DWN5 [IXYS]
Rectifier Diodes & FRED; 整流二极管和FRED型号: | DWN5 |
厂家: | IXYS CORPORATION |
描述: | Rectifier Diodes & FRED |
文件: | 总22页 (文件大小:765K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
Page
Contents
Symbols and Definitions
Nomenclature
General Information
Assembly Instructions
2
2
3
4
5
FRED, Rectifier Diode and Thyristor Chips in Planar Design
IGBT Chips
VCES
IC
G-Series, Low VCE(sat) B2 Types
G-Series, Fast C2 Types
S-Series, SCSOA Capability, Fast Types
E-Series, Improved NPT³ technology
600 ...1200 V
7 ... 20 A
7 ... 20 A
10 ... 20 A
20 ... 150 A
6
6
6
7
600 V
600 V
1200 ... 1700 V
MOSFET Chips
VDSS
RDS(on)
HiPerFETTM Power MOSFET
70 ...1200 V
55 ... 300 V
-100 ...-600 V
500 ...1000 V
0.005 ... 4.5 Ω
0.015 ... 0.135 Ω
0.06 ... 1.2 Ω
8-10
11
12
PolarHTTM MOSFET, very Low RDS(on)
P-Channel Power MOSFET
N-Channel Depletion Mode MOSFET
30 ... 110 Ω
12
Layouts
13-17
Bipolar Chips
VRRM / VDRM
IF(AV)M / IT(AV)M
Rectifier Diodes
FREDs
1200 ... 1800 V
600 ... 1200 V
200 ... 1200 V
600 ... 1800 V
100 ... 600 V
8 ... 200 V
12 ... 416 A
8 ... 244 A
9 ... 148 A
12 ... 150 A
3.5 ... 25 A
28 ... 145 A
15 ... 540 A
10 ... 26 A
18-19
20-21
22-23
24-25
26-27
28-31
32-33
34
Low Leakage FREDs
SONIC-FRDTM Diodes
GaAs Schottky Diodes
Schottky Diodes
Phase Control Thyristors
Fast Rectifier Diodes
800 ... 2200 V
1600 ... 1800 V
Direct Copper Bonded (DCB), Direct Alu Bonded (DAB) Ceramic Substrates
What is DCB/DAB?
DCB Specification
35
36
IXYS reserves the right to change limits, test conditions and dimensions
1
Symbols and Definitions
Nomenclature
Cies
Ciss
-di/dt
IC
Input capacitance of IGBT
IGBT and MOSFET Discrete
Input capacitance of MOSFET
Rate of decrease of forward current
DC collector current
IXSD 40N60A
IX
(Example)
IXYS
Die technology
ID
IF
IF(AV)M
IFSM
IGT
IR
IRM
IT
IT(AV)M
Drain current
Forward current of diode
Maximum average forward current at specified Th
Peak one cycle surge forward current
Gate trigger current
E
F
G
S
T
NPT3 IGBT
HiPerFETTM Power MOSFET
Fast IGBT
IGBT with SCSOA capability
Standard Power MOSFET
Unassembled chip (die)
Reverse current
D
Maximum peak recovery current
Forward current of thyristor
Maximum average on-state current of a thyristor
at specified Th
Maximum surge current of a thyristor
Static drain-source on-state resistance
Thermal resistance junction to case
Slope resistance of a thyristor or diode
(for power loss calculations)
Case temperature
40
Current rating, 40 = 40 A
N
P
N-channel type
P-channel type
60
Voltage class, 60 = 600 V
ITSM
RDS(on)
Rthjc
rT
xx
MOSFET
A
Prime RDS(on) for standard MOSFET
Low gate charge die
Low gate charge die, 2nd generation
PolarHTTM Power MOSFET
Linear Mode MOSFET
IGBT
No letter, low VCE(sat)
Or A2, std speed type
Or B2, high speed type
Or C2, very high speed type
Q
Q2
P
Tcase
Th
tfi
Heatsink temperature
Current fall time with inductive load
Junction temperature
L
Tj, T(vj)
--
A
B
C
Tjm, T(vj)m Maximum junction temperature
trr
VCE(sat)
VCES
VDRM
Reverse recovery time of a diode
Collector-emitter saturation voltage
Maximum collector-emitter voltage
Maximum repetitive forward blocking
voltage of thyristor
Diode and Thyristor Chips
C-DWEP 69-12
(Diode Example)
VDSS
VF
VR
Drain-source break-down voltage
Forward voltage of diode
Reverse voltage
Maximum peak reverse voltage of thyristor or
diode
C
D
Package type
Chip function
D = Silicon rectifier diode
VRRM
W
Unassembled chip
VT
VT0
On-state voltage of thyristor
Threshold voltage of thyristors or diodes (for
power loss calculation only)
EP
Process designator
EP = Epitaxial rectifier diode
N
P
= Rectifier diode, cathode on top
= Rectifier diode, anode on top
FN = Fast Rectifier diode, cathode on top
FP = Fast Rectifier diode, anode on top
69
Current rating value of one chip in A
Voltage class, 12 = 1200 V
-12
Registration No.:
001947 TS2/765/17557
Registration No.:
001947
W-CWP 55-12/18
(Thyristor Example)
W
C
Package type
Chip and DCB Ceramic Substrates Data book
Edition 2004
Chip function
C = Silicon phase control thyristor
Published by IXYS Semiconductor GmbH
Marketing Communications
Edisonstraße 15, D-68623 Lampertheim
W
P
Unassembled chip
Process designator
P = Planar passivated chip
cathode on top
© IXYS Semiconductor GmbH
All Rights reserved
As far as patents or other rights of third parties are concerned, liability is only
assumed for chips and DCB parts per se, not for applications, processes and
circuits implemented with components or assemblies. Terms of delivery and the
right to change design or specifications are reserved.
55
Current rating value of one chip in A
12/18
Voltage class, 12/18 = 1200 up to 1800 V
© 2004 IXYS All rights reserved
2
General Informations for Chips
When mounting Power Semiconductor chips to a header, ceramic substrate or hybrid thick film circuit, the solder system and the chip
attach process are very important to the reliability and performance of the final product. This brochure provides several guidelines
that describe recommended chip attachment pro-cedures. These methods have been used successfully for many years at IXYS.
Available forms of chip packings
IXYS offers various options.
Please order from one of the following possibilities:
Packaging Options Delivery form
C-...*
T-...*
W-...*
Chips in tray (Waffle Pack);
Chips in wafer, unsawed;
Electrically tested
Bipolar = 5" (125 mm∅) wafer; Electrically tested, rejects are inked
Chips in wafer on foil, sawed; Bipolar = 5" (125 mm∅) wafer; Electrically tested, rejects are inked
...* must be amended by the exact chip type designation.
