IS62UP12816LL-100H [ISSI]
Standard SRAM, 128KX16, 100ns, CMOS, PDSO44, STSOP2-44;
| 型号： | IS62UP12816LL-100H |
| 厂家： | 
INTEGRATED SILICON SOLUTION, INC |
| 描述： | Standard SRAM, 128KX16, 100ns, CMOS, PDSO44, STSOP2-44 静态存储器 光电二极管 内存集成电路 |
| 文件： | 总13页 (文件大小：83K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
®
ISSI
ADVANCE INFORMATION
APRIL 1999
TARGET SPECIFICATION
IS62Ux12816 Series
128K x 16 LOW VOLTAGE, LOW POWER
CMOS STATIC RAM
FEATURES
DESCRIPTION
The ISSI IS62Ux12816 series is a low voltage, 131,072
wordsby16bits,CMOSSRAM.ItisfabricatedusingISSI's
low voltage, six transistor (6T), CMOS technology. The
series is targeted to satisfy the demands of the state-of-
the-art technologies such as cell phones and pagers.
• Voltage range options
-- 1.6V to 2.0V: IS62UT12816
-- 1.8V to 2.2V: IS62US12816
-- 2.3V to 2.7V: IS62UR12816
-- 2.7V to 3.3V: IS62UP12816
When CE is HIGH (deselected), the device assumes a
standby mode at which the power dissipation can be
reduced down with CMOS input levels. Additionally, easy
memory expansion is provided by using Chip Enable and
Output Enable inputs, CE and OE. The active LOW Write
Enable (WE) controls both writing and reading of the
memory. A data byte allows Upper Byte (UB) and Lower
Byte (LB) access.
• Battery backup (SL/LL version)
-- 1.0V (min.) data retention
• Access times: 55, 70, and 100 ns
• Fully static operation and tri-state outputs
• Industrial temperature available
• Available in 48-ball mini BGA and
44-pin sTSOP (Type II)
The IS62Ux12816 series is packaged in the 48-ball mini
BGA and the 44-pin sTSOP (Type II).
PRODUCT SERIES OVERVIEW
Standby Current (µA)
Part No.
Voltage (V)
Speeds (ns)
Active ICC (mA)
LL
SL
Temperature (°C)
IS62UP12816
3.0, ±0.3
55, 70, 100
55, 70, 100
55, 70, 100
55, 70, 100
55, 70, 100
55, 70, 100
55, 70, 100
55, 70, 100
25 @ 70 ns
25 @ 70 ns
15 @ 70 ns
15 @ 70 ns
10 @ 70 ns
10 @ 70 ns
10 @ 70 ns
10 @ 70 ns
10
10
10
10
10
10
10
10
2
2
2
2
2
2
2
2
0 to 70
40 to 85
0 to 70
40 to 85
0 to 70
40 to 85
0 to 70
40 to 85
IS62UP12816(1) 3.0, ±0.3
IS62UR12816
IS62UR12816(1) 2.5, ±0.2
IS62US12816 2.0, ±0.2
IS62US12816(1) 2.0, ±0.2
IS62UT12816
IS62UT12816(1) 1.8, ±0.2
2.5, ±0.2
1.8, ±0.2
Note:
1. Current value is max.
This document is a TARGET SPECIFICATION only. ISSI reserves the right to make changes to its products at any time without notice in order to improve design and supply the best possible
product. We assume no responsibility for any errors which may appear in this publication. © Copyright 1999, Integrated Silicon Solution, Inc.
