequency up to 400MHz
•
On‐Chip DLL aligns DQ and DQs transitions with
CK transitions
Differential clock inputs CK and CK#
VDD and VDDQ = 1.8V ± 0.1V
PASR (Partial Array Self Refresh)
SSTL_18 interface
Posted CAS
•
•
•
•
•
•
•
Programmable CAS Latency: 3, 4, 5 and 6
Programmable Additive Latency: 0, 1, 2, 3, 4 and 5
Write Latency = Read Latency‐1
Programmable Burst Sequence: Sequential or
Interleave
tRAS lockout supported
•
•
•
•
•
•
•
•
•
Programmable Burst Length: 4 and 8
Automatic and Controlled Precharge Command
Power Down Mode
Read Data Strobe supported (x8 only)
Internal four bank operations with single pulsed
RAS
•
Operating temperature:
Auto Refresh and Self Refresh
Commercial (TA = 0°C to +70°C ; TC = 0°C to 85°C)
Industrial (TA = ‐40°C to +85°C; TC = ‐40°C to 95°C)
Automotive, A1 (TA = ‐40°C to +85°C; TC = ‐40°C to
95°C)
Refresh Interval: 7.8 μs (8192 cycles/64 ms)
OCD (Off‐Chip Driver Impedance Adjustment)
ODT (On‐Die Termination)
Weak Strength Data‐Output Driver Option
Bidirectional differential Data Strobe (Single‐
ended data‐strobe is an optional feature)
OPTIONS
ADDRESS TABLE
Parameter
64Mx8
A0‐A13
A0‐A9
BA0‐BA1
A10
32Mx16
A0‐A12
A0‐A9
BA0‐BA1
A10
• Configuration:
Row Addressing
Column Addressing
Bank Addressing
Precharge Addressing
−
−
64Mx8 (16M x 8 x 4 banks)
32Mx16 (8M x 16 x 4 banks)
• Package:
−
−
60‐ball FBGA for x8
84‐ball FBGA for x16
Clock Cycle Timing
‐5B
‐37C
‐3D
‐25E
‐25D
Units
Speed Grade
CL‐tRCD‐tRP
tCK (CL=3)
DDR2‐400B
DDR2‐533C
DDR2‐667D
DDR2‐800E
DDR2‐800D
3‐3‐3
5
5
4‐4‐4
5
3.75
5‐5‐5
5
3.75
6‐6‐6
5
3.75
5‐5‐5
5
3.75
tCK
ns
ns
tCK (CL=4)
tCK (CL=5)
5
5
3.75
3.75
266
3
3
3
2.5
2.5
400
ns
ns
tCK (CL=6)
2.5
400
Frequency (max)
200
333
MHz
Note: The ‐5B device specification is shown for reference only.
Copyright © 2006 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time without
notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised to obtain the
latest version of this device specification before relying on any published information and before placing orders for products.
Integrated Silicon Solution, Inc. – www.issi.com –
1
Rev. 00A, 11/17/2009
IS43DR86400, IS43/46DR16320
Package Ball‐out and Description
DDR2 SDRAM (64Mx8) BGA Ball‐out (Top‐View) (10.00 mm X 10.50 mm Body, 0.8 mm pitch)
1 2 3 4 5 6 7 8 9
A
VDD RDQS
DQ6 VSSQ
VDDQ DQ1
DQ4 VSSQ
VDDL VREF
CKE
VDDQ
DQ7
VSSQ DQS
DQS VSSQ
VDDQ DQ0
DQ2 VSSQ
VSSDL LDQS
RAS CK
CAS CS
VSS
DM/RDQS
VDDQ
DQ3
VSS
B
C
D
E
F
G
H
J
VDDQ
DQ5
VDD
ODT
WE
NC
BA0
A10
A3
BA1
A1
VDD
VSS
A2
A6
A0
A4
VSS
A5
K
L
A7
A11
NC
A8
A9
VDD A12
A13
NC
Not populated
Symbol
CK, CK#
CKE
Description
Input clocks
Clock enable
Chip Select
Command control pins
Address
Notes:
1. Pins B3 and A2 have identical capacitance as pins B7
and A8.
2. For a read, when enabled, strobe pair RDQS & RDQS#
are identical in function and timing to strobe pair DQS &
DQS# and input masking function is disabled.
3. The function of DM or RDQS/RDQS# are enabled by
EMRS command.
4. VDDL and VSSDL are power and ground for the DLL. It
is recommended that they are isolated on the device
from VDD, VDDQ, VSS, and VSSQ.
CS#
RAS#,CAS#,WE#
Ax
BAx
Bank Address
I/O
DQx
DQS, DQS#
RDQS, RDQS#
DM
Data Strobe
Redundant Data Strobe
Input data mask
Supply voltage
Ground
VDD
VSS
VDDQ
VSSQ
DQ power supply
DQ ground
VREF
Reference voltage
DLL power supply
DLL ground
VDDL
VSSDL
ODT
On Die Termination Enable
No connect
NC
Integrated Silicon Solution, Inc. – www.issi.com –
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Rev. 00A, 11/17/2009
IS43DR86400, IS43/46DR16320
DDR2 SDRAM (32Mx16) BGA Ball‐out (Top‐View) (10.50 mm X 13.00 mm Body, 0.8 mm pitch)
1 2 3 4 5 6 7 8 9
A
VDD
NC
VDDQ
DQ15
VDDQ
DQ13
VDDQ
DQ7
VSS
UDM
VDDQ
DQ11
VSS
VSSQ UDQS
UDQS VSSQ
VDDQ DQ8
DQ10 VSSQ
VSSQ LDQS
LDQS VSSQ
VDDQ DQ0
DQ2 VSSQ
VSSDL CK
RAS CK
CAS CS
B
C
D
E
F
DQ14 VSSQ
VDDQ DQ9
DQ12 VSSQ
VDD
NC
DQ6 VSSQ
VDDQ DQ1
DQ4 VSSQ
VDDL VREF
CKE
LDM
VDDQ
DQ3
VSS
G
H
J
VDDQ
DQ5
VDD
K
L
ODT
WE
BA1
A1
NC
BA0
A10/AP
A3
M
N
P
R
VDD
VSS
A2
A6
A0
A4
A8
NC
VSS
A5
A7
A9
A11
NC
VDD A12
NC
Not populated
Symbol
CK, CK#
CKE
Description
Note:
VDDL and VSSDL are power and ground for the DLL. It is
recommended that they are isolated on the device from
VDD, VDDQ, VSS, and VSSQ.
Input clocks
Clock enable
Chip Select
CS#
RAS#,CAS#,WE#
Ax
Command control inputs
Address
BAx
Bank Address
DQx
I/O
UDQS, UDQS#
LDQS, LDQS#
UDM, LDM
VDD
Upper Byte Data Strobe
Lower Byte Data Strobe
Input data mask
Supply voltage
Ground
VSS
VDDQ
DQ power supply
DQ ground
VSSQ
VREF
Reference voltage
DLL power supply
DLL ground
VDDL
VSSDL
ODT
On Die Termination Enable
No connect
NC
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Rev. 00A, 11/17/2009
IS43DR86400, IS43/46DR16320
Functional Description
Power‐up and Initialization
DDR2 SDRAMs must be powered up and initialized in a predefined manner. Operational procedures other than those specified may
result in undefined operation.
Power‐up and Initialization Sequence
The following sequence is required for Power‐up and Initialization.
1. Either one of the following sequence is required for Power‐up:
A. While applying power, attempt to maintain CKE below 0.2 x VDDQ and ODT* at a LOW state (all other inputs may be
undefined.) The VDD voltage ramp time must be no greater than 200 ms from when VDD ramps from 300 mV to
VDD(Min); and during the VDD voltage ramp, |VDD‐VDDQ| ≥ 0.3 V. Once the ramping of the supply voltages is
complete (when VDDQ crosses VDDQ(Min)), the supply voltage specifications provided in the table Recommended DC
Operating Conditions (SSTL_1.8), prevail.
−
−
−
−
VDD, VDDL and VDDQ are driven from a single power converter output, AND
VTT is limited to 0.95V max, AND
VREF tracks VDDQ/2, VREF must be within ± 300mV with respect to VDDQ/2 during supply ramp time.
VDDQ ≥ VREF must be met at all times
B. While applying power, attempt to maintain CKE below 0.2 x VDDQ and ODT* at a LOW state (all other inputs may be
undefined, voltage levels at I/Os and outputs must be less than VDDQ during voltage ramp time to avoid DRAM latch‐
up. During the ramping of the supply voltages, VDD ≥ VDDL ≥ VDDQ must be maintained and is applicable to both AC
and DC levels until the ramping of the supply voltages is complete, which is when VDDQ crosses VDDQ min. Once the
ramping of the supply voltages is complete, the supply voltage specifications provided in the table Recommended DC
Operating Conditions (SSTL‐1.8), prevail.
−
−
−
−
Apply VDD/VDDL before or at the same time as VDDQ.
VDD/VDDL voltage ramp time must be no greater 200 ms from when VDD ramps from 300 mV to VDD(Min) .
Apply VDDQ before or at the same time as VTT.
