IS62WV20488ALL-35MI [ISSI]
2M x 8 HIGH-SPEED LOW POWER CMOS STATIC RAM; 2M ×8高速低功耗CMOS静态RAM
| 型号： | IS62WV20488ALL-35MI |
| 厂家： | 
INTEGRATED SILICON SOLUTION, INC |
| 描述： | 2M x 8 HIGH-SPEED LOW POWER CMOS STATIC RAM |
| 文件： | 总16页 (文件大小：116K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
®
IS62WV20488ALL
IS62WV20488BLL
2M x 8 HIGH-SPEED LOW POWER
CMOS STATIC RAM
ISSI
PRELIMINARYINFORMATION
JULY2006
FEATURES
DESCRIPTION
• High-speed access times:
25, 35 ns
• High-performance, low-power CMOS process
• Multiple center power and ground pins for
greater noise immunity
• Fully static operation: no clock or refresh
required
The ISSI IS62WV20488ALL/BLL is a high-speed, low
power, 2M-word by 8-bit CMOS static RAM. The
IS62WV20488ALL/BLL is fabricated using ISSI's high-
performance CMOS technology. This highly reliable
process coupled with innovative circuit design tech-
niques, yields higher performance and low power con-
sumption devices.
When CS1 is HIGH (deselected) or when CS2 is LOW
(deselected)orwhenCS1isLOW,CS2isHIGH,thedevice
assumes a standby mode at which the power dissipation
can be reduced down with CMOS input levels.
• TTL compatible inputs and outputs
• Single power supply
– VDD 1.65V to 2.2V (IS62WV20488ALL)
speed = 35ns for Vcc = 1.65V to 2.2V
– VDD 2.4V to 3.6V (IS62WV20488BLL)
speed = 25ns for Vcc = 2.4V to 3.6V
• Packages available:
The IS62WV20488ALL/BLL operates from a single
power supply and all inputs are TTL-compatible.
The IS62WV20488ALL/BLL is available in 48 ball mini
BGA and 44-pin TSOP (Type II) packages.
–
48-ball miniBGA (9mm x 11mm)
– 44-pin TSOP (Type II)
• Industrial Temperature Support
• Lead-free available
FUNCTIONAL BLOCK DIAGRAM
2M X 8
MEMORY ARRAY
A0-A20
DECODER
VDD
GND
I/O
DATA
COLUMN I/O
I/O0-I/O7
CIRCUIT
CS2
CS1
OE
CONTROL
CIRCUIT
WE
Copyright © 2006 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time
without notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised to
obtain the latest version of this device specification before relying on any published information and before placing orders for products.
Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774
1
Rev. 00B
06/21/06
IS62WV20488ALL
IS62WV20488BLL
®
ISSI
PIN CONFIGURATION
48-pin Mini BGA (M ) (9mm x 11mm)
44-pin TSOP (Type II )
1
2
3
4
5
6
NC
NC
A0
1
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
24
23
NC
2
NC
3
A20
A18
A17
A16
A15
OE
A1
4
A2
5
A3
6
A
B
C
D
E
F
NC
NC
OE
NC
NC
NC
NC
NC
A19
A8
A0
A3
A1
A4
A2
CS1
I/O1
I/O3
I/O4
I/O5
WE
CS2
I/O0
I/O2
A4
7
CS1
I/O0
I/O1
VDD
GND
I/O2
I/O3
WE
A5
8
9
I/O7
I/O6
GND
VDD
I/O5
I/O4
A14
A13
A12
A11
A10
A19
NC
NC
A5
A6
10
11
12
13
14
15
16
17
18
19
20
21
22
GND
A17
NC
A14
A12
A9
A7
VDD
VDD
A16
A15
A13
A10
GND
I/O6
I/O7
A20
NC
NC
G
H
A6