2231 Lawson Lane • Santa Clara, CA 95054-3311 • 1-800-379-4774 • Fax: (408) 588-0806
e-mail: sales@issiusa.com • www.issiusa.com
Integrated Silicon Solution, Inc. — 1-800-379-4774
TARGET SPECIFICATION SR065-0T
1
05/01/99
TARGET SPECIFICATION
®
ISSI
IS62Ux12816 SERIES
FUNCTIONAL BLOCK DIAGRAM
128K x 16
MEMORY ARRAY
A0-A16
DECODER
VCC
GND
I/O0-I/O7
Lower Byte
I/O
DATA
COLUMN I/O
CIRCUIT
I/O8-I/O15
Upper Byte
CE
OE
WE
CONTROL
CIRCUIT
UB
LB
2
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TARGET SPECIFICATION SR065-0T
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TARGET SPECIFICATION
®
IS62Ux12816 SERIES
ISSI
PIN CONFIGURATIONS
48-ball mini BGA (B)
44-pin sTSOP (Type II): (H)
1
2
3
4
5
6
1
A4
A3
1
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
24
23
A5
2
A6
A2
A1
3
A7
4
OE
2
A0
5
UB
A0
A3
A1
A4
A2
CE
LB
I/O8
I/O9
GND
Vcc
OE
UB
N/C
I/O0
I/O2
A
B
C
D
E
F
CE
6
LB
I/O0
I/O1
I/O2
I/O3
Vcc
GND
I/O4
I/O5
I/O6
I/O7
WE
7
I/O15
I/O14
I/O13
I/O12
GND
Vcc
I/O11
I/O10
I/O9
I/O8
NC
8
3
9
I/O
10
A5
A6
I/O1
10
11
12
13
14
15
16
17
18
19
20
21
22
I/O
11
NC
NC
A14
A12
A7
I/O3
I/O4
I/O5
Vcc
I/O
12
GND
A16
A15
A13
A10
4
I/O
14
I/O
13
I/O6
I/O7
NC
I/O
15
NC
A8
WE
A11
G
H
5
A16
A15
A14
A13
A12
A8
NC
A9
A9
A10
A11
NC
6
7
PIN DESCRIPTIONS
8
A0-A16
I/O0-I/O15
CE
Address Inputs
Data Inputs/Outputs
Chip Enable Input
Output Enable Input
Write Enable Input
9
OE
WE
LB
Lower-byte Control (I/O0-I/O7)
Upper-byte Control (I/O8-I/O15)
No Connection
10
11
12
UB
NC
Vcc
Power
GND
Ground
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TARGET SPECIFICATION
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ISSI
IS62Ux12816 SERIES
TRUTH TABLE
I/O PIN
Mode
WE
CE
OE
LB
UB
I/O0-I/O7
I/O8-I/O15 Vcc Current
Not Selected
X
X
H
X
X
X
X
H
X
H
High-Z
High-Z
High-Z
High-Z
ISB, ISB1
ICC, ICC1
ICC, ICC1
Output Disabled
Read
H
X
L
L
H
X
X
H
X
H
High-Z
High-Z
High-Z
High-Z
H
H
H
L
L
L
L
L
L
L
H
L
H
L
L
DOUT
High-Z
DOUT
High-Z
DOUT
DOUT
Write
L
L
L
L
L
L
X
X
X
L
H
L
H
L
L
DIN
High-Z
DIN
High-Z
DIN
DIN
ICC, ICC1
Notes:
1. H = VIH, L = VIL, X = Don't Care.
2. UB, LB (Upper, Lower Byte enable).
These active LOW inputs allow individual bytes to be written or read.
When LB is LOW, data is written or read to the lower byte, I/O0-I/O7.
When UB is LOW, data is written or read to the upper byte, I/O8-I/O15.
OPERATING RANGE
Range
Ambient Temperature
0°C to +70°C
Commercial
Industrial
–40°C to +85°C
ABSOLUTE MAXIMUM RATINGS(1)
Symbol Parameter
Value
Unit
V
VCC
Power Supply Voltage Related to GND
Terminal Voltage with Respect to GND
Storage Temperature
–0.5 to +4.0
–0.5 to Vcc + 0.5
–65 to +150
VTERM
TSTG
TBIAS
V
°C
Temperature Under Bias
Com.
Ind.
–10 to +85
–45 to +90
°C
°C
PT
Power Dissipation
DC Output Current
2.0
W
Iout
±20
mA
Notes:
1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the device.
