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IXFD34N80-9X [IXYS]

Power Field-Effect Transistor, 800V, 0.25ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, 0.559 X 0.417 INCH, DIE;
IXFD34N80-9X
型号： IXFD34N80-9X
厂家： IXYS CORPORATION    IXYS CORPORATION
描述：

Power Field-Effect Transistor, 800V, 0.25ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, 0.559 X 0.417 INCH, DIE

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HiPerFETTM Power MOSFET  
HiPerFETTM Power MOSFETs  
Chip size  
dimensions  
Type  
VDSS  
max.  
RDS(ON)  
max.  
Chip  
type  
Source -  
bond wire  
recommended  
Equivalent  
device  
data sheet  
The High Performance MOSFET family of Power  
MOSFETs is designed to provide superior dv/dt  
performance while eliminating the need for discrete,  
fast recovery "free wheeling diodes" in a broad range of  
power switching applications.  
V
Ω
mm  
mils  
IXFD76N07-7X  
IXFD180N07-9X  
IXFD340N07-9Y  
70  
0.015  
0.007  
0.005  
7X  
9X  
9Y  
8.84 x 7.18  
14.20 x 10.60  
15.81 x 14.31  
348 x 283  
559 x 417  
623 x 563  
15 mil x 3  
15 mil x 6  
12 mil x 12  
IXFH76N07  
IXFK180N07  
IXFN340N07  
This class of Power MOSFET uses IXYS' HDMOS  
process,whichimprovestheruggednessoftheMOSFET  
while reducing the reverse recovery time of the fast  
intrinsic diode to 250 ns or less at elevated (150°C)  
junction temperature. The performance of the fast  
intrinsic diode is comparable to discrete high voltage  
diodes and is tailored to minimize power dissipation  
and stress in the MOSFET.  
IXFD180N085-9X  
IXFD280N085-9Y  
85  
0.007  
0.005  
9X  
9Y  
14.20 x 10.60  
15.81 x 14.31  
559 x 417  
623 x 563  
15 mil x 6  
12 mil x 12  
IXFK180N085  
IXFN280N085  
IXFD75N10-7X  
IXFD80N10Q-8X  
IXFD170N10-9X  
IXFD230N10-9Y  
100  
0.026  
0.018  
0.011  
0.007  
7X  
8X  
9X  
9Y  
8.84 x 7.18  
12.2 x 7.20  
14.20 x 10.60  
15.81 x 14.31  
348 x 283  
480 x 283  
559 x 417  
623 x 563  
15 mil x 3  
15 mil x 4  
15 mil x 6  
12 mil x 12  
IXFH75N10  
IXFH80N10Q  
IXFK170N10  
IXFN230N10  
IXFD70N15-7X  
IXFD150N15-9X  
150  
200  
0.032  
0.013  
7X  
9X  
8.84 x 7.18  
14.20 x 10.60  
348 x 283  
559 x 417  
15 mil x 3  
15 mil x 6  
IXFH70N15  
IXFK150N15  
IXFD50N20-7X  
IXFD60N20F-74  
IXFD66N20Q-72  
IXFD88N20Q-82  
IXFD120N20-9X  
IXFD180N20-9Y  
0.049  
0.042  
0.044  
0.035  
0.020  
0.014  
7X  
74  
72  
82  
9X  
9Y  
8.84 x 7.18  
9.58 x 7.13  
8.89 x 7.16  
12.17 x 7.14  
14.20 x 10.60  
15.81 x 14.31  
348 x 283  
377 x 281  
350 x 282  
479 x 281  
559 x 417  
623 x 563  
15 mil x 3  
15 mil x 3  
15 mil x 3  
15 mil x 4  
15 mil x 6  
12 mil x 12  
IXFH50N20  
IXFH60N20F  
IXFH66N20Q  
IXFH88N20Q  
IXFK120N20  
IXFN180N20  
IXFD40N30Q-72  
IXFD40N30-7X  
IXFD52N30Q-82  
IXFD73N30Q-8Y  
IXFD90N30-9X  
IXFD130N30-9Y  
300  
0.095  
0.090  
0.075  
0.050  
0.040  
0.028  
72  
7X  
82  
8Y  
9X  
9Y  
8.89 x 7.16  
8.84 x 7.18  
12.17 x 7.14  
13.98 x 9.02  
14.20 x 10.60  
15.81 x 14.31  
350 x 282  
348 x 283  
479 x 281  
550 x 355  
559 x 417  
623 x 563  
15 mil x 3  
15 mil x 3  
15 mil x 4  
12 mil x 6  
15 mil x 6  
12 mil x 12  
IXFH40N30Q  
IXFH40N30  
IXFH52N30Q  
IXFK73N30Q  
IXFK90N30  
IXFN130N30  
This table reflects only new designed chips. Please contact factory for older designs.  
© 2004 IXYS All rights reserved  
8
HiPerFETTM Power MOSFET  
HiPerFETTMs offer extended dv/dt ruggedness  
Chip size  
dimensions  
Type  
VDSS  
max.  