A18
A11
A7
A8
A9
NC
NC
NC
PIN DESCRIPTIONS
A0-A20
CS1, CS2
OE
Address Inputs
Chip Enable Input
Output Enable Input
Write Enable Input
Data Input / Output
Power
WE
I/O0-I/O7
VDD
GND
Ground
NC
NoConnection
2
Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774
Rev. 00B
06/21/06
IS62WV20488ALL
IS62WV20488BLL
®
ISSI
TRUTH TABLE
Mode
WE CS1 CS2
OE
I/OOperation VDD Current
Not Selected
(Power-down)
X
X
H
X
X
L
X
X
High-Z
ISB1, ISB2
OutputDisabled H
L
L
L
H
H
H
H
L
High-Z
DOUT
DIN
ICC
ICC
ICC
Read
Write
H
L
X
ABSOLUTE MAXIMUM RATINGS(1)
Symbol Parameter
Value
Unit
V
V
°C
W
VTERM
VDD
Terminal Voltage with Respect to GND
VDD Relates to GND
–0.5 to VDD + 0.5
–0.3 to 4.0
–65 to +150
1.0
TSTG
PT
StorageTemperature
PowerDissipation
Notes:
1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage
to the device. This is a stress rating only and functional operation of the device at these or any other
conditions above those indicated in the operational sections of this specification is not implied. Exposure
to absolute maximum rating conditions for extended periods may affect reliability.
CAPACITANCE(1,2)
Symbol
CIN
Parameter
Conditions
VIN = 0V
Max.
Unit
pF
InputCapacitance
Input/OutputCapacitance
6
8
CI/O
VOUT = 0V
pF
Notes:
1. Tested initially and after any design or process changes that may affect these parameters.
2. Test conditions: TA = 25°C, f = 1 MHz, VDD = 3.3V.
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3
Rev. 00B
06/21/06
IS62WV20488ALL
IS62WV20488BLL
®
ISSI
OPERATING RANGE (VDD) (IS62WV20488ALL)
Range
Commercial
Industrial
AmbientTemperature
0°C to +70°C
VDD (35 nS)
1.65V-2.2V
1.65V-2.2V
–40°Cto+85°C
OPERATING RANGE (VDD) (IS62WV20488BLL)(1)
Range
Commercial
Industrial
AmbientTemperature
0°C to +70°C
VDD (25 nS)
2.4V-3.6V
2.4V-3.6V
–40°Cto+85°C
Note:
1. When operated in the range of 2.4V-3.6V, the device meets 25ns. When operated in
the range of 3.3V + 5%, the device meets 15ns.
4
Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774
Rev. 00B
06/21/06
IS62WV20488ALL
IS62WV20488BLL
®
ISSI
DC ELECTRICAL CHARACTERISTICS (Over Operating Range)
VDD = 2.4V-3.6V
Symbol Parameter
TestConditions
Min.
1.8
—
Max.
Unit
V
VOH
VOL
VIH
VIL
ILI
OutputHIGHVoltage
VDD = Min., IOH = –1.0 mA
VDD = Min., IOL = 1.0 mA
—
OutputLOWVoltage
Input HIGH Voltage
InputLOWVoltage(1)
InputLeakage
0.4
V
2.0
–0.3
–1
VDD + 0.3
V
0.8
1
V
GND ≤ VIN ≤ VDD
µA
µA
ILO
OutputLeakage
GND ≤ VOUT ≤ VDD, Outputs Disabled
–1
1
Note:
1. VIL(min.)=–0.3VDC;VIL(min.)=–2.0VAC(pulsewidth-2.0ns).Not100%tested.
IH(max.)=VDD +0.3VDC;VIH(max.)=VDD+2.0VAC(pulsewidth-2.0ns).Not100%tested.
V
DC ELECTRICAL CHARACTERISTICS (Over Operating Range)
VDD = 1.65V-2.2V
Symbol Parameter
TestConditions
IOH = -0.1 mA
IOL = 0.1 mA
VDD
Min.
1.4
—
Max.
