IS61C256AH-15N [ISSI]
32K x 8 HIGH-SPEED CMOS STATIC RAM; 32K ×8高速CMOS静态RAM
| 型号： | IS61C256AH-15N |
| 厂家： | 
INTEGRATED SILICON SOLUTION, INC |
| 描述： | 32K x 8 HIGH-SPEED CMOS STATIC RAM |
| 文件： | 总8页 (文件大小：64K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
®
ISSI
IS61C256AH
32K x 8 HIGH-SPEED CMOS STATIC RAM
MAY 1999
FEATURES
DESCRIPTION
The ISSI IS61C256AH is a very high-speed, low power,
32,768 word by 8-bit static RAMs. They are fabricated using
ISSI's high-performance CMOS technology. This highly reli-
able process coupled with innovative circuit design tech-
niques, yields access times as fast as 10 ns maximum.
• High-speed access time: 10, 12, 15, 20, 25 ns
• Low active power: 400 mW (typical)
• Low standby power
— 250 µW (typical) CMOS standby
— 55 mW (typical) TTL standby
WhenCEisHIGH(deselected), thedeviceassumesastandby
mode at which the power dissipation can be reduced down to
250 µW (typical) with CMOS input levels.
• Fully static operation: no clock or refresh
required
• TTL compatible inputs and outputs
• Single 5V power supply
Easy memory expansion is provided by using an active LOW
ChipEnable(CE)inputandanactiveLOWOutputEnable(OE)
input. The active LOW Write Enable (WE) controls both writing
and reading of the memory.
The IS61C256AH is pin compatible with other 32K x 8 SRAMs
and are available in 28-pin PDIP, SOJ, and TSOP (Type I)
packages.
FUNCTIONAL BLOCK DIAGRAM
32K X 8
MEMORY ARRAY
A0-A14
DECODER
VCC
GND
I/O
DATA
COLUMN I/O
I/O0-I/O7
CIRCUIT
CE
CONTROL
CIRCUIT
OE
WE
ISSI reserves the right to make changes to its products at any time without notice in order to improve design and supply the best possible product. We assume no responsibility for any errors which
may appear in this publication. © Copyright 1999, Integrated Silicon Solution, Inc.
Integrated Silicon Solution, Inc. — 1-800-379-4774
SR020-1O
05/24/99
1
®
ISSI
IS61C256AH
PIN CONFIGURATION
28-Pin DIP and SOJ
PIN CONFIGURATION
28-Pin TSOP
A14
A12
A7
1
28
27
26
25
24
23
22
21
20
19
18
17
16
15
VCC
WE
A13
A8
OE
A11
A9
22
23
24
25
26
27
28
1
21
20
19
18
17
16
15
14
13
12
11
10
9
A10
CE
2
I/O7
I/O6
I/O5
I/O4
I/O3
GND
I/O2
I/O1
I/O0
A0
3
A8
A6
4
A13
WE
VCC
A14
A12
A7
A6
A5
A4
A3
A5
5
A9
A4
6
A11
OE
A3
7
2
A2
8
A10
CE
3
4
A1
9
5
A0
10
11
12
13
14
I/O7
I/O6
I/O5
I/O4
I/O3
6
A1
A2
I/O0
I/O1
I/O2
GND
7
8
PIN DESCRIPTIONS
TRUTH TABLE
Mode
WE
CE OE I/O Operation Vcc Current
A0-A14
CE
Address Inputs
Not Selected
(Power-down)
X
H
X
High-Z
ISB1, ISB2
Chip Enable Input
Output Enable Input
Write Enable Input
Bidirectional Ports
Power
OE
Output Disabled H
L
L
L
H
L
High-Z
DOUT
DIN
ICC
ICC
ICC
WE
Read
Write
H
L
I/O0-I/O7
Vcc
X
GND
Ground
ABSOLUTE MAXIMUM RATINGS(1)
Symbol Parameter
Value
Unit
V
VTERM
TBIAS
TSTG
PT
Terminal Voltage with Respect to GND
Temperature Under Bias
Storage Temperature
–0.5 to +7.0
–55 to +125
–65 to +150
1.5
°C
°C
W
Power Dissipation
IOUT
DC Output Current (LOW)
20
mA
Note:
1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause
permanent damage to the device. This is a stress rating only and functional operation of the
device at these or any other conditions above those indicated in the operational sections of
thisspecificationisnotimplied.Exposuretoabsolutemaximumratingconditionsforextended
periods may affect reliability.
