DLA5P800UC-TUB [IXYS]
Rectifier Diode,;
| 型号： | DLA5P800UC-TUB |
| 厂家： | 
IXYS CORPORATION |
| 描述： | Rectifier Diode, 功效 光电二极管 |
| 文件： | 总5页 (文件大小：161K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DLA5P800UC
=
VRRM
2x 800V
5A
High Efficiency Standard Rectifier
=
IFAV
VF
=
1.12V
Phase leg
Part number
DLA5P800UC
Marking on Product: M5RLUP
Backside: anode/cathode
1
2/4
3
TO-252 (DPak)
Features / Advantages:
Applications:
Package:
● Planar passivated chips
● Diode for main rectification
● For single and three phase
bridge configurations
● Industry standard outline
● RoHS compliant
● Epoxy meets UL 94V-0
● Very low leakage current
● Very low forward voltage drop
● Improved thermal behaviour
Disclaimer Notice
Information furnished is believed to be accurate and reliable. However, users should independently
evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for,
www.littelfuse.com/disclaimer-electronics.
and may not be used in, all applications. Read complete Disclaimer Notice at
IXYS reserves the right to change limits, conditions and dimensions.
Data according to IEC 60747and per semiconductor unless otherwise specified
20190212c
© 2019 IXYS all rights reserved
DLA5P800UC
Ratings
Rectifier
Symbol
VRSM
Definition
Conditions
min. typ. max. Unit
TVJ = 25°C
TVJ = 25°C
TVJ = 25°C
TVJ = 150°C
TVJ = 25°C
900
800
5
V
V
max. non-repetitive reverse blocking voltage
max. repetitive reverse blocking voltage
VRRM
IR
reverse current
VR = 800 V
VR = 800 V
IF = 5 A
IF = 10 A
IF = 5 A
µA
0.05 mA
forward voltage drop
1.18
1.38
1.12
1.41
5
V
V
V
V
A
VF
TVJ
=
°C
150
IF = 10 A
TC = 155°C
180° sine
average forward current
threshold voltage
TVJ = 175°C
TVJ = 175°C
IFAV
0.82
V
VF0
for power loss calculation only
slope resistance
58 mΩ
2.5 K/W
K/W
rF
thermal resistance junction to case
thermal resistance case to heatsink
RthJC
RthCH
Ptot
0.5
TC = 25°C
TVJ = 45°C
VR = 0 V
60
70
76
60
64
W
A
A
A
A
total power dissipation
max. forward surge current
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
VR = 400 V; f = 1 MHz
IFSM
TVJ = 150°C
VR = 0 V
value for fusing
TVJ = 45°C
VR = 0 V
I²t
25 A²s
24 A²s
18 A²s
17 A²s
pF
TVJ = 150°C
VR = 0 V
TVJ = 25°C
1
CJ
junction capacitance
IXYS reserves the right to change limits, conditions and dimensions.
Data according to IEC 60747and per semiconductor unless otherwise specified
20190212c
© 2019 IXYS all rights reserved
DLA5P800UC
Ratings
Package TO-252 (DPak)
Symbol
IRMS
Definition
Conditions
min. typ. max. Unit
per terminal
20
175
150
150
A
°C
°C
°C
g
RMS current
-55
-55
-55
TVJ
virtual junction temperature
Top
operation temperature
storage temperature
Tstg
0.3
Weight
20
60
N
FC
mounting force with clip
Product Marking
Part description
D = Diode
L = Low Voltage Standard Rectifier
A = (up to 1200V)
Logo
IXYS
5 = Current Rating [A]
P = Phase leg
Part number
800 = Reverse Voltage [V]
UC = TO-252AA (DPak)
abcdefg
Assembly Line
Date Code
Z YY
WW
Ordering
Ordering Number
DLA5P800UC-TRL
DLA5P800UC-TUB
Marking on Product
M5RLUP
M5RLUP
Delivery Mode
Tape & Reel
Tube
Quantity Code No.
Standard
2500
70
511574
523442
Alternative
TVJ = 175°C
Equivalent Circuits for Simulation
* on die level
Rectifier
V0
I
R0
threshold voltage
slope resistance *
0.82
55
V
V0 max
R0 max
mΩ
IXYS reserves the right to change limits, conditions and dimensions.
Data according to IEC 60747and per semiconductor unless otherwise specified
20190212c
© 2019 IXYS all rights reserved
DLA5P800UC
Outlines TO-252 (DPak)
1
2/4
3
IXYS reserves the right to change limits, conditions and dimensions.
Data according to IEC 60747and per semiconductor unless otherwise specified
20190212c
© 2019 IXYS all rights reserved
DLA5P800UC
Rectifier
10
60
50
40
30
20
30
20
VR = 0 V
8
TVJ = 45°C
I2t
6
IFSM
[A]
TVJ = 45°C
IF
[A2s]
10
TVJ = 150°C
4
2
0
TVJ = 150°C
TVJ = 125°C
TVJ = 150°C
[A]
TVJ
= 25°C
50 Hz, 80% VRRM
0
0.5
1.0
1.5
0.001
0.01
0.1
1
1
2
3
4 5 6 7 8 10
VF [V]
t [s]
Fig. 2 Surge overload current
t [ms]
Fig. 3 I2t versus time
Fig. 1 Forward current versus
voltage drop
8
6
4
2
0
DC =
1
20
15
10
5
0.5
DC =
1
0.4
0.33
0.17
0.08
RthHA
=
0.5
0.4
2.0 K/W
4.0 K/W
6.0 K/W
IF(AV)M
Ptot
0.33
0.17
0.08
10.0 K/W
12.0 K/W
14.0 K/W
[A]
[W]
0
0
2
4
6
0
25 50 75 100 125 150 175 200
0
50
100
150
200
TC [°C]
IF(AV)M [A]
Tamb [°C]
Fig. 5 Max. forward current vs.
case temperature
Fig. 4 Power dissipation versus direct output current and ambient temperature
3.0
2.5
Constants for ZthJC calculation:
2.0
i
Rthi (K/W)
ti (s)
ZthJC
1
2
3
4
5
1.1
0.005
0.0003
0.045
0.2
1.5
0.06
0.2
[K/W]
1.0
0.5
0.0
0.4
0.74
0.05
1
10
100
1000
10000
t [ms]
Fig. 6 Transient thermal impedance junction to case
IXYS reserves the right to change limits, conditions and dimensions.
Data according to IEC 60747and per semiconductor unless otherwise specified
20190212c
© 2019 IXYS all rights reserved
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