IXCP10M45S [IXYS]
Switchable Current Regulators; 开关电流稳压器
| 型号： | IXCP10M45S |
| 厂家： | 
IXYS CORPORATION |
| 描述： | Switchable Current Regulators |
| 文件： | 总2页 (文件大小：520K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SwitchableCurrent
Regulators
IXCP 10M45S
IXCY 10M45S
VAK =
IA(P) = 2 - 100 mA
450
V
RDYN = 9 - 900 kΩ
Symbol
TestCondition
Maximum Ratings
TO-220 AB (IXCP)
VAKR
VAGR
TJ = 25°C to 150°C
TJ = 25°C to 150°C
10M35S
10M35S
450
450
V
V
A
G
VGK
ID
20
-0.3
40
V
A
A
K
TO-252 AA
(IXCY)
TC = 25°C
TC = 25°C
A
PD
W
G
T
TLstg
-55 ... +150
-55 ... +150
260
°C
°C
°C
TJ
K
Temperature for Soldering (max. 10 s)
Pinconnections
MD
Mounting torque with screw M3 (TO-220)
with screw M3.5 (TO-220)
0.45/4 Nm/lb.in.
0.55/5 Nm/lb.in.
1 = G, Control terminal;
2 and 4 = A (+) Positive terminal
3 = K (-), Negative terminal
Features
Symbol
TestCondition
Characteristic Values
z Minimum of 350/450 V
breakdown
(TJ = 25°C unless otherwise specified)
min.
450
7
typ.
max.
z Resistor programmable current
source
VAKR
IA(P)
RK = 300 Ω, (Fig. 4)
10M35S
V
z 40 W continuous dissipation
z International standard packages
JEDEC TO-220 and TO-252
VD = 10 V; RK = 300 Ω; (Fig. 5)
10
15 mA
V
z On/Off switchable current source
VG(off)
ID = 100 µA; VD = 400 V 10M45S
-5
Fig. 4
Applications
IAV
VD= 400 V; VGK = -10 V 10M45S
Fig. 4
25
µA
z Start-up circuits for SMPS
z Highly stable voltage sources
z Surge limiters and voltage protection
z Instantaneously reacting resetable
fuses
∆VAK/∆ IA(p
Dynamic resistance; VD= 10 V
160
kΩ
RK = 300 Ω; (Fig. 4)
z Soft start-up circuits
RthJC
RthJA
Thermal Resistance junction-to-case
Thermal Resistance junction-to-ambient TO-220
TO-252
3.1 K/W
80 K/W
100 K/W
DS98704(07/04)
© 2004 IXYS All rights reserved
IXCP 10M45S
IXCY 10M45S
TO-220 AB Outline
ID(p)
A (+)
G
VD
K
(-)
RK
Fig. 1 Resistor R in series with negative pin
to achieve Kdifferent current levels
100
10
1
TO-252 AA Outline
10
100
1000
10000
Series Resistor RK - Ohms
Fig. 2. Plateau current versus external resistance
ID(p)
A (+)
VD
G
VGK
K
(-)
Fig. 3. Current regulator controlled by VG
1000
Dim.
Millimeter
Inches
Max.
Min. Max. Min.
A
A1
2.19 2.38 0.086 0.094
0.89 1.14 0.035 0.045
A2
b
b1
b2
c
c1
0
0.13
0
0.005
100
10
1
0.64 0.89 0.025 0.035
0.76 1.14 0.030 0.045
5.21 5.46 0.205 0.215
0.46 0.58 0.018 0.023
0.46 0.58 0.018 0.023
D
5.97 6.22 0.235 0.245
D1 4.32 5.21 0.170 0.205
E
E1
6.35 6.73 0.250 0.265
4.32 5.21 0.170 0.205
e
2.28 BSC
4.57 BSC
9.40 10.42 0.370 0.410
0.51 1.02 0.020 0.040
0.64 1.02 0.025 0.040
0.89 1.27 0.035 0.050
2.54 2.92 0.100 0.115
0.090 BSC
0.180 BSC
e1
0.1
H
L
L1
L2
L3
-3.5
-3.0
-2.5
VGS - Volts
-2.0
-1.5
-1.0
Fig. 4. Plateau current versus applied input voltage
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYSMOSFETs andIGBTsarecovered by
oneormoreofthefollowingU.S.patents:
4,835,592
4,850,072
4,881,106
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5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123B1
6,306,728 B1
6,404,065B1
6,534,343
6,583,505
6,683,344
6,710,405B2
6,710,463
6,727,585
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