Packing, Storage and Handling
Chips should be transported in their original containers. All chip transfer to other containers or for assembly should be done only with
rubber-tipped vacuum pencils. Contact with human skin (or with a tool that has been touched by hand) leaves an oily residue that may
adversely impact subsequent chip attach or reliability.
At temperatures below 104°F (40°C), there is no limitation on storage time for chips in sealed original packages. Chips removed from
original packages should be assembled immediately. The wetting ability of the contact metallization with solder can be preserved by
storage in a clean and dry nitrogen atmosphere.
The IGBT and MOSFET Chips are electrostatic discharge (ESD) sensitive. Normal ESD precautions for handling must be observed.
Prior to chip attach, all testing and handling of the chips must be done at ESD safe work stations according to DIN IEC 47(CO) 701.
Ionized air blowers are recommended for added ESD protection.
Contamination of the chips degrades the assembly results.Finger prints, dust or oily deposits on the surface of the chips have to be
absolutely avoided.
Rough mechanical treatment can cause damage to the chip.
Electrical Tests
The electrical properties listed in the data sheet presume correctly assembled chips. Testing of non-assembled chips requires the
following precautions:
- High currents have to be supplied homogeneously to the whole metallized contact area.
- Kelvin probes must be used to test voltages at high currents
- Applying the full specified blocking or reverse voltage may cause arcing across the glass passivated junction termination, because
the electrical field on top of the passivation glass causes ionization of the surrounding air. This phenomenon can be avoided by using
inert fluids or by increasing the pressure of the gas surrounding the chip to values above 30 psig (2 bars).
General Rules for Assembly
The linear thermal expansion coefficient of silicon is very small compared to usual contact metals. If a large area metallized silicon
chip is directly soldered to a metal like copper, enormous shear stress is caused by temperature changes (e.g. when cooling down from
the solder temperature or by heating during working conditions) which can disrupt the solder mountdown.
If it is found that larger chips are cracking during mountdown or in the application, then the use of a low thermal expansion coefficient
buffer layer,e.g. tungsten,molybdenum or Trimetal®, for strain relief should be considered. An alternative solution is to soft-solder these
larger chips to DCB ceramic substrates because of their matching thermal expansion coefficients.
IXYS reserves the right to change limits, test conditions and dimensions
3
Assembly Instructions
MOS/IGBT Chips
Recommended Solder System
IXYS recommends a soft solder chip attach using a solder composition of 92.5 % Pb, 5 % Sn and 2.5 % Ag. The maximum chip attach
temperature is 460°C for MOSFET and 360°C for HiPerFETTM and IGBT.
Wire Bonding
It is recommended to use wire of diameter not greater than 0.38 mm (0.015") for bonding to the source emitter and gate pads. Multiple
wires should be used in place of thicker wire to handle high drain or emitter currents. See tables for number of recommended wire
bonds. At smaller gate pads 0.15 mm is recommended.
Thermal Response Testing
To assure good chip attach processing, thermal response testing per MIL STD 750, Method 3161 or equivalent should be performed.
Bipolar Chips
Assembling
IXYS bipolar semiconductor chips have a soft-solderable, multi-layer metallization (Ti/Ni/Ag) on the bottom side and, on top, either
the same metallization scheme or an alumunium layer sufficiently thick for ultrasonic bonding. Note that the last layer of metal for
soldering is pure silver.
Regardless of their type all chips possess the same glass passivated junction termination system on top of the chip. For that reason
they can be easily chip bonded or they can all be simply soldered to a flat contacting electrode in accordance to the General Rules on
Page 3. All kinds of the usual soft solders with melting points below 660°F (350°C) can be used thanks to their pure silver top metal.
Solders with high melting points are preferable due to their better power cycling capability, i.e. they are more resistant to thermal
fatigue.
Soldering temperature should not exceed 750°F (400°C). The maximum temperature should not be applied for more than five
minutes.
As already mentioned above the electrical properties quoted in the data sheets can only be obtained with properly assembled chips.
This is only possible when all contact materials to be soldered together are well wetted and the solder is practically free of voids.
A simple means to achieve good solder connections is to use a belt furnace running with a process gas containing at least 10 %
Hydrogen in Nitrogen.
Other approved methods are also allowed, provided that the above mentioned temperature-time-limits are not exceeded and
temperature shocks above 930°F/min (500 K/min) are avoided.
We do not recommend the use of fluxes for soldering!
Ultrasonic Wire Bonding
Chips provided with a thick aluminium layer are designed for ultrasonic wire bonding. Wire diameters up to 500 µm can be used
dependent on chip types. Setting wires in parallel and application of stitch bonding lead to surge current ratings comparable to
soldered chips.
Coating
Although the chips are glass passivated, they must be protected against arcing and environmental influences. The coating material
that is in contact with the chip surface must have the following properties:
- elasticity (to prevent mechanical stress)
- high purity, no contamination with alkali metals
- good adhesion to metals and glass passivation.
© 2004 IXYS All rights reserved
4
FRED, Rectifier Diode and Thyristor Chips in Planar Design
Fast Recovery Epitaxial Diodes (FRED)
Power switches (IGBT, MOSFET, BJT, GTO) for applications in electronics are only as good as their associated free-wheeling
diodes. At increasing switching frequencies, the proper functioning and efficiency of the power switch, aside from conduction losses,
is determined by the turn-off behavior of the diode (characterized by Qrr, IRM and trr - Fig. 1.
The reverse current character-istic following the peak reverse current IRM is
another very im-portant property. The slope of the decaying reverse current
dirr/dt results from design para- meters (technology and dif-fusion of the
FRED chip Fig. 2. In a circuit this current slope, in conjunction with parasitic
induc-tances (e.g. connecting leads, causes over-voltage spikes and high
frequency interference vol-tages.The higher the dirr/dt ("hard recovery" or
"snap-off" behavior) the higher is the resulting additional stress for both the
diode and the paralleled switch. A slow decay of the reverse current ("soft
recovery" behavior), is the most desirable characteristic, and this is designed
into all FRED. The wide range of available blocking voltages makes it
possible to apply these FRED as output rectifiers in switch-mode power
supplies (SMPS) as well as protective and free-wheeling diodes for power
switches in inverters and welding power supplies.