Unit
V
VOH
VOL
VIH
OutputHIGHVoltage
1.65-2.2V
1.65-2.2V
1.65-2.2V
1.65-2.2V
—
OutputLOWVoltage
Input HIGH Voltage
Input LOW Voltage
InputLeakage
0.2
V
1.4
–0.2
–1
VDD + 0.2
V
(1)
VIL
ILI
0.4
1
V
GND ≤ VIN ≤ VDD
µA
µA
ILO
OutputLeakage
GND ≤ VOUT ≤ VDD, Outputs Disabled
–1
1
Note:
1. VIL(min.)=–0.3VDC;VIL(min.)=–2.0VAC(pulsewidth-2.0ns).Not100%tested.
VIH(max.)=VDD +0.3VDC;VIH(max.)=VDD+2.0VAC(pulsewidth-2.0ns).Not100%tested.
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5
Rev. 00B
06/21/06
IS62WV20488ALL
IS62WV20488BLL
®
ISSI
POWER SUPPLY CHARACTERISTICS(1) (Over Operating Range)
-25
-35
Symbol Parameter
Test Conditions
Min.
Max.
Min. Max.
Unit
ICC
VDD Dynamic Operating VDD = Max.,
Com.
Ind.
—
—
30
35
—
—
25
30
mA
Supply Current
IOUT = 0 mA, f = fMAX
typ.(2)
15
ICC1
ISB1
Operating
Supply Current
VDD = Max.,
IOUT = 0 mA, f = 0
Com.
Ind.
—
—
10
15
—
—
10
15
mA
mA
TTL Standby Current
(TTL Inputs)
VDD = Max.,
VIN = VIH or VIL
Com.
Ind.
—
—
10
12
—
—
10
12
CS1 ≥ VIH, f = 0, CS2 = VIL
ISB2
CMOS Standby
Current (CMOS Inputs) CS1 ≥ VDD – 0.2V,
VDD = Max., Com.
—
—
1.5
1.5
—
—
1.5
1.5
mA
Ind.
CS2 0.2V,
≤
typ.(2)
0.8
VIN ≥ VDD – 0.2V, or
VIN ≤ 0.2V, f = 0
Note:
1. At f = fMAX, address and data inputs are cycling at the maximum frequency, f = 0 means no input lines change.
2. Typical values are measured at VDD = 3.0V, TA = 25oC and not 100% tested.
6
Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774
Rev. 00B
06/21/06
IS62WV20488ALL
IS62WV20488BLL
®
ISSI
AC TEST CONDITIONS (LOW POWER)
Parameter
Unit
Unit
(2.4V-3.6V)
(1.65V-2.2V)
Input Pulse Level
Input Rise and Fall Times
0.4V to VDD-0.3V
1.5ns
0.4V to VDD-0.2V
1.5ns
Input and Output Timing
VDD/2
VDD/2
andReferenceLevel(VRef)
OutputLoad
See Figures 1 and 2
See Figures 1 and 2
AC TEST LOADS
3070
3070
1.8V/3.3V
OUTPUT
1.8V/3.3V
OUTPUT
3150
3150
30 pF
Including
jig and
5 pF
Including
jig and
scope
scope
Figure 2
Figure 1
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7
Rev. 00B
06/21/06
IS62WV20488ALL
IS62WV20488BLL
®
ISSI
READ CYCLE SWITCHING CHARACTERISTICS(1) (Over Operating Range)
25ns
35ns
Symbol
tRC
Parameter
Min.
Max.
—
25
—
25
12
8
Min.
Max.
—
Unit
Read Cycle Time
25
—
4
35
—
4
ns
ns
ns
ns
ns
ns
ns
ns
ns
tAA
Address Access Time
Output Hold Time
35
—
tOHA
tACS1/tACS2
tDOE
CS1/CS2 Access Time
OE Access Time
—
—
—
5
—
—
—
5
35
15
10
—
(2)
tHZOE
OE to High-Z Output
OE to Low-Z Output
CS1/CS2 to High-Z Output
CS1/CS2 to Low-Z Output
(2)
tLZOE
—
8
(2)
tHZCS1/tHZCS2
0
0
10
—
(2)
tLZCS1/tLZCS2
10
—
10
Notes:
1. Testconditionsassumesignaltransitiontimesof5nsorless,timingreferencelevelsof0.9V/1.5V,inputpulselevelsof0.4toVDD-0.2V/0.4VtoVDD-0.3Vand
outputloadingspecifiedinFigure1.