This is a stress rating only and functional operation of the device at these or any other conditions above those indicated
in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for
extended periods may affect reliability.
CAPACITANCE(1)
Symbol
Parameter
Conditions
VIN = 0V
Max.
Unit
pF
CIN
Input Capacitance
Input/Output Capacitance
6
8
COUT
VOUT = 0V
pF
Note:
1. Tested initially and after any design or process changes that may affect these parameters.
4
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TARGET SPECIFICATION
®
IS62Ux12816 SERIES
ISSI
AC TEST CONDITIONS (Over Operating Range)
Parameter
Unit
Input Pulse Level(1)
IS62UP12816
IS62UR12816
IS62US12816
IS62UT12816
0.4V to 2.2V
0.4V to 2.2V
0.4V to 1.8V
0.4V to 1.6V
1
Input Rise and Fall Times
5 ns
2
Input and Output Timing
and Reference Level
IS62UP12816
IS62UR12816
IS62US12816
IS62UT12816
1.5V
1.1V
0.9V
0.8V
3
Output Load (all test parameters except in Note 2)
(see Figure 1)
Output Load(1) (all High-Z and Low-Z parameters)
(see Figure 1)
CL1 = 30 pF
+ 1TTL Load
CL2 = 5 pF
4
Notes:
1. Including jig and scope capacitance.
2. VTM = 2.8V for Vcc = 3.0V ± 0.3V
VTM = 2.3V for Vcc = 2.5V ± 0.2V
VTM = 1.8V for Vcc = 2.0V ± 0.2V
VTM = 1.6V for Vcc = 1.8V ± 0.2V
5
6
AC TEST LOADS
3070 Ω
7
VTM
DOUT
8
CL1,
CL2
3150 Ω
9
10
11
12
Figure 1
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ISSI
IS62Ux12816 SERIES
DC ELECTRICAL CHARACTERISTICS (Over Operating Range)
Symbol Parameter
Test Conditions
Min.
Max.
Unit
VOH
VOL
VIH
Output HIGH Voltage
VCC = 3.0V ± 0.3V, IOH = –2.1 mA
VCC = 2.5V ± 0.2V, IOH = –0.5 mA
VCC = 2.0V ± 0.2V, IOH = –0.44 mA
VCC = 1.8V ± 0.2V, IOH = –0.44 mA
2.2
2.0
1.6
1.4
—
—
—
—
V
Output LOW Voltage
Input HIGH Voltage
VCC = 3.0V ± 0.3V, IOL = 2.1 mA
VCC = 2.5V ± 0.2V, IOL = 0.5 mA
VCC = 2.0V ± 0.2V, IOL = 0.33 mA
VCC = 1.8V ± 0.2V, IOL = 0.26 mA
—
—
—
—
0.4
V
V
IS62UP12816
IS62UR12816
IS62US12816
IS62UT12816
2.2
2.0
1.6
1.4
VCC + 0.2
VCC + 0.2
VCC + 0.2
VCC + 0.2
(1)
VIL
ILI
Input LOW Voltage
Input Leakage
–0.2
–1
0.4
1
V
GND ≤ VIN ≤ VCC
µA
µA
ILO
Output Leakage
GND ≤ VOUT ≤ VCC, CE = VIH or OE = VIH or
–1
1
WE = VIL or UB = VIH or LB = VIH
Note:
1. VIL (min.) = –0.5V for pulse width less than 10 ns.
POWER SUPPLY CHARACTERISTICS(1) (Over Operating Range)
Symbol Parameter
Test Conditions
Min. Max.