Fig. 1: Current and voltage during turn-on and
turn-off switching of fast diodes
Glasspassivation
Rectifier Diode and Thyristor Chips
Guard ring
The figures 3 a-c show cross sectional views of the diode and thyristor
Anode
chips in the passivation area. All thyristor and diode chips (DWN, DWFN,
CWP) are fabricated using separation diffusion processes so that all
Epitaxy layer n-
junctions terminate on the topside of the chip. Now the entire bottom
surfaces of all chips are available for soldering onto a DCB or other ceramic
substrate without a molybdenum strain buffer. The elimination of the strain
buffer and its solder joint reduces thermal resistance and increases
blocking voltage stability. The junction termination areas are passivated
with glass, whose thermal expansion coefficient matches that of silicon. All
silicon chips increasingly use planar technology with guard rings and
channel stoppers to reduce electric fields on the chip surface.
Substrate n+
Cathode
Metalization
Fig. 2: Cross section of glassivated planar epitaxial
diode chip with seperation diffusion (type DWEP)
The contact areas of the chips have vapor deposited metal layers which
contribute substantially to their high power cycle capability. All chips are
processed on silicon wafers of 5" diameter and diced after a wafer sample
test which auto-matically marks chips not meeting the electrical specification.
The chip geometry is square or rectangular.
Guard ring
Glasspassivation
Fig. 3a-c
Cross sections of Chips in the passivation area
a) Diode chip, type DWN, DWFN
b) Diode chip, type DWP, DWFP
c) Thyristor chip, type CWP
p
n
Fig. 3b)
n+
Glasspassivation
Metalization
Glasspassivation
Emitter
Guard ring
Channel-
Fig. 3a)
stopper
Fig. 3c)
Metalization
Metalization
IXYS reserves the right to change limits, test conditions and dimensions
5
Rectifier Diodes
1
Type
IR
VRRM
TVJ M
IF(AV)M
rect. d = 0.5
VF
TVJ =
IFSM
Reverse Recovery
@IF
VRRM
TVJM
RthJC
@IF
IRM
@-di/dt
TC = 100°C
A
typ.
25°C
V
125°C
V
25°C; VR = 100 V
A
V
typ. mA
°C
K/W
A
A
A
A/µs
800 -
1200
0.7
0.7
150
12
12
2.80
2.80
1.14
1.14
1.14
1.14
7
7
140
140
tbd
tbd
tbd
tbd
tbd
tbd
DWN 5
DWP 5
1200 -
1800
0.7
1.0
1.5
1.5
3.0
3.0
1.5
1.5
2.0
2.0
2.0
2.0
3.5
3.5
15.0
12
20
31
31
42
41
59
58
78
2.80
1.80
1.10
1.10
0.90
0.90
0.65
0.65
0.50
0.50
0.33
0.35
0.16
0.16
0.10
1.14
1.28
1.34
1.37
1.33
1.35
1.24
1.25
1.31
1.33
1.26
1.27
1.18
1.18
1.09
1.14
1.28
1.34
1.37
1.33
1.35
1.24
1.25
1.31
1.33
1.26
1.27
1.18
1.18
1.09
7
30
50
50
80
80
80
80
150
150
200
200
300
300
300
150
300
320
320
500
500
630
630
900
tbd
tbd
tbd
tbd
tbd
tbd
11
11
12
12
24
tbd
tbd
tbd
tbd
tbd
tbd
50
50
50
50
50
50
50
50
30
tbd
tbd
tbd
tbd
tbd
tbd
0.64
0.64
1
1
3
3
6
6
50
DWN 2
DWN 9
DWN 17
DWP 17
DWN 21
DWP 21
DWN 35
DWP 35
DWN 50
DWP 50
DWN 75
DWP 75
DWN 110
DWP 110
DWN 340
76
900
115
118
253
253
416
1500
1500
3200
3200
5900
24
45
45
235
1600 -
2200
3.5
3.5
253
788
0.16
0.05
1.18
1.10
1.18
1.10
300
600
3200
10500
45
45
50
40
6
50
DWN 108
DWN 347
1
Mounted on DCB
© 2004 IXYS All rights reserved
18
Rectifier Diodes
Type
Chips
per
Dimensions
Si-
thickn.
A
B
Wafer
mm
mm
mm
1123
716
4.40
4.40
2.10
2.10
0.265
0.265
DWN 5
DWP 5
•
•
1204
684
518
518
346
346
259
259
198
198
125
125
58
2.95
3.90
4.45
4.45
5.40
5.40
6.20
6.20
7.10
7.10
8.70
8.70
2.95
3.90
4.45
4.45
5.40
5.40
6.20
6.20
7.10
7.10
8.70
8.70
0.265
0.265
0.265
0.265
0.265
0.265
0.265
0.265
0.265
0.265
0.265
0.265
0.265
0.265
0.265
DWN 2
DWN 9
•
•
•
•
•
•
•
•
•
•
DWN 17
DWP 17
DWN 21
DWP 21
DWN 35
DWP 35
DWN 50
DWP 50
DWN 75
DWP 75
DWN 110
DWP 110
DWN 340
•
•
•
DWN
•
•
•
•
•
•
•
12.30 12.30
12.30 12.30
16.20 16.20
58
32
•
•
58
16
12.30 12.30
25.30 18.50
0.315
0.315
DWN 108
DWN 347
•
•
±5%
-0.1
-0.1
Tolerance
DWP
19
© 2004 IXYS All rights reserved
FRED - Fast Recovery Epitaxial Diodes
1
Type
IR
IF(AV)M
rect. d = 0.5
TC = 100°C
A
VF
IFSM
Reverse Recovery
VRRM
TVJM
RthJC
VRRM
125°C
mA
@IF
IRM
@IF
@-di/dt
@-di/dt
TVJ
25°C
V
=
trr
@IF
typ.
