IS62LV2568LL-70T [ISSI]
256K x 8 LOW POWER and LOW Vcc CMOS STATIC RAM; 256K ×8低功耗和低Vcc的CMOS静态RAM
| 型号： | IS62LV2568LL-70T |
| 厂家： | 
INTEGRATED SILICON SOLUTION, INC |
| 描述： | 256K x 8 LOW POWER and LOW Vcc CMOS STATIC RAM |
| 文件： | 总10页 (文件大小：64K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
®
IS62LV2568LL
256K x 8 LOW POWER and LOW Vcc
CMOS STATIC RAM
ISSI
APRIL 2000
FEATURES
DESCRIPTION
• Access times of 70 and 85 ns
The ISSI IS62LV2568LL is a low voltage, 262,144 words
• CMOS low power operation:
— 120 mW (typical) operating
— 6 µW (typical) standby
by 8 bits, CMOS SRAM. It is fabricated using ISSI’s low
voltage, six transistor (6T), CMOS technology. The device is
targeted to satisfy the demands of the state-of-the-art
technologies such as cell phones and pagers.
• Low data retention voltage: 2V (min.)
When CE is HIGH (deselected), the device assumes a
standbymodeatwhichthepowerdissipationcanbereduced
down with CMOS input levels. Additionally, easy memory
expansion is provided by using Chip Enable and Output
Enable inputs, CE and OE. The active LOW Write Enable (WE)
controls both writing and reading of the memory.
• Output Enable (OE) and two Chip Enable
(CE1 and CE2) inputs for ease in applications
• TTL compatible inputs and outputs
• Fully static operation:
— No clock or refresh required
The IS62LV2568LL is available in 32-pin TSOP (Type I),
STSOP (Type I), and 36-pin mini BGA.
• Single 2.5V to 3.0V power supply
• Available in 32-pin TSOP (Type I), STSOP (Type I),
and 36-pin mini BGA
FUNCTIONAL BLOCK DIAGRAM
256K x 8
MEMORY ARRAY
A0-A17
DECODER
VCC
GND
I/O
DATA
COLUMN I/O
I/O0-I/O7
CIRCUIT
CE1
CE2
CONTROL
CIRCUIT
OE
WE
ISSI reserves the right to make changes to its products at any time without notice in order to improve design and supply the best possible product. We assume no responsibility for any
errors which may appear in this publication. © Copyright 2000, Integrated Silicon Solution, Inc.
Integrated Silicon Solution, Inc. — 1-800-379-4774
1
Rev. B
05/03/00
®
IS62LV2568LL
ISSI
PIN CONFIGURATION
36-pin mini BGA (B)
PIN DESCRIPTIONS
A0-A17
CE1
Address Inputs
1
2
3
4
5
6
Chip Enable 1 Input
Chip Enable 2 Input
Output Enable Input
Write Enable Input
Input/Output
CE2
OE
WE
A
B
C
D
E
F
A0
I/O4
I/O5
GND
Vcc
I/O6
I/O7
A9
A1
A2
CE2
WE
NC
A3
A4
A5
A6
A7
A8
I/O0
I/O1
Vcc
I/O0-I/O7
NC
No Connection
Power
Vcc
GND
Ground
GND
I/O2
I/O3
A14
NC
CE1
A11
A17
A16
A12
OE
A15
A13
G
H
A10
32-Pin TSOP (Type I), STSOP (Type I)
A11
A9
A8
1
2
3
4
5
6
7
8
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
OE
A10
CE1
I/O7
I/O6
I/O5
I/O4
I/O3
GND
I/O2
I/O1
I/O0
A0
A13
WE
CE2
A15
VCC
A17
A16
A14
A12
A7
9
10
11
12
13
14
15
16
A6
A5
A4
A1
A2
A3
2
Integrated Silicon Solution, Inc. — 1-800-379-4774
Rev. B
05/03/00
®
IS62LV2568LL
ISSI
TRUTH TABLE
Mode
WE
CE1 CE2 OE
I/O Operation
Vcc Current
Not Selected
(Power-down)
X
X
H
X
X
L
X
X
High-Z
High-Z
ISB1, ISB2
ISB1, ISB2
Output Disabled H
L
L
L
H
H
H
H
L
X
High-Z
DOUT
DIN
ICC
ICC
ICC
Read
Write
H
L
OPERATING RANGE
Range
Ambient Temperature
VCC
Commercial
0°C to +70°C
2.5V to 3.0V
Industrial
–40°C to +85°C
2.5V to 3.0V
ABSOLUTE MAXIMUM RATINGS(1)
Symbol Parameter
Value
Unit
VTERM
VCC
Terminal Voltage with Respect to GND
Vcc related to GND
Temperature Under Bias
Storage Temperature
–0.5 to Vcc + 0.5
–0.3 to +4.6
–40 to +85
–65 to +150
0.7
V
V
°C
°C
W
TBIAS
TSTG
PT
Power Dissipation
Note:
1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause
permanent damage to the device. This is a stress rating only and functional operation of the
device at these or any other conditions above those indicated in the operational sections of
this specification is not implied. Exposure to absolute maximum rating conditions for
extendedperiodsmayaffectreliability.