Unit
I
CC
Static Operating
Power Supply Current
CE = VIL, VIN = VIH or VIL
II/O = 0 mA, f = 0
,
Vcc = 3.0V ± 0.3V
Vcc = 2.5V ± 0.2V
Vcc = 2.0V ± 0.2V
Vcc = 1.8V ± 0.2V
—
—
—
—
15
10
8
mA
6
I
I
I
I
I
CC
CC
CC
CC
SB
1
1
1
1
Dynamic Operating
Power Supply Current
(IS62UP12816)
Vcc = 3.0V ± 0.3V
55 ns
70 ns
100 ns
—
—
—
35
25
20
mA
mA
mA
mA
mA
I
OUT = 0 mA, f = fMAX
Dynamic Operating
Power Supply Current
(IS62UR12816)
Vcc = 2.5V ± 0.2V
55 ns
70 ns
100 ns
—
—
—
20
15
8
I
OUT = 0 mA, f = fMAX
Dynamic Operating
Power Supply Current
(IS62US12816)
Vcc = 2.0V ± 0.2V
55 ns
70 ns
100 ns
—
—
—
12
10
7
I
OUT = 0 mA, f = fMAX
Dynamic Operating
Power Supply Current
(IS62UT12816)
Vcc = 1.8V ± 0.2V
55 ns
70 ns
100 ns
—
—
—
11
9
6
I
OUT = 0 mA, f = fMAX
TTL Standby Current
(TTL Inputs)
VCC = 3.0V ± 0.3V, CE = VIH
VCC = 2.5V ± 0.2V, CE = VIH
VCC = 2.0V ± 0.2V, CE = VIH
VCC = 1.8V ± 0.2V, CE = VIH
IS62UP12816
IS62UR12816
IS62US12816
IS62UT12816
—
—
—
—
0.5
0.3
0.3
0.3
I
SB1
CMOS Standby
CE ≥ VCC – 0.2V
LL Versions
SL Versions
—
—
10
2
µA
Note:
1. At f = fMAX, address and data inputs are cycling at the maximum frequency, f = 0 means no input lines change.
6
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TARGET SPECIFICATION SR065-0T
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TARGET SPECIFICATION
®
IS62Ux12816 SERIES
ISSI
READ CYCLE SWITCHING CHARACTERISTICS(1) (Over Operating Range)
-55
-70
-100
Symbol
tRC
Parameter
Min. Max.
Min. Max.
Min. Max.
Unit
1
Read Cycle Time
55
—
10
—
—
—
5
—
55
—
55
30
20
—
20
—
55
20
—
70
—
10
—
—
—
5
—
70
—
70
35
25
—
25
—
70
25
—
100
—
10
—
—
—
5
—
100
—
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
tAA
Address Access Time
Output Hold Time
CE Access Time
tOHA
tACE
2
100
50
tDOE
OE Access Time
(2)
tHZOE
OE to High-Z Output
OE to Low-Z Output
CE to High-Z Output
CE to Low-Z Output
LB, UB Access Time
LB, UB to High-Z Output
LB, UB to Low-Z Output
30
3
(2)
tLZOE
—
(2)
tHZCE
0
0
0
30
(2)
tLZCE
10
—
0
10
—
0
10
—
0
—
4
tBA
100
35
tHZB
tLZB
5
5
5
—
5
Notes:
1. Test conditions assume signal transition times of 5 ns or less, timing reference levels of 1.5V, input pulse levels
of 0.4 to 2.2V and output loading specified in Figure 1.
2. Tested with the load in Figure 2. Transition is measured ±500 mV from steady-state voltage. Not 100% tested.
6
7
AC WAVEFORMS
READ CYCLE NO. 1(1,2) (Address Controlled) (CE = OE = VIL, UB or LB = VIL)
8
t
RC
ADDRESS
9
t
AA
t
OHA
t
OHA
DATA VALID
DOUT
PREVIOUS DATA VALID
10
11
12
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®
ISSI
IS62Ux12816 SERIES
AC WAVEFORMS
READ CYCLE NO. 2(1,3)
t
RC
ADDRESS
OE
t
AA
t
OHA
t
HZOE
t
DOE
t
t
LZOE
ACE
CE
t
HZCE
t
LZCE
LB, UB
t
BA
t
HZB
t
LZB
HIGH-Z
DOUT
DATA VALID
Notes:
1. WE is HIGH for a Read Cycle.
2. The device is continuously selected. OE, CE, UB, or LB = VIL.
3. Address is valid prior to or coincident with CE LOW transition.
WRITE CYCLE SWITCHING CHARACTERISTICS(1,2) (Over Operating Range)
-55
Min. Max.