@
25°C; VR = 100 V
A
VR = 30 V
typ. ns
V
°C
K/W
V
°C
A
A
A
A/µs
200
5.0
11.0
20.0
150
54
91
244
0.9
tbd
0.4
1.09
1.03
1.12
0.84
0.87
0.87
150
150
150
30
100
125
300
475
1200
4
4
2
50
100
12.5
100
100
25
35
35
tbd
1
1
1
100
200
350
DWEP 27-02
DWEP 37-02
DWEP 77-02
600
1.5
1.5
3.0
7.0
7.0
14.0
17.0
20.0
tbd
8
2.5
2.5
1.6
0.9
0.9
0.8
0.7
0.4
1.65
1.45
1.65
1.53
1.53
1.73
1.58
1.31
1.48
1.31
1.48
1.33
1.38
1.48
1.38
1.10
150
150
150
150
150
150
125
125
8
8
50
100
100
250
300
550
600
1000
5
5
5
5
5
5
5
20
12
25
25
50
50
100
100
80
100
100
100
100
100
100
100
200
tbd
35
35
35
35
35
35
35
tbd
1
1
1
1
1
1
1
tbd
50
50
100
100
200
200
350
DWEP 8-06
DWEP 12-06
DWEP 15-06
DWEP 23-06
DWEP 25-06
DWEP 35-06
DWEP 55-06
DWEP 75-06
12
30
30
60
80
162
16
30
43
70
75
75
1000
1200
2.0
4.0
7.0
tbd
12
30
30
60
2.5
1.6
0.9
0.9
0.8
0.7
0.4
2.65
2.65
2.43
2.35
2.24
2.12
1.89
2.09
2.09
2.04
1.99
1.79
1.68
1.57
150
150
150
150
150
125
125
6
12
30
36
60
50
75
40
75
7
5
7
7
7
12
25
50
50
100
50
100
100
100
100
100
120
200
tbd
35
35
35
35
35
35
tbd
1
1
1
1
1
1
tbd
50
DWEP 3-10
DWEP 10-10
DWEP 18-10
DWEP 20-10
DWEP 30-10
DWEP 50-10
DWEP 70-10
200
200
500
500
800
100
100
200
200
350
7.0
14.0
17.0
20.0
82
129
6
14
80
2.0
4.0
7.0
tbd
12
30
30
60
2.5
1.6
0.9
0.9
0.7
0.7
0.4
2.55
2.55
2.60
2.50
2.35
2.19
1.77
2.19
2.19
2.19
2.19
1.94
1.89
1.54
150
150
150
150
150
125
125
5
12
30
30
60
50
75
80
75
7
5
7
7
7
10
25
50
50
100
50
100
100
100
100
100
100
200
tbd
50
40
40
40
40
40
tbd
1
1
1
1
1
1
tbd
50
DWEP 6-12
DWEP 9-12
DWEP 17-12
DWEP 19-12
DWEP 29-12
DWEP 49-12
DWEP 69-12
200
200
500
500
800
100
100
200
200
350
7.0
14.0
17.0
20.0
77
123
9
20
75
1
Mounted on DCB
© 2004 IXYS All rights reserved
20
FRED - Fast Recovery Epitaxial Diodes
Type
Chips
per
Dimensions
Si-
thickn.
A
B
Wafer
mm
mm
mm
518
257
151
4.45
6.20
8.91
4.45
6.20
7.22
0.35
0.35
0.35
DWEP 27-02
DWEP 37-02
DWEP 77-02
•
•
•
•
1612
1851
990
531
518
257
230
151
3.60
2.40
3.25
5.50
4.45
6.20
8.65
8.91
1.80
2.40
3.25
3.50
4.45
6.20
4.95
7.22
0.35
0.35
0.35
0.35
0.35
0.35
0.35
0.35
DWEP 8-06
DWEP 12-06
DWEP 15-06
DWEP 23-06
DWEP 25-06
DWEP 35-06
DWEP 55-06
DWEP 75-06
•
•
•
•
•
•
•
•
•
•
•
•
•
•
1612
990
531
518
257
230
151
1.80
3.25
5.50
4.45
6.20
8.65
8.91
3.60
3.25
3.50
4.45
6.20
4.95
7.22
0.35
0.35
0.35
0.35
0.35
0.35
0.35
DWEP 3-10
DWEP 10-10
DWEP 18-10
DWEP 20-10
DWEP 30-10
DWEP 50-10
DWEP 70-10
•
•
•
•
•
•
•
•
1851
990
531
518
257
230
151
2.40
3.25
5.50
4.45
6.20
8.65
8.91
2.40
3.25
3.50
4.45
6.20
4.95
7.22
0.35
0.35
0.35
0.35
0.35
0.35
0.35
DWEP 6-12
DWEP 9-12
DWEP 17-12
DWEP 19-12
DWEP 29-12
DWEP 49-12
DWEP 69-12
•
•
•
•
•
•
•
•
•
•
•
•
•
-0.1
-0.1
5%
Tolerance
21
© 2004 IXYS All rights reserved
Low Leakage Fast Recovery Epitaxial Diodes
1
Type
VRRM
IR
TVJM
IF(AV)M
rect. d = 0.5
TC= 100°C
A
RthJC
VF
TVJ =
IFSM
Reverse Recovery
VRRM
TVJ M
mA
@IF
IRM
@IF
@-di/dt
trr
@IF
@-di/dt
25°C
V
175°C
V
typ.
K/W
25°C; VR = 100 V
A
VR = 30 V
typ. ns
V
°C
A
A
A
A/µs
200
0.20
0.50
0.50
0.20
175
14
29
25
46
2.50
1.60
1.60
0.90
1.21
0.99
1.13
1.10
0.75
0.74
0.78
0.80
5
12
12
30
80
140
140
325
2.4
2.4
1.1
2.0
10
25
25
50
100
100
100
100
25
25
25
25
1
1
1
1
50
100
100
200
DWLP 4-02
DWLP 15-02
DWLP 15-02B
DWLP 25-02
300
0.20
0.25
0.50
0.50
1.00
1.00
2.50
4.00
13
15
25
29
51
41
72
117
2.80
2.50
1.60
1.60
0.90
0.90
0.65
0.40
1.63
1.45
1.44
1.26
1.19
1.49
1.42
1.43
0.96
0.95
0.94
0.60
0.77
0.99
0.91
0.92
5
6
40
60
1.3
1.4
1.4
1.4
3.0
1.9
2.8
3.2
10
12
25
25
50
50
130
200
100
100
100
100
100
100
100
100
30
30
30
30
30
25
30
30
1
1
1
1
1
1
1
1
50
50
DWLP 4-03
DWLP 8-03
12
12
30
30
60
100
110
110
300
300
600
1000
100
100
200
200
300
400
DWLP 15-03
DWLP 15-03A
DWLP 23-03
DWLP 23-03A
DWLP 55-03
DWLP 75-03
400
600
0.25
0.50
1.00
2.50
4.00
8.50
14
24
46
67
117
148
2.50
1.60
0.90
0.65
0.40
0.35
1.40
1.40
1.43
1.12
1.39
6.14
0.91
0.90
0.93
0.81
0.89
9.72
6
12
30
60
100
300
60
110
300
600
1000
1200
1.4
2.5
2.5
3.5
4.0
9.5
12
25
50
130
200
200
100
100
100
100
100
100
30
30
30
30
30
30
1
1
1
1
1
1
50
100
200
300
400
800
DWLP 8-04
DWLP 15-04
DWLP 23-04
DWLP 55-04
DWLP 75-04
DWLP 150-04
0.20
0.25
0.25
0.50
0.50
1.00
2.00
2.50
4.00
11
12
11
21
16
40
30
62
99
2.80
2.50
2.50
1.60
1.60
0.90
0.90
0.65
0.40
1.97
1.95
2.39
1.95
2.38
1.54
2.45
1.92
1.93
1.14
1.13
1.25
1.12
1.23
1.10
1.35
1.10
1.11
5
6
6
12
12
30
30
60
100
40
50
50
110
110
250
250
600
1000
2.6
2.6
1.4
2.9
1.5
3.5
2.0
4.0
4.5
10
12
12
25
25
50
50
130
200
100
100
100
100
100
100
100
100
100
30
35
30
35
35
35
30
35
35
1
1
1
1
1
1
1
1
1
50
50
50
100
100
200
200
300
400
DWLP 4-06
DWLP 8-06A
DWLP 8-06B
DWLP 15-06A
DWLP 15-06B
DWLP 23-06A
DWLP 23-06B
DWLP 55-06
DWLP 75-06
1200
0.25
0.50
1.00
2.50
4.00
9
14
29
48
78
2.50
1.60
0.90
0.65
0.40
2.61
2.45
2.68
2.54
2.56
1.46
1.52
1.52
1.40
1.42
6
12
30
60
100
40
90
200
500
800
5.0
5.7
6.7
7.0
7.4
12
25
50
130
200
100
100
100
100
100
40
40
40
40
40
1
1
1
1
1
50
100
200
300
400
DWLP 8-12
DWLP 15-12
DWLP 23-12
DWLP 55-12
DWLP 75-12
1
Mounted on DCB
© 2004 IXYS All rights reserved
22
Low Leakage Fast Recovery Epitaxial Diodes
Type
Chips
per
Wafer
Dimensions
Si-
thickn.
