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IXFH14N60P3 [IXYS]

Power Field-Effect Transistor, 14A I(D), 600V, 0.54ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD, PLASTIC, TO-247, 3 PIN;
IXFH14N60P3
型号： IXFH14N60P3
厂家： IXYS CORPORATION    IXYS CORPORATION
描述：

Power Field-Effect Transistor, 14A I(D), 600V, 0.54ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD, PLASTIC, TO-247, 3 PIN

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Preliminary Technical Information  
Polar3 TM HiPerFETTM  
Power MOSFETs  
VDSS = 600V  
ID25 = 14A  
RDS(on) 540m  
IXFA14N60P3  
IXFP14N60P3  
IXFH14N60P3  
N-Channel Enhancement Mode  
Avalanche Rated  
TO-263 (IXFA)  
Fast Intrinsic Rectifier  
G
S
D (Tab)  
TO-220 (IXFP)  
Symbol  
VDSS  
Test Conditions  
Maximum Ratings  
TJ = 25C to 150C  
600  
600  
V
V
VDGR  
TJ = 25C to 150C, RGS = 1M  
VGSS  
VGSM  
Continuous  
Transient  
30  
40  
V
V
G
D
D (Tab)  
S
ID25  
IDM  
TC = 25C  
14  
35  
A
A
TO-247 (IXFH)  
TC = 25C, Pulse Width Limited by TJM  
IA  
TC = 25C  
TC = 25C  
7
A
EAS  
700  
mJ  
G
D
dv/dt  
PD  
IS IDM, VDD VDSS, TJ 150C  
TC = 25C  
35  
V/ns  
W
D (Tab)  
S
327  
TJ  
-55 ... +150  
150  
C  
C  
C  
G = Gate  
S = Source  
D
= Drain  
TJM  
Tstg  
Tab = Drain  
-55 ... +150  
TL  
TSOLD  
Maximum Lead Temperature for Soldering  
Plastic Body for 10s  
300  
260  
°C  
°C  
Features  
FC  
Md  
Mounting Force (TO-263)  
Mounting Torque (TO-220 & TO-247)  
10..65 / 2.2..14.6  
1.13 / 10  
N/lb  
Nm/lb.in  
International Standard Packages  
Fast Intrinsic Rectifier  
Avalanche Rated  
Low RDS(ON) and QG  
Low Package Inductance  
Weight  
TO-263  
TO-220  
TO-247  
2.5  
3.0  
6.0  
g
g
g
Advantages  
High Power Density  
Easy to Mount  
Space Savings  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25C, Unless Otherwise Specified)  
Min.  
Typ.  
Max.  
BVDSS  
VGS(th)  
IGSS  
VGS = 0V, ID = 1mA  
VDS = VGS, ID = 1mA  
VGS = 30V, VDS = 0V  
VDS = VDSS, VGS = 0V  
600  
V
V
Applications  
3.0  
5.0  
100 nA  
Switch-Mode and Resonant-Mode  
Power Supplies  
DC-DC Converters  
Laser Drivers  
AC and DC Motor Drives  
IDSS  
25 A  
750 μA  
TJ = 125C  
RDS(on)  
VGS = 10V, ID = 0.5 • ID25, Note 1  
540 m  
Robotics and Servo Controls  
DS100423A(11/13)  
© 2013 IXYS CORPORATION, All Rights Reserved  
IXFA14N60P3 IXFP14N60P3  
IXFH14N60P3  
Symbol  
Test Conditions  
Characteristic Values  
TO-220 (IXFP) Outline  
(TJ = 25C, Unless Otherwise Specified)  
Min.  
Typ.  
Max  
gfs  
VDS = 20V, ID = 0.5 • ID25, Note 1  
Gate Input Resistance  
9
15  
S
RGi  
2.8  
Ciss  
Coss  
Crss  
1480  
178  
7
pF  
VGS = 0V, VDS = 25V, f = 1MHz  
pF  
pF  
td(on)  
tr  
td(off)  
tf  
21  
15  
43  
16  
ns  
ns  
ns  
ns  
Resistive Switching Times  
V
GS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25  
RG = 10(External)  
Pins: 1 - Gate  
2 - Drain  
3 - Source  
Qg(on)  
Qgs  
25  
6.3  
11  
nC  
nC  
nC  
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25  
Qgd  
RthJC  
RthCS  
0.38 C/W  
TO-220  
TO-247  
0.50  
0.21  
C/W  
C/W  
Source-Drain Diode  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25C, Unless Otherwise Specified)  
Min.  
Typ.  
Max  
IS  
VGS = 0V, Note1  
14  
A
A
TO-247 (IXFH) Outline  
ISM  
VSD  
Repetitive, Pulse Width Limited by TJM  
IF = IS, VGS = 0V, Note 1  
56  
1.4  
V
trr  
250  
ns  
IF = 14A, -di/dt = 50A/μs  
QRM  
IRM  
0.6  
5.7  
C  
VR = 100V  
A
Note 1. Pulse test, t 300s, duty cycle, d 2%.  
