IXBOD1-16RD_技术文档

Breakover Diodes

Applications

l

Transient voltage protection

High-voltage switches

Crowbar

Lasers

l

Pulse generators

i

I_H

I_BO

V

V_BO

V_H

Application Note H - 6

Remark: For special selection of more than 2 pieces IXBOD 1-... for every

break down voltage of V_BO> 2000 V please contact us.

H - 1

IXBOD 1 -06...10

V_BO= 600-1000V

I_AVM= 0.9 A

Single Breakover Diode

V_BO

V

Standard

Types

A

K

600 ±50

700 ±50

800 ±50

900 ±50

1000 ±50

IXBOD 1 -06

IXBOD 1 -07

IXBOD 1 -08

IXBOD 1 -09

IXBOD 1 -10

Symbol

Conditions Ratings

I_D

T_VJ= 125°C;

V = 0,8x V_BO

20

µA

V_BO

I_RMS

V_BO(T_VJ) = V_{BO, 25°C}[1 + K_T(T_VJ- 25°C)]

f = 50 HZ;

T_amb= 50°C

1.4

A

connection pins soldered to printed circuit

(conductor 0,035x2mm)

I_AVM

I_SM

I²t

0.9

200

2

A

t_p= 0.1 ms;

T_amb= 50°C non repetitive

T_amb= 50°C

A²s

T_amb

T_stg

-40...+125

125

°C

T_VJm

°C

Dimensions in mm (1 mm = 0.0394")

K_TTemperatur coefficient of V_BO

K_Pcoefficient for energy per pulse E_P(material constant)

2·10^-3

K^-1

700

K/Ws

R_thJA

- natural convection

- with air speed 2 m/s

60

45

K/W

Weight

1

g

Symbol

Conditions

Characteristic Values

I_BO

T_VJ

=

25°C

50°C;

15

30

mA

V

I_H

V_H

4 - 8

(dv/dt)_C

(di/dt)_C

V_D= 0.67·(V_BO+ 100V)

> 1000

200

V/µs

A/µs

K

A

T_VJ= 125°C;

T_VJ= 125°C

V_D= V_BO; I_T= 80A; f = 50 Hz

t_q(typ)

V_D= 0.67·V_BO; V_R= 0V

150

µs

dV/dt_(lin.)= 200V/µs; I_T= 80A; di/dt = -10A/µs

V_T

T_VJ=125°C; I_T= 5A

1.7

V

V_(TO)

r_T

For power-loss calculations only

T_VJ= 125°C

1.1

0.12

V

Ω

IXYS reserve at these the right to change limits, test conditions and dimensions; Data according to IEC 60747

H - 2

IXBOD 1 -06...10

Fig. 1 Energy per pulse for trapezoidal current wafeforms

(see waveform definition).

Fig. 2 Energy per pulse for exponentially decaying

current pulse (see waveforms definition).

V_a= 0 m/s

V_a= 2 m/s

[V]

V_T

[K/W]

Z_thJA

T_VJ= 125°C

T_VJ= 25°C

i_T[A]

t

[s]

Fig. 3 On-state voltage

Fig. 4 Transient thermal resistance.

H - 3

IXBOD 1 -12R...42R(D)

Version: RD

Breakover Diode Modules

Version: R

V_BO

V

Standard

Types

BOD -

V_BO

V

Standard

Types

BOD -

V_BO

V

Standard

Types

BOD -

Elements

1200 ±50 IXBOD 1 -12R(D)

1300 ±50 IXBOD 1 -13R(D)

1400 ±50 IXBOD 1 -14R(D)

1500 ±50 IXBOD 1 -15R(D)

1600 ±50 IXBOD 1 -16R(D)

1700 ±50 IXBOD 1 -17R(D)

1800 ±50 IXBOD 1 -18R(D)

1900 ±50 IXBOD 1 -19R(D)

2

2000 ±50 IXBOD 1 -20R(D)

2100 ±50 IXBOD 1 -21R(D)

2200 ±50 IXBOD 1 -22R(D)

2300 ±50 IXBOD 1 -23R(D)

2400 ±50 IXBOD 1 -24R(D)

2500 ±50 IXBOD 1 -25R(D)

2600 ±100 IXBOD 1 -26R(D)

2800 ±100 IXBOD 1 -28R(D)

3000 ±100 IXBOD 1 -30R(D)

3200 ±100 IXBOD 1 -32R(D)

3

3400 ±100 IXBOD 1 -34R

3600 ±100 IXBOD 1 -36R

3800 ±100 IXBOD 1 -38R

4000 ±100 IXBOD 1 -40R

4200 ±100 IXBOD 1 -42R

4

2-3 BODs

Symbol

Test Conditions

T_VJ

2 BODs

3 BODs

4 BODs

D-Version

I_D

=

125°C;V = 0,8x V_BO

100

µA

V_BO

I_RMS

V_BO(T_VJ) = V_{BO, 25°C}[1 + K_T(T_VJ- 25°C)]

f = 50 HZ;

T_amb= 50°C

2.0

1.4

1.1

0.3

A

connection pins soldered to printed circuit

(conductor 0,035x2mm)

I_AVM

I_SM

I²t

1.25

200

2

0.9

200

2

0.7

200

2

0.2

50

A

A²s

t_p= 0.1 ms; T_amb= 50°C non repetitive

t_p= 0.1 ms; T_amb= 50°C

T_VJ=125°C; I_T= 5A

0.125

27

V_T

3.4

2.2

0.24

5.1

3.3

0.36

6.8

4.4

0.48

V

V_(TO)

r_T

For power-loss calculations only

T_VJ=125°C

17.5

3

V

Ω

T_amb

T_stg

T_VJm

-40...+125

125

-40...+125

125

-40...+125

125

-40...+125

125

°C

K^-1

K_TTemperatur coefficient of V_BO

2·10^-3

K_Pcoefficient for energy per pulse E_P(material constant)