A
B
mm
mm
mm
1960
990
990
518
3.00
3.25
3.25
4.45
1.80
3.25
3.25
4.45
0.37
0.37
0.37
0.37
DWLP 4-02
•
•
•
•
DWLP 15-02
DWLP 15-02B
DWLP 25-02
1960
1612
990
990
531
531
230
151
3.00
3.60
3.25
3.25
5.50
5.50
8.65
8.91
1.80
1.80
3.25
3.25
3.50
3.50
4.95
7.22
0.37
0.37
0.37
0.37
0.37
0.37
0.37
0.37
DWLP 4-03
DWLP 8-03
•
•
•
•
•
•
•
•
DWLP 15-03
DWLP 15-03A
DWLP 23-03
DWLP 23-03A
DWLP 55-03
DWLP 75-03
•
1612
990
531
230
151
74
3.60
3.25
5.50
8.65
8.91
13.00
1.80
3.25
3.50
4.95
7.22
9.77
0.38
0.38
0.38
0.38
0.38
0.38
DWLP 8-04
•
•
•
•
•
•
DWLP 15-04
DWLP 23-04
DWLP 55-04
DWLP 75-04
DWLP 150-04
•
•
•
1960
1612
1612
990
990
531
531
230
151
3.00
3.60
3.60
3.25
3.25
5.50
5.50
8.65
8.91
1.80
1.80
1.80
3.25
3.25
3.50
3.50
4.95
7.22
0.40
0.40
0.40
0.40
0.40
0.40
0.40
0.40
0.40
DWLP 4-06
•
•
•
•
•
•
•
•
•
DWLP 8-06A
DWLP 8-06B
DWLP 15-06A
DWLP 15-06B
DWLP 23-06A
DWLP 23-06B
DWLP 55-06
DWLP 75-06
•
•
1612
990
531
230
151
3.60
3.25
5.50
8.65
8.91
1.80
3.25
3.50
4.95
7.22
0.46
0.46
0.46
0.46
0.46
DWLP 8-12
DWLP 15-12
DWLP 23-12
DWLP 55-12
DWLP 75-12
•
•
•
•
•
•
-0.1
-0.1
5%
Tolerance
23
© 2004 IXYS All rights reserved
SONIC-FRDTM Diodes
1
Type
IF(AV)M
rect. d = 0.5
TC = 100°C
A
VF
TVJ
IFSM
Reverse Recovery
VRRM
IR
VRRM
125°C
typ. mA
TVJM
RthJC
=
@IF
IRM
25°C
typ. A
trr
typ.
ns
@IF
@-di/dt
typ.
25°C
V
150°C
V
V
°C
K/W
A
A
A
A/µs
in design
600
tbd
tbd
tbd
tbd
tbd
tbd
150
tbd
tbd
tbd
tbd
tbd
tbd
tbd
tbd
0.90
0.65
0.40
tbd
tbd
tbd
1.94
2.04
2.05
tbd
tbd
tbd
1.68
1.78
1.80
tbd
tbd
tbd
20
60
100
tbd
tbd
tbd
200
450
750
tbd
tbd
tbd
tbd
tbd
tbd
tbd
tbd
tbd
tbd
tbd
tbd
tbd
tbd
tbd
20
60
100
tbd
tbd
tbd
200
450
750
tbd
DWHP 8-06 F
DWHP 15-06 F
DWHP 23-06 F
DWHP 56-06 F
DWHP 69-06 F
DWHP 150-06 F
in design
1200
0.1
0.2
0.6
0.6
1
12
17
29
37
47
0.90
0.90
0.65
0.65
0.40
0.40
tbd
3.08
2.97
3.15
2.12
3.17
2.13
2.00
2.61
2.49
2.70
1.98
2.72
1.99
1.87
10
20
60
100
200
450
450
750
750
1150
tbd
7
tbd
65
50
175
125
330
170
10
20
60
100
200
450
tbd
750
750
1150
DWHFP 15-12 F
DWHFP 23-12 F
DWHFP 56-12 F
DWHFP 56-12 S
DWHFP 69-12 F
DWHFP 69-12 S
DWHFP 150-12 S
18
28
36
53
54
60
60
100
100
150
100
100
150
1
1.5
60
150
1700
0.6
1
1.8
tbd
31
51
tbd
tbd
0.65
0.40
0.22
tbd
2.35
2.34
1.95
tbd
2.46
2.44
2.03
tbd
60
100
tbd
350
650
1150
tbd
30
50
78
tbd
150
350
tbd
60
100
150
tbd
400
600
1150
tbd
DLFP 55-17 S
DLFP 68-17 S
DLFP 150-17 S
DLFP 200-17 S
tbd
tbd
1600-
1800
0.1
0.2
0.6
1
12
16
27
44
0.90
0.90
0.65
0.40
3.01
2.86
2.90
2.89
3.08
2.90
2.94
2.93
10
20
60
50
150
350
650
tbd
21
30
50
tbd
180
330
240
10
20
60
50
450
450
800
DLFP 15-16/18 F
DLFP 25-16/18 F
DLFP 55-16/18 F
DLFP 68-16/18 F
100
100
1
Mounted on DCB
© 2004 IXYS All rights reserved
24
SONIC-FRDTM Diodes
Type
Chips
per
Dimensions
Si-
thickn.
