C-IXFD15N60 [IXYS]

Power Field-Effect Transistor, 600V, 0.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET;
C-IXFD15N60
型号: C-IXFD15N60
厂家: IXYS CORPORATION    IXYS CORPORATION
描述:

Power Field-Effect Transistor, 600V, 0.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

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C-IXFD170N10

Power Field-Effect Transistor, 100V, 0.01ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

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C-IXFD20N60

Power Field-Effect Transistor, 600V, 0.35ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

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C-IXFD21N50

Power Field-Effect Transistor, 500V, 0.25ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

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C-IXFD24N50

Power Field-Effect Transistor, 500V, 0.23ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

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C-IXFD30N50

Power Field-Effect Transistor, 500V, 0.16ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

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0 IXYS

C-IXFD40N30

Power Field-Effect Transistor, 300V, 0.088ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

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0 IXYS

C-IXFD42N20

Power Field-Effect Transistor, 200V, 0.06ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

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0 IXYS

C-IXFD50N20

Power Field-Effect Transistor, 200V, 0.045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

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0 IXYS

C-IXFD6N100

Power Field-Effect Transistor, 1000V, 2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

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0 IXYS

C-IXFD6N90

Power Field-Effect Transistor, 900V, 1.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

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C-IXFD75N10

Power Field-Effect Transistor, 100V, 0.02ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

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0 IXYS

C-IXFD76N07-12

Power Field-Effect Transistor, 70V, 0.012ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

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0 IXYS

C-IXFD8N80

Power Field-Effect Transistor, 800V, 1.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

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0 IXYS

C-IXFD90N20Q

Power Field-Effect Transistor, 200V, 0.025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

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C-IXGD10N100

Insulated Gate Bipolar Transistor, 1000V V(BR)CES, N-Channel

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