2. TestedwiththeloadinFigure2.Transitionismeasured 500mVfromsteady-statevoltage.Not100%tested.
AC WAVEFORMS
READ CYCLE NO. 1(1,2) (Address Controlled) (CS1 = OE = VIL, CS2 = WE = VIH)
tRC
ADDRESS
tAA
tOHA
tOHA
DATA VALID
D
OUT
PREVIOUS DATA VALID
8
Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774
Rev. 00B
06/21/06
IS62WV20488ALL
IS62WV20488BLL
®
ISSI
AC WAVEFORMS
READ CYCLE NO. 2(1,3) (CS1, CS2, OE Controlled)
t
RC
ADDRESS
OE
t
AA
t
OHA
t
HZOE
t
DOE
t
LZOE
CS1
t
ACS1/tACS2
CS2
t
LZCS1/
LZCS2
t
t
HZCS
HIGH-Z
DOUT
DATA VALID
Notes:
1. WEisHIGHforaReadCycle.
2. Thedeviceiscontinuouslyselected.OE,CS1=VIL. CS2=WE=VIH
.
3. AddressisvalidpriortoorcoincidentwithCS1LOWandCS2HIGHtransition.
Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774
9
Rev. 00B
06/21/06
IS62WV20488ALL
IS62WV20488BLL
®
ISSI
WRITE CYCLE SWITCHING CHARACTERISTICS(1,2) (Over Operating Range)
25 ns
35 ns
Symbol
Parameter
Min. Max.
Min. Max.
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
tWC
Write Cycle Time
25
18
15
0
—
—
—
—
—
—
—
—
12
—
35
25
25
0
—
—
—
—
—
—
—
—
20
—
tSCS1/tSCS2 CS1/CS2 to Write End
tAW
tHA
Address Setup Time to Write End
Address Hold from Write End
Address Setup Time
tSA
0
0
(4)
tPWE
tSD
WE Pulse Width
18
12
0
30
15
0
Data Setup to Write End
Data Hold from Write End
WE LOW to High-Z Output
WE HIGH to Low-Z Output
tHD
(3)
tHZWE
—
5
—
5
(3)
tLZWE
Notes:
1. Testconditionsassumesignaltransitiontimesof5nsorless,timingreferencelevelsof0.9V/1.5V,inputpulselevelsof 0.4toVDD-0.2V/0.4VtoVDD-0.3Vand
outputloadingspecifiedinFigure1.
2. The internal write time is defined by the overlap of CS1 LOW, CS2 HIGH and UB or LB, and WE LOW. All signals must be in valid states to initiate a Write, but
any one can go inactive to terminate the Write. The Data Input Setup and Hold timing are referenced to the rising or falling edge of the signal that terminates the
write.
3. TestedwiththeloadinFigure2.Transitionismeasured 500mVfromsteady-statevoltage.Not100%tested.
4. tPWE >tHZWE +tSD whenOEisLOW.
