R34501 [ITF]

SAW Resonator; 声表面波谐振器
R34501
型号: R34501
厂家: INTEGRATED TECHNOLOGY FUTURE    INTEGRATED TECHNOLOGY FUTURE
描述:

SAW Resonator
声表面波谐振器

声表面波谐振器
文件: 总6页 (文件大小:255K)
下载:  下载PDF数据表文档文件

R3460

Silicon Power Rectifier

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14 MICROSEMI

R3460

Silicon Power Rectifier

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6 MICROSEMI

R3475035J00

CAPACITOR, TANTALUM, SOLID, POLARIZED, 35V, 4.7uF, THROUGH HOLE MOUNT, RADIAL LEADED

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0 VISHAY

R3475040J00

CAPACITOR, TANTALUM, SOLID, POLARIZED, 40V, 4.7uF, THROUGH HOLE MOUNT, RADIAL LEADED

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0 VISHAY

R3475040M00

CAPACITOR, TANTALUM, SOLID, POLARIZED, 40V, 4.7uF, THROUGH HOLE MOUNT, RADIAL LEADED

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0 VISHAY

R3480

Silicon Power Rectifier

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23 MICROSEMI

R34B10A

Rectifier Diode, 1 Phase, 1 Element, 1340A, 1000V V(RRM), Silicon, DO-200AB,

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0 IRF

R34B10B

Rectifier Diode, 1 Phase, 1 Element, 1260A, 1000V V(RRM), Silicon, DO-200AB,

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0 IRF

R34B14A

Rectifier Diode, 1 Phase, 1 Element, 1260A, 1400V V(RRM), Silicon, DO-200AB,

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0 IRF

R34B14B

Rectifier Diode, 1 Phase, 1 Element, 1200A, 1400V V(RRM), Silicon, DO-200AB,

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0 IRF

R34B16A

Rectifier Diode, 1 Phase, 1 Element, 1200A, 1600V V(RRM), Silicon, DO-200AB,

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0 IRF

R34B16B

Rectifier Diode, 1 Phase, 1 Element, 1140A, 1600V V(RRM), Silicon, DO-200AB,

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0 IRF

R34B18A

Rectifier Diode, 1 Phase, 1 Element, 1200A, 1800V V(RRM), Silicon, DO-200AB,

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0 IRF

R34B18B

Rectifier Diode, 1 Phase, 1 Element, 1140A, 1800V V(RRM), Silicon, DO-200AB,

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0 IRF

R34B22A

Rectifier Diode, 1 Phase, 1 Element, 1140A, 2200V V(RRM), Silicon, DO-200AB,

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0 IRF