-70
Min. Max.
-100
Min. Max.
Symbol
tWC
Parameter
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
Write Cycle Time
55
45
45
0
—
—
—
—
—
—
—
—
—
—
30
—
70
60
60
0
—
—
—
—
—
—
—
—
—
—
30
—
100
80
80
0
—
—
—
—
—
—
—
—
—
—
40
—
tSCE
tAW
CE to Write End
Address Setup Time to Write End
Address Hold from Write End
Address Setup Time
LB, UB Valid to End of Write
WE Pulse Width
tHA
tSA
0
0
0
tPWB
tPWE1
tPWE2
tSD
45
45
45
25
0
60
60
60
30
0
80
80
80
40
0
WE Pulse Width
Data Setup to Write End
Data Hold from Write End
WE LOW to High-Z Output
WE HIGH to Low-Z Output
tHD
(3)
tHZWE
—
5
—
5
—
5
(3)
tLZWE
Notes:
1. Test conditions assume signal transition times of 3 ns or less, timing reference levels of 1.5V, input pulse levels of 0.4V to
2.2V and output loading specified in Figure 1.
2. The internal write time is defined by the overlap of CE LOW and UB or LB, and WE LOW. All signals must be in valid states
to initiate a Write, but any one can go inactive to terminate the Write. The Data Input Setup and Hold timing are referenced to
the rising or falling edge of the signal that terminates the write.
3. Tested with the load in Figure 1. Transition is measured ±200 mV from steady-state voltage. Not 100% tested.
8
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TARGET SPECIFICATION
®
IS62Ux12816 SERIES
ISSI
WRITE CYCLE NO. 1(CE Controlled, OE is HIGH or LOW) (1 )
tWC
1
VALID ADDRESS
ADDRESS
tSA
tSCE
tHA
2
CE
tAW
tPWE1
WE
3
tPBW
UB, LB
4
tHZWE
tLZWE
HIGH-Z
DATA UNDEFINED
D
OUT
5
tSD
tHD
DATAIN VALID
DIN
6
WRITE CYCLE NO. 2(OE is HIGH During Write Cycle) (1,2)
tWC
7
ADDRESS
OE
VALID ADDRESS
tHA
8
tSCE
9
CE
tAW
tPWE1
WE
UB, LB
DOUT
10
11
12
tSA
tPBW
tHZWE
tLZWE
HIGH-Z
DATA UNDEFINED
tSD
tHD
DATAIN VALID
DIN
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ISSI
IS62Ux12816 SERIES
WRITE CYCLE NO. 3(OE is LOW During Write Cycle) (1)
t
WC
ADDRESS
VALID ADDRESS
t
HA
LOW
OE
CE
t
SA
t
t
SCE
t
t
AW
PWE2
WE
t
PBW
UB, LB
HZWE
t
LZWE
HIGH-Z
DATA UNDEFINED
D
OUT
t
SD
t
HD
DATAIN VALID
DIN
10
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IS62Ux12816 SERIES
ISSI
WRITE CYCLE NO. 4(LB, UB Controlled, Back-to-Back Write) (1,3)
t
WC
t
WC
1
ADDRESS 1
ADDRESS 2
ADDRESS
OE
CE
2
t
SA
3
t
HA
t
HA
WE
4
t
PBW
t
PBW
UB, LB
WORD 1
WORD 2
t
HZWE
t
LZWE
5
HIGH-Z
DOUT
DATA UNDEFINED
t
HD
t
SD
6
DATAIN
VALID
DATAIN
VALID
DIN
7
Notes:
1. The internal Write time is defined by the overlap of CE = LOW, UB and/or LB = LOW, and WE = LOW. All signals must be
in valid states to initiate a Write, but any can be deasserted to terminate the Write. The tSA, tHA, tSD, and tHD timing is
referenced to the rising or falling edge of the signal that terminates the Write.