A
B
Wafer
mm
mm
mm
tbd
968
532
231
152
88
3.60
3.25
5.50
8.65
8.91
11.40
1.80
3.25
3.50
4.95
7.22
9.40
0.180
DWHP 8-06 F
DWHP 15-06 F
DWHP 23-06 F
DWHP 56-06 F
DWHP 69-06 F
DWHP 150-06 F
•
•
•
•
•
•
968
532
231
231
152
152
88
3.25
5.50
8.65
8.65
8.91
8.91
11.40
3.25
3.50
4.95
4.95
7.22
7.22
9.40
DWHFP 15-12 F
DWHFP 23-12 F
DWHFP 56-12 F
DWHFP 56-12 S
DWHFP 69-12 F
DWHFP 69-12 S
DWHFP 150-12 S
•
•
•
•
•
•
•
231
152
88
8.65
8.91
11.40
12.40
4.95
7.22
9.40
0.265
DLFP 55-17 S
DLFP 68-17 S
DLFP 150-17 S
DLFP 200-17 S
•
•
•
•
59
12.40
968
532
231
152
3.25
4.45
8.65
8.91
3.25
4.45
4.95
7.22
DLFP 15-16/18 F
DLFP 25-16/18 F
DLFP 55-16/18 F
DLFP 68-16/18 F
•
•
•
•
-0.1
-0.1
5%
Tolerance
25
© 2004 IXYS All rights reserved
GaAs Schottky Diodes
Type
IF(AV)M
rect.
RthJC
TC = 90°C
typ.
VF typ
TVJ
IR typ
@VRRM
125°C
µA
Cj
0,5*VRRM
125°C
pF
IFSM
VRRM
TVJM
=
@IF
d = 0.5
A
25°C
V
125°C
V
V
°C
K/W
A
A
100
175
8.5
25.0
10.12
5.20
0.62
0.99
0.54
0.94
2.0
10.0
700
< 10
19.0
19.0
12.5
80.0
DWGS04-01A
DWGS10-01C
180
250
300
5.0
8,4
11.0
15.0
17.0
23.0
10.12
10.12
5.20
5.20
3.70
3.70
0.85
1.25
0.80
1.21
0.80
1.24
0.85
1.02
0.80
1.04
0.80
1.07
2.0
4.0
5.0
10.0
7.5
20.0
700
< 10
1300
< 10
2000
< 10
8.8
8.8
22.0
22.0
33.0
33.0
12.5
32.0
30.0
80.0
50.0
120.0
DWGS04-018A
DWGS04-018C
DWGS10-018A
DWGS10-018C
DWGS20-018A
DWGS20-018C
3.9
7.8
9.0
14.0
13.0
20.0
10.12
10.12
5.20
5.20
3.70
3.70
1.30
1.26
1.25
1.26
1.25
1.24
1.30
1.05
1.25
1.07
1.25
1.10
2.0
4.0
5.0
10.0
7.5
20.0
700
< 10
1300
< 10
2000
< 10
6.4
6.4
18.0
18.0
26.0
26.0
12.5
32.0
30.0
80.0
50.0
120.0
DWGS04-025A
DWGS04-025C
DWGS10-025A
DWGS10-025C
DWGS20-025A
DWGS20-025C
3.5
6.0
8.0
17.5
25.0
10.12
10.12
5.20
5.20
3.70
1.60
1,56
1.60
1.56
1,56
1.60
1,10
1.60
1.11
1,14
2.0
4.0
5.0
10.0
20.0
700
< 10
1300
10
3.7
3.7
9.0
9.0
14.0
12.5
32.0
30.0
80.0
120.0
DWGS04-03A
DWGS04-03C
DWGS10-03A
DWGS10-03C
DWGS20-03C
15
© 2004 IXYS All rights reserved
26
GaAs Schottky Diodes
Chips
Dim ensions
per
A
B
Wafer
mm
mm
4060
2126
1.30
2.10
1.30
1.60
DWGS04-01A
DWGS10-01C
•
•
4060
4060
2126
2126
1480
1480
1.30
1.30
2.10
2.10
3.00
3.00
1.30
1.30
1.60
1.60
1.60
1.60
DWGS04-018A
DWGS04-018C
DWGS10-018A
DWGS10-018C
DWGS20-018A
DWGS20-018C
•
•
•
•
•
•
4060
4060
2126
2126
1480
1480
1.30
1.30
2.10
2.10
3.00
3.00
1.30
1.30
1.60
1.60
1.60
1.60
DWGS04-025A
DWGS04-025C
DWGS10-025A
DWGS10-025C
DWGS20-025A
DWGS20-025C
•
•
•
•
•
•
4060
4060
2126
2126
1480
1.30
1.30
2.10
2.10
3.00
1.30
1.30
1.60
1.60
1.60
DWGS04-03A
DWGS04-03C
DWGS10-03A
DWGS10-03C
DWGS20-03C
•
•
•
•
•
-0.1
-0.1
Tolerance
27
© 2004 IXYS All rights reserved
Schottky Diodes
1
Type
IR
VRRM
125°C
1) = 100°C
mA
IF(AV)M
rect. d = 0.5
TC = 125°C
1) = 100°C
A
VF
TVJ
IFSM
Reverse Recovery
VRRM
TVJM
RthJC
=
@IF
@IF
@-di/dt
IRM
25°C
trr
typ.
25°C
A version: 150°C
B version: 125°C
V
typ.
