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IRFP252 [IXYS]

High Voltage Power MOSFET Die N-Channel Enhancement Mode High Ruggedness Series; 高压功率MOSFET模N沟道增强型高耐用性系列

IRFP252


元器件型号：	IRFP252
生产厂家：	IXYS CORPORATION
描述和应用：	High Voltage Power MOSFET Die N-Channel Enhancement Mode High Ruggedness Series 高压功率MOSFET模N沟道增强型高耐用性系列晶体晶体管功率场效应晶体管高压
PDF文件：	总1页 (文件大小：49K)
下载文档：	下载PDF数据表文档文件
型号参数：IRFP252参数

IRFP252R

TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | 27A I(D) | TO-247

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21 ETC

IRFP253

N-Channel(Hexfet Transistors)

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56 IRF

IRFP253

N-Channel Power Mosfets

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28 SAMSUNG

IRFP253

High Voltage Power MOSFET Die N-Channel Enhancement Mode High Ruggedness Series

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22 IXYS

IRFP253

Power Field-Effect Transistor, 25A I(D), 150V, 0.12ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3P, 3 PIN

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0 SAMSUNG

IRFP253R

TRANSISTOR | MOSFET | N-CHANNEL | 150V V(BR)DSS | 27A I(D) | TO-247

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14 ETC

IRFP254

Power MOSFET(Vdss = 250 V, Rds(on)=0.14ohm, Id=23A)

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155 IRF

IRFP254

High Voltage Power MOSFET Die N-Channel Enhancement Mode High Ruggedness Series

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59 IXYS

IRFP254

Standard Power MOSFET - N-Channel Enhancement Mode

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322 IXYS

IRFP254

Power MOSFET

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98 VISHAY

IRFP254A

$GYDQFHG 3RZHU 026)(7

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32 IRF

IRFP254A

TRANSISTOR | MOSFET | N-CHANNEL | 250V V(BR)DSS | 25A I(D) | TO-247VAR

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38 ETC

IRFP254B

250V N-Channel MOSFET

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50 FAIRCHILD

IRFP254B_FP001

Power Field-Effect Transistor, 25A I(D), 250V, 0.14ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, TO-3P, 3 PIN

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0 FAIRCHILD

IRFP254N

Power MOSFET(Vdss=250V, Rds(on)=125mohm, Id=23A)

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92 IRF

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