FII50-12E [IXYS]
NPT IGBT phaseleg; NPT IGBT phaseleg
| 型号： | FII50-12E |
| 厂家： | 
IXYS CORPORATION |
| 描述： | NPT IGBT phaseleg |
| 文件： | 总4页 (文件大小：79K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
FII 50-12E
NPT3 IGBT phaseleg
IC25
VCES
= 50 A
= 1200 V
in ISOPLUS i4-PACTM
VCE(sat)typ. = 2.0 V
3
5
4
1
1
2
5
Features
IGBTs
• NPT3 IGBT
- low saturation voltage
- positive temperature coefficient for
easy paralleling
Symbol
VCES
Conditions
Maximum Ratings
TVJ = 25°C to 150°C
1200
20
V
V
VGES
- fast switching
- short tail current for optimized
performance in resonant circuits
• HiPerFREDTM diode
IC25
IC90
TC = 25°C
TC = 90°C
50
32
A
A
- fast reverse recovery
- low operating forward voltage
- low leakage current
ICM
VCEK
VGE = 15 V; RG = 39 Ω; TVJ = 125°C
50
VCES
A
µs
W
RBSOA, Clamped inductive load; L = 100 µH
• ISOPLUS i4-PACTM package
- isolated back surface
- enlarged creepage towards heatsink
- application friendly pinout
- low inductive current path
- high reliability
tSC
(SCSOA)
VCE = 900V; VGE = 15 V; RG = 39 Ω; TVJ = 125°C
non-repetitive
10
Ptot
TC = 25°C
200
Symbol
Conditions
Characteristic Values
- industry standard outline
- UL registered, E 72873
(TVJ = 25°C, unless otherwise specified)
min.
typ. max.
Applications
VCE(sat)
IC = 30 A; VGE = 15 V; TVJ = 25°C
TVJ = 125°C
2.0
2.3
2.6
V
V
• single phaseleg
- buck-boost chopper
• H bridge
- power supplies
- induction heating
- four quadrant DC drives
- controlled rectifier
• three phase bridge
- AC drives
VGE(th)
ICES
IC = 1 mA; VGE = VCE
4.5
6.5
V
VCE = VCES;VGE = 0 V; TVJ = 25°C
TVJ = 125°C
0.4 mA
mA
0.4
IGES
VCE = 0 V; VGE
=
20 V
200 nA
td(on)
tr
td(off)
tf
Eon
Eoff
85
50
440
50
4.6
2.2
ns
ns
ns
ns
mJ
mJ
Inductive load, TVJ = 125°C
VCE = 600 V; IC = 30 A
- controlled rectifier
±
VGE = 15 V; RG = 39 Ω
Cies
QGon
VCE = 25 V; VGE = 0 V; f = 1 MHz
VCE = 600 V; VGE = 15 V; IC = 30 A
2
250
nF
nC
RthJC
RthJH
0.6 K/W
K/W
with heatsink compound
1.2
© 2003 IXYS All rights reserved
1 - 4
IXYS Semiconductor GmbH
IXYS Corporation
Edisonstr. 15,
Phone: +49-6206-503-0, Fax: +49-6206-503627
D-68623 Lampertheim
3540 Bassett Street, Santa Clara CA 95054
Phone: (408) 982-0700, Fax: 408-496-0670
FII 50-12E
Diodes
Symbol
Equivalent Circuits for Simulation
Conduction
Conditions
Maximum Ratings
IF25
IF90
TC = 25°C
TC = 90°C
48
25
A
A
Symbol
VF
Conditions
Characteristic Values
min. typ. max.
IGBT (typ. at VGE = 15 V; TJ = 125°C)
V0 = 0.95 V; R0 = 45 mΩ
IF = 30 A; TVJ = 25°C
TVJ = 125°C
2.4
1.8
2.8
V
V
Diode (typ. at TJ = 125°C)
V0 = 1.26V; R0 = 15 mΩ
IRM
trr
51
180
A
ns
Thermal Response
IF = 30 A; diF/dt = -1100 A/µs; TVJ = 125°C
VR = 600 V; VGE = 0 V
Erec(off)
1.8
1.6
mJ
RthJC
RthJS
(per diode)
1.3 K/W
K/W
Component
Symbol
IGBT
Cth1 = 0.067 J/K; Rth1 = 0.108 K/W
Cth2 = 0.175 J/K; Rth2 = 0.491 K/W
Conditions
Maximum Ratings
TVJ
Tstg
-55...+150
-55...+125
°C
°C
Diode
Cth1 = 0.039 J/K; Rth1 = 0.337 K/W
Cth2 = 0.090 J/K; Rth2 = 0.963 K/W
VISOL
FC
IISOL ≤ 1 mA; 50/60 Hz
2500
V~
N
mounting force with clip
20...120
Symbol
Conditions
Characteristic Values
min.
