HTZ130B33K [IXYS]
Rectifier Diode, 2 Element, 1A, 33000V V(RRM), Silicon, ZB, 3 PIN;
| 型号： | HTZ130B33K |
| 厂家： | 
IXYS CORPORATION |
| 描述： | Rectifier Diode, 2 Element, 1A, 33000V V(RRM), Silicon, ZB, 3 PIN 局域网 二极管 |
| 文件： | 总2页 (文件大小：121K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
LARONTROL
HTZ130B Series
IF(AV) = 1.0 A
VRRM = 38000 V
High Voltage
Diode Rectifier
Module
Electronic Devices
Minimum
Avalanche
Voltage
V(BR)R
Repetitive
Peak
Type
Number
HTZ130B38K
HTZ130B33K
HTZ130B28K
HTZ130B24K
38000
33000
28000
24000
40800
36000
31200
26400
CIRCUIT DIAGRAM
-VRRM-
_
+
Centre Tap
CURRENT RATINGS - AIR COOLED
IF(AV)
Mean forward current
Half wave resistive load Tamb = 35ºC
Tamb = 35ºC
1.0
1.2
A
A
IF
Continuous (direct) forward current
Thermal resistance junction to ambient
Rth(j-a)
5.7 ºC/W
CURRENT RATINGS - OIL COOLED
IF(AV)
Mean forward current
Half wave resistive load Toil = 60ºC
Toil = 60ºC
3.1
3.6
A
A
IT
Continuous (direct) forward current
Thermal resistance junction to oil
Rth(j-o)
1.2 ºC/W
SURGE RATINGS
I2t
I2t for fusing
Surge (non-repetitive) forward current
10 ms half sine Tvj = 150ºC
Tvj = 150ºC
50 A2sec
IFSM
100
A
TEMPERATURE AND FREQUENCY RATINGS
Tvj
Virtual junction temperature
Forward (conducting)
Reverse (blocking)
180
180
ºC
ºC
ºC
Hz
Tstg
Storage temperature range
Frequency range
-40 to 100
20 to 400
f
CHARACTERISTICS Tcase = 25ºC unless otherwise stated
VFM
IRM
Forward voltage
At 2 Amps peak
max 24.0
V
Peak reverse current
At VRRM; Tcase = 150°C
max 0.5 mA
184.0±0.4
159
Dimensioned Outlines
79.5
79.5
Dimensions shown are maximum in mm
32
31
Weight typ.: 0,38 Kg
MOUNTING BUSHES
TAPPED M4, 2 OFF
TAPPED M4, 3 OFF
Issue 1 June 1998
ZB
IXYS reserves the right to change limits, test conditions and dimensions.
201
Distributed by
EUROPE
USA
IXYS Semiconductor GmbH
Lampertheim Germany
Phone: +49.6206.503.0
Fax: +49.6206.503.627
3540 Bassett Street
Santa Clara, CA 95054
Phone: (408) 982-0700
FAX: (408) 496-0670
www.IXYS.net
LARONTROL
HTZ130B Series
IF(AV) = 1.0 A
VRRM = 38000 V
High Voltage
Diode Rectifier
Module
Electronic Devices
SURGE (NON_REPETITIVE) FORWARD CURRENT
VERSUS TIME with reverse voltage. TI = 150°C
Distributed by: IXYS Corporation • 3540 Bassett Street • Santa Clara, CA 95054 • Phone: 408-982-0700 • Fax: 408-496-0670
IXYS Semiconductor GmbH • Edisonstraße 15 • D-68623 Lampertheim • Phone: +49-6206-503-249 • Fax: +49-6206-503627
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