RDS(ON)  
max.  
Chip  
type  
Source -  
bond wire  
recommended  
Equivalent  
device  
data sheet  
The HiPerFETTM series of Power MOSFETs have an  
extended stress capability in applications where the  
intrinsic "free-wheeling diode" is used. Both static and  
dynamic dv/dt withstand capability have been improved  
to offer a significant margin of safety in high stress  
conditions found in many types of inductive load  
switching applications.  
V
Ω
mm  
mils  
IXFD13N50F-5F  
IXFD21N50F-7F  
IXFD24N50-7X  
IXFD26N50Q-72  
IXFD28N50F-74  
IXFD32N50-8X  
IXFD40N50Q-82  
IXFD40N50Q2-84  
IXFD44N50F-8F  
IXFD48N50Q-8Y  
IXFD55N50-9X  
IXFD55N50F-9F  
IXFD66N50Q2-94  
IXFD80N50Q2-95  
IXFD80N50-9Y  
500  
0.420  
0.270  
0.250  
0.235  
0.220  
0.160  
0.150  
0.150  
0.130  
0.110  
0.100  
0.100  
0.085  
0.070  
0.060  
5F  
7F  
7X  
72  
74  
8X  
82  
84  
8F  
8Y  
9X  
9F  
94  
95  
9Y  
7.35 x 5.91  
8.89 x 7.16  
8.84 x 7.18  
8.89 x 7.16  
9.58 x 7.13  
289 x 233  
350 x 282  
348 x 283  
350 x 282  
377 x 281  
480 x 283  
479 x 281  
479 x 281  
550 x 355  
550 x 355  
559 x 417  
559 x 417  
559 x 417  
623 x 492  
623 x 563  
10 mil x 4  
15 mil x 3  
15 mil x 3  
15 mil x 3  
15 mil x 3  
15 mil x 4  
15 mil x 4  
15 mil x 4  
12 mil x 6  
12 mil x 6  
15 mil x 6  
15 mil x 6  
15 mil x 6  
15 mil x 6  
12 mil x 12  
IXFH13N50F  
IXFH21N50F  
IXFH24N50  
IXFH26N50Q  
IXFH28N50F  
IXFH32N50  
IXFH40N50Q  
IXFH40N50Q2  
IXFK48N50Q  
IXFK48N50Q  
IXFK55N50  
IXFK55N50F  
IXFK66N50Q2  
IXFB80N50Q2  
IXFN80N50  
12.2 x 7.20  
12.17 x 7.14  
12.17 x 7.15  
13.98 x 9.02  
13.98 x 9.02  
14.20 x 10.60  
14.20 x 10.60  
14.20 x 10.60  
15.81 x 12.50  
15.81 x 14.31  
IXFD36N55Q2-84  
IXFD72N55Q2-95  
IXFD60N55Q2-94  
550  
600  
0.180  
0.080  
0.010  
84  
95  
94  
12.17 x 7.15  
15.81 x 12.50  
14.20 x 10.60  
479 x 281  
623 x 492  
559 x 417  
15 mil x 4  
15 mil x 6  
15 mil x 6  
IXFH36N55Q2  
IXFB72N55Q2  
IXFK60N55Q2  
IXFD23N60Q-72  
IXFD20N60-7X  
IXFD30N60Q-82  
IXFD36N60Q-8Y  
IXFD44N60-9X  
IXFD52N60Q2-94  
IXFD70N60Q2-95  
IXFD60N60-9Y  
0.350  
0.350  
0.250  
0.170  
0.140  
0.130  
0.090  
0.090  
72  
7X  
82  
8Y  
9X  
94  
95  
9Y  
8.89 x 7.16  
8.84 x 7.18  
350 x 282  
348 x 283  
479 x 281  
550 x 355  
559 x 417  
559 x 417  
623 x 492  
623 x 563  
15 mil x 3  
15 mil x 3  
15 mil x 4  
12 mil x 6  
15 mil x 6  
15 mil x 6  
15 mil x 6  
12 mil x 12  
IXFH23N60Q  
IXFH20N60  
IXFH30N60Q  
IXFK36N60Q  
IXFK44N60  
IXFK52N60Q2  
IXFB70N60Q2  
IXFN60N60  
12.17 x 7.14  
13.98 x 9.02  
14.20 x 10.60  
14.20 x 10.60  
15.81 x 12.50  
15.81 x 14.31  
This table reflects only new designed chips. Please contact factory for older designs.  
9
© 2004 IXYS All rights reserved  
HiPerFETTM Power MOSFET  
‘Q - Class’ and ‘Q2 - Class’ HiPerFETTM MOSFETs  
for Lower Gate Charge and Faster Switching  
Chip size  
dimensions  
Type  
VDSS  
max.  
RDS(ON)  
max.  
