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DE275-201N25 [IXYS]

RF Power Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, D2, 6 PIN;

DE275-201N25


元器件型号：	DE275-201N25
生产厂家：	IXYS CORPORATION
描述和应用：	RF Power Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, D2, 6 PIN 开关光电二极管晶体管
PDF文件：	总1页 (文件大小：41K)
下载文档：	下载PDF数据表文档文件
型号参数：DE275-201N25参数

DE275-201N25-00

TRANSISTOR | MOSFET POWER MODULE | INDEPENDENT | 200V V(BR)DSS | 25A I(D)

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15 ETC

DE275-201N25A

RF Power MOSFET

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36 IXYS

DE275-201N25A

RF Power Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET,

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0 IXYS

DE275-201P11-00

TRANSISTOR | MOSFET POWER MODULE | INDEPENDENT | 200V V(BR)DSS | 11A I(D)

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14 ETC

DE275-501N12-00

TRANSISTOR | MOSFET POWER MODULE | INDEPENDENT | 500V V(BR)DSS | 12A I(D)

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6 ETC

DE275-501N16

RF Power MOSFET

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20 IXYS

DE275-501N16

RF Power MOSFET

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51 IXYS

DE275-501N16-00

TRANSISTOR | MOSFET POWER MODULE | INDEPENDENT | 500V V(BR)DSS | 16A I(D)

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18 ETC

DE275-501N16A

RF Power MOSFET

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86 IXYS

DE275-501N16A

RF Power MOSFET

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37 IXYS

DE275-501N16A

RF Power MOSFET

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49 IXYS

DE275-801N06-00

TRANSISTOR | MOSFET POWER MODULE | INDEPENDENT | 800V V(BR)DSS | 6A I(D)

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11 ETC

DE275X2-102N06A

RF Power MOSFET

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75 ETC

DE275X2-102N06A

RF Power MOSFET

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40 ETC

DE275X2-102N06A

RF Power MOSFET

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66 IXYS

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