The VDDQ voltage ramp time from when VDD(Min) is achieved on VDD to the VDDQ(Min) is achieved on VDDQ
must be no greater than 500 ms.
2. Start clock and maintain stable condition.
3. For the minimum of 200 µs after stable power (VDD, VDDL, VDDQ, VREF, and VTT values are in the range of the minimum and
maximum values specified in the table Recommended DC Operating Conditions (SSTL‐1.8)) and stable clock (CK, CK#), then apply
NOP or Deselect and assert a logic HIGH to CKE.
4. Wait minimum of 400 ns then issue a precharge all command. During the 400 ns period, a NOP or Deselect command must be
issued to the DRAM.
5. Issue an EMRS command to EMR(2).
6. Issue an EMRS command to EMR(3).
7. Issue EMRS to enable DLL.
8. Issue a Mode Register Set command for DLL reset.
9. Issue a precharge all command.
10. Issue 2 or more auto‐refresh commands.
11. Issue a MRS command with LOW to A8 to initialize device operation. (i.e. to program operating parameters without resetting
the DLL.)
12. Wait at least 200 clock cycles after step 8 and then execute OCD Calibration (Off Chip Driver impedance adjustment). If OCD
calibration is not used, EMRS Default command (A9=A8=A7=HIGH) followed by EMRS OCD Calibration Mode Exit command
(A9=A8=A7=LOW) must be issued with other operating parameters of EMR(1).
13. The DDR2 SDRAM is now ready for normal operation.
Note*: To guarantee ODT off, VREF must be valid and a LOW level must be applied to the ODT pin.
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4
Rev. 00A, 11/17/2009
IS43DR86400, IS43/46DR16320
Initialization Sequence after Power‐Up Diagram
tCH
tCL
CK
CK#
~
~
~
~
~
~
~
~
~
~
~
tIS
~
~
~
~
~
~
~
~
~
~
~
~
~
~
~
~
~
~
~
~
~
~
~
~
~
tIS
ODT
PRE
ALL
PRE
ALL
Any
Com
NOP
EMRS
MRS
REF
REF
MRS
EMRS
EMRS
Command
~
~
~
~
~
~
~
~
Follow OCD
Flowchart
400ns
tRP
tMRD
tMRD
tRP
tRFC
Minimum 200 Cycles
tRFC
tMRD
tOIT
DLL
Enable
DLL
Reset
OCD
Default
OCD Cal.
Mode Exit
Programming the Mode Register and Extended Mode Registers
For application flexibility, burst length, burst type, CAS# latency, DLL reset function, write recovery time (WR) are user defined
variables and must be programmed with a Mode Register Set (MRS) command. Additionally, DLL disable function, driver impedance,
additive CAS latency, ODT (On Die Termination), single‐ended strobe, and OCD (off chip driver impedance adjustment) are also user
defined variables and must be programmed with an Extended Mode Register Set (EMRS) command. Contents of the Mode Register
(MR) or Extended Mode Registers EMR[1] and EMR[2] can be altered by re‐executing the MRS or EMRS Commands. Even if the user
chooses to modify only a subset of the MR, EMR[1], or EMR[2] variables, all variables within the addressed register must be
redefined when the MRS or EMRS commands are issued. The x16 option does not have A13, so all references to this address can be
ignored for this option.
MRS, EMRS and Reset DLL do not affect memory array contents, which mean re‐initialization including those can be executed at any
time after power‐up without affecting memory array contents.
DDR2 Mode Register (MR) Setting
The mode register stores the data for controlling the various operating modes of DDR2 SDRAM. It controls CAS# latency, burst
length, burst sequence, DLL reset, tWR, and active power down exit time to make DDR2 SDRAM useful for various applications. The
default value of the mode register is not defined, therefore the mode register must be written after power‐up for proper operation.
The mode register is written by asserting LOW on CS#, RAS#, CAS#, WE#, BA0 and BA1, while controlling the state of address pins A0
– A13. The DDR2 SDRAM should be in all bank precharge with CKE already HIGH prior to writing into the mode register. The mode
register set command cycle time (tMRD) is required to complete the write operation to the mode register. The mode register
contents can be changed using the same command and clock cycle requirements during normal operation as long as all banks are in
the precharge state. The mode register is divided into various fields depending on functionality. Burst length is defined by A0 ‐ A2
with options of 4 and 8 bit burst lengths. The burst length decodes are compatible with DDR SDRAM. Burst address sequence type is
defined by A3; CAS latency is defined by A4 ‐ A6. The DDR2 doesn’t support half clock latency mode. A7 is used for test mode. A8 is
used for DLL reset. A7 must be set to LOW for normal MRS operation. Write recovery time tWR is defined by A9 ‐ A11. Refer to the
table for specific codes.
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Rev. 00A, 11/17/2009
IS43DR86400, IS43/46DR16320
Mode Register (MR) Diagram
Address
Field
Mode
Register
Active power down exit time
Fast exit (use tXARD)
A12
0
Slow exit(use tXARDS)
BA1
0
0
0
1
BA0
WR(cycles)(2)
Reserved
A13(1)
A11
0
0
0
0
1
1
1
1
A10
0
A9
0
A12
A11
A10
A9
PD1
2
0
1
1
0
0
1
1
1
3
4
5
6
0
1
0
1
WR
Reserved
Reserved
0
1
A8
DLL
TM
DLL Reset
No
A8
0
1
Mode
Normal
Reserved
A7
0
1
A7
Yes
A6
CAS
Latency
CAS Latency
Reserved
Reserved
Reserved
A6
0
0
0
0
A5
0
0
1
1
A4
0
1
0
1
A5
A4
3
4
A3
BT
1
0
0
5
6
1
1
1
0
1
1
1
0
1
A2
Burst
Length
Reserved
A1
Burst Type
Sequential
Interleave
A3
0
1
A0
A2
0
0
A1
1
1
A0
0
1
BL
4
8
Notes:
1. A13 is reserved for future use and must be set to 0 when programming the MR.
2. The minimum value for WR(write recovery for autoprecharge) is determined by tCK(Max) and maximum value for WR is determined by tCK(Min). WR in clock
cycles is calculated by dividing tWR (in ns) by tCK (in ns) and rounding up a non‐integer value to the next integer (WR[cycles] = tWR(ns)/tCK(ns)). The mode
register must be programmed to this value. This is also used with tRP to determine tDAL.
DDR2 Extended Mode Register 1 (EMR[1]) Setting
The extended mode register 1 stores the data for enabling or disabling the DLL, output driver strength, ODT value selection and
additive latency. The default value of the extended mode register is not defined, therefore the extended mode register must be
written after power‐up for proper operation. Extended mode register 1 is written by asserting LOW on CS#, RAS#, CAS#, WE#, BA1
and HIGH on BA0, and controlling pins A0 ‐ A13. The DDR2 SDRAM should be in all bank precharge with CKE already HIGH prior to
writing into the extended mode register. The mode register set command cycle time (tMRD) must be satisfied to complete the write
operation to the extended mode register. Mode register contents can be changed using the same command and clock cycle
requirements during normal operation as long as all banks are in the precharge state. A0 is used for DLL enable or disable. A1 is used
for enabling reduced strength data‐output driver. A3 ‐ A5 determines the additive latency, A2 and A6 are used for ODT value
selection, A7 ‐ A9 are used for OCD control, A10 is used for DQS# disable and A11 is used for RDQS enable.
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Rev. 00A, 11/17/2009
IS43DR86400, IS43/46DR16320
DLL Enable/Disable
The DLL must be enabled for normal operation. DLL enable is required during power up initialization, and upon returning to normal
operation after having the DLL disabled. The DLL is automatically disabled when entering self refresh operation and is automatically
re‐enabled upon exit of self refresh operation. Any time the DLL is enabled (and subsequently reset), 200 clock cycles must occur
before a Read command can be issued to allow time for the internal clock to be synchronized with the external clock. Failing to wait
for synchronization to occur may result in a violation of the tAC or tDQSCK parameters.
Extended Mode Register 1(EMR[1]) Diagram
Qoff
A12
0
1
Address
Field
Mode
Register
Output buffer enabled
Ouput buffer disabled
BA1
0
1
0
A11(2)
0
1
A10
0
1
RDQS Enable
A11
A10
Strobe Function Matrix
BA0
A13(1)
Disable
Enable
DQS#
Enable
Disable
(RDQS)
(DQS#)
RDQS/DM RDQS#
DQS
DQS
DQS
DQS
DQS
DQS#
DQS#
Hi‐Z
DQS#
Hi‐Z
0
0
1
1
0
1
0
1
DM
DM
Hi‐Z
Hi‐Z
RDQS#
Hi‐Z
A12
A11
A10
A9
Qoff
RDQS
DQS#
RDQS
RDQS
OCD Calibration Program
OCD Calibration mode exit; maintain setting
A9
0
0
0
1
A8
0
A7
0
Drive(1)
Drive(0)
0
1
0
1
1
0
0
1
OCD
Program
A8
Adjust mode(3)
OCD Calibration default(4)
1
A7
Additive Latency
A5
0
0
0
0
1
1
1
1
A4
0
0
1
1
0
0
1
1
A3
0
1
0
1
0
1
0
1
A6
Rtt
0
1
2
3
4
5
Rtt(NOMINAL)
ODT Disabled
75 ohms
150 ohms
50 ohms
A6
0
0
1
1
A2
0
1
0
1
A5
Additive
Latency
A4
A3
Reserved
Reserved
A2
Rtt
D.I.C
DLL
A1
Output Drive Impedance Control
Normal Strength (100%)
DLL enable
A1
0
1
A0
0
1
Enable
Disable
A0
Reduced strength (60%)
Notes:
1. A13 is reserved for future use and must be set to 0 when programming the EMR[1].
2. If RDQS is enabled, the DM function is disabled. RDQS is active for reads and don’t care for writes. The x16 option does not support RDQS. This must be set to 0
when programming the EMR[1] for the x16 option.