Chip  
type  
Source -  
bond wire  
Equivalent  
device  
New ‘Q - class‘ HiPerFET MOSFETs (identified by  
the suffix letter Q) are the result of a revolutionary  
new chip design, which decreases the MOSFET‘s  
total gate charge Qg and the Miller capacitance Crss,  
while maintaining the ruggedness and fast switching  
intrinsic diode of the company‘s current HiPerFET  
product line.The result is a MOSFET with dramatically  
improved switching efficiencies and thus enabling  
higher frequency operation and smaller power  
supplies.  
recommended  
data sheet  
V
800  
Ω
mm  
8.84 x 7.18  
8.89 x 7.16  
8.89 x 7.16  
12.2 x 7.20  
12.17 x 7.14  
13.98 x 9.02  
14.20 x 10.60  
14.20 x 10.60  
15.81 x 12.50  
15.81 x 14.31  
mils  
IXFD15N80-7X  
IXFD15N80Q-7Y  
IXFD17N80Q-72  
IXFD20N80Q-8X  
IXFD23N80Q-82  
IXFD27N80Q-8Y  
IXFD34N80-9X  
IXFD38N80Q2-94  
IXFD50N80Q2-95  
IXFD44N80-9Y  
0.700  
0.700  
0.670  
0.450  
0.440  
0.350  
0.250  
0.250  
0.170  
0.160  
7X  
7Y  
72  
8X  
82  
8Y  
9X  
94  
95  
9Y  
348 x 283  
350 x 282  
350 x 282  
480 x 283  
479 x 281  
550 x 355  
559 x 417  
559 x 417  
623 x 492  
623 x 563  
15 mil x 3  
15 mil x 3  
15 mil x 3  
15 mil x 4  
15 mil x 4  
12 mil x 6  
15 mil x 6  
15 mil x 6  
15 mil x 6  
12 mil x 12  
IXFH15N80  
IXFH15N80Q  
IXFH17N80Q  
IXFH20N80Q  
IXFH23N80Q  
IXFK27N80Q  
IXFK34N80  
IXFK38N80Q2  
IXFB50N80Q2  
IXFN44N80  
The newer ‘Q2-Class’ line combines the low gate  
charge advantages of Q-Class with a double-metal  
construction resul-ting in a new generation of  
MOSFETs with an intrinsic gate resistance an order  
of magnitude lower than conventional MOSFETs. The  
resulting reduction in switching losses allows large  
MOSFETs to operate up satisfactorily up to the multi-  
megahertz region.  
IXFD12N90-7L  
IXFD16N90Q-8X  
IXFD24N90Q-8Y  
IXFD26N90-9X  
IXFD39N90-9Y  
900  
0.900  
0.650  
0.500  
0.330  
0.220  
7L  
8X  
8Y  
9X  
9Y  
8.91 x 7.22  
12.2 x 7.20  
13.98 x 9.02  
14.20 x 10.60  
15.81 x 14.31  
351 x 284  
480 x 283  
550 x 355  
559 x 417  
623 x 563  
12 mil x 4  
15 mil x 4  
12 mil x 6  
15 mil x 6  
12 mil x 12  
IXFH12N90  
IXFH16N90Q  
IXFK24N90Q  
IXFK26N90  
IXFN39N90  
IXFD6N100F-5F  
IXFD6N100Q-5U  
IXFD10N100-7Y  
IXFD14N100Q2-7F  
IXFD14N100-8X  
IXFD21N100Q-8Y  
IXFD21N100F-8F  
IXFD24N100-9X  
IXFD24N100F-9F  
IXFD38N100Q2-95  
IXFD36N100-9Y  
1000  
2.000  
2.000  
1.200  
1.000  
0.750  
0.520  
0.520  
0.420  
0.420  
0.280  
0.270  
5F  
5U  
7Y  
7F  
8X  
8Y  
8F  
9X  
9F  
95  
9Y  
7.35 x 5.91  
6.81 x 6.74  
8.89 x 7.16  
8.89 x 7.16  
12.2 x 7.20  
13.98 x 9.02  
13.98 x 9.02  
14.20 x 10.60  
14.20 x 10.60  
15.81 x 12.50  
15.81 x 14.31  
289 x 233  
268 x 265  
350 x 282  
350 x 282  
480 x 283  
550 x 355  
550 x 355  
559 x 417  
559 x 417  
623 x 492  
623 x 563  
10 mil x 2  
10 mil x 2  
15 mil x 3  
12 mil x 4  
15 mil x 4  
12 mil x 6  
12 mil x 6  
15 mil x 6  
15 mil x 6  
15 mil x 6  
12 mil x 12  
IXFH6N100F  
IXFH6N100Q  
IXFH10N100  
IXFH14N100Q2  
IXFH14N100  
IXFK21N100Q  
IXFK21N100F  
IXFK24N100  
IXFK24N100F  
IXFB38N100Q2  
IXFN36N100  
IXFD3N120-4U  
1200  
4.500  
4U  
5.77 x 4.96  
227 x 195  
12 mil x 1  
IXFP3N120  
This table reflects only new designed chips. Please contact factory for older designs.  
© 2004 IXYS All rights reserved  
10  

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