V
8
°C
K/W
0.8
V
A
A
A
ns
A
A/µs
200
1)
1)
145
150
145
0.31
0.18
60
1000
tbd
tbd
50
DWS 39-08D
15
tbd
65
98
150
150
150
tbd
65
98
1.7
1.4
1.1
0.40
0.39
0.39
0.28
0.24
0.25
10
20
40
160
350
660
tbd
tbd
tbd
tbd
tbd
tbd
tbd
20
40
tbd
200
200
DWS 9-15B
DWS 19-15B
DWS 29-15B
1)
1)
1)
1)
30
tbd
tbd
82
102
65
tbd
150
150
150
150
tbd
tbd
82
102
65
tbd
1.4
1.1
0.8
1.2
0.63
tbd
0.42
0.40
0.41
0.43
tbd
0.29
0.27
0.30
10
20
40
40
28
tbd
330
520
800
420
tbd
2.40
tbd
tbd
5.50
tbd
tbd
tbd
tbd
tbd
tbd
20
40
50
30
tbd
200
200
200
200
DWS 7-30B
DWS 17-30B
DWS 27-30B
DWS 37-30B
DWS 217-30B
1)
1)
1)
1)
1)
1)
1)
1)
45
28
32
42
47
63
68
89
95
150
175
150
175
150
175
150
175
28
32
42
47
63
68
89
95
1.7
1.7
1.4
1.4
1.1
1.1
0.8
0.8
0.48
0.66
0.48
0.66
0.48
0.66
0.48
0.66
0.41
0.50
0.41
0.50
0.42
0.50
0.41
0.51
10
10
20
20
40
40
60
60
160
140
320
280
640
550
900
800
1.00
1.00
1.40
1.50
2.00
2.00
2.60
2.50
tbd
tbd
tbd
tbd
tbd
tbd
tbd
tbd
10
10
20
20
40
40
50
50
200
200
200
200
200
200
200
200
DWS 3-45B
DWS 4-45A
DWS 13-45B
DWS 14-45A
DWS 23-45B
DWS 24-45A
DWS 33-45B
DWS 34-45A
1)
1)
1)
1)
1)
1)
1
Mounted on DCB
© 2004 IXYS All rights reserved
28
Schottky Diodes
Type
Chips
per
Dimensions
Si-
thickn.
A
B
Wafer
mm
mm
mm
343
5.40
5.40
0.25/0.43
DWS 39-08D
•
1886
990
515
2.40
3.25
4.45
2.40
3.25
4.45
0.25/0.43
0.25
DWS 9-15B
DWS 19-15B
DWS 29-15B
•
•
•
2857
990
515
515
729
2.40
3.25
4.45
5.40
3.25
2.40
3.25
4.45
5.40
4.45
DWS 7-30B
•
•
•
•
•
DWS 17-30B
DWS 27-30B
DWS 37-30B
DWS 217-30B
2857
1886
1515
990
757
757
2.40
2.40
3.25
3.25
4.45
4.45
5.40
5.40
2.40
2.40
3.25
3.25
4.45
4.45
5.40
5.40
DWS 3-45B
DWS 4-45A
DWS 13-45B
DWS 14-45A
DWS 23-45B
DWS 24-45A
DWS 33-45B
DWS 34-45A
•
•
•
•
•
•
•
•
•
515
515
•
•
±5%
-0.1
-0.1
Tolerance
29
© 2004 IXYS All rights reserved
Schottky Diodes
1
Type
IR
VRRM
125°C
1) = 100°C
mA
IF(AV)M
rect. d = 0.5
TC = 125°C
1) = 100°C
A
VF
TVJ
IFSM
Reverse Recovery
VRRM
TVJM
RthJC
=
@IF
@IF
@-di/dt
IRM
25°C
trr
typ.
25°C
V
150°C
typ.
V
°C
K/W
V
A
A
A
ns
A
A/µs
60
tbd
43
63
175
150
150
150
tbd
43
63
82
1.7
1.4
1.1
0.8
tbd
tbd
10
20
40
60
170
320
660
900
tbd
tbd
tbd
tbd
tbd
tbd
tbd
tbd
20
40
50
tbd
200
200
200
DWS 5-60A
DWS 15-60B
DWS 25-60B
DWS 35-60B
0.60
0.59
0.53
0.60
0.50
0.48
1)
1)
82
2.50
1)
80
66
91
150
175
66
91
1.1
0.8
0.70
0.74
0.55
0.58
40
60
660
700
1.50
2.00
tbd
tbd
40
50
200
200
DWS 25-80B
DWS 36-80A
100
32
45
65
92
175
175
175
175
32
45
65
92
1.7
1.4
1.1
0.8
0.77
0.78
0.78
0.77
0.57
0.57
0.58
0.57
10
20
40
60
120
230
450
700
2.00
2.30
2.60
3.40
tbd
tbd
tbd
tbd
10
20
40
50
200
200
200
200
DWS 2-100A
DWS 12-100A
DWS 22-100A
DWS 32-100A
150
30
43
60
85
175
175
175
175
30
43
60
85
1.7
1.4
1.1
0.8
0.81
0.81
0.81
0.81
0.62
0.62
0.63
0.62
10
20
40
60
120
200
450
700
3.00
4.00
tbd
tbd
tbd
tbd
tbd
10
20
40
50
200
200
200
200
DWS 1-150A
DWS 11-150A
DWS 21-150A
DWS 31-150A
4.50
180
200
30
175
175
30
1.7
0.8
0.81
0.00
0.62
0.00
10
60
120
700
3.50
5.00
tbd
tbd
10
50
200
200
DWS 1-180A
DWS 30-200A
tbd
tbd
1
Mounted on DCB
© 2004 IXYS All rights reserved
30
Schottky Diodes
Type
Chips
per
Dimensions
Si-
thickn.
A
B
Wafer
mm
mm
mm
2857
990
757
515
2.40
3.25
4.45
5.40
2.40
3.25
4.45
5.40
0.25
DWS 5-60A
DWS 15-60B
DWS 25-60B
DWS 35-60B
•
•
•
•
515
343
4.45
5.40
4.45
5.40
DWS 25-80B
DWS 36-80A
•
•
1886
990
757
515
2.40
3.25
4.45
5.40
2.40
3.25
4.45
5.40
DWS 2-100A
DWS 12-100A
DWS 22-100A
DWS 32-100A
•
•
•
•
•
2857
1515
757
2.40
3.25
4.45
5.40
2.40
3.25
4.45
5.40
DWS 1-150A
DWS 11-150A
DWS 21-150A
DWS 31-150A
•
•
•
•
515
1886
515
2.40
5.40
-0.1
2.40
5.40
-0.1
DWS 1-180A
DWS 30-200A
Tolerance
•
•
±5%
31
© 2004 IXYS All rights reserved
Phase Control Thyristors
1
Type
IR
VRRM
TVJ M
IT(AV)M
rect. d = 0.5
VT
TVJ
ITSM
non-rep.
tq
IH
IL
VDRM
VRRM
TVJM
RthJC
VR = 100V, VD = 2/3 VDRM
=
RGK = ∝
VD = 6 V TVJ = 25°C
TVJ = 25°C
@IT
dv/dt
@IT
@tp
TC = 100°C
max.