3. When Adjust mode is issued, AL from previously set value must be applied.
4. After setting to default, OCD calibration mode needs to be exited by setting A9‐A7 to 000.
DDR2 Extended Mode Register 2 (EMR[2]) Setting
The extended mode register 2 controls refresh related features. The default value of the extended mode register 2 is not defined.
Therefore, the extended mode register must be programmed during initialization for proper operation. The extended mode register
2 is written by asserting LOW on CS, RAS, CAS, WE, BA0, and BA1, while controlling pins A0‐A13. The DDR2 SDRAM should be in all
bank precharge state with CKE already HIGH prior to writing into extended mode register 2. The mode register set command cycle
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Rev. 00A, 11/17/2009
IS43DR86400, IS43/46DR16320
time (tMRD) must be satisfied to complete the write operation to the extended mode register 2. Mode register contents can be
changed using the same command and clock cycle requirements during normal operation as long as all banks are in precharge state.
Extended Mode Register 2 (EMR[2]) Diagram
Address
Field
Mode
Register
BA1
1
0
0
BA0
A13(1)
A12(1)
A11(1)
A10(1)
A9(1)
A8(1)
A7
0
0
0
0
0
High Temperature Self-Refresh Rate Enable
A7
0
Disable
SRFt
Enable(2)
1
A6(1)
A5(1)
A4(1)
A3(1)
A2
0
0
0
0
Partial Array Self Refresh for 8 Banks
A2
0
A1
0
A0
0
Full Array
Half Array(BA[2:0]=000, 001, 010, 011)
Quarter Array(BA[2:0]=000, 001)
1/8 array(BA[2:0]=000
0
0
1
0
1
0
0
1
1
3/4 array(BA[2:0]=010, 011, 100, 101, 110, 111)
Half array(BA[2:0]=100, 101, 110, 111)
Quarter array(BA[2:0]=110, 111)
1/8 array(BA[2:0]=111
1
0
0
PASR(3)
A1
1
0
1
1
1
0
A0
1
1
1
Notes:
1. A3‐A6, and A8‐A13 are reserved for future use and must be set to 0 when programming the EMR[2].
2. Only Industrial and Automotive grade devices support the high temperature Self‐Refresh Mode. The controller can set the EMR (2) [A7] bit to enable this self‐
refresh rate if Tc > 85°C while in self‐refresh operation. TOPER may not be violated.
3. If PASR (Partial Array Self Refresh) is enabled, data located in areas of the array beyond the specified address range will be lost if self refresh is entered. Data
integrity will be maintained if tREF conditions are met and no Self Refresh command is issued.
DDR2 Extended Mode Register 3 (EMR[3]) Setting
No function is defined in extended mode register 3. The default value of the extended mode register 3 is not defined. Therefore, the
extended mode register 3 must be programmed during initialization for proper operation.
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Rev. 00A, 11/17/2009
IS43DR86400, IS43/46DR16320
DDR2 Extended Mode Register 3 (EMR[3]) Diagram
Address Field
Mode Register
BA1 BA0 A13 A12 A11 A10
0* 0* 0* 0*
A9
A8
A7
A6
A5
A4
A3
A2
A1
A0
1
1
0*
0*
0*
0*
0*
0*
0*
0*
0*
0*
Note: All bits in EMR[3] except BA0 and BA1 are reserved for future use and must be set to 0 when programming the EMR[3].
Truth Tables
Operation or timing that is not specified is illegal, and after such an event, in order to guarantee proper operation, the DRAM must
be powered down and then restarted through the specified initialization sequence before normal operation can continue.
Command Truth Table
CKE
An(9)‐A11
Function
CS#
RAS# CAS# WE#
BA0‐BA1
A10 A9‐A0
Opcode
Notes
Previous Current
Cycle
Cycle
(Extended) Mode Register
Refresh (REF)
Self Refresh Entry
H
H
H
H
H
L
L
L
L
H
L
L
L
L
L
L
L
L
L
H
H
L
H
L
L
L
L
X
H
L
L
L
L
X
H
H
H
H
L
L
L
L
H
X
X
H
X
H
L
H
H
X
H
L
L
H
L
BA
X
X
1, 2
1
1, 8
X
X
X
X
X
X
Sel Refresh Exit
L
H
X
X
X
X
1, 7, 8
Single Bank Precharge
Precharge All Banks
Bank Activate
H
H
H
H
H
H
H
H
H
H
H
H
H
H
H
H
X
BA
X
X
X
L
H
X
X
1, 2
1
1, 2
L
L
Row Address
BA
BA
BA
BA
BA
X
Write
H
H
H
H
H
X
X
H
X
H
X
X
X
X
X
X
L
H
L
H
X
X
Column 1, 2, 3, 10
Column 1, 2, 3, 10
Column 1, 2, 3, 10
Column 1, 2, 3, 10
Write with Auto Precharge
Read
Read with Auto Precharge
No Operation (NOP)
Device Deselect
L
H
H
H
X
X
H
X
H
X
X
1
1
X
X
Power Down Entry
H
L
X
X
X
X
1,4
Power Down Exit
L
H
X
X
X
X
1, 4
Notes:
1. All DDR2 SDRAM commands are defined by states of CS#, RAS#, CAS#, WE# and CKE at the rising edge of the clock.
2. Bank addresses BA0, BA1 (BA) determine which bank is to be operated upon. For (E)MRS BA selects an (Extended) Mode Register.
3. Burst reads or writes at BL=4 cannot be terminated or interrupted. See sections "Reads interrupted by a Read" and "Writes interrupted by a Write" for details.
4. The Power Down Mode does not perform any refresh operations. The duration of Power Down is therefore limited by the refresh requirements
5. The state of ODT does not affect the states described in this table. The ODT function is not available during Self Refresh.
6. “X” means “H or L (but a defined logic level)”
7. Self refresh exit is asynchronous.
8. VREF must be maintained during Self Refresh operation.
9. An refers to the MSBs of addresseses. An=A13 for x8, and An=A12 for x16.
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Clock Enable (CKE) Truth Table
Command (N)(3)
RAS#, CAS#, WE#, CS#
X
CKE
Current State(2)
Action (N)(3)
Notes
Previous Cycle(1)(N‐1)
Current Cycle(1)(N)
L
L
L
H
L
H
L
L
L
H
Maintain Power‐Down
Power Down Exit
Maintain Self‐Refresh
Self‐Refresh Exit
11, 13, 15
4, 8, 11, 13
11, 15, 16
4, 5, 9, 16
4, 8, 10, 11, 13
4, 8, 10, 11, 13
6, 9, 11, 13
7
Power Down
Deselect or NOP
X
Deselect or NOP
Deselect or NOP
Deselect or NOP
Refresh
L
L
H
H
H
H
Self Refresh
Bank(s) Active
All Banks Idle
Active Power Down Entry
Precharge Power Down Entry
Self‐Refresh Entry
Refer to the Command Truth Table
Notes:
1. CKE (N) is the logic state of CKE at clock edge N; CKE (N–1) was the state of CKE at the previous clock edge.
2. Current state is the state of the DDR2 SDRAM immediately prior to clock edge N.
3. COMMAND (N) is the command registered at clock edge N, and ACTION (N) is a result of COMMAND (N).
4. All states and sequences not shown are illegal or reserved unless explicitly described elsewhere in this document.
5. On Self Refresh Exit, DESELECT or NOP commands must be issued on every clock edge occurring during the tXSNR period. Read commands may be issued only
after tXSRD (200 clocks) is satisfied.
6. Self Refresh mode can only be entered from the All Banks Idle state.
7. Must be a legal command as defined in the Command Truth Table.
8. Valid commands for Power Down Entry and Exit are NOP and DESELECT only.
9. Valid commands for Self Refresh Exit are NOP and DESELECT only.
10. Power Down and Self Refresh cannot be entered while Read or Write operations, (Extended) Mode Register Set operations or Precharge operations are in
progress.
11. tCKEmin of 3 clocks means CKE must be registered on three consecutive positive clock edges. CKE must remain at the valid input level the entire time it takes to
achieve the 3 clocks of registration. Thus, after any CKE transition, CKE may not transition from its valid level during the time period of tIS + 2 x tCK + tIH.
12. The state of ODT does not affect the states described in this table. The ODT function is not available during Self Refresh.
13. The Power Down does not perform any refresh operations. The duration of Power Down Mode is therefore limited by the refresh requirements outlined in this
datasheet.