CAPACITANCE(1,2)
Symbol
CIN
Parameter
Conditions
VIN = 0V
Max.
Unit
pF
Input Capacitance
Output Capacitance
6
8
COUT
VOUT = 0V
pF
Notes:
1. Tested initially and after any design or process changes that may affect these parameters.
2. Test conditions: TA = 25°C, f = 1 MHz, Vcc = 3.0V.
Integrated Silicon Solution, Inc. — 1-800-379-4774
3
Rev. B
05/03/00
®
IS62LV2568LL
ISSI
DC ELECTRICAL CHARACTERISTICS (Over Operating Range)
Symbol Parameter
Test Conditions
Min.
Max.
Unit
VOH
VOL
VIH
VIL
ILI
Output HIGH Voltage
VCC = Min., IOH = –1.0 mA
2.0
—
2.2
–0.3
–1
—
0.4
VCC + 0.3
V
V
V
V
µA
µA
Output LOW Voltage
Input HIGH Voltage
Input LOW Voltage(1)
Input Leakage
VCC = Min., IOL = 2.1 mA
0.4
1
1
GND ≤ VIN ≤ VCC
GND ≤ VOUT ≤ VCC
ILO
Output Leakage
–1
Note:
1. VIL = –3.0V for pulse width less than 10 ns.
POWER SUPPLY CHARACTERISTICS(1) (Over Operating Range)
-70
Min.
-85
Min.
Symbol Parameter
Test Conditions
Max.
Max.
Unit
ICC
Vcc Dynamic
Operating
VCC = Max., CE = VIL
IOUT = 0 mA, f = fMAX
Com.
Ind.
—
—
30
35
—
—
25
30
mA
Supply Current
ISB1
ISB2
TTL Standby
Current
(TTL Inputs)
VCC = Max.,
VIN = VIH or VIL,
CE1 ≥ VIH or CE2 ≤ VIL, f = 0
Com.
Ind.
—
—
0.4
1.0
—
—
0.4
1.0
mA
µA
CMOS Standby VCC = Max., f = 0
Current CE1 ≥ VCC – 0.2V,
(CMOS Inputs) CE2 ≤ 0.2V,
or VIN ≥ VCC – 0.2V, VIN ≤ 0.2V
Com.
Ind.
—
—
5
5
—
—
5
5
Note:
1. At f = fMAX, address and data inputs are cycling at the maximum frequency, f = 0 means no input lines change.
4
Integrated Silicon Solution, Inc. — 1-800-379-4774
Rev. B
05/03/00
®
IS62LV2568LL
ISSI
READ CYCLE SWITCHING CHARACTERISTICS(1) (Over Operating Range)
-70
-85
Symbol
tRC
Parameter
Min.
70
—
10
—
—
—
—
5
Max.
—
Min.
85
—
15
—
—
—
—
5
Max.