2
Integrated Silicon Solution, Inc. — 1-800-379-4774
SR020-1O
05/24/99
®
ISSI
IS61C256AH
OPERATING RANGE
Range
Ambient Temperature
Speed
VCC
Commercial
0°C to +70°C
-10, -12
5V ± 5%
-15, -20, -25
5V ± 10%
Industrial
–40°C to +85°C
-12
5V ± 5%
-15, -20, -25
5V ± 10%
DC ELECTRICAL CHARACTERISTICS (Over Operating Range)
Symbol Parameter
Test Conditions
Min.
2.4
—
Max.
Unit
V
VOH
VOL
VIH
VIL
ILI
Output HIGH Voltage
VCC = Min., IOH = –4.0 mA
VCC = Min., IOL = 8.0 mA
—
0.4
Output LOW Voltage
Input HIGH Voltage
Input LOW Voltage(1)
Input Leakage
V
2.2
–0.5
–5
VCC + 0.5
0.8
V
V
GND ≤ VIN ≤ VCC
Com.
5
µA
Ind. –10
10
ILO
Output Leakage
GND ≤ VOUT ≤ VCC,
Com.
–5
5
µA
Outputs Disabled
Ind. –10
10
Note:
1. VIL = –3.0V for pulse width less than 10 ns.
POWER SUPPLY CHARACTERISTICS(1) (Over Operating Range)
-10
-12
-15
-20
-25
Symbol
Parameter
Test Conditions
CC = Max., CE = VIL
OUT = 0 mA, f = fMAX
Min. Max. Min. Max. Min. Max. Min. Max. Min. Max. Unit
ICC
Vcc Dynamic Operating
Supply Current
V
I
Com.
Ind.
—
—
165
—
—
—
155
165
—
—
145
155
—
—
135
145
—
—
125
135
mA
I
SB
SB
1
TTL Standby Current
(TTL Inputs)
V
V
CC = Max.,
IN = VIH or VIL
Com.
Ind.
—
—
25
—
—
—
25
30
—
—
25
30
—
—
25
30
—
—
25
30
mA
CE ≥ VIH, f = 0
CC = Max.,
CE ≥ VCC – 0.2V,
I
2
CMOS Standby
Current (CMOS Inputs)
V
Com.
Ind.
—
—
2
—
—
—
2
10
—
—
2
10
—
—
2
10
—
—
2
10
mA
V
V
IN ≥ VCC – 0.2V, or
IN ≤ 0.2V, f = 0
Note:
1. At f = fMAX, address and data inputs are cycling at the maximum frequency, f = 0 means no input lines change.
CAPACITANCE(1,2)
Symbol
CIN
Parameter
Conditions
VIN = 0V
Max.
8
Unit
pF
Input Capacitance
Output Capacitance
COUT
VOUT = 0V
10
pF
Notes:
1. Tested initially and after any design or process changes that may affect these parameters.
2. Test conditions: TA = 25°C, f = 1 MHz, Vcc = 5.0V.
Integrated Silicon Solution, Inc. — 1-800-379-4774
SR020-1O
05/24/99
3
®
ISSI
IS61C256AH
READ CYCLE SWITCHING CHARACTERISTICS(1) (Over Operating Range)
-10
-12
-15
-20
-25
Symbol
Parameter
Min. Max
Min. Max.
Min. Max.
Min. Max.
Min. Max.