14. CKE must be maintained HIGH while the DDRII SDRAM is in OCD calibration mode.
15. “X” means “Don’t Care (including floating around VREF)” in Self Refresh and Power Down. However ODT must be driven HIGH or LOW in Power Down if the ODT
function is enabled (Bit A2 or A6 set to “1” in EMR[1]).
16. VREF must be maintained during Self Refresh operation.
Data Mask (DM) Truth Table
Name (Functional)
Write Enable
DM
L
H
DQs
Valid
X
Note
1
1
Write Inhibit
Note:
1. Used to mask write data, provided coincident with the corresponding data.
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Commands
DESELECT
The DESELECT function (CS# HIGH) prevents new commands from being executed by the DDR2 SDRAM. The DDR2 SDRAM is
effectively deselected. Operations already in progress are not affected. DESELECT is also referred to as COMMAND INHIBIT.
NO OPERATION (NOP)
The NO OPERATION (NOP) command is used to instruct the selected DDR2 SDRAM to perform a NOP (CS# is LOW; RAS#, CAS#, and
WE# are HIGH). This prevents unwanted commands from being registered during idle or wait states. Operations already in progress
are not affected.
LOAD MODE (LM)
The mode registers are loaded via bank address and address inputs. The bank address balls determine which mode register will be
programmed. See “Mode Register (MR)” in the next section. The LM command can only be issued when all banks are idle, and a
subsequent executable command cannot be issued until tMRD is met.
ACTIVATE
The ACTIVATE command is used to open (or activate) a row in a particular bank for a subsequent access. The value on the bank
address inputs determines the bank, and the address inputs select the row. This row will remains active (or open) for accesses until a
PRECHARGE command is issued to that bank. A PRECHARGE command must be issued before opening a different row in the same
bank.
READ
The READ command is used to initiate a burst read access to an active row. The value on the bank address inputs determine the
bank, and the address provided on address inputs A0–A9 selects the starting column location. The value on input A10 determines
whether or not auto precharge is used. If auto precharge is selected, the row being accessed will be precharged at the end of the
READ burst; if auto precharge is not selected, the row will remain open for subsequent accesses. DDR2 SDRAM also supports the AL
feature, which allows a READ or WRITE command to be issued prior to tRCD(Min) by delaying the actual registration of the
READ/WRITE command to the internal device by AL clock cycles.
WRITE
The WRITE command is used to initiate a burst write access to an active row. The value on the bank select inputs selects the bank,
and the address provided on inputs A0–A9 selects the starting column location. The value on input A10 determines whether or not
auto precharge is used. If auto precharge is selected, the row being accessed will be precharged at the end of the WRITE burst; if
auto precharge is not selected, the row will remain open for subsequent accesses.
DDR2 SDRAM also supports the AL feature, which allows a READ or WRITE command to be issued prior to tRCD(MIN) by delaying the
actual registration of the READ/WRITE command to the internal device by AL clock cycles. Input data appearing on the DQ is written
to the memory array subject to the DM input logic level appearing coincident with the data. If a given DM signal is registered LOW,
the corresponding data will be written to memory; if the DM signal is registered HIGH, the corresponding data inputs will be ignored,
and a WRITE will not be executed to that byte/column location.
PRECHARGE
The PRECHARGE command is used to deactivate the open row in a particular bank or the open row in all banks. The bank(s) will be
available for a subsequent row activation a specified time (tRP) after the PRECHARGE command is issued, except in the case of
concurrent auto precharge, where a READ or WRITE command to a different bank is allowed as long as it does not interrupt the data
transfer in the current bank and does not violate any other timing parameters. After a bank has been precharged, it is in the idle
state and must be activated prior to any READ or WRITE commands being issued to that bank. A PRECHARGE command is allowed if
there is no open row in that bank (idle state) or if the previously open row is already in the process of precharging. However, the
precharge period will be determined by the last PRECHARGE command issued to the bank.
REFRESH
REFRESH is used during normal operation of the DDR2 SDRAM and is analogous to CAS#‐before‐RAS# (CBR) REFRESH. All banks must
be in the idle mode prior to issuing a REFRESH command. This command is nonpersistent, so it must be issued each time a refresh is
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required. The addressing is generated by the internal refresh controller. This makes the address bits a “Don’t Care” during a
REFRESH command.
SELF REFRESH
The SELF REFRESH command can be used to retain data in the DDR2 SDRAM, even if the rest of the system is powered down. When
in the self refresh mode, the DDR2 SDRAM retains data without external clocking. All power supply inputs (including VREF) must be
maintained at valid levels upon entry/exit and during SELF REFRESH operation.
The SELF REFRESH command is initiated like a REFRESH command except CKE is LOW. The DLL is automatically disabled upon
entering self refresh and is automatically enabled upon exiting self refresh.
ODT (On‐Die Termination)
The On‐Die Termination feature allows the DDR2 SDRAM to easily implement a termination resistance (Rtt) for each DQ, DQS, DQS#,
RDQS, and RDQS# signal. The ODT feature can be configured with the Extended Mode Register Set (EMRS) command, and turned on
or off using the ODT input signal. Before and after the EMRS is issued, the ODT input must be received with respect to the timings of
tAOFD, tMOD(max), tAOND; and the CKE input must be held HIGH throughout the duration of tMOD(max).
The DDR2 SDRAM supports the ODT on and off functionality in Active, Standby, and Power Down modes, but not in Self Refresh
mode. ODT timing diagrams follow for Active/Standby mode and Power Down mode.
EMRS to ODT Update Delay
CK#
CK
~
~
~
~
Command
EMRS
NOP
NOP
NOP
NOP
NOP
ODT
tIS
~
~
tMOD(Max)
tAOND
tMOD(Min)
tAOFD
Updated
Old Setting
ODT Ready
ODT Timing for Active/Standby (Idle) Mode and Standard Active Power‐Down Mode
0
1
2
3
4
5
6
7
CK#
CK
~
~
~
tIS
CKE
ODT
tIS
tIS
tANPD
tIS
VIH(AC)
VIL(AC)
tAXPD
tAOND
tAOFD
Internal Term.
Resistance
RTT
~
tAOF(Min)
tAON(Min)
tAOF(Max)
tAON(Max)
Notes:
1. Both ODT to Power Down Entry and Exit Latency timing parameter tANPD and tAXPD are met, therefore Non‐Power Down Mode timings have to be applied.
2. ODT turn‐on time, tAON(Min) is when the device leaves high impedance and ODT resistance begins to turn on. ODT turn on time max, tAON(Max) is when the
ODT resistance is fully on. Both are measured from tAOND.
3. ODT turn off time min, tAOF(Min), is when the device starts to turn off the ODT resistance. ODT turn off time max, tAOF(Max) is when the bus is in high
impedance. Both are measured from tAOFD.
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ODT Timing for Precharge Power‐Down Mode
Note: Both ODT to Power Down Endtry and Exit Latencies tANPD and tAXPD are not met, therefore Power‐Down Mode timings have to be applied.
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Absolute Maximum DC Ratings
Symbol
Parameter
Rating
Units
Notes
1, 3
VDD
Voltage on VDD pin relative to Vss
Voltage on VDDQ pin relative to Vss
Voltage on VDDL pin relative to Vss
Voltage on any pin relative to Vss
Storage Temperature
‐1.0 to 2.3
‐ 0.5 to 2.3
‐ 0.5 to 2.3
‐ 0.5 to 2.3
‐55 to +100
V
V
VDDQ
VDDL
1, 3
V
1, 3
Vin, Vout
V
1, 4
Tstg
°C
1, 2
Notes:
1. Stresses greater than those listed under Absolute Maximum DC Ratings may cause permanent damage to the device. This is a stress rating only and functional
operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to
absolute maximum rating conditions for extended periods may affect reliability.
2. Storage Temperature is the case surface temperature on the center/top side of the DRAM.
3. VDD and VDDQ must be within 300mV of each other at all times; and VREF must be not greater than 0.6 x VDDQ. When VDD and VDDQ and VDDL are less than
500mV, VREF may be equal to or less than 300mV.
4. Voltage on any input or I/O may not exceed voltage on VDDQ.
AC and DC Operating Conditions
Recommended DC Operating Conditions (SSTL ‐1.8)
Rating
Symbol
Parameter
Units
Notes
Min.
1.7
Typ.
1.8
1.8
1.8
Max.
1.9
VDD
VDDL
VDDQ
Supply Voltage
V
V
V
1
5
Supply Voltage for DLL
Supply Voltage for Output
1.7
1.9
1.7
1.9
1, 5
VREF
VTT
Input Reference Voltage
Termination Voltage
0.49*VDDQ
VREF‐0.04
0.50*VDDQ
VREF
0.51*VDDQ
VREF+0.04
mV
V
2, 3
4
Notes:
1. There is no specific device VDD supply voltage requirement for SSTL‐1.8 compliance. However, under all conditions VDDQ must be less than or equal to VDD.
2. The value of VREF may be selected by the user to provide optimum noise margin in the system. Typically the value of VREF is expected to be about 0.5 x VDDQ
of the transmitting device and VREF is expected to track variations in VDDQ.
3. Peak to peak AC noise on VREF may not exceed ±2% VREF(DC).
4. VTT of transmitting device must track VREF of receiving device.
5. AC parameters are measured with VDD, VDDQ and VDDL tied together.
Operating Temperature Condition(1, 2, 3)
Symbol
TOPER
TOPER
Parameter
Commercial Operating Temperature
Industrial Operating Temperature, Automotive Operating Temperature (A1)
Rating
Units
°C
°C
Tc = 0 to +85, Ta = 0 to +70
Tc = ‐40 to +95, Ta = ‐40 to +85
Notes:
1. Tc = Operating case temperature at center of package.
2. Ta = Operating ambient temperature immediately above package center.
3. Both temperature specifications must be met.
AC and DC Logic Input Levels
Single‐ended DC Input Logic Level
Symbol
VIH(DC)
VIL(DC)
Parameter
DC input logic HIGH
DC input logic LOW
Min.
VREF + 0.125
‐ 0.3
Max.
VDDQ + 0.3 V
VREF ‐ 0.125
Units
V
V
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Single‐ended AC Input logic level
DDR2‐400, DDR2‐533
Min. Max.
VREF + 0.250 VDDQ + Vpeak
VSSQ ‐ Vpeak VREF ‐ 0.250
DDR2‐667, DDR2‐800
Symbol
Parameter
Units
Min.
Max.
VIH(AC)
VIL(AC)
AC input logic HIGH
AC input logic LOW
VREF + 0.200
VSSQ ‐ Vpeak
VDDQ + Vpeak
VREF ‐ 0.200
V
V
Note: Refer to Overshoot and Undershoot Specification for Vpeak value: maximum peak amplitude allowed for overshoot and undershoot.
AC Input Test Conditions
Symbol
VREF
VSWING(Max)
SLEW
Notes:
Condition
Input reference voltage
Input signal maximum peak to peak swing
Input signal minimum slew rate
Value
0.5 x VDDQ
1.0
Units
V
V
Notes
1
1
1.0
V/ns
2, 3
1. Input waveform timing is referenced to the input signal crossing through the VIH/IL(AC) level applied to the device under test.
2. The input signal minimum slew rate is to be maintained over the range from VREF to VIH(AC) min for rising edges and the range from VREF to VIL(AC) max for
falling edges as shown in the below figure.
3. AC timings are referenced with input waveforms switching from VIL(AC) to VIH(AC) on the positive transitions and VIH(AC) to VIL(AC) on the negative transitions.
AC Input Test Signal Waveform
V
V
V
V
V
V
V
DDQ
IH(ac)
IH(dc)
REF
min
min
V
SWING(MAX)
max
max
IL(dc)
IL(ac)
SS
Δ
TF
Δ
TR
V
min - V
V
-
V
max
IL(ac)
IH(ac)
REF
REF
Falling Slew =
Rising Slew =
ΔTR
ΔTF
Differential Input AC logic level
Symbol
Parameter
Min.
Max.
Units
Notes
VIH(AC)
VIL(AC)
AC input logic HIGH
AC input logic LOW
VREF + 0.250
VSSQ ‐ Vpeak
VDDQ + Vpeak
VREF ‐ 0.250
V
V
1
2
Notes:
1. VID(AC) specifies the input differential voltage |VTR ‐VCP | required for switching, where VTR is the true input signal (such as CK, DQS, LDQS or UDQS) and VCP
is the complementary input signal (such as CK#, DQS#, LDQS# or UDQS#). The minimum value is equal to V IH(AC) ‐ V IL(AC).
2. The typical value of VIX(AC) is expected to be about 0.5 x VDDQ of the transmitting device and VIX(AC) is expected to track variations in VDDQ. VIX(AC) indicates
the voltage at which differential input signals must cross.
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Differential Signal Level Waveform
V
V
DDQ
V
TR
Crossing point
V
ID
V
V
IX or OX
V
CP
SSQ
Differential AC Output Parameters
Symbol
VOX(AC)
Parameter
AC differential crosspoint voltage
Min.
0.5 x VDDQ‐0.125
Max.
0.5 x VDDQ+0.125
Units
V
Note: The typical value of VOX(AC) is expected to be about 0.5 x VDDQ of the transmitting device and VOX(AC) is expected to track variations in VDDQ. VOX(AC)
indicates the voltage at which differential output signals must cross.
Overshoot and Undershoot Specification
AC Overshoot and Undershoot Specification for Address and Control Pins
Parameter
DDR2‐400
0.9
DDR2‐533
0.9
DDR2‐667
0.9
DDR2‐800
0.9
Unit
V
V
V‐ns
V‐ns
Maximum peak amplitude allowed for overshoot area
Maximum peak amplitude allowed for undershoot area
Maximum overshoot area above VDD*
Maximum undershoot area below VSS*
Note: Please refer to AC Overshoot and Undershoot Definition Diagram.
0.9
1.33
1.33
0.9
1.00
1.00
0.9
0.80
0.80
0.9
0.66
0.66
AC Overshoot and Undershoot Specification for Clock, Data, Strobe and Mask Pins
Parameter
DDR2‐400
0.9
DDR2‐533
0.9
DDR2‐667
0.9
DDR2‐800
0.9
Unit
V
V
V‐ns
V‐ns
Maximum peak amplitude allowed for overshoot area
Maximum peak amplitude allowed for undershoot area
Maximum overshoot area above VDDQ*
Maximum undershoot area below VSSQ*
Note: Please refer to AC Overshoot and Undershoot Definition Diagram.
0.9
0.38
0.38
0.9
0.28
0.28
0.9
0.23
0.23
0.9
0.18
0.18
AC Overshoot and Undershoot Definition Diagram
Maximum Amplitude
Overshoot Area
Undershoot Area
V
V
DD/VDDQ
SS/VSSQ
Volts
(V)
Maximum Amplitude
Time (ns)
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Output Buffer Characteristics
Output AC Test Conditions
Symbol
VOTR
Parameter
Output Timing Measurement Reference Level
SSTL_18
0.5 x VDDQ
Units
V
Note: The VDDQ of the device under test is referenced.
Output DC Current Drive
Symbol
IOH(DC)
IOL(DC)
Notes:
Parameter
Output Minimum Source DC Current
Output Minimum Sink DC Current
SSTL_18
13.4
‐13.4
Units
mA
mA
Notes
1, 3, 4
2, 3, 4
1. VDDQ = 1.7 V; VOUT = 1420 mV. (VOUT ‐ VDDQ)/IOH must be less than 21 Ω for values of VOUT between VDDQ and VDDQ ‐ 280 mV.
2. VDDQ = 1.7 V; VOUT = 280 mV. VOUT/IOL must be less than 21 Ω for values of VOUT between 0 V and 280 mV.
3. The DC value of VREF applied to the receiving device is set to VTT
4. The values of IOH(DC) and IOL(DC) are based on the conditions given in Notes 1 and 2. They are used to test device drive current capability to ensure VIH(Min)
plus a noise margin and VIL(Max) minus a noise margin are delivered to an SSTL_18 receiver. The actual current values are derived by shifting the desired driver
operating point (see Section 3.3 of JESD8‐15A) along a 21 Ω load line to define a convenient driver current for measurement.
OCD Default Characteristics
Description
Parameter
Min.
Nom.
Max.
Units
Notes
Normal 18 ohms
See full strength default driver characteristics
Output Impedance
ohms
1, 2
Output impedance step size for OCD calibration
Pull‐up and pull‐down mismatch
Output slew rate
0
0
1.5
4
ohms
ohms
V/ns
6
1, 2, 3
SOUT
1.5
5
1, 4, 5, 7, 8
Notes:
1. Absolute Specifications (TOPER; VDD = +1.8V ±0.1V, VDDQ = +1.8V ±0.1V). DRAM I/O specifications for timing, voltage, and slew rate are no longer applicable if
OCD is changed from default settings.
2. Impedance measurement condition for output source DC current: VDDQ = 1.7 V; VOUT = 1420 mV; (VOUT‐VDDQ)/IOH must be less than 23.4 Ω for values of
VOUT between VDDQ and VDDQ ‐ 280 mV. Impedance measurement condition for output sink DC current: VDDQ = 1.7 V; VOUT = 280 mV; VOUT/IOL must be
less than 23.4 Ω for values of VOUT between 0 V and 280 mV.
3. Mismatch is absolute value between pull‐up and pull‐down, both are measured at same temperature and voltage.
4. Slew rate measured from VIL(AC) to VIH(AC).
5. The absolute value of the slew rate as measured from DC to DC is equal to or greater than the slew rate as measured from AC to AC. This is guaranteed by
design and characterization.
6. This represents the step size when the OCD is near 18 Ω at nominal conditions across all process corners/variations and represents only the DRAM uncertainty.
A 0 Ω value (no calibration) can only be achieved if the OCD impedance is 18 Ω ±0.75 Ω under nominal conditions.
7. DRAM output slew rate specification applies to 667 MT/s speed bins.
8. Timing skew due to DRAM output slew rate mismatch between DQS/DQS# and associated DQ’s is included in tDQSQ and tQHS specification.
Output Capacitance
‐5B (DDR2‐400B)/
‐37C (DDR2‐533C)
‐25E (DDR2‐800E)/
‐25D (DDR2‐800D)
‐3D (DDR2‐667D)
Paramater
Symbol
CCK
CDCK
CI
Units
pF
pF
Min
1.00
Max
2.00
0.25
2.00
Min
1.00
Max
2.00
0.25
2.00
Min
1.00
Max
2.00
0.25
1.75
Input Capacitance (CK and CK#)
Input Capacitance Delta (CK and CK#)
Input Capacitance (all other input‐only pins)
Input Capacitance Delta (all other input‐only
pins)
1.00
2.50
1.00
2.50
1.00
2.50
pF
CDI
0.25
0.25
0.25
pF
I/O Capacitance (DQ, DM, DQS, DQS#)
I/O Capacitance Delta (DQ, DM, DQS, DQS#)
CIO
CDIO
4.00
0.50
3.50
0.50
3.50
0.50
pF
pF
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ODT DC Electrical Characteristics
Parameter/Condition
Symbol
Rtt1(eff)
Rtt2(eff)
Rtt3(eff)
deltaVM
Units
ohms
ohms
ohms
%
Notes
Min.
60
120
40
Nom.
75
150
50
Max.
90
180
60
Rtt effective impedance value for EMRS(A6=0, A2=1); 75 ohm
Rtt effective impedance value for EMRS(A6=1, A2=0); 150 ohm
Rtt effective impedance value for EMRS(A6=A2=1); 50 ohm
1
1
1
2
Deviation of VM with respect to VDDQ/2
‐6
+6
Note:
1. Measurement Definition for Rtt(eff):
Apply VIH(AC) and VIL(AC) to test pin seperately, then measure current I(VIH(AC)) and I(VIL(AC)) respectively
VIH(AC) − VIL(AC)
Rtt(eff) =
I(VIH(AC)) −I(VIL(AC))
2. Measurement Defintion for VM:
Measure voltage (VM) at test pin (midpoint) with no load:
2x VM
VDDQ
⎛
⎜
⎞
ΔVM=
−1 x100%
⎟
⎝
⎠
ODT AC Electrical Characteristics and Operating Conditions
Symbol Parameter/Condition
Min.
Max.
Units
Notes
tAOND ODT turn‐on delay
2
2
tCK
ns
tAON
ODT turn‐on
tAC(Min)
tAC(Max)+1ns
1
3
tAONPD ODT turn‐on (Power‐Down Mode)
tAOFD ODT turn‐off delay
tAC(Min)+2 ns
2tCK+tAC(Max)+1ns
2.5
tAC(Max)+0.6ns
2.5tCK+tAC+1ns
ns
tCK
ns
ns
tCK
tCK
2.5
tAC(Min)
tAC(Min)+2ns
tAOF
ODT turn‐off
2
3
4
4
tAOFPD ODT turn‐off (Power‐Down Mode)
tANPD ODT to Power‐Down Mode Entry L:atency
3
8
tAXPD
ODT Power Down Exit Latency
Notes:
1. ODT turn on time min is when the de vice leaves high impedance and ODT resistance begins to turn on. ODT turn on time max is when the ODT resistance is fully
on. Both are measured from t AOND.
2.
ODT turn off time min is when the device starts to turn‐off ODT resistance. ODT turn off time max is when the bus is in high impedance. Both are measured from
tAOFD.
3.
For Standard Active Power‐Down (with MR S A12 = “0”), the non power ‐down timings (tAOND, tAON, tAOFD and tAOF) apply.
4. tANPD an d tAXPD define the timing limit when either Power Down Mode Timings (tAONPD, tAOFPD) or Non‐Power Down Mode timings ( tAOND, tAOFD) have
to be applied
Integrated Silicon Solution, Inc. – www.issi.com –
18
Rev. 00A, 11/17/2009
IS43DR86400, IS43/46DR16320
IDD Specifications and Conditions
IDD Measurement Conditions
Symbol Parameter/Condition
Operating Current ‐ One bank Active ‐ Precharge:
tRC = tRCmin; tCK =tCKmin ; Databus inputs are SWITCHING; Address and control inputs are SWITCHING, CS# = HIGH between valid commands.
IDD0
Operating Current ‐ One bank Active ‐ Read ‐ Precharge:
IDD1 One bank is accessed with tRCmin, BL = 4, tCK = tCKmin, AL = 0, CL = CLmin; Address bus and control inputs are SWITCHING,CS# = HIGH between valid
commands; lOUT = 0 mA.
Precharge Power‐Down Current:
All banks idle; power‐down mode; CKE is LOW; tCK = tCKmin; Data Bus inputs are FLOATING.
IDD2P
Precharge Standby Current:
IDD2N
All banks idle; CS# is HIGH; CKE is HIGH; tCK = tCKmin; Address bus, data bus, and control inputs are SWITCHING.
Precharge Quiet Standby Current:
All banks idle; CS# is HIGH; CKE is HIGH; tCK = tCKmin; Address bus and control inputs are STABLE; Data Bus inputs are FLOATING.
IDD2Q
Active Power‐Down Current:
IDD3Pf
All banks open; CKE is LOW; Address bus and control inputs are STABLE; Data Bus inputs are FLOATING. MRS A12 bit is set to “0”(Fast Power‐down Exit).
Active Power‐Down Current:
IDD3Ps
All banks open; CKE is LOW; Address bus and control inputs are STABLE; Data Bus inputs are FLOATING. MRS A12 bit is set to “1”(Slow Power‐down Exit).
Active Standby Current:
IDD3N
All banks open; CS# is HIGH; CKE is HIGH; tRC = tRASmax; tCK = tCKmin; Address bus, data bus, and control inputs are SWITCHING.
Operating Current ‐ Burst Read:
IDD4R
All banks active; continuous burst reads; BL = 4; AL = 0, CL = CLmin; tCK = tCKmin; Address bus, data bus, and control inputs are SWITCHING; IOUT = 0mA.
Operating Current ‐ Burst Write:
IDD4W
All banks active; continuous burst writes; BL = 4; AL = 0, CL = CLmin; tCK = tCKmin; Address bus, data bus, and control inputs are SWITCHING; IOUT = 0mA.
Burst Auto‐Refresh Current:
Refresh command at tRFC = tRFCmin, tCK = tCKmin, CS# is HIGH between valid commands.
IDD5B
Self‐Refresh Current:
IDD6
CKE 0.2V; external clock off, CK and CK# at 0V; tCK = tCKmin; Address bus, data bus, and control inputs, are FLOATING.
Operating Bank Interleave Read Current:
1. All bank interleaving with BL = 4; BL = 4, CL = CLmin; tRCD = tRCDmin; tRRD = tRRDmin; AL = tRCD ‐ 1, IOUT = 0 mA. Address and control inputs are
stable during DESELECT; Data Bus inputs are SWITCHING.
2.
Timing pattern:
a. DDR2 ‐400 (200Mhz, CL=3) : tCK = 5 ns, BL = 4, tRCD = 3 x tCK, AL = 2 x tCK, tRC = 12 x tCK
Read : A0 RA0 A1 RA1 A2 RA2 A3 RA3 D D D D
IDD7
b. DDR2 ‐533 (266Mhz, CL=4) : tCK = 3.7 ns, BL = 4, tRCD = 4 x tCK, AL = 3 x tCK, tCK = 16 x tCK
Read : A0 RA0 D A1 RA1 D A2 RA2 D A3 RA3 D D D D D
c.
DDR2 ‐667 (333Mhz, CL=4) :tCK = 3 ns, BL = 4, tRCD = 4 x tCK, AL = 3 x tCK, tRC = 19 x tCK
Read : A0 RA0 D D A1 RA1 D D A2 RA2 D D A3 RA3 D D D D D
Notes:
1. Data Bus consists of DQ, DM, DQS, DQS#, RDQS, RDQS#, LDQS, LDQS#, UDQS and UDQS#.
2. Definitions for IDD :
a.
b. HIGH is defined as VIN ≥ VIHAC(Min).
c. STABLE is defined as inputs are stable at a HIGH or LOW level.
d. FLOATING is defined as inputs are VREF.
LOW is defined as VIN ≤ VILAC(Max).
e.
SWITCHING is defined as inputs are changing between HIGH and LOW every other clock for address and control signals, and inputs changing 50% of
each data transfer for DQ signals.
3. Legend: A=Activate, RA=Read with Auto‐Precharge, D=DESELECT.
Integrated Silicon Solution, Inc. – www.issi.com –
19
Rev. 00A, 11/17/2009
IS43DR86400, IS43/46DR16320
IDD Specifications
Symbol
Configuration
‐5B
‐37C
‐3D
‐25E
‐25D
Units
x8
80
90
80
90
90
95
100
105
105
150
8
100
105
105
150
8
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
IDD0
x16
x8
90
90
95
IDD1
x16
x8/x16
x8
130
8
135
8
140
8
IDD2P
IDD2N
35
45
50
55
55
x16
x8
45
50
55
60
60
30
40
45
50
50
IDD2Q
x16
x8/x16
x8/x16
x8
40
45
50
55
55
IDD3Pf
IDD3Ps
30
30
35
35
35
12
12
12
12
12
50
55
60
66
66
IDD3N
IDD4R
IDD4W
x16
x8
50
60
65
72
72
130
200
140
210
160
8
150
220
170
250
170
8
180
250
190
280
180
8
210
275
220
300
200
8
210
275
220
300
200
8
x16
x8
x16
x8/x16
x8/x16
x8
IDD5B
IDD6
220
330
220
335
220
340
270
350
270
350
IDD7
x16
Integrated Silicon Solution, Inc. – www.issi.com –
20
Rev. 00A, 11/17/2009
IS43DR86400, IS43/46DR16320
AC Characteristics
(AC Operating Conditions Unless Otherwise Noted)
‐5B
‐37C
‐3D
‐25E
‐25D
DDR2‐400B DDR2‐533C DDR2‐667D DDR2‐800E DDR2‐800D
Parameter
Symbol
Units Notes
Min Max Min Max Min Max Min Max Min Max
Row Cycle Time
tRC
tRFC
tRAS
55
105
40
60
105
45
60
105
45
60
105
45
57.25
105
45
ns
Auto Refresh Row Cycle Time
Row Active Time
ns
ns
11
21
70K
70K
70K
70K
70K
Row Actvie to Column Address
Delay
tRCD
15
15
15
15
12.5
ns
20
tRRD(x8) 7.5
tRRD(x16) 10
7.5
10
7.5
10
7.5
10
7.5
10
ns
ns
Row Active to Row Active Delay
Column Address to Column
Address Delay
tCCD
2
2
2
2
2
tCK
Row Precharge Time
Write Recovery Time
tRP
15
15
15
15
15
15
15
15
15
15
ns
ns
tWR
Auto precharge Write recovery +
Precharge Time
tDAL
Min = tWR+tRP, Max = n/a
ns
12
tCK3 (CL=3)
tCK4 (CL=4)
tCK5 (CL=5)
tCK6 (CL=6)
tCH
5
5
5
5
8
8
8
8
5
8
8
8
8
5
3.75
3
8
8
8
8
5
3.75
3
8
8
8
8
5
8
8
8
8
ns
ns
ns
ns
2
2
2
3.75
3.75
3.75
3.75
2.5
2.5
Clock Cycle Time
3
2.5
Clock High Level Width
Clock Low Level Width
0.45 0.55 0.45 0.55 0.45 0.55 0.45 0.55 0.45 0.55 tCK
0.45 0.55 0.45 0.55 0.45 0.55 0.45 0.55 0.45 0.55 tCK
tCL
Data‐Out Edge to Clock Skew
Edge
DQS‐Out Edge to Clock Skew
Edge
DQS‐Out Edge to Clock Skew
Edge
tAC
tDQSCK
tDQSQ
tQH
‐0.6
‐0.5
0.6
‐0.5
0.5 ‐0.45 0.45 ‐0.4
0.4
‐0.4
0.4
ns
0.5 ‐0.45 0.45 ‐0.4
0.4 ‐0.35 0.35 ‐0.35 0.35 ns
0.35
450
0.3
0.24
0.2
0.2
ns
ns
Data‐Out Hold Time from DQS
Min = tHP(min)‐tQHS, Max = n/a
400 340
Data Hold Skew Factor
Clock Half Period
tQHS
tHP
300
300
ps
ns
Min = tCH(min)/tCL(min), Max = n/a
5
Input Setup Time (fast slew rate)
Input Hold Time (fast slew rate)
tIS
350
475
250
375
200
275
175
250
175
250
ps 15,17
ps 15,17
tIH
Input Pulse Width
Write DQS High Level Width
Write DQS Low Level Width
tIPW
tDQSH
tDQSL
0.6
0.35
0.35
0.6
0.35
0.35
0.6
0.35
0.35
0.6
0.35
0.35
0.6
0.35
0.35
tCK
tCK
tCK
CLK to First Rising Edge of DQS‐
In
Data‐In Setup Time to DQS‐In
(DQ, DM)
tDQSS
tDS
Min = WL‐0.25tCK, Max = WL+0.25tCK
100 50 50
tCK
150
50
ps 16,17,18
Integrated Silicon Solution, Inc. – www.issi.com –
21
Rev. 00A, 11/17/2009
IS43DR86400, IS43/46DR16320
AC Characteristics
(AC Operating Conditions Unless Otherwise Noted)
‐5B
‐37C
‐3D
‐25E
‐25D
DDR2‐400B DDR2‐533C DDR2‐667D DDR2‐800E DDR2‐800D
Parameter
Symbol
Units Notes
Min Max Min Max Min Max Min Max Min Max
Data‐In Hold Time to DQS‐In
(DQ, DM)
DQS falling edge from CLK rising
Setup Time
DQS falling edge from CLK rising
Hold Time
tDH
tDSS
tDSH
275
0.2
0.2
225
0.2
0.2
175
0.2
0.2
125
0.2
0.2
125
0.2
0.2
ps 16,17,18
tCK
tCK
tCK
DQ & DM Pulse Width
tDIPW
tRPRE
tRPST
0.35
0.9
0.4
0.35
0.9
0.4
0.35
0.9
0.4
0.35
0.9
0.4
0.35
0.9
0.4
Read DQS Preamble Time
Read DQS Postamble Time
1.1
0.6
1.1
0.6
1.1
0.6
1.1
0.6
1.1 tCK
0.6 tCK
Write DQS Preamble Setup Time tWPRES
0
0
0
0
0
tCK
Write DQS Preamble Hold Time tWPREH 0.25
0.25
0.4
0.25
0.4
0.25
0.4
0.25
0.4
tCK
0.6 tCK
ns
Write DQS Postamble Time
tWPST
tRTP
0.4
7.5
0.6
0.6
0.6
0.6
10
Internal Read to Precharge
Command Delay
7.5
7.5
7.5
7.5
Internal Write to Read
Command Delay
Data‐Out to High Impedance
from CK/CK#
Data‐Out to Low Impedance
from CK/CK#
Mode Register Set Delay
Exit Self refresh to Non‐Read
Command
tWTR
tHZ
10
2
7.5
7.5
7.5
7.5
ns
ns
13
7
Min = tAC(min), Max = tAC(max)
Min = tAC(min), Max = tAC(max)
tLZ
ns
tCK
ns
7
9
tMRD
tXSNR
2
2
2
2
Min = tRFC + 10, Max = n/a
19
Exit Self refresh to Read
Command
Exit Precharge Power Down to
any Non‐Read Command
Exit Active Power Down to Read
Command
tXSRD
tXP
200
2
200
2
200
2
200
2
200
2
tCK
tCK
tCK
14
tXARD
2
2
2
2
2
Exit Active Power Down to Read
Command (slow exit, low power)
tAXRDS
tOIT
Min = 6‐AL, Max = n/a
tCK
ODT Drive Mode Output Delay
0
12
0
3
12
0
12
0
12
0
3
12
ns
ns
Minimum time clocks remains
ON after CKE asynchronously
drops LOW
CKE minimum high and low
pulse width
tDELAY
tCKE
Min = tIS+tCK+tIH, Max = n/a
3
3
3
tCK
Integrated Silicon Solution, Inc. – www.issi.com –
22
Rev. 00A, 11/17/2009
IS43DR86400, IS43/46DR16320
AC Characteristics
(AC Operating Conditions Unless Otherwise Noted)
‐5B
‐37C
‐3D
‐25E
‐25D
DDR2‐400B DDR2‐533C DDR2‐667D DDR2‐800E DDR2‐800D
Parameter
Symbol
Units Notes
Min Max Min Max Min Max Min Max Min Max
Average Periodic Refresh
Interval (Tc = ‐40°C to +85° C)
Average Periodic Refresh
Interval (Tc = +85°C to +95° C)
Notes:
tREFI
tREFI
7.8
3.9
7.8
3.9
7.8
3.9
7.8
3.9
7.8
3.9
18
μs
μs
1. Input slew rate is 1 V/ns and AC timings are guaranteed for linear signal transitions.
2. The CK/CK# input reference level (for timing reference to CK/CK#) is the point at which CK and CK# cross the DQS/DQS# input reference level is the cross point
when in differential strobe mode; the input reference level for signals other than CK/CK#, or DQS/DQS# is VREF.
3. Inputs are not recognized as valid until VREF stabilizes. During the period before VREF stabilizes, CKE = 0.2 x VDDQ is recognized as LOW.
4. The output timing reference voltage level is VTT.
5. The values tCL(Min) and tCH(Min) refer to the smaller of the actual clock low time and the actual clock high time as provided to the device (i.e. this value can be
greater than the minimum specification limits for tCL and tCH.
6. For input frequency change during DRAM operation.
7. Transitions for tHZ and tLZ occur in the same access time windows as valid data transitions. These parameters are not referred to a specific voltage level, but
specify when the device is no longer driving (HZ), or begins driving (LZ).
8.
These parameters guarantee device timing, but they are not necessarily tested on each device.
9. The specific requirement is that DQS and DQS# be valid (HIGH, LOW, or some point on a valid transition) on or before this CK edge. A valid transition is defined
as monotonic and meeting the input slew rate specifications of the device. When no writes were previously in progress on the bus, DQS will be transitioning
from Hi‐Z to logic LOW. If a previous write was in progress, DQS could be HIGH, LOW, or transitioning from HIGH to LOW at this time, depending on tDQSS.
When programmed in differential strobe mode, DQS is always the logic complement of DQS except when both are in high‐Z.
10. The maximum limit for this parameter is not a device limit. The device operates with a greater value for this parameter, but system performance (bus
turnaround) degrades accordingly.
11. A maximum of eight Auto‐Refresh commands can be posted to any given DDR2 SDRAM device. (Note: tRFC depends on DRAM density)
12. For each of the terms, if not already an integer, round to the next highest integer. tCK refers to the application clock period. WR refers to the WR parameter
stored in the MRS.
13. Parameter tWTR is at least two clocks independent of operation frequency.
14. User can choose two different active power‐down modes for additional power saving via MRS address bit A12. In “standard active power‐down mode” (MRS,
A12 = “0”) a fast power‐down exit timing tXARD can be used. In “low active power‐down mode” (MRS, A12 =”1”) a slow power‐down exit timing tXARDS has to
be satisfied.
15. Timings are guaranteed with command / address input slew rate of 1.0 V/ns.
16. Timings are guaranteed with data / mask input slew rate of 1.0 V/ns.
17. Timings are guaranteed with CK/CK# differential slew rate 2.0 V/ns, and DQS/DQS# (and RDQS/RDQS#) differential slew rate 2.0 V/ns in differential strobe
mode.
18. If refresh timing or tDS/tDH is violated, data corruption may occur and the data must be re‐written with valid data before a valid READ can be executed.
19. In all circumstances, tXSNR can be satisfied using tXSNR = tRFC + 10 ns.
20. The tRCD timing parameter is valid for both activate command to read or write command with and without Auto‐Precharge. Therefore a separate parameter
tRAP for activate command to read or write command with Auto‐Precharge is not necessary anymore.
21. tRAS(max) is calculated from the maximum amount of time a DDR2 device can operate without a Refresh command which is equal to 9 x tREFI.
Integrated Silicon Solution, Inc. – www.issi.com –
23
Rev. 00A, 11/17/2009
IS43DR86400, IS43/46DR16320
Reference Loads, Slew Rates and Slew Rate Derating
1. Reference Load for Timing Measurements
Figure AC Timing Reference Load represents the timing reference load used in defining the relevant timing parameters of the part. It
is not intended to be either a precise representation of the typical system environment or a depiction of the actual load presented
by a production tester. System designers will use IBIS or other simulation tools to correlate the timing reference load to a system
environment. Manufacturers correlate to their production test conditions (generally a coaxial transmission line terminated at the
tester electronics). This load circuit is also used for output slew rate measurements.
AC Timing Reference Load
VDDQ
DQ
DQS
CK, CK#
DQS#
RDQS
DUT
VTT=VDDQ/2
25Ω
RDQS#
Timing
Reference
Points
The output timing reference voltage level for single ended signals is the crosspoint with VTT. The output timing reference voltage
level for differential signals is the crosspoint of the true (e.g. DQS) and the complement (e.g. DQS#) signal.
2. Slew Rate Measurements
a) Output Slew Rate
Output slew rate is characterized under the test conditions as shown in the figure below.
Output slew rate for falling and rising edges is measured between VTT ‐ 250 mV and VTT + 250 mV for single ended signals. For
differential signals (e.g. DQS – DQS#) output slew rate is measured between DQS – DQS# = ‐ 500 mV and DQS – DQS# = + 500 mV.
Output slew rate is guaranteed by design, but is not necessarily tested on each device.
b) Input Slew Rate
Input slew rate for single ended signals is measured from VREF(DC) to VIH(AC),min for rising edges and from VREF(DC) to VIL(AC),min
for falling edges. For differential signals (e.g. CK – CK#) slew rate for rising edges is measured from CK – CK# = ‐ 250 mV to CK ‐ CK = +
500 mV (+ 250 mV to ‐ 500 mV for falling edges). Test conditions are the same as for timing measurements.
Integrated Silicon Solution, Inc. – www.issi.com –
24
Rev. 00A, 11/17/2009
IS43DR86400, IS43/46DR16320
ORDERING INFORMATION
Commercial Range: TC = 0° to +85°C; TA = 0°C to +70°C
Frequency
Speed Grade
CL‐tRC‐tRP
4‐4‐4
Order Part No.
Organization
64Mb x 8
Package
266 MHz
DDR2‐533C
IS43DR86400‐37CBL
IS43DR16320‐37CBL
IS43DR86400‐3DBL
IS43DR16320‐3DBL
IS43DR86400‐25EBL
IS43DR16320‐25EBL
IS43DR86400‐25DBL
IS43DR16320‐25DBL
60‐ball FBGA, lead free
84‐ball FBGA, lead free
60‐ball FBGA, lead free
84‐ball FBGA, lead free
60‐ball FBGA, lead free
84‐ball FBGA, lead free
60‐ball FBGA, lead free
84‐ball FBGA, lead free
32Mb x 16
64Mb x 8
333 MHz
400 MHz
400 MHz
DDR2‐667D
DDR2‐800E
DDR2‐800D
5‐5‐5
6‐6‐6
5‐5‐5
32Mb x 16
64Mb x 8
32Mb x 16
64Mb x 8
32Mb x 16
Notes:
Please contact ISSI for availability of leaded BGA options.
Please contact ISSI for availability of x8 options.
The ‐37C part is backward compatible with the slower speed grade ‐5B part.
Integrated Silicon Solution, Inc. – www.issi.com –
25
Rev. 00A, 11/17/2009
IS43DR86400, IS43/46DR16320
ORDERING INFORMATION
Industrial Range: TC = − 40°C to +95°C; TA = − 40°C to +85°C
Frequency
Speed Grade
CL‐tRC‐tRP
4‐4‐4
Order Part No.
Organization
64Mb x 8
Package
266 MHz
DDR2‐533C
IS43DR86400‐37CBLI
IS43DR16320‐37CBLI
IS43DR86400‐3DBLI
IS43DR16320‐3DBLI
IS43DR86400‐25EBLI
IS43DR16320‐25EBLI
IS43DR86400‐25DBLI
IS43DR16320‐25DBLI
60‐ball FBGA, lead free
84‐ball FBGA, lead free
60‐ball FBGA, lead free
84‐ball FBGA, lead free
60‐ball FBGA, lead free
84‐ball FBGA, lead free
60‐ball FBGA, lead free
84‐ball FBGA, lead free
32Mb x 16
64Mb x 8
333 MHz
400 MHz
400 MHz
DDR2‐667D
DDR2‐800E
DDR2‐800D
5‐5‐5
6‐6‐6
5‐5‐5
32Mb x 16
64Mb x 8
32Mb x 16
64Mb x 8
32Mb x 16
Notes:
Please contact ISSI for availability of leaded BGA options.
Please contact ISSI for availability of x8 options.
The ‐37C part is backward compatible with the slower speed grade ‐5B part.
Integrated Silicon Solution, Inc. – www.issi.com –
26
Rev. 00A, 11/17/2009
IS43DR86400, IS43/46DR16320
ORDERING INFORMATION
Automotive Range, A1: TC = − 40°C to +95°C; TA = − 40°C to +85°C
Frequency
266 MHz
333 MHz
Speed Grade
DDR2‐533C
DDR2‐667D
CL‐tRC‐tRP
4‐4‐4
Order Part No.
Organization
32Mb x 16
32Mb x 16
Package
IS46DR16320‐37CBLA1
IS46DR16320‐3DBLA1
84‐ball FBGA, lead free
84‐ball FBGA, lead free
5‐5‐5
Notes:
Please contact ISSI for availability of leaded BGA options.
Integrated Silicon Solution, Inc. – www.issi.com –
27
Rev. 00A, 11/17/2009
IS43DR86400, IS43/46DR16320
PACKAGE OUTLINE DRAWING
60-ball FBGA: Fine Pitch Ball Grid Array Outline (x8)
Integrated Silicon Solution, Inc. – www.issi.com –
28
Rev. 00A, 11/17/2009
IS43DR86400, IS43/46DR16320
PACKAGE OUTLINE DRAWING
84-ball FBGA: Fine Pitch Ball Grid Array Outline (x16)
Integrated Silicon Solution, Inc. – www.issi.com –
29
Rev. 00A, 11/17/2009
相关型号：
IS46DR16320-3DBLA1
DDR DRAM, 32MX16, CMOS, PBGA84, 13 X 10.50 MM, 0.80 MM PITCH, LEAD FREE, MO-207, FBGA-84
ISSI
IS46DR16320B-37CBLA1-TR
DDR DRAM, 32MX16, 0.5ns, CMOS, PBGA84, 10.50 X 13 MM, 1.20 MM HEIGHT, 0.80 MM PITCH, LEAD FREE, TMO-207, TWBGA-84
ISSI
IS46DR16320B-3DBLA1-TR
DDR DRAM, 32MX16, 0.45ns, CMOS, PBGA84, 10.50 X 13 MM, 1.20 MM HEIGHT, 0.80 MM PITCH, LEAD FREE, TMO-207, TWBGA-84
ISSI
IS46DR16320B-3DBLA2-TR
DDR DRAM, 32MX16, 0.45ns, CMOS, PBGA84, 10.50 X 13 MM, 1.20 MM HEIGHT, 0.80 MM PITCH, LEAD FREE, TMO-207, TWBGA-84
ISSI
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