—
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
Read Cycle Time
tAA
Address Access Time
Output Hold Time
70
—
85
—
tOHA
tACE1
tACE2
tDOE
CE1 Access Time
CE2 Access Time
OE Access Time
70
70
35
25
—
85
85
45
25
—
(2)
tHZOE
OE to High-Z Output
OE to Low-Z Output
CE1 to Low-Z Output
CE2 to Low-Z Output
CE1 or CE2 to High-Z Output
(2)
tLZOE
tLZCE1(2)
tLZCE2(2)
10
10
0
—
10
10
0
—
—
—
(2)
tHZCE
25
25
Notes:
1. Test conditions assume signal transition times of 5 ns or less, timing reference levels of 1.3V, input pulse levels of 0.4V to 2.2V and
outputloadingspecifiedinFigure1.
2. Tested with the load in Figure 2. Transition is measured 500 mV from steady-state voltage. Not 100ꢀ tested.
AC TEST CONDITIONS
Parameter
Input Pulse Level
Input Rise and Fall Times
Unit
0.4V to 2.2V
5 ns
Input and Output Timing
and Reference Level
1.3V
Output Load
See Figures 1 and 2
AC TEST LOADS
3070 Ω
3070 Ω
2.8V
2.8V
OUTPUT
OUTPUT
3150 Ω
3150 Ω
30 pF
Including
jig and
5 pF
Including
jig and
scope
scope
Figure 1
Figure 2
Integrated Silicon Solution, Inc. — 1-800-379-4774
5
Rev. B
05/03/00
®
IS62LV2568LL
ISSI
AC WAVEFORMS
READ CYCLE NO. 1(1,2)
t
RC
ADDRESS
DOUT
t
AA
t
OHA
t
OHA
DATA VALID
READ CYCLE NO. 2(1,3)
tRC
ADDRESS
OE
tAA
tOHA
tHZOE
tDOE
tLZOE
CE1
tACE1/tACE2
CE2
tLZCE1/
tLZCE2
tHZCE
HIGH-Z
DOUT
DATA VALID
Notes:
1. WE is HIGH for a Read Cycle.
2. The device is continuously selected. OE, CE1 = VIL, CE2 = VIH.
3. Address is valid prior to or coincident with CE1 LOW and CE2 HIGH transitions.
6
Integrated Silicon Solution, Inc. — 1-800-379-4774
Rev. B
05/03/00
®
IS62LV2568LL
ISSI
WRITE CYCLE SWITCHING CHARACTERISTICS(1,3) (Over Operating Range, Standard and Low Power)
-70 -85
Symbol
tWC
Parameter
Min.
70
65
65
65
0
Max.
—
Min.
85
70
70
70
0
Max.
—
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
Write Cycle Time
tSCE1
tSCE2
tAW
CE1 to Write End
—
—
CE2 to Write End
—
—
Address Setup Time to Write End
Address Hold from Write End
Address Setup Time
WE Pulse Width
—
—
tHA
—
—
tSA
0
—
0
—
(4)
tPWE
60
30
0
—
60
35
0
—
tSD
tHD
Data Setup to Write End
Data Hold from Write End
WE LOW to High-Z Output
WE HIGH to Low-Z Output
—
—
—
—
(2)
tHZWE
—
5
33
—
—
5
25
—
(2)
tLZWE
Notes:
1. Testconditionsassumesignaltransitiontimesof5nsorless,timingreferencelevelsof1.3V,inputpulselevelsof0.4Vto2.2VandoutputloadingspecifiedinFigure1.
2. Tested with the load in Figure 2. Transition is measured 500 mV from steady-state voltage. Not 100ꢀ tested.
3. TheinternalwritetimeisdefinedbytheoverlapofCE1LOW,CE2HIGHandWELOW. AllsignalsmustbeinvalidstatestoinitiateaWrite,butanyonecangoinactiveto
terminatetheWrite. TheDataInputSetupandHoldtimingarereferencedtotherisingorfallingedgeofthesignalthatterminatestheWrite.