2. Tested with OE HIGH for a minimum of 4 ns before WE = LOW to place the I/O in a HIGH-Z state.
3. WE may be held LOW across many address cycles and the LB, UB pins can be used to control the Write function.
8
9
10
11
12
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ISSI
IS62Ux12816 SERIES
DATA RETENTION SWITCHING CHARACTERISTICS
Symbol
VDR
Parameter
Test Condition
Min.
Max.
Unit
V
Vcc for Data Retention
Data Retention Current
See Data Retention Waveform
1.0
3.3
IDR
Vcc = 1.0V, CE ≥ Vcc – 0.2V, VIN ≥ VCC – 0.2V
or VIN ≤ 0.2V. No input may exceed Vcc+0.2V
—
—
2
1
µA
(For -LL version)
(For -SL version)
tSDR
tRDR
Data Retention Setup Time See Data Retention Waveform
Recovery Time See Data Retention Waveform
0
—
—
ns
ns
tRC
DATA RETENTION WAVEFORM (CE Controlled)
Data Retention Mode
t
SDR
t
RDR
V
CC
DR
2.7V, 2.2V,
1.8V, 1.6V
V
CE ≥ VCC – 0.2V
CE
GND
Note:
1. 2.7V: IS62UP12816; 2.2V: IS62UR12816; 1.8V: IS62US12816; 1.6V: IS62UT12816.
ORDERING INFORMATION — SL SERIES
Industrial Range: –40°C to +85°C
Commercial Range: 0°C to +70°C
Speed (ns) Order Part No.
55 IS62UP12816SL-55H
Package
Speed (ns) Order Part No.
55 IS62UP12816SL-55HI
Package
sTSOP (II)
Mini BGA
sTSOP (II)
Mini BGA
sTSOP (II)
Mini BGA
sTSOP (II)
Mini BGA
sTSOP (II)
Mini BGA
sTSOP (II)
Mini BGA
sTSOP (II)
Mini BGA
sTSOP (II)
Mini BGA
IS62UP12816SL-55BI
IS62UR12816SL-55HI
IS62UR12816SL-55BI
IS62US12816SL-55HI
IS62US12816SL-55BI
IS62UT12816SL-55HI
IS62UT12816SL-55BI
IS62UP12816SL-55B
IS62UR12816SL-55H
IS62UR12816SL-55B
IS62US12816SL-55H
IS62US12816SL-55B
IS62UT12816SL-55H
IS62UT12816SL-55B
70
IS62UP12816SL-70HI
IS62UP12816SL-70BI
IS62UR12816SL-70HI
IS62UR12816SL-70BI
IS62US12816SL-70HI
IS62US12816SL-70BI
IS62UT12816SL-70HI
IS62UT12816SL-70BI
sTSOP (II)
Mini BGA
sTSOP (II)
Mini BGA
sTSOP (II)
Mini BGA
sTSOP (II)
Mini BGA
70
IS62UP12816SL-70H
IS62UP12816SL-70B
IS62UR12816SL-70H
IS62UR12816SL-70B
IS62US12816SL-70H
IS62US12816SL-70B
IS62UT12816SL-70H
IS62UT12816SL-70B
sTSOP (II)
Mini BGA
sTSOP (II)
Mini BGA
sTSOP (II)
Mini BGA
sTSOP (II)
Mini BGA
100
IS62UP12816SL-100H
IS62UP12816SL-100B
IS62UR12816SL-100H
IS62UR12816SL-100B
IS62US12816SL-100H
IS62US12816SL-100B
IS62UT12816SL-100H
IS62UT12816SL-100B
sTSOP (II)
Mini BGA
sTSOP (II)
Mini BGA
sTSOP (II)
Mini BGA
sTSOP (II)
Mini BGA
100
IS62UP12816SL-100HI
IS62UP12816SL-100BI
IS62UR12816SL-100HI sTSOP (II)
IS62UR12816SL-100BI
IS62US12816SL-100HI
IS62US12816SL-100BI
IS62UT12816SL-100HI
IS62UT12816SL-100BI
sTSOP (II)
Mini BGA
Mini BGA
sTSOP (II)
Mini BGA
sTSOP (II)
Mini BGA
12
Integrated Silicon Solution, Inc. — 1-800-379-4774
TARGET SPECIFICATION SR065-0T
05/01/99
TARGET SPECIFICATION
®
IS62Ux12816 SERIES
ISSI
ORDERING INFORMATION — SL LL RIES
Industrial Range: –40°C to +85°C
Commercial Range: 0°C to +70°C
1
2
3
4
5
6
7
8
9
Speed (ns) Order Part No.