AC WAVEFORMS
WRITE CYCLE NO. 1 (CS1/CS2 Controlled, OE = HIGH or LOW)
t
WC
ADDRESS
CS1
t
HA
tSCS1
tSCS2
CS2
tAW
t
PWE
WE
DOUT
DIN
t
SA
tHZWE
t
LZWE
HIGH-Z
SD
DATA UNDEFINED
t
t
HD
DATA-IN VALID
10
Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774
Rev. 00B
06/21/06
IS62WV20488ALL
IS62WV20488BLL
®
ISSI
AC WAVEFORMS
WRITE CYCLE NO. 2 (WE Controlled: OE is HIGH During Write Cycle)
t
WC
ADDRESS
OE
t
HA
tSCS1
CS1
tSCS2
CS2
tAW
t
PWE
WE
t
SA
tHZWE
t
LZWE
HIGH-Z
SD
DOUT
DIN
DATA UNDEFINED
t
tHD
DATA-IN VALID
WRITE CYCLE NO. 3 (WE Controlled: OE is LOW During Write Cycle)
t
WC
ADDRESS
OE
t
HA
tSCS1
CS1
tSCS2
CS2
tAW
t
PWE
WE
t
SA
tHZWE
t
LZWE
HIGH-Z
SD
DOUT
DIN
DATA UNDEFINED
t
tHD
DATA-IN VALID
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11
Rev. 00B
06/21/06
IS62WV20488ALL
IS62WV20488BLL
®
ISSI
DATA RETENTION SWITCHING CHARACTERISTICS
Symbol Parameter
TestCondition
Min. Typ.(1) Max. Unit
VDR
IDR
Vcc for Data Retention
DataRetentionCurrent
SeeDataRetentionWaveform
Vcc = 1.2V, CS1/CS2 ≥ Vcc – 0.2V
1.2
—
0
3.6
1.5
—
V
mA
ns
0.5
tSDR
tRDR
Data Retention Setup Time SeeDataRetentionWaveform
RecoveryTime
SeeDataRetentionWaveform
tRC
—
ns
Note:
o
1. Typical values are measured at VDD = 3.0V, TA = 25 C and not 100% tested.
DATA RETENTION WAVEFORM (CS1 Controlled)
t
Data Retention Mode
t
RDR
SDR
V
CC
DR
3.0V
2.2V
V
CS1 ≥ V
0.2V
CC
-
CS1
GND
DATA RETENTION WAVEFORM (CS2 Controlled)
Data Retention Mode
V
CC
3.0
t
t
RDR
SDR
CS2
2.2V
V
DR
CS2 ≤ 0.2V
0.4V
GND
12
Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774
Rev. 00B
06/21/06
IS62WV20488ALL
IS62WV20488BLL
®
ISSI
ORDERING INFORMATION
Industrial Range: -40°C to +85°C
Voltage Range: 2.4V to 3.6V
Speed(ns)
Order Part No.
Package
25
IS62WV20488BLL-25MI
48 mini BGA (9mm x 11mm)
IS62WV20488BLL-25MLI 48 mini BGA (9mm x 11mm), Lead-free
IS62WV20488BLL-25TI
IS62WV20488BLL-25TLI
TSOP (Type II)
TSOP (Type II), Lead-free
Industrial Range: -40°C to +85°C
Voltage Range: 1.65V to 2.2V
Speed(ns)
Order Part No.
Package
35
IS62WV20488ALL-35MI
IS62WV20488ALL-35TI
48 mini BGA (9mm x 11mm)
TSOP (Type II)
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13
Rev. 00B
06/21/06
®
PACKAGING INFORMATION
Mini Ball Grid Array
ISSI
Package Code: M (48-pin)
Top View
Bottom View
φ b (48x)
1
2
3
4
5 6
6
5
4
3
2
1
A
B
C
D
E
F
A
B
C
D
E
F
e
D
D1
G
H
G
H
e
E
E1
Notes:
1. Controlling dimensions are in millimeters.
A2
A
A1
SEATING PLANE
Copyright © 2003 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time
without notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised to
obtain the latest version of this device specification before relying on any published information and before placing orders for products.
Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774
Rev. D
01/15/03
®
PACKAGING INFORMATION
Mini Ball Grid Array
ISSI
Package Code: M (48-pin)
mBGA - 6mm x 8mm
MILLIMETERS
INCHES
Sym. Min. Typ. Max.
Min. Typ. Max.
N0.