typ. max.
dS,dA
dS,dA
pin - pin
pin - backside metal
1.7
5.5
mm
mm
Dimensions in mm (1 mm = 0.0394")
Weight
9
g
© 2003 IXYS All rights reserved
2 - 4
FII 50-12E
120
A
120
A
VGE = 17 V
VGE = 17 V
15 V
13 V
15 V
13 V
100
100
IC
IC
80
60
40
20
0
80
60
40
20
0
11 V
11 V
9 V
9 V
TVJ = 125°C
TVJ = 25°C
V
6 7
V
7
0
1
2
3
4
5
6
0
1
2
3
4
5
VCE
VCE
Fig. 1 Typ. output characteristics
Fig. 2 Typ. output characteristics
90
A
120
A
VCE = 20 V
75
IF
100
IC
60
80
60
40
20
0
45
TVJ = 125°C
TVJ = 25°C
30
TVJ = 125°C
15
0
TVJ = 25°C
10
V
0
1
2
3
4
4
6
8
12
VGE
14 V 16
VF
Fig. 3 Typ. transfer characteristics
20
Fig. 4 Typ. forward characteristics of
freewheelingdiode
10
K/W
1
V
diode
IGBT
15
ZthJC
VGE
0.1
0.01
10
5
single pulse
0.001
0.0001
VCE = 600 V
IC = 35 A
MUBW3512E7
0
0
40
80
120
160nC 200
QG
0.001
0.01
0.1
1
10
s
t
Fig. 5 Typ. turn on gate charge
Fig. 6 Typ. transient thermal impedance
© 2003 IXYS All rights reserved
3 - 4
FII 50-12E
20
100
ns
6
mJ
4
1200
ns
VCE = 600 V
VGE = ±15 V
RG = 39 Ω
TVJ = 125°C
t
d(on)
mJ
16
Eoff
1000
80
70
60
50
40
30
20
10
0
Eoff
Eon
t
t
800
12
8
t
r
600
VCE = 600 V
VGE = ±15 V
RG = 39 Ω
TVJ = 125°C
td(off)
400
E
on
2
0
4
Erec(off)
200
tf
0
0
80
A
0
20
40
60
A
0
20
40
60
80
IC
IC
Fig. 7
Typ. turn on energy and switching
times versus collector current
Fig. 8
Typ. turn off energy and switching
times versus collector current
8
mJ
6
160
ns
4
800
ns
VCE = 600 V
VCE = 600 V
VGE = ±15 V
IC = 35 A
mJ
VGE = ±15 V
IC = 35 A
TVJ = 125°C
E
on
Eoff
Eon
120
3
2
1
0
600
400
200
0
TVJ = 125°C
t
t
t
Eoff
d(on)
4
2
0
80
40
0
td(off)
t
r
Erec(off)
tf
70Ω 80
10
20
30
40
50
60
70 Ω 80
10
20
30
40
50
60
RG
RG
Fig. 9 Typ. turn on energy and switching
times versus gate resistor
Fig.10 Typ. turn off energy and switching
times versus gate resistor
70
60
50
40
30
20
10
0
350
300
250
200
150
100
50
12
10
8
TVJ = 125°C
IF = 30 A
VR = 600 V
RG
=
15
Ω
IRM
TVJ = 125°C
VR = 600 V
24
70A
Ω
39
Ω
56
Ω
50A
75
Ω
RG=
35A
tRR
6
IF=
4
15A
7,5A
2
0
0
0
200
400
600
800
1000
1200
1400
1600
1800
0
200
400
600
800
1000
1200
1400
1600
1800
-diF/dt [A/µs]
-diF/dt [A/µs]
Fig. 11 Typ. turn off characteristics
of free wheeling diode
Fig. 12 Typ. turn off characteristics
of free wheeling diode
© 2003 IXYS All rights reserved
4 - 4
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