55 IS62UP12816LL-55H
Package
Speed (ns) Order Part No.
55 IS62UP12816LL-55HI
Package
sTSOP (II)
Mini BGA
sTSOP (II)
Mini BGA
sTSOP (II)
Mini BGA
sTSOP (II)
Mini BGA
sTSOP (II)
Mini BGA
sTSOP (II)
Mini BGA
sTSOP (II)
Mini BGA
sTSOP (II)
Mini BGA
IS62UP12816LL-55BI
IS62UR12816LL-55HI
IS62UR12816LL-55BI
IS62US12816LL-55HI
IS62US12816LL-55BI
IS62UT12816SL-55HI
IS62UT12816LL-55BI
IS62UP12816LL-55B
IS62UR12816LL-55H
IS62UR12816LL-55B
IS62US12816LL-55H
IS62US12816LL-55B
IS62UT12816LL-55H
IS62UT12816LL-55B
70
IS62UP12816LL-70HI
IS62UP12816LL-70BI
IS62UR12816LL-70HI
IS62UR12816LL-70BI
IS62US12816LL-70HI
IS62US12816LL-70BI
IS62UT12816LL-70HI
IS62UT12816LL-70BI
sTSOP (II)
Mini BGA
sTSOP (II)
Mini BGA
sTSOP (II)
Mini BGA
sTSOP (II)
Mini BGA
70
IS62UP12816LL-70H
IS62UP12816LL-70B
IS62UR12816LL-70H
IS62UR12816LL-70B
IS62US12816LL-70H
IS62US12816LL-70B
IS62UT12816LL-70H
IS62UT12816LL-70B
sTSOP (II)
Mini BGA
sTSOP (II)
Mini BGA
sTSOP (II)
Mini BGA
sTSOP (II)
Mini BGA
100
IS62UP12816LL-100H
IS62UP12816LL-100B
IS62UR12816LL-100H
IS62UR12816LL-100B
IS62US12816LL-100H
IS62US12816LL-100B
IS62UT12816LL-100H
IS62UT12816LL-100B
sTSOP (II)
Mini BGA
sTSOP (II)
Mini BGA
sTSOP (II)
Mini BGA
sTSOP (II)
Mini BGA
100
IS62UP12816LL-100HI
IS62UP12816LL-100BI
IS62UR12816LL-100HI
IS62UR12816LL-100BI
IS62US12816LL-100HI
IS62US12816LL-100BI
IS62UT12816LL-100HI
IS62UT12816LL-100BI
sTSOP (II)
Mini BGA
sTSOP (II)
Mini BGA
sTSOP (II)
Mini BGA
sTSOP (II)
Mini BGA
®
ISSI
Integrated Silicon Solution, Inc. 10
2231 Lawson Lane
Santa Clara, CA 95054
Tel: 1-800-379-4774
Fax: (408) 588-0806
E-mail: sales@issi.com
11
www.issi.com 12
Integrated Silicon Solution, Inc. — 1-800-379-4774
TARGET SPECIFICATION SR065-0T
13
05/01/99
相关型号：
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