FDM15-06KC5 [IXYS]
CoolMOS Power MOSFET with HiPerDyn FRED Buck and Boost Topologies; 的CoolMOS功率MOSFET， FRED HiPerDyn降压和升压拓扑
| 型号： | FDM15-06KC5 |
| 厂家： | 
IXYS CORPORATION |
| 描述： | CoolMOS Power MOSFET with HiPerDyn FRED Buck and Boost Topologies |
| 文件： | 总3页 (文件大小：77K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
FMD 15-06KC5
FDM 15-06KC5
Advanced Technical Information
CoolMOS™ 1) Power MOSFET
with HiPerDyn ™ FRED
ID25
VDSS
=
15 A
= 600 V
RDS(on) max = 0.165 Ω
Buck and Boost Topologies
ISOPLUS i4™
3
3
5
4
Electrically isolated back surface
2500 V electrical isolation
N-Channel Enhancement Mode
Low RDSon, high VDSS MOSFET
Ultra low gate charge
T
D
1
4
1
2
q
isolated back
surface
E72873
5
D
T
2
FMD
FDM
Features
MOSFET T
• Silicon chip on Direct-Copper-Bond
substrate
- high power dissipation
- isolated mounting surface
- 2500 V electrical isolation
- low drain to tab capacitance (< 40 pF)
• Fast CoolMOS™ 1) power MOSFET 4th
generation
- high blocking capability
- lowest resistance
- avalanche rated for unclamped
inductive switching (UIS)
- low thermal resistance
due to reduced chip thickness
• Enhanced total power density
• HiPerDyn™ FRED
Symbol
VDSS
Conditions
Maximum Ratings
TVJ = 25°C
600
20
V
VGS
V
ID25
ID90
TC = 25°C
TC = 90°C
15
11
A
A
EAS
EAR
single pulse
repetitive
522
0.79
mJ
mJ
ID = 7.9 A; TC = 25°C
dV/dt
MOSFET dV/dt ruggedness VDS = 0...480 V
50 V/ns
Symbol
Conditions
Characteristic Values
(TVJ = 25°C, unless otherwise specified)
min.
typ. max.
- consisting of series connected diodes
- enhanced dynamic behaviour for
high frequency operation
RDSon
VGS(th)
IDSS
VGS = 10 V; ID = 12 A
VDS = VGS; ID = 0.79 mA
VDS = 600 V; VGS = 0 V
150
3
165
3.5
1
mΩ
2.5
V
TVJ = 25°C
TVJ = 125°C
µA
µA
Applications
10
IGSS
VGS
=
20 V; VDS = 0 V
100
52
nA
• Switched mode power supplies
(SMPS)
• Uninterruptible power supplies (UPS)
• Power factor correction (PFC)
Ciss
Coss
VGS = 0 V; VDS = 100 V
f = 1 MHz
2000
100
pF
pF
Qg
Qgs
Qgd
40
9
13
nC
nC
nC
VGS = 0 to 10 V; VDS = 400 V; ID = 12 A
Advantages
• Easy assembly:
no screws or isolation foils required
• Space savings
• High power density
• High reliability
td(on)
tr
td(off)
tf
Eon
Eoff
Erec off
12
5
50
5
tbd
tbd
tbd
ns
ns
ns
VGS = 10 V; VDS = 400 V
ID = 12 A; RG = 3.3 Ω
ns
mJ
mJ
mJ
1) CoolMOS™ is a trademark of
Infineon Technologies AG.
RthJC
RthCH
1.1 K/W
K/W
with heat transfer paste
0.35
IXYS reserves the right to change limits, test conditions and dimensions.
© 2009 IXYS All rights reserved
20090209c
1 - 3
FMD 15-06KC5
FDM 15-06KC5
Advanced Technical Information
MOSFET T Source-Drain Diode
Symbol
Conditions
Characteristic Values
(TVJ = 25°C, unless otherwise specified)
min. typ. max.
IS
VGS = 0 V
12
A
VSD
IF = 12 A; VGS = 0 V
0.9
1.2
V
trr
QRM
IRM
390
7.5
38
ns
µC
A
IF = 12 A; -diF /dt = 100 A/µs; VR = 400 V
Diode D (data for series connection)
Symbol
VRRM
Conditions
Maximum Ratings
TVJ = 25°C to 150°C
600
V
IF25
IF90
TC = 25°C
TC = 90°C
15
8
A
A
Symbol
Conditions
Characteristic Values
min. typ. max.
VF
IF = 15 A
IF = 30 A
TVJ = 25°C
TVJ = 150°C
TVJ = 25°C
2.50
3.00
V
V
IF = 15 A
IF = 30 A
2.00
2.55
A
A
IR
VR = VRRM
1
µA
TVJ = 150°C
0.08
mA
IFSM
150
A
t = 10 ms (50 Hz), sine;
TVJ = 45°C
TVJ = 25°C
IRM
trr
IF = 20 A; VR = 100 V;
-diF /dt = 200 A/µs
3
35
A
ns
RthJC
RthJH
2.4 K/W
K/W
with heat transfer paste
0.8
Component
Symbol
Conditions
Maximum Ratings
TVJ
Tstg
operating
storage
-55...+150
-55...+125
°C
°C
V~
N
VISOL
FC
IISOL < 1 mA; 50/60 Hz
mounting force with clip
2500
20...120
Symbol
CP
Conditions
Characteristic Values
min. typ. max.
coupling capacity between shorted pins
and mounting tab in the case
40
pF
dS, dA
dS, dA
pin - pin
pin - backside metal
1.7
5.5
mm
mm
Weight
g
9
IXYS reserves the right to change limits, test conditions and dimensions.
© 2009 IXYS All rights reserved
20090209c
2 - 3
FMD 15-06KC5
FDM 15-06KC5
Advanced Technical Information
ISOPLUS i4TM Outline
IXYS reserves the right to change limits, test conditions and dimensions.
© 2009 IXYS All rights reserved
20090209c
3 - 3
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