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
t
t
t
t
t
t
t
t
t
t
t
RC
Read Cycle Time
Address Access Time
Output Hold Time
CE Access Time
OE Access Time
OE to Low-Z Output
OE to High-Z Output
CE to Low-Z Output
CE to High-Z Output
CE to Power-Up
10
—
2
—
10
—
10
5
12
—
2
—
12
—
12
5
15
—
2
—
15
—
15
7
20
—
2
—
20
—
20
8
25
—
2
—
25
—
25
9
AA
OHA
ACE
DOE
LZOE
—
—
0
—
—
0
—
—
0
—
—
0
—
—
0
(2)
(2)
—
5
—
6
—
7
—
9
—
10
—
10
—
20
HZOE
—
2
—
3
—
3
—
3
—
3
(2)
LZCE
—
5
—
7
—
8
—
9
(2)
HZCE
—
0
—
0
—
0
—
0
—
0
(3)
PU
—
10
—
12
—
15
—
18
(3)
PD
CE to Power-Down
—
—
—
—
—
Notes:
1. Test conditions assume signal transition times of 5 ns or less, timing reference levels of 1.5V, input pulse levels of
0 to 3.0V and output loading specified in Figure 1.
2. Tested with the load in Figure 2. Transition is measured ±500 mV from steady-state voltage. Not 100% tested.
3. Not 100% tested.
AC TEST CONDITIONS
Parameter
Unit
0V to 3.0V
3 ns
Input Pulse Level
Input Rise and Fall Times
Input and Output Timing
and Reference Levels
1.5V
Output Load
See Figures 1 and 2
AC TEST LOADS
480 Ω
480 Ω
5V
5V
OUTPUT
OUTPUT
255 Ω
255 Ω
30 pF
Including
jig and
5 pF
Including
jig and
scope
scope
Figure 1
Figure 2
4
Integrated Silicon Solution, Inc. — 1-800-379-4774
SR020-1O
05/24/99
®
ISSI
IS61C256AH
AC WAVEFORMS
READ CYCLE NO. 1(1,2)
t
RC
ADDRESS
t
AA
t
OHA
t
OHA
DATA VALID
DOUT
PREVIOUS DATA VALID
READ1.eps
READ CYCLE NO. 2(1,3)
t
RC
ADDRESS
OE
t
AA
t
OHA
t
HZOE
t
DOE
t
t
LZOE
ACE
CE
t
HZCE
t
LZCE
HIGH-Z
DOUT
DATA VALID
CE_RD2.eps
Notes:
1. WE is HIGH for a Read Cycle.
2. The device is continuously selected. OE, CE = VIL.
3. Address is valid prior to or coincident with CE LOW transitions.
Integrated Silicon Solution, Inc. — 1-800-379-4774
SR020-1O
05/24/99
5
®
ISSI
IS61C256AH
WRITE CYCLE SWITCHING CHARACTERISTICS(1,3) (Over Operating Range)
-10
-12
-15
-20
-25
Symbol Parameter
Min. Max
Min. Max.
Min. Max.
Min. Max.
Min. Max.
Unit
ns
t
t
t
WC
SCE
AW
Write Cycle Time
CE to Write End
10
9
—
—
—
12
10
10
—
—
—
15
10
12
—
—
—
20
13
15
—
—
—
25
15
20
—
—
—
ns
Address Setup Time
to Write End
9
ns
t
HA
Address Hold
from Write End
0
—
0
—
0
—
0
—
0
—
ns
t
t
t
t
t
t
t
SA
Address Setup Time
0
8
—
—
—
—
—
6
0
8
—
—
—
—
—
6
0
10
8
—
—
—
—
—
7
0
13
10
10
0
—
—
—
—
—
8
0
15
12
12
0
—
—
—
—
—
10
—
ns
ns
ns
ns
ns
ns
ns
PWE
PWE
SD
1
2
WE Pulse Width (OE LOW)
WE Pulse Width (OE HIGH)
Data Setup to Write End
Data Hold from Write End
WE LOW to High-Z Output
WE HIGH to Low-Z Output
6.5
7
7
7
9
HD
0
0
0
(2)
HZWE
—
0
—
0
—
0
—
0
—
0
(2)
LZWE
—
—
—
—
Notes:
1. Test conditions assume signal transition times of 3 ns or less, timing reference levels of 1.5V, input pulse levels of 0 to 3.0V and
output loading specified in Figure 1.
2. Tested with the load in Figure 2. Transition is measured ±500 mV from steady-state voltage. Not 100% tested.
3. The internal write time is defined by the overlap of CE LOW and WE LOW. All signals must be in valid states to initiate a Write,
but any one can go inactive to terminate the Write. The Data Input Setup and Hold timing are referenced to the rising or falling
edge of the signal that terminates the write.
