IXBF20N300 [IXYS]
Insulated Gate Bipolar Transistor, 27A I(C), 3000V V(BR)CES, N-Channel, PLASTIC, ISOPLUS, I4PAK-3;
| 型号： | IXBF20N300 |
| 厂家： | 
IXYS CORPORATION |
| 描述： | Insulated Gate Bipolar Transistor, 27A I(C), 3000V V(BR)CES, N-Channel, PLASTIC, ISOPLUS, I4PAK-3 栅 瞄准线 功率控制 晶体管 |
| 文件： | 总5页 (文件大小：198K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
High Voltage, High Gain
BIMOSFETTM Monolithic
Bipolar MOS Transistor
VCES
IC110
= 3000V
= 14A
IXBF20N300
VCE(sat) ≤ 3.2V
(Electrically Isolated Tab)
ISOPLUS i4-PakTM
Symbol
VCES
Test Conditions
Maximum Ratings
TC = 25°C to 150°C
3000
3000
V
V
1
2
VCGR
TJ = 25°C to 150°C, RGE = 1MΩ
Isolated Tab
5
VGES
VGEM
Continuous
Transient
± 20
± 30
V
V
1 = Gate
5 = Collector
IC25
IC110
ICM
TC = 25°C
34
14
A
A
A
2 = Emitter
TC = 110°C
TC = 25°C, 1ms
150
SSOA
(RBSOA)
VGE = 15V, TVJ = 125°C, RG = 20Ω
Clamped Inductive Load
ICM = 130
1500
A
V
PC
TC = 25°C
150
W
Features
TJ
-55 ... +150
150
°C
°C
°C
z
TJM
Tstg
Silicon Chip on Direct-Copper Bond
(DCB) Substrate
Isolated Mounting Surface
4000V~ Electrical Isolation
High Blocking Voltage
-55 ... +150
z
z
TL
TSOLD
1.6mm (0.062 in.) from Case for 10s
Plastic Body for 10 seconds
300
260
°C
°C
z
z
z
FC
Mounting Force
20..120 / 4.5..27
Nm/lb.in.
High Peak Current Capability
Low Saturation Voltage
VISOL
Weight
50/60Hz, 1 Minute
4000
5
V~
g
Advantages
z
Low Gate Drive Requirement
High Power Density
z
Symbol Test Conditions
(TJ = 25°C Unless Otherwise Specified)
Characteristic Values
Applications
Min.
3000
2.5
Typ.
Max.
BVCES
VGE(th)
ICES
IC = 250μA, VGE = 0V
IC = 250μA, VCE = VGE
VCE = 0.8 • VCES, VGE = 0V
V
z
Switch-Mode and Resonant-Mode
5.0
V
Power Supplies
Uninterruptible Power Supplies (UPS)
Laser Generators
Capacitor Discharge Circuits
z
35 μA
1.5 mA
z
Note 2, TJ = 125°C
z
IGES
VCE = 0V, VGE = ± 20V
±100 nA
z
AC Switches
VCE(sat)
IC = 20A, VGE = 15V, Note 1
2.7
3.2
3.2
V
V
TJ = 125°C
© 2012 IXYS CORPORATION, All Rights Reserved
DS100125B(06/12)
IXBF20N300
ISOPLUS i4-PakTM (HV) Outline
Symbol Test Conditions
(TJ = 25°C Unless Otherwise Specified)
Characteristic Values
Min.
Typ.
Max.
gfS
IC = 20A, VCE = 10V, Note 1
VCE = 25V, VGE = 0V, f = 1MHz
11
18
S
Cies
Coes
Cres
2230
92
pF
pF
pF
33
Qg
105
13
nC
nC
nC
Qge
Qgc
IC = 20A, VGE = 15V, VCE = 1000V
45
td(on)
tr
td(off)
tf
td(on)
tr
td(off)
tf
64
210
300
504
ns
ns
ns
ns
Resistive Switching Times, TJ = 25°C
Pin 1 = Gate
IC = 20A, VGE = 15V
Pin2 = Emitter
Pin 3 = Collector
Tab 4 = Isolated
VCE = 1250V, RG = 10Ω
68
540
300
395
ns
ns
ns
ns
Resistive Switching Times, TJ = 125°C
IC = 20A, VGE = 15V
VCE = 1250V, RG = 10Ω
RthJC
RthCS
0.83 °C/W
°C/W
0.15
Reverse Diode
Symbol Test Conditions
Characteristic Values
(TJ = 25°C Unless Otherwise Specified)
Min.
Typ.
Max.
VF
trr
IF = 20A, VGE = 0V
2.1
V
μs
A
1.35
30
IF = 10A, VGE = 0V, -diF/dt = 100A/μs
VR = 100V, VGE = 0V
IRM
Notes:
1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%.
2. Device must be heatsunk for high temperature leakage current
measurements to avoid thermal runaway.
IXYS Reserves the Right to Change Limits, Test Conditions and Dimensions.