1 - Gate  
2,4 - Drain  
3 - Source  
TO-263 Outline  
1 = Gate  
2 = Drain  
3 = Source  
4 = Drain  
Bottom Side  
PRELIMANARY TECHNICAL INFORMATION  
The product presented herein is under development. The Technical Specifications offered are  
derived from a subjective evaluation of the design, based upon prior knowledge and experi-  
ence, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right  
to change limits, test conditions, and dimensions without notice.  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXYS MOSFETs and IGBTs are covered  
by one or more of the following U.S. patents: 4,860,072 5,017,508  
4,881,106 5,034,796  
4,835,592 4,931,844  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,381,025  
5,486,715  
6,162,665  
6,259,123B1  
6,306,728B1  
6,404,065B1  
6,534,343  
6,583,505  
6,683,344  
6,710,405B2 6,759,692  
6,710,463  
6,727,585  
7,005,734B2 7,157,338B2  
7,063,975B2  
6,771,478B2 7,071,537  
IXFA14N60P3 IXFP14N60P3  
IXFH14N60P3  
Fig. 2. Extended Output Characteristics @ TJ = 25ºC  
Fig. 1. Output Characteristics @ TJ = 25ºC  
14  
12  
10  
8
32  
28  
24  
20  
16  
12  
8
V
= 10V  
8V  
V
= 10V  
8V  
GS  
GS  
7V  
7V  
6
6V  
5V  
4
6V  
5V  
2
4
0
0
0
1
2
3
4
5
6
7
8
0
5
10  
15  
20  
25  
30  
VDS - Volts  
VDS - Volts  
Fig. 4. RDS(on) Normalized to ID = 7A Value vs.  
Junction Temperature  
Fig. 3. Output Characteristics @ TJ = 125ºC  
14  
12  
10  
8
3.4  
3.0  
2.6  
2.2  
1.8  
1.4  
1.0  
0.6  
0.2  
V
= 10V  
7V  
GS  
V
= 10V  
GS  
6V  
I
= 14A  
D
I
= 7A  
D
6
4
5V  
4V  
2
0
0
2
4
6
8
10  
12  
14  
16  
18  
-50  
-25  
0
25  
50  
75  
100  
125  
150  
VDS - Volts  
TJ - Degrees Centigrade  
Fig. 6. Maximum Drain Current vs.  
Case Temperature  
Fig. 5. RDS(on) Normalized to ID = 7A Value vs.  
Drain Current  
16  
14  
12  
10  
8
3.4  
V
= 10V  
GS  
3.0  
2.6  
2.2  
1.8  
1.4  
1.0  
0.6  
T = 125ºC  
J
T
J
= 25ºC  
6
4
2
0
0
4
8
12  
16  
20  
24  
28  
32  
-50  
-25  
0
25  
50  
75  
100  
125  
150  
ID - Amperes  
TC - Degrees Centigrade  
© 2013 IXYS CORPORATION, All Rights Reserved  
IXFA14N60P3 IXFP14N60P3  
IXFH14N60P3  
Fig. 7. Input Admittance  
Fig. 8. Transconductance  
20  
18  
16  
14  
12  
10  
8
30  
25  
20  
15  
10  
5
T
= - 40ºC  
J
25ºC  
125ºC  
T
J
= 125ºC  
25ºC  
- 40ºC  
6
4
2
0
0
0
2
4
6
8
10  
12  
14  
16  
18  
20  
22  
3.0  
3.5  
4.0  
4.5  
5.0  
5.5  
6.0  
6.5  
7.0  
VGS - Volts  
ID - Amperes  
Fig. 9. Forward Voltage Drop of Intrinsic Diode  
Fig. 10. Gate Charge  
45  
40  
35  
30  
25  
20  
15  
10  
5
10  
9
8
7
6
5
4
3
2
1
0
V
= 300V  
DS  
I
I
= 7A  
D
G
= 10mA  
T
J
= 125ºC  
T
J
= 25ºC  
0
0.3  
0.4  
0.5  
0.6  
0.7  
0.8  
0.9  
1.0  
1.1  
0
5
10  
15  
20  
25  
VSD - Volts  
QG - NanoCoulombs  
Fig. 12. Forward-Bias Safe Operating Area  
Fig. 11. Capacitance  
100  
10  
1
10,000  
1,000  
100  
10  
= 1 MHz  
f
R
DS(on)  
Limit  
C
iss  
100µs  
C
C
oss  
rss  
T
= 150ºC  
= 25ºC  
J
T
C
1ms  
Single Pulse  
1
0.1  
0
5
10  
15  
20  
25  
30  
35  
40  
10  
100  
1,000  
VDS - Volts  
VDS - Volts  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXFA14N60P3 IXFP14N60P3  
IXFH14N60P3  
Fig. 13. Maximum Transient Thermal Impedance  
1
0.1  
0.01  
0.001  
0.0001  
0.001  
0.01  
0.1  
1
10  
Pulse Width - Seconds  
© 2013 IXYS CORPORATION, All Rights Reserved  
IXYS REF: F_14N60P3(K4)12-01-11  

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