4. Tested with OE HIGH.
AC WAVEFORMS
WRITE CYCLE NO. 1 (CE Controlled, OE = HIGH or LOW)
t
WC
ADDRESS
CE1
t
HA
tSCE1
tSCE2
CE2
tAW
(4)
t
PWE
WE
DOUT
DIN
t
SA
tHZWE
t
LZWE
HIGH-Z
DATA UNDEFINED
tSD
t
HD
DATA-IN VALID
Integrated Silicon Solution, Inc. — 1-800-379-4774
7
Rev. B
05/03/00
®
IS62LV2568LL
ISSI
WRITE CYCLE NO. 2 (WE Controlled: OE is HIGH During Write Cycle)
t
WC
ADDRESS
OE
t
HA
tSCE1
CE1
tSCE2
CE2
tAW
t
PWE1, 2
WE
t
SA
tHZWE
t
LZWE
HIGH-Z
SD
DOUT
DIN
DATA UNDEFINED
t
tHD
DATA-IN VALID
WRITE CYCLE NO. 3 (WE Controlled: OE is LOW During Write Cycle)
t
WC
ADDRESS
OE
t
HA
tSCE1
CE1
tSCE2
CE2
tAW
t
PWE1, 2
WE
t
SA
tHZWE
t
LZWE
HIGH-Z
SD
DOUT
DIN
DATA UNDEFINED
t
tHD
DATA-IN VALID
8
Integrated Silicon Solution, Inc. — 1-800-379-4774
Rev. B
05/03/00
®
IS62LV2568LL
ISSI
DATA RETENTION SWITCHING CHARACTERISTICS
Symbol Parameter
Test Condition
Min. Max.
Unit
VDR
Vcc for Data Retention
Data Retention Current
See Data Retention Waveform
Vcc = 2.0V, CE1 ≥ Vcc – 0.2V
2.0
3.6
V
IDR
Com.
Ind.
—
—
2
5
µA
µA
tSDR
tRDR
Data Retention Setup Time See Data Retention Waveform
Recovery Time See Data Retention Waveform
0
—
—
ns
ns
tRC
DATA RETENTION WAVEFORM (CE1 Controlled)
t
Data Retention Mode
t
RDR
SDR
V
CC
DR
3.0V
2.2V
V
CE1 ≥ V
CC
Ð 0.2V
CE1
GND
DATA RETENTION WAVEFORM (CE2 Controlled)
Data Retention Mode
V
CC
3.0
t
t
RDR
SDR
CE2
2.2V
V
DR
0.4V
GND
CE2 ≤ 0.2V
Integrated Silicon Solution, Inc. — 1-800-379-4774
9
Rev. B
05/03/00
®
IS62LV2568LL
ISSI
ORDERING INFORMATION
Commercial Range: 0°C to +70°C
Speed (ns) Order Part No.
Package
70
IS62LV2568LL-70B
IS62LV2568LL-70T
IS62LV2568LL-70H
mini BGA (6mm x 8mm)
TSOP, Type I
STSOP, Type I
85
IS62LV2568LL-85B
IS62LV2568LL-85T
IS62LV2568LL-85H
mini BGA (6mm x 8mm)
TSOP, Type I
STSOP, Type I
Industrial Range: –40°C to +85°C
Speed (ns) Order Part No.
Package
70
IS62LV2568LL-70BI
IS62LV2568LL-70TI
IS62LV2568LL-70HI
mini BGA (6mm x 8mm)
TSOP, Type I
STSOP, Type I
85
IS62LV2568LL-85BI
IS62LV2568LL-85TI
IS62LV2568LL-85HI
mini BGA (6mm x 8mm)
TSOP, Type I
STSOP, Type I
®
ISSI
IntegratedSiliconSolution, Inc.
2231 Lawson Lane
Santa Clara, CA 95054
Tel: 1-800-379-4774
Fax: (408) 588-0806
E-mail: sales@issi.com
www.issi.com
10
Integrated Silicon Solution, Inc. — 1-800-379-4774
Rev. B
05/03/00
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