25°C 150°C
tp = 10ms tp = 200µs, di/dt = -10A/µs
TVJ = TVJM
1)
=
75°C
A
V
mA
°C
K/W
V
V
A
A
µs
V/µs
A
ns
mA
µs
1)
800 -
1200
5
4
4
125
150
150
150
15
1.7
1.7
1.7
0.7
1.55 1.41
1.53 1.53
1.53 1.53
20
44
44
200
300
300
tbd
60
60
tbd
20
20
10
tbd
16
16
50
50
75
100
100
100
10
10
10
10
CWP 7-CG
CWP 8
CWP 8-CG
CWP 35
tbd
tbd
tbd
40
80
80
20
1.46 1.49 150
1200
100
1200 -
1600 -
8
12
12
20
20
150
25
61
36
tbd
tbd
1.2
1.1
0.9
0.9
0.9
1.40 1.41
1.56 1.57
1.55 1.57
45
80
80
60
60
400
520
520
600
600
150
150
150
60
10
20
15
20
20
11
15
20
25
25
100
100
100
100
100
150
150
450
200
200
10
10
10
10
10
CWP 16-CG
CWP 21-CG
CWP 22-CG
CWP 24
1.33
tbd
1.33 1.31
60
CWP 25-CG
1200 -
1800
20
20
20
20
30
40
40
60
125
tbd
tbd
0.5
0.6
0.5
0.4
0.2
0.2
0.2
0.1
1.53 1.58 200
1.38 1.38 200
1.29 1.26 200
1.35 1.35 300
1.21 1.16 350
1.22 1.17 450
1.21 1.17 600
1.17 1.11 600
1150
1500
1900
2400
4750
5200
7000
9500
150
150
150
185
150
150
200
200
20
20
20
20
20
20
50
50
120
150
150
150
160
300
300
300
200
200
200
200
200
200
150
150
450
450
450
450
300
300
200
200
10
10
10
10
30
30
30
30
CWP 41
CWP 50
CWP 55
CWP 71
CWP 130
CWP 180
CWP 341
CWP 347
tbd
204
372
tbd
540
1600 -
2200
20
40
60
tbd
tbd
520
0.2
0.2
0.1
1.55
1.26
tbd
tbd
300
300
1700
6000
8000
185
150
200
20
20
50
150
160
300
150
150
150
200
200
200
30
30
30
CWP 69
CWP 339
CWP 345
1.34 1.34 600
1
Mounted on DCB
© 2004 IXYS All rights reserved
32
Phase Control Thyristors
Type
Chips
per
Dimensions
Si-
thickn.
A
B
F
G
Corner Gate
L
Wafer
J
M
mm
mm
mm
mm
mm
mm
mm
mm
518
375
375
125
4.45
5.20
5.20
8.70
4.45
5.20
5.20
8.70
-
-
0.2
-
0.2
-
1.1
-
1.1
-
1.6
-
1.6
-
0.38
0.38
0.32
0.38
CWP 7-CG
CWP 8
CWP 8-CG
CWP 35
•
•
•
•
•
•
1.80
1.80
1.80
0.90
0.90
1.00
•
239
196
196
196
196
6.50
7.10
7.10
7.10
7.10
6.50
7.10
7.10
7.10
7.10
-
-
-
-
0.2
0.2
0.2
-
1.1
1.1
1.1
-
1.6
1.6
1.6
-
0.38
0.38
0.38
0.32
0.32
CWP 16-CG
CWP 21-CG
CWP 22-CG
CWP 24
•
•
•
•
•
•
•
•
•
•
-
1.80
-
-
1.00
-
0.2
1.1
1.6
CWP 25-CG
94
74
58
50
29
20
16
13
10.00 10.00
13.00 9.77
2.30
2.30
2.30
2.30
3.46
3.50
3.50
3.50
1.50
1.50
1.50
1.50
2.50
2.50
2.50
2.50
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
0.38
0.38
0.38
0.38
0.38
0.38
0.38
0.38
CWP 41
CWP 50
CWP 55
CWP 71
CWP 130
CWP 180
CWP 341
CWP 347
•
•
•
•
•
•
•
•
•
•
•
•
•
•
12.30 12.30
13.40 13.40
19.05 15.40
20.55 17.65
25.30 18.50
23.40 23.40
50
16
13
13.40 13.40
18.50 25.30
23.40 23.40
2.30
3.50
3.50
1.50
2.50
2.50
-
-
-
-
-
-
-
-
-
0.46
0.46
0.46
CWP 69
CWP 339
CWP 345
•
•
•
-0.1
-0.1
-0.1
+0.1
-0.1
+0.1 +0.1
5%
Tolerance
...-CG types
33
© 2004 IXYS All rights reserved
Fast Rectifier Diodes
1
Type
IR
VF
IFSM
Reverse Recovery
VRRM
TVJM
IF(AV)M
RthJC
VRRM
TVJ M
rect. d = 0.5
TVJ =
@IF
@-di/dt
@IF
@-di/dt
IRM
25°C
A
@IF
trr
typ.
µs
typ.
25°C
V
125°C
TC = 75°C
A
V
typ. mA
°C
K/W
V
A
A
A
A/µs
1600 -
1800
2
4
5
5
8
125
10
16
17
17
23
26
2.9
1.6
1.3
1.3
0.9
0.7
1.79
1.98
1.89
2.10
1.98
1.88
tbd
tbd
tbd
tbd
tbd
tbd
10
30
55
55
70
80
75
160
300
300
400
500
tbd
tbd
tbd
tbd
tbd
tbd
tbd
tbd
tbd
tbd
tbd
tbd
tbd
tbd
tbd
tbd
tbd
tbd
1.5
1.5
1.5
1.5
1.5
1.5
4
8
10
10
15
25
5
5
10
10
15
25
DWFN 2-16/18
DWFN 9-16/18
DWFN 17-16/18
DWFP 17-16/18
DWFN 21-16/18
DWFN 35-16/18
10
1
Mounted on DCB
Type
Chips
per
Dimensions
Si-
thickn.
A
B
Wafer
mm
mm
mm
0.265
0.265
0.265
0.265
0.265
0.265
1204
684
518
239
346
259
2.95
3.90
4.45
4.45
5.40
6.20
2.95
3.90
4.45
4.45
5.40
6.20
DWFN 2-16/18
DWFN 9-16/18
DWFN 17-16/18
DWFP 17-16/18
DWFN 21-16/18
DWFN 35-16/18
•
•
•
•
•
•
•
•
DWFP
DWFN
±5%
-0.1
-0.1
Tolerance
© 2004 IXYS All rights reserved
34
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