700

K/Ws

R_thJA

- natural convection

- with air speed 2 m/s

20

16

20

16

20

16

20

16

K/W

Weight

typical

14

g

Symbol

I_BO

Test Conditions Characteristic Values both Versions R & RD 2 BODs

3 BODs

15

4 BODs

15

T_VJ

=

25°C

15

30

mA

V

I_H

30

V_H

4 - 8

(dv/dt)_C

50°C;

V_D= 0.67·(V_BO+ 100V)

- V_BO

bis 1500V

> 1000

> 1500

-

V/µs

- V_BO1600 - 2000V

- V_BO2100 - 2500V

- V_BO2600 - 3000V

- V_BO3200 - 3400V

- V_BO3600 - 4200V

-

> 2000

> 2500

-

> 3000

> 3500

(di/dt)_C

t_q(typ)

T_VJ= 125°C;

V_D= V_BO; I_T= 80A; f = 50 Hz

200

150

200

150

200

150

A/µs

µs

T_VJ= 125°C

V_D= 0.67·V_BO; V_R= 0V

dv/dt_(lin.)= 200V/µs; I_T= 80A; di/dt = -10A/µs

IXYS reserve at these the right to change limits, test conditions and dimensions; Data according to IEC 60747

H - 4

IXBOD 1 -12R...42R(D)

A

K

A

K

Dimensions in mm (1 mm = 0.0394")

Fig. 5 Energy per pulse for single BOD element

for trapezoidal wave current. E_Pmust be multiplied

by number of elements for total energy.

Fig. 6 Energy per pulse for single BOD element

for exponentially decaying current pulse. E_Pmust

be multiplied by number of elements for total

energy.

n = number of BOD-Elements in series

[V]

V_T

[K/W]

Z_thJA

V_a= 0 m/s

V_a= 2 m/s

t

[s]

i_T[A]

Fig. 7 On-state voltage at T_VJ= 125°C.

Fig. 8 Transient thermal resistance.

H - 5

Application

i

Protection of thyristors against overvoltages in forward

direction.

Thyristor

BOD

V_BO(T_VJ) = V_{BO, 25°C}[1+KT(T_VJ- 25°C)]

V_D

Calculation example

a. The maximum junction temperature shall be

calculated for a module IXBOD 1 -30R at an

ambient temperature T_a= 60 °C, an exponentially

decaying current I_TM= 40A, a pulsewidth tp = 2 µs,

an operating frequency f = 50 Hz and natural

convection. From the diagram Fig. 6 the energy per

pulse is obtained:

b. If following these steady-state conditions an

overload for 1 minute occurs with I_TM= 60 A and a

pulse-width tp = 4 µs at the same operating

frequency f = 50 Hz, then the resulting maximum

junction temperature is calculating as follows:

T_VJmax2= T_VJmax1+ (E_p2-E_p1) • n • f •Z_thJA(t) + Kp • (E_p2-E_p1)

The diagrams Fig. 11 and Fig. 8 show

E_p1= 6 x 10^-3Ws

For a module IXBOD1-30R the number of single

IXBOD elements is:

E_p2= 14x10^-3Ws

n = 3

Z_thJA(t = 1min) = 12K/W

At natural air cooling the thermal resistance junction

to ambient amounts to (Fig.8):

From what follows:

R_thJA= 20K/W

T_VJmax2= 82.2 + 14.4 + 5,6 = 102.2 °C

and the unknown temperature can be calculated as:

T_VJmax1= T_a+ n • f • E_p• R_thJA+ K_p• E_p

T_VJmax1= 60 + 18 + 4.2 = 82.2°C

which is allowed because the maximum admissible

junction temperature T_VJM= 125 °C.

H - 6

Example of a circuit

A simple emergency triggering circuit.

R₁

R₃

T

: Thyristor

R₁

D₁

D₃

D₄

: Current limiting resistance (0 - 200 Ω)

: Series-diode (fast recovery diode)

: Protection diode

D₁

T

IXBOD

: Zener diode, typical V_Z: 3-6 V

z

R₂, C₂: Protection against parasitic triggering;

recommended values:

D₄D₃

C₂

C₃

R₂: 100 - 1000 Ω

C₂: 22 - 47 nF

R₂

R₃, C₃: Snubber network of the thyristor

Notice

40

A

1. A IXBOD element has a maximum reverse

blocking voltage of 10V.

I_R

20

2. For higher reverse voltages a fast, soft recovery

diode must be connected in series (Fig. 9).

This diode must fulfill the conditions of Fig. 10.

10

8

6

4

i

I_R

2

1

t

t_B

0,1

µs

1

2 3 5 7 10

Fast recovery

diode

IXBOD single

or

t_B

IXBOD module

Fig. 10 Maximum peak value of the

reverse current admissible for a given

pulse-width t_B, which is required for the

suitable fast recovery series-diode.

Fig. 9 IXBOD protection by a fast recovery

diode.

H - 7

H - 8


型号：	IXBOD1-16RD
厂家：	IXYS CORPORATION
描述：	RVS Blocking BOD, 1600V V(BO) Max,
文件：	总8页 (文件大小：255K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

IXBOD1-16RD [IXYS]

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