IXYS MOSFETs and IGBTs are covered
by one or more of the following U.S. patents: 4,860,072 5,017,508
4,881,106 5,034,796
4,835,592 4,931,844
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1 6,683,344
6,534,343
6,583,505
6,727,585
6,710,405 B2 6,759,692
6,710,463
7,005,734 B2 7,157,338B2
7,063,975 B2
6,771,478 B2 7,071,537
IXBF20N300
Fig. 2. Extended Output Characteristics @ TJ = 25ºC
Fig. 1. Output Characteristics @ TJ = 25ºC
40
35
30
25
20
15
10
5
300
250
200
150
100
50
VGE = 25V
20V
VGE = 25V
20V
15V
15V
10V
10V
5V
0
0
0
0.5
1
1.5
2
2.5
3
3.5
0
2
4
6
8
10
12
14
16
18
20
150
8.5
VCE - Volts
VCE - Volts
Fig. 4. Dependence of VCE(sat) on
Junction Temperature
Fig. 3. Output Characteristics @ TJ = 125ºC
40
35
30
25
20
15
10
5
1.8
1.6
1.4
1.2
1.0
0.8
0.6
VGE = 25V
20V
VGE = 15V
15V
I C = 40A
I C = 20A
10V
I C = 10A
5V
0
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
-50
-25
0
25
50
75
100
125
VCE - Volts
TJ - Degrees Centigrade
Fig. 5. Collector-to-Emitter Voltage
vs. Gate-to-Emitter Voltage
Fig. 6. Input Admittance
50
45
40
35
30
25
20
15
10
5
5.5
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
TJ = 25ºC
I C = 40A
TJ = 125ºC
25ºC
20A
- 40ºC
10A
0
5
7
9
11
13
15
VGE - Volts
17
19
21
23
25
3.5
4.0
4.5
5.0
5.5
6.0
6.5
7.0
7.5
8.0
VGE - Volts
© 2012 IXYS CORPORATION, All Rights Reserved
IXBF20N300
Fig. 7. Transconductance
Fig. 8. Forward Voltage Drop of Intrinsic Diode
28
24
20
16
12
8
60
50
40
30
20
10
0
TJ = - 40ºC
25ºC
125ºC
TJ = 25ºC
TJ = 125ºC
4
0
0
5
10
15
20
25
30
35
40
45
50
55
0
0.5
1
1.5
VF - Volts
2
2.5
3
IC - Amperes
Fig. 10. Capacitance
Fig. 9. Gate Charge
16
14
12
10
8
10,000
1,000
100
= 1 MHz
f
VCE = 1kV
C = 20A
I G = 10mA
I
C
ies
C
oes
6
4
2
C
res
0
10
0
10
20
30
40
50
60
70
80
90
100
110
0
5
10
15
20
25
30
35
40
VCE - Volts
QG - NanoCoulombs
Fig. 12. Maximum Transient Thermal Impedance
Fig. 11. Reverse-Bias Safe Operating Area
1
140
120
100
80
D = 0.50
D = 0.20
D = 0.10
D = 0.05
0.1
60
D = tp / T
tp
40
TJ = 125ºC
G = 20Ω
dv / dt < 10V / ns
R
D = 0.02
D = 0.01
20
T
Single Pulse
0.0001
0
0.01
250
500
750 1000 1250 1500 1750 2000 2250 2500 2750 3000
VCE - Volts
0.000001 0.00001
0.001
0.01
0.1
1
10
Pulse Width - Seconds
IXYS Reserves the Right to Change Limits, Test Conditions and Dimensions.
IXBF20N300
Fig. 14. Resistive Turn-on Rise Time vs.
Fig. 13. Resistive Turn-on Rise Time vs.
Junction Temperature
Collector Current
700
600
500
400
300
200
100
0
700
600
500
400
300
200
100
0
RG = 10Ω , VGE = 15V
RG = 10Ω , VGE = 15V
VCE = 1250V
VCE = 1250V
TJ = 125ºC
I C = 20A
I C = 40A
TJ = 25ºC
10
25
10
15
20
25
30
35
40
25
10
10
35
45
55
65
75
85
95
105
115
125
TJ - Degrees Centigrade
IC - Amperes
Fig. 16. Resistive Turn-off Switching Times vs.
Junction Temperature
Fig. 15. Resistive Turn-on Switching Times vs.
Gate Resistance
850
800
750
700
650
600
550
500
450
200
700
600
500
400
300
200
100
350
330
310
290
270
250
230
tf
t
d(off) - - - -
t r
t
180
160
140
120
100
80
d(on) - - - -
RG = 10Ω, VGE = 15V
TJ = 125ºC, VGE = 15V
VCE = 1250V
VCE = 1250V
I C = 20A
I C = 20A, 40A
I C = 40A
60
40
35
45
55
65
75
85
95
105
115
125
20
30
40
50
60
70
80
TJ - Degrees Centigrade
RG - Ohms
Fig. 17. Resistive Turn-off Switching Times vs.
Collector Current
Fig. 18. Resistive Turn-off Switching Times vs.
Gate Resistance
1200
1000
800
600
400
200
0
460
420
380
340
300
260
220
600
550
500
450
400
350
300
250
200
1600
1400
1200
1000
800
600
400
200
0
tf
td(off
) - - - -
t f
t
d(off) - - - -
TJ = 125ºC, VGE = 15V
RG = 10Ω, VGE = 15V
VCE = 1250V
VCE = 1250V
I C = 20A
I C = 40A
TJ = 125ºC, 25ºC
30
20
30
40
50
60
70
80
15
20
25
IC - Amperes
35
40
RG - Ohms
© 2012 IXYS CORPORATION, All Rights Reserved
IXYS REF: B_20N300(5P)6-05-12-B
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