Leads
48
A
—
—
—
—
1.20
0.40
—
.—
0.010 — 0.016
0.024
— 0.047
A1
A2
D
0.25
0.60
—
—
7.90 8.00 8.10
5.60BSC
0.311 0.314 0.319
0.220BSC
D1
E
5.90 6.00 6.10
4.00BSC
0.232 0.236 0.240
0.157BSC
E1
e
0.80BSC
0.031BSC
b
0.40 0.45 0.50
0.016 0.018 0.020
mBGA - 7.2mm x 8.7mm
mBGA - 9mm x 11mm
MILLIMETERS
INCHES
MILLIMETERS
INCHES
Sym. Min. Typ. Max.
Min. Typ. Max.
Sym. Min. Typ. Max.
Min. Typ. Max.
N0.
N0.
Leads
48
Leads
48
A
—
—
—
—
1.20
0.30
—
—
—
—
—
0.047
0.012
—
A
—
—
—
—
1.20
0.30
—
—
—
—
—
0.047
0.012
—
A1
A2
D
0 .24
0.60
0.009
0.024
A1
A2
D
0.24
0.60
0.009
0.024
8.60 8.70 8.80
5.25BSC
0.339 0.343 0.346
0.207BSC
10.90 11.00 11.10
5.25BSC
0.429 0.433 0.437
0.207BSC
D1
E
D1
E
7.10 7.20 7.30
3.75BSC
0.280 0.283 0.287
0.148BSC
8.90 9.00 9.10
3.75BSC
0.350 0.354 0.358
0.148BSC
E1
e
E1
e
0.75BSC
0.030BSC
0.75BSC
0.030BSC
b
0.30 0.35 0.40
0.012 0.014 0.016
b
0.30 0.35 0.40
0.012 0.014 0.016
2
Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774
Rev.D
01/15/03
®
PACKAGING INFORMATION
ISSI
Plastic TSOP
Package Code: T (Type II)
N
N/2+1
Notes:
1. Controlling dimension: millimieters,
unless otherwise specified.
2. BSC = Basic lead spacing
between centers.
3. Dimensions D and E1 do not
include mold flash protrusions and
should be measured from the
bottom of the package.
E
E1
4. Formed leads shall be planar with
respect to one another within
0.004 inches at the seating plane.
1
N/2
D
SEATING PLANE
A
ZD
.
L
α
e
b
C
A1
Plastic TSOP (T - Type II)
Millimeters Inches
Millimeters
Inches
Millimeters
Inches
Symbol Min
Max
Min
Max
Min
Max
Min
Max
Min
Max
Min
Max
Ref. Std.
No. Leads (N)
32
44
50
A
A1
b
C
D
E1
E
e
—
1.20
—
0.047
—
1.20
0.15
0.45
0.21
—
0.047
—
1.20
—
0.047
0.05 0.15
0.30 0.52
0.12 0.21
20.82 21.08
10.03 10.29
11.56 11.96
1.27 BSC
0.002 0.006
0.012 0.020
0.005 0.008
0.820 0.830
0.391 0.400
0.451 0.466
0.050 BSC
0.05
0.30
0.12
18.31 18.52
10.03 10.29
11.56 11.96
0.80 BSC
0.002 0.006
0.012 0.018
0.005 0.008
0.721 0.729
0.395 0.405
0.455 0.471
0.032 BSC
0.05 0.15
0.30 0.45
0.12 0.21
20.82 21.08
10.03 10.29
11.56 11.96
0.80 BSC
0.002 0.006
0.012 0.018
0.005 0.008
0.820 0.830
0.395 0.405
0.455 0.471
0.031 BSC
L
ZD
α
0.40 0.60
0.95 REF
0.016 0.024
0.037 REF
0.41
0.81 REF
0°
0.60
0.016 0.024
0.032 REF
0.40 0.60
0.88 REF
0.016 0.024
0.035 REF
0°
5°
0°
5°
5°
0°
5°
0°
5°
0°
5°
Copyright © 2003 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time
without notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised to
obtain the latest version of this device specification before relying on any published information and before placing orders for products.
Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774
Rev. F
06/18/03
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