AC WAVEFORMS
WRITE CYCLE NO. 1 (WE Controlled)(1,2)
t
WC
VALID ADDRESS
SCE
ADDRESS
CE
t
SA
t
t
HA
t
AW
t
t
PWE1
PWE2
WE
t
HZWE
t
LZWE
HIGH-Z
DATA UNDEFINED
D
OUT
t
SD
t
HD
DATAIN VALID
DIN
CE_WR1.eps
6
Integrated Silicon Solution, Inc. — 1-800-379-4774
SR020-1O
05/24/99
®
ISSI
IS61C256AH
WRITE CYCLE NO. 2(OE is HIGH During Write Cycle) (1,2)
tWC
ADDRESS
OE
VALID ADDRESS
tHA
LOW
CE
WE
tAW
tPWE1
tSA
tHZWE
tLZWE
HIGH-Z
DATA UNDEFINED
DOUT
DIN
tSD
tHD
DATAIN VALID
CE_WR2.eps
WRITE CYCLE NO. 3(OE is LOW During Write Cycle) (1)
t
WC
ADDRESS
VALID ADDRESS
t
HA
LOW
LOW
OE
CE
t
t
AW
t
PWE2
WE
t
SA
HZWE
t
LZWE
HIGH-Z
DATA UNDEFINED
DOUT
t
SD
t
HD
DATAIN VALID
DIN
CE_WR3.eps
Notes:
1. The internal write time is defined by the overlap of CE LOW and WE LOW. All signals must be in valid states to initiate a Write,
but any one can go inactive to terminate the Write. The Data Input Setup and Hold timing are referenced to the rising or falling
edge of the signal that terminates the Write.
2. I/O will assume the High-Z state if OE ≥ VIH.
Integrated Silicon Solution, Inc. — 1-800-379-4774
SR020-1O
05/24/99
7
®
ISSI
IS61C256AH
ORDERING INFORMATION: IS61C256AH
ORDERING INFORMATION: IS61C256AH
Industrial Range: –40°C to +85°C
Commercial Range: 0°C to +70°C
Speed (ns) Order Part Number
Package
Speed (ns) Order Part Number
Package
12
15
20
25
IS61C256AH-12NI
IS61C256AH-12JI
IS61C256AH-12TI
300-mil Plastic DIP
300-mil Plastic SOJ
TSOP (Type 1)
10
12
15
20
25
IS61C256AH-10N
IS61C256AH-10J
IS61C256AH-10T
300-mil Plastic DIP
300-mil Plastic SOJ
TSOP (Type 1)
IS61C256AH-15NI
IS61C256AH-15JI
IS61C256AH-15TI
300-mil Plastic DIP
300-mil Plastic SOJ
TSOP (Type 1)
IS61C256AH-12N
IS61C256AH-12J
IS61C256AH-12T
300-mil Plastic DIP
300-mil Plastic SOJ
TSOP (Type 1)
IS61C256AH-20NI
IS61C256AH-20JI
IS61C256AH-20TI
300-mil Plastic DIP
300-mil Plastic SOJ
TSOP (Type 1)
IS61C256AH-15N
IS61C256AH-15J
IS61C256AH-15T
300-mil Plastic DIP
300-mil Plastic SOJ
TSOP (Type 1)
IS61C256AH-25NI
IS61C256AH-25JI
IS61C256AH-25TI
300-mil Plastic DIP
300-mil Plastic SOJ
TSOP (Type 1)
IS61C256AH-20N
IS61C256AH-20J
IS61C256AH-20T
300-mil Plastic DIP
300-mil Plastic SOJ
TSOP (Type 1)
IS61C256AH-25N
IS61C256AH-25J
IS61C256AH-25T
300-mil Plastic DIP
300-mil Plastic SOJ
TSOP (Type 1)
®
ISSI
Integrated Silicon Solution, Inc.
2231 Lawson Lane
Santa Clara, CA 95054
Tel: 1-800-379-4774
Fax: (408) 588-0806
E-mail: sales@issi.com
www.issi.com
8
Integrated Silicon Solution, Inc. — 1-800-379-4774